Patent application number | Description | Published |
20080211707 | Slider-Activated Remote Controller for a Vehicle - A slider-activated vehicle remote controller incorporates a sliding mechanism to enable locking and/or unlocking of a vehicle. Either a straight-path slide movement or an axis-based slide movement can be used as the sliding mechanism for the slider-activated vehicle remote controller, wherein a direction of the sliding movement or a particular position of the sliding mechanism of the slider-activated vehicle remote controller can be configured to indicate the vehicle's locked and/or unlocked status. Therefore, by looking at the current shape of the slider-activated vehicle remote controller, a user can readily identify whether the vehicle is locked or unlocked. In one embodiment of the invention, the sliding mechanism acts as a switch to trigger locking and/or unlocking of the vehicle. In another embodiment of the invention, the sliding mechanism activates an underlying switch to trigger locking and/or unlocking of the vehicle. | 09-04-2008 |
20090296039 | Thin Film Transistor Array Panel With Improved Connection to Test Lines - A thin film transistor (TFT) array panel with improved contact between the display signal lines and test lines is presented. The TFT array panel includes: gate lines and data lines intersecting each other, switching elements connected to the gate lines and the data lines, and at least one test line disposed near end portions of the gate lines or the data lines. An insulating layer covers the gate lines, the data lines and the switching elements and has first contact holes exposing the end portions of the gate lines or the data lines and second contact holes exposing the test lines. Auxiliary test lines are formed on the insulating layer and commonly connected to conductive layers, wherein the conductive layers connect at least one test line to the gate lines or the data lines via the first and the second contact holes. | 12-03-2009 |
20100003795 | Method for Fabricating Flash Memory Device Having Vertical Floating Gate - A method for fabricating a flash memory device includes forming a control gate having a hollow donut shape over an insulation layer formed over a substrate. The method also includes forming an inter-poly dielectric of a spacer shape on an inner wall of the control gate, filling a conductive layer for a floating gate between the spacer shaped inter-poly dielectrics, and forming an interlayer insulation layer over a resulting product formed with the conductive layer for a floating gate. The method further includes removing a center portion of the conductive layer for a floating gate to form an opening, forming a tunnel insulation layer on an inner face of the opening, and filling with a semiconductor layer the opening formed with the tunnel insulation layer to form an active region. | 01-07-2010 |
20100195039 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - In a method of manufacturing a display apparatus, an opposite substrate on which a conductive pattern is formed is coupled with a display substrate to face the display substrate, and the opposite substrate is cut to partially expose the display substrate. Since the conductive pattern is cut with the opposite substrate during the cutting of the opposite substrate, an electric resistance of the conductive pattern is changed. The change in electric resistance of the conductive pattern is detected to determine whether the opposite substrate is cut or not. | 08-05-2010 |
20100296035 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE HAVING THE SAME - A display substrate includes a transparent substrate, a pixel layer, an organic insulating layer, a transparent electrode and a reflective electrode. The pixel layer is formed on the transparent substrate, and includes a plurality of pixel parts. Each of the pixel parts includes a transmission region and a reflection region. The organic insulating layer is formed on the pixel layer. The transparent electrode is formed on the organic insulating layer corresponding to each of the pixel parts. The reflective electrode is formed on the transparent electrode corresponding to the reflection region. The reflective electrode includes a silver alloy that includes silver (Ag) and impurities having a low solubility in the silver. | 11-25-2010 |
20110093811 | SYSTEM AND METHOD FOR PERFORMING AUTO SCROLL - Provided is a system and method for performing an auto scroll. The system for performing the auto scroll may include an auto scroll determination unit to determine whether to perform the auto scroll on a page, an auto scroll performing unit to perform the auto scroll on the page so that a main text of the page may be obtained with focus, and a page providing unit to output the auto scrolled page. According to exemplary embodiments of the present invention, even though a user does not manually scroll to data of the page to be viewed, the data of the page may automatically be scrolled so that the data may be obtained with focus. | 04-21-2011 |
20110123729 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate line disposed on a substrate, a data line crossing the gate line, a thin-film transistor electrically connected to the gate line and the data line, a light blocking layer disposed on the substrate and the thin-film transistor, where the light blocking layer blocks light and includes at least one selected from the group consisting of a zinc oxide, a copper oxide and a zinc-copper-oxide composite, and a pixel electrode electrically connected to the thin-film transistor. | 05-26-2011 |
20110227080 | FLAT PANEL DISPLAY - A flat panel display includes; a first substrate, a white reflective layer disposed on the first substrate, a pixel electrode disposed on the white reflective, a second substrate disposed facing the first substrate, a common electrode disposed on the second substrate, and an electrooptic layer disposed between the pixel electrode and the common electrode, wherein the white reflective layer includes at least one of TiO | 09-22-2011 |
20130037896 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element. | 02-14-2013 |
20130157384 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming a first insulation layer over a bottom layer, selectively removing a portion the first insulation layer to form a first trench that exposes the bottom layer, forming spacers on inner sidewalls of the first trench; forming a pillar-shaped second insulation layer in the first trench between the spacers, removing the spacers to form a second trench between the pillar-shaped second insulation layer and the first insulation layer, and burying a conductive layer in the second trench. | 06-20-2013 |
20140231942 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element. | 08-21-2014 |
20150050431 | RUTHENIUM COMPOUND HAVING SUPERIOR STEP COVERAGE AND THIN FILM DEPOSITED USING SAME - The present invention relates to a ruthenium compound including a specific ligand structure of 1-ethyl-1,4-cyclohexadiene, 1,3-butadiene or isoprene and having superior thermal stability, vaporizing property and step coverage, and a thin film deposited using same. | 02-19-2015 |