Patent application number | Description | Published |
20080278425 | Light-Emitting Device and Electronic Equipment Using the Same - A pixel suitable for constant current operation of an active matrix type EL display device. The pixel comprises a first switch of which one terminal is connected to a source signal line whereas another terminal is connected to a current-voltage conversion element, a second switch of which one terminal is connected to the current-voltage conversion element whereas another terminal is connected to a voltage storage means and a voltage-current conversion element, a pixel electrode which is connected to the current-voltage conversion element and the voltage-current conversion element, and a third switch of which one terminal is connected to the pixel electrode whereas another terminal is connected to the power source line. | 11-13-2008 |
20080297319 | Article management system - An article management system which can efficiently search for the whereabouts of an article. The article management system for managing the whereabouts of an article existing in any of a plurality of sections includes radio communication devices provided in the respective sections, and an RFID tag and a portable device that are communicable with the radio communication device by radio. The RFID tag is attached to the article. The article is detected through communication between the RFID tag and one of the radio communication devices provided in the respective sections. Further, in which of the plurality of sections the article exists is specified through communication between the portable device and the radio communication devices provided in the respective sections. | 12-04-2008 |
20090001256 | PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE PROVIDED WITH THE PHOTOELECTRIC CONVERSION DEVICE - It is an object to provide a photoelectric conversion device which can solve the problem of leakage current or noise caused when the photoelectric conversion device is connected to an external circuit by amplifying the current flows through the photoelectric conversion element, and which can widen dynamic range of the output voltage which is obtained in accordance with the current flowing through the photoelectric conversion element. The photoelectric conversion device includes a voltage detection circuit, and a photoelectric conversion circuit including a photoelectric conversion element, a current mirror circuit, and a field effect transistor. The current mirror circuit is a circuit which amplifies and outputs a photocurrent generated at the photoelectric conversion element. The voltage detection circuit is connected to the gate terminal of the field effect transistor so as to detect generated voltage. | 01-01-2009 |
20090009505 | Display device - A display device according to the present invention includes a switching regulator control circuit formed of TFTs. A digital switching regulator control circuit is composed of an AD converter circuit, a CPU, a pulse generation circuit or the like. An analog switching regulator control circuit is composed of an error amplifier circuit, a triangle wave generation circuit, a PWM comparator or the like. By integrally forming the switching regulator control circuit on a display device, the problem of the conventional portable information equipment as to the reduction in size and weight can be solved. | 01-08-2009 |
20090072757 | METHOD OF DRIVING A LIGHT EMITTING DEVICE - The present invention is characterized in that a transistor with its L/W set to 10 or larger is employed, and that |V | 03-19-2009 |
20090085182 | Semiconductor device and method for manufacturing the same - A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 10 | 04-02-2009 |
20090104750 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, DISPLAY PANEL, AND DISPLAY DEVICE - If the size of a single crystal silicon layer attached is not appropriate, even when a large glass substrate is used, the number of panels to be obtained cannot be maximized. Therefore, in the present invention, a substantially quadrangular single crystal semiconductor substrate is formed from a substantially circular single crystal semiconductor wafer, and a damaged layer is formed by irradiation with an ion beam into the single crystal semiconductor substrate. A plurality of the single crystal semiconductor substrates are arranged so as to be separated from each other over one surface of a supporting substrate. By thermal treatment, a crack is generated in the damaged layer and the single crystal semiconductor substrate is separated while a single semiconductor layer is left over the supporting substrate. After that, one or a plurality of display panels is manufactured from the single crystal semiconductor layer bonded to the supporting substrate. | 04-23-2009 |
20090117681 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The object of the present invention is to miniaturize the area occupied by the element and to integrate a plenty of elements in a limited area so that the sensor element can have higher output and smaller size. | 05-07-2009 |
20090122049 | Display Device and Controlling Method Thereof - A conventional setting voltage was a value with an estimated margin of a characteristic change of a light emitting element. Therefore, a voltage between the source and drain of a driver transistor V | 05-14-2009 |
20090127641 | SEMICONDUCTOR DEVICE - The invention provides a semiconductor device that power is stabilized by suppressing power consumption as much as possible. The semiconductor device of the invention includes a logic portion and a memory portion each including a plurality of transistors, a detecting portion for detecting one or both of operation frequencies of the logic portion and the memory portion, a Vth control for supplying a Vth control signal to one or both of the logic portion and the memory portion, and an antenna. Each of the plurality of transistors has a first gate electrode which is input with a logic signal, a second gate electrode which is input with the Vth control signal, and a semiconductor film such that the second gate electrode, the semiconductor film, and the first gate electrode are provided in this order from the bottom. | 05-21-2009 |
20090146149 | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF - In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof. | 06-11-2009 |
20090159890 | Semiconductor Display Device - A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line. | 06-25-2009 |
20090160753 | DISPLAY DEVICE - When semi-amorphous TFTs are used for forming a signal line driver circuit and a pixel, a large amplitude is required for driving the pixel, and a large power supply voltage is thus needed. On the other hand, when a shift register is made up of transistors having a single conductivity, a bootstrap circuit is required, and a voltage over a power supply is applied to a specific element. Therefore, not both the driving amplitude and the reliability can be achieved with a single power supply. According to the invention, a level shifter having a single conductivity is provided to solve such a problem. | 06-25-2009 |
20090174333 | Display Device and Electronic Device - A display device where the influence of variations in current of the light emitting element due to changes in ambient temperature and changes with time can be suppressed. The display device of the invention has a light emitting element, a driving transistor connected in series to the light emitting element, a monitoring light emitting element, a limiter transistor connected in series to the monitoring light emitting element, a constant current source for supplying a constant current to the monitoring light emitting element, and a circuit for outputting a potential equal to an inputted potential. A first electrode of the light emitting element is connected to an output terminal of the circuit through the driving transistor, and a first electrode of the monitoring light emitting element is connected to an input terminal of the circuit through the limiter transistor. The channel length L | 07-09-2009 |
20090194771 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object of the present invention is to provide a semiconductor device which has flexibility and resistance to a physical change such as bending and a method for manufacturing the semiconductor device. A semiconductor device of the present invention includes a plurality of transistors provided over a flexible substrate, each of which has a semiconductor film, a gate electrode provided over the semiconductor film with a gate insulating film therebetween, and an interlayer insulating film provided to cover the gate electrode, and a bending portion provided between the plurality of transistors, in which the bending portion is provided by filling an opening formed in the interlayer insulating film with a material having a lower elastic modulus, a material having a lower glass transition point, or a material having a higher plasticity than that of the interlayer insulating film. | 08-06-2009 |
20090195359 | SEMICONDUCTOR DEVICE - An object is to increase the reliability of a semiconductor device which is capable of wireless communication. The semiconductor device includes a plurality of functional circuits as redundant circuits, and each of the plurality of functional circuits includes an antenna and a semiconductor integrated circuit. The plurality of functional circuits is covered with one sealing layer in which a fibrous body is impregnated with resin. Further, the semiconductor integrated circuit is provided with a transmission/reception circuit electrically connected to the antenna, a power supply circuit electrically connected to the transmission/reception circuit, and a logic circuit electrically connected to the transmission/reception circuit and the power supply circuit. | 08-06-2009 |
20090195387 | SEMICONDUCTOR DEVICE - A semiconductor device with improved reliability, in which increase in power consumption can be reduced. The semiconductor device includes an antenna for transmitting and receiving a wireless signal to/from a communication device and at least first and second functional circuits electrically connected to the antenna. The first functional circuit includes a power supply control circuit for controlling power supply voltage output from a power supply circuit in the second functional circuit. A power supply control circuit in the second functional circuit includes a transistor of which first terminal is electrically connected to an output terminal of the power supply circuit and second terminal is electrically connected to a ground line. A gate terminal of the transistor is electrically connected to the power supply control circuit included in one functional circuit. | 08-06-2009 |
20090230292 | PROTECTION CIRCUIT AND PHOTOELECTRIC CONVERSION DEVICE - A protection circuit and a photoelectric conversion device are provided, each of which includes a first wiring, a second wiring, a first switch, a second switch, a capacitor, and a comparing circuit configured to generate a signal corresponding to a potential of the first wiring and a potential of the second wiring, and supply the signal to the first switch and the second switch. The first wiring is electrically connected to a first terminal of the first switch, and the second wiring is electrically connected to a first terminal of the second switch. A second terminal of the first switch is electrically connected to a first electrode of the capacitor, and a second terminal of the second switch is electrically connected to a second electrode of the capacitor. | 09-17-2009 |
20090231021 | Semiconductor Device - An element is protected without hampering an actual operation in the case where overvoltage that might damage the element is applied. A semiconductor device includes a first potential supply terminal | 09-17-2009 |
20090236428 | Semiconductor Device - The invention provides a circuit which provides a stabilized boosting in the case where a semiconductor device typified by a non-contact ID chip includes a circuit which requires a higher voltage than a logic circuit does. By inputting an alternating signal inputted from an antenna to a charge pump circuit as it is or through a logic circuit, a charge pump can operate with a stabilized frequency that a clock frequency is not affected by a variation of elements and the ambient temperature, thus a stabilized boosting can be provided. | 09-24-2009 |
20090237390 | DISPLAY DEVICE - A light emitting element has a property in which a current value is varied due to a change in temperature. A display device has a temperature compensation function in order to suppress the variation in current value dues to the change in temperature. The temperature compensation function, which is essential for the present invention has a sensor, a storage means, and a correction means. The sensor has a function of detecting an environmental temperature. The detected temperature is compared with data of voltage-current characteristic versus temperature in the light emitting element which is stored in advance in the storage means. In the correction means, a signal inputted to a pixel or a power source potential supplied to a pixel portion is corrected using an output of the sensor and the data stored in the storage means. | 09-24-2009 |
20090261444 | SEMICONDUCTOR DEVICE - A wiring electrically connected to a terminal to which a high power supply potential is applied and a wiring electrically connected to a terminal to which a low power supply potential is applied are formed adjacent to each other and are formed so as to surround the integrated circuit. Thus, wiring resistance can be added between the terminals and the integrated circuit and capacitance can be added between the two wirings. Even if overvoltage is applied to the terminals due to ESD or the like, the energy of the overvoltage is consumed by the wiring resistance and the added capacitor, so that damage of the integrated circuit can be suppressed. | 10-22-2009 |
20090267073 | Semiconductor Device and Method of Manufacturing the Same - The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode ( | 10-29-2009 |
20090284310 | SEMICONDUCTOR DEVICE - A semiconductor device which may be used as an ID chip and data may be rewritten only one time. In addition, a semiconductor device may be used as an ID chip and data may be written except when manufacturing the chip. The invention has a modulating circuit, a demodulating circuit, a logic circuit, a memory circuit, and an antenna circuit over an insulating substrate. The modulating circuit and the demodulating circuit are electrically connected to an antenna circuit, the demodulating circuit is connected to the logic circuit, the memory circuit stores an output signal of the logic circuit, and the memory circuit is a fuse memory circuit using a fuse element. | 11-19-2009 |
20090289173 | PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE HAVING THE SAME - The photoelectric conversion device includes a photoelectric conversion circuit for outputting photocurrent generated in a photoelectric conversion element as output voltage subjected to logarithmic compression by a first diode element, a reference voltage generation circuit for outputting reference voltage subjected to logarithmic compression by a second diode element in accordance with the amount of current flowing to a resistors an arithmetic circuit for outputting an output signal obtained by amplifying a difference between the output voltage output from the photoelectric conversion circuit and the reference voltage output from the reference voltage generation circuit, and an output circuit for outputting current corresponding to the logarithmically-compressed output voltage output from the photoelectric conversion circuit by the output signal. | 11-26-2009 |
20090289174 | PHOTOELECTRIC CONVERSION DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC DEVICE PROVIDED WITH THE SAME - Objects are to accumulate electric charge in a capacitor so that light intensity can be detected even when the amount of incident light is small, and to operate a photoelectric conversion device without increasing the number of elements such as a constant current source or a switch. The photoelectric conversion device includes a photoelectric conversion circuit, a capacitor, and a comparator for comparing a potential of one electrode of the capacitor with a second potential. The photoelectric conversion circuit includes a photoelectric conversion element and an amplifier circuit for amplifying an output current from the photoelectric conversion element In the capacitor, a first potential is supplied through a first switch, and charging or discharging is performed through a second switch in accordance with the current amplified by the amplifier circuit. | 11-26-2009 |
20090324244 | PHOTOMETRIC DEVICE - A photometric device with a wide dynamic range. The photometric device includes a constant current generation circuit, a fixed clock signal generation circuit which generates a fixed clock signal having a fixed frequency, a photoelectric conversion element, a variable clock signal generation circuit and a digital signal generation circuit. The fixed clock signal generation circuit generates a fixed clock signal that oscillates at a fixed frequency, from constant current The variable clock signal generation circuit generates a variable clock signal that oscillates at a frequency proportional to the amount of photocurrent, from photocurrent generated in the photoelectric conversion element. The digital signal generation circuit sets a measurement period using the fixed clock signal, counts the number of pulses of the variable clock signal that oscillates for the measurement period, and outputs a digital signal including the count value as data. | 12-31-2009 |
20100020060 | DISPLAY DEVICE AND CONTROLLING METHOD THEREOF - A conventional setting voltage was a value with an estimated margin of a characteristic change of a light emitting element. Therefore, a voltage between the source and drain of a driver transistor V | 01-28-2010 |
20100033450 | Display Device and Electronic Device - To increase a reading speed in a display device having a touch-panel function. The display device includes a display panel | 02-11-2010 |
20100051787 | PHOTODETECTOR - A photodetector includes a photoelectric conversion circuit that generates a first voltage by converting a first current generated in accordance with the illuminance of incident light into log-compressed voltage; a temperature compensation circuit that generates a second voltage by performing temperature compensation for the first voltage and generate a second current by converting the second voltage into current; and a digital signal generation circuit that generates a clock signal having an oscillation frequency depending on the second current, counts pulses of the clock signal for a certain period, and generates a digital signal using the count value for the certain period as data. | 03-04-2010 |
20100061136 | Semiconductor Memory Device and Semiconductor Device - An anti-fuse memory device includes a plurality of word lines, a plurality of bit lines, and a memory cell provided with respect to an intersecting portion of any of the plurality of word lines and any of the plurality of bit lines. Memory cell includes a PIN diode and an anti-fuse. An anode of the PIN diode is electrically connected to any of the bit lines. A cathode of the PIN diode is electrically connected to a first terminal of the anti-fuse. A second terminal of the anti-fuse is electrically connected to any of the word lines. The anti-fuse includes a silicon layer and an insulating layer which are interposed between electrodes. | 03-11-2010 |
20100066653 | DISPLAY DEVICE AND ELECTRONIC DEVICE - It is an object of the present invention to provide a display device in which images can be seen under a dark place to intense external light. In the display device, display is performed by changing the gray scale number depending on external light intensity, and display modes can be switched depending on contents displayed on the screen. An analog mode and a digital mode are switched depending on external light intensity. In an analog digital switching circuit, when a video signal is an analog value, a signal is outputted to a pixel array without any change and, when the video signal is a digital value, the signal is outputted to a circuit that performs a digital operation such as a latch circuit. Consequently, display gray scales of a pixel are changed appropriately. Accordingly, a clear image can be displayed. For example, it is possible to ensure visibility in a wide range of a dark place or under indoor florescent light to outdoor sun light. | 03-18-2010 |
20100073272 | Display Device - In a display device having driving circuits formed on the same substrate where pixels are formed, the lateral frame area of the display device is reduced. A gate signal line driving circuit is placed in parallel with a source signal line driving circuit, so that no driving circuits are provided in at least two opposing directions out of four directions with respect to a pixel region. With the above-described structure, the area the gate signal line driving circuit occupies in prior art is removed to reduce the width (side to side) of the display device. Therefore a display device that has a small frame area in the lateral direction can be provided. | 03-25-2010 |
20100073406 | Display Device, and Driving Method and Electronic Apparatus of the Display Device - The present invention provides a driving method of a display device for expressing gray scales with n bits (n is an integer) by dividing one frame into a plurality of subframes. By this driving method, pseudo contours which occur in displaying images by a time gray scale method can be reduced. | 03-25-2010 |
20100090016 | SEMICONDUCTOR DEVICE - A semiconductor device used as an ID chip is provided, of which operation is terminated when its role is finished or expires. According to the invention, an antenna circuit, a voltage detecting circuit, a current amplifier circuit, a signal processing circuit, and a fuse are provided over an insulating substrate. When large power is applied to the antenna circuit, a voltage is detected by voltage detecting circuit and a corresponding current is amplified by the current amplifier circuit, thereby the fuse is melted down. Also, when an anti-fuse is used, the anti-fuse can short an insulating film by applying an excessive voltage. In this manner, the semiconductor device has a function for making it invalid by stopping operation of the signal processing circuit when the role of the device is finished or expires. | 04-15-2010 |
20100094555 | LIGHT EMITTING DEVICE, DRIVING SUPPORT SYSTEM, AND HELMET - It is an object to provide a driving support system and a display device suitable for the driving support system. According to the driving support system, change in driver's mental and physical conditions can be caught instantaneously and a warning light emission display is given within the forward sight of the driver in order to call the driver's attention. A light emitting device of the driving support system can display a far side of the display. A display may be switched between a transmission mode and a non-transmission mode by adjusting a movable polarizer. | 04-15-2010 |
20100109708 | LOGIC CIRCUIT - An object is to apply a transistor using an oxide semiconductor to a logic circuit including an enhancement transistor. The logic circuit includes a depletion transistor | 05-06-2010 |
20100110623 | DRIVER CIRCUIT AND DISPLAY DEVICE - The driver circuit includes an inverter circuit having a first thin film transistor including a first oxide semiconductor film and a second transistor including a second oxide semiconductor film. The first thin film transistor and the second thin film transistor are enhancement transistors, in which a silicon oxide film including an OH group is provided on and in contact with the first oxide semiconductor film and the second oxide semiconductor film, and a silicon nitride film is provided on and in contact with the silicon oxide film. | 05-06-2010 |
20100117991 | IMAGE INPUT-OUTPUT DEVICE - An image input-output device includes a pixel which displays an image and reads an image. The pixel includes a photodetector element, a color layer, and a display element. The color layer is provided over the photodetector element and the display element is provided over the color layer, so that the distance between the photodetector element and the color layer is reduced. Accordingly, light is likely to enter the predetermined photodetector element through the predetermined color layer, and thus, even a color object can be read correctly. | 05-13-2010 |
20100148177 | DISPLAY DEVICE - A display device including an inverter circuit and a switch is provided. The inverter circuit includes a first thin film transistor and a second thin film transistor which have the same conductivity type. The first thin film transistor and the second thin film transistor each include: a gate insulating layer in contact with a gate electrode; a microcrystalline semiconductor layer in contact with the gate insulating layer; a mixed layer in contact with the microcrystalline semiconductor layer; a layer which includes an amorphous semiconductor and is in contact with the mixed layer; and a wiring. A conical or pyramidal microcrystalline semiconductor region and an amorphous semiconductor region filling a space except the conical or pyramidal microcrystalline semiconductor region are included in the mixed layer. | 06-17-2010 |
20100163868 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit. | 07-01-2010 |
20100163874 | DRIVER CIRCUIT AND SEMICONDUCTOR DEVICE - The silicon nitride layer | 07-01-2010 |
20100193798 | SOURCE FOLLOWER CIRCUIT OR BOOTSTRAP CIRCUIT, DRIVER CIRCUIT COMPRISING SUCH CIRCUIT, AND DISPLAY DEVICE COMPRISING SUCH DRIVER CIRCUIT - In the case of using an analog buffer circuit, an input voltage is required to be added a voltage equal to a voltage between the gate and source of a polycrystalline silicon TFT; therefore, a power supply voltage is increased, thus a power consumption is increased with heat. In view of the foregoing problem, the invention provides a depletion mode polycrystalline silicon TFT as a polycrystalline silicon TFT used in an analog buffer circuit such as a source follower circuit. The depletion mode polycrystalline silicon TFT has a threshold voltage on its negative voltage side; therefore, an input voltage does not have to be increased as described above. As a result, a power supply voltage requires no increase, thus a low power consumption of a liquid crystal display device in particular can be realized. | 08-05-2010 |
20100237805 | Lighting Device - To provide a lighting device in which the luminance of an EL element is maintained even when the EL element deteriorates so that degradation of the lighting device is reduced, the lighting device includes a surface light source portion including an organic EL element, and a control circuit portion provided in a base portion. The control circuit portion counts a lighting time of the organic EL element and controls the luminance of the organic EL element in accordance with the lighting time. Accordingly, the lighting device in which the luminance of an EL element is maintained regardless of degradation of the EL element so that degradation of the lighting device is reduced can be provided. | 09-23-2010 |
20100245190 | HEATLTH DATA COLLECTING SYSTEM AND SEMICONDUCTOR DEVICE - Conventionally, people have to go to the place where a measurement instrument for health data is, to obtain health data and the like. Further, even when using a portable measurement instrument, people have to manage data by themselves, thus health data cannot be managed rapidly. According to the invention, a modulating circuit, a demodulating circuit, a logic circuit, a sensor circuit, and an antenna circuit are provided over an insulating substrate, thereby data sensed by the sensor circuit is transmitted wirelessly. According to the invention, health data on the living body (for example a human body) is sensed and can be rapidly detected. | 09-30-2010 |
20100253478 | DATA PROCESSING DEVICE, IC CARD AND COMMUNICATION SYSTEM - An object is to provide a data processing device which achieves multiple functions or easy additional providing of a function while suppressing adverse influence on a communication distance or to improve resistance to electrostatic discharge in the data processing device. The data processing device includes an antenna which transmits and receives a first signal to/from a first terminal device through wireless communication, an integrated circuit which executes a process in accordance with the first signal, and a terminal portion which transmits and receives a second signal to/from a second terminal device and has an exposed conductive portion on its surface. A protection circuit is provided between at least one terminal of terminals of the terminal portion and a power supply terminal of a high potential and between the one terminal and a power supply terminal of a low potential. | 10-07-2010 |
20100277443 | Electronic Book - An e-book reader in which destruction of a driver circuit at the time when a flexible panel is handled is inhibited. In addition, an e-book reader having a simplified structure. A plurality of flexible display panels each including a display portion in which display control is performed by a scan line driver circuit and a signal line driver circuit, and a binding portion fastening the plurality of display panels together are included. The signal line driver circuit is provided inside the binding portion, and the scan line driver circuit is provided at the edge of the display panel in a direction perpendicular to the binding portion. | 11-04-2010 |
20100289331 | ELECTRIC POWER SUPPLY SYSTEM AND ELECTRIC POWER SUPPLY SYSTEM FOR MOTOR VEHICLE - To provide for a movable electronic device a power receiving device that when charging a battery, simplifies charging of the battery from a power feeder, which is a power supply means, and does not have faults due to an external factor relating to a relay terminal, or damage of the relay terminal, that are caused by directly connecting the battery and the power feeder, and further, to provide an electronic device including the power receiving device. An antenna circuit and a booster antenna for supplying electric power are provided in a movable electronic device. The antenna circuit receives a radio signal such as an electromagnetic wave via the booster antenna, and electric power that is obtained through the receiving of the radio signal is supplied to the battery through a signal processing circuit. | 11-18-2010 |
20100295683 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device typified by a wireless tag, which has improved mechanical strength, can be formed by a more simple process at a low cost and prevent radio waves from being shielded, and a manufacturing method of the semiconductor device. According to the invention, a wireless tag includes a thin film integrated circuit formed of an isolated TFT having a thin film semiconductor film. The wireless tag may be attached directly to an object, or attached to a flexible support such as plastic and paper before being attached to an object. The wireless tag of the invention may include an antenna as well as the thin film integrated circuit. The antenna allows to communicate signals between a reader/writer and the thin film integrated circuit, and to supply a power source voltage from the reader/writer to the thin film integrated circuit. | 11-25-2010 |
20100328288 | SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF DRIVING THE SAME - A transistor causes fluctuation in the threshold and mobility due to the factor such as fluctuation of the gate length, the gate width, and the gate insulating film thickness generated by the difference of the manufacturing steps and the substrate to be used. As a result, there is caused fluctuation in the current value supplied to the pixel due to the influence of the characteristic fluctuation of the transistor, resulting in generating streaks in the display image. A light emitting device is provided which reduces influence of characteristics of transistors in a current source circuit constituting a signal line driving circuit until the transistor characteristics do not affect the device and which can display a clear image with no irregularities. A signal line driving circuit of the present invention can prevent streaks in a displayed image and uneven luminance. Also, the present invention makes it possible to form elements of a pixel portion and driving circuit portion from polysilicon on the same substrate integrally. In this way, a display device with reduced size and current consumption is provided as well as electronic equipment using the display device. | 12-30-2010 |
20110006852 | PLL CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE SAME - A PLL circuit includes a phase detector, a loop filter (LF), a voltage-controlled oscillator (VCO), and a frequency divider. The phase detector compares a phase of a signal Fs which is input from outside with a phase of a signal Fo/N which is input from the frequency divider. The loop filter generates a signal Vin by removing alternating current components from a signal input from the phase detector. The voltage-controlled oscillator outputs a signal Fo based on the signal Vin input from the loop filter. The frequency divider converts the signal Fo output from the voltage-controlled oscillator into Fo/N (frequency division by N), and outputs it to the phase detector. | 01-13-2011 |
20110031495 | Liquid Crystal Display Device, Electronic Device Having the Same, and Manufacturing Method of the Same - A liquid crystal display device with improved productivity and a manufacturing method of the same. A liquid crystal display device according to the invention comprises in a region in which a scan line and a data line intersect with each other a first substrate comprising a first thin film transistor using either an amorphous semiconductor or an organic semiconductor for a channel portion, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, and a third substrate comprising a second thin film transistor using a crystalline semiconductor for a channel portion. In the liquid crystal display device of the invention, a crystal grain boundary in the crystalline semiconductor extends along the flow of electrons or holes in the second thin film transistor, the first substrate is attached to the second substrate so that the first substrate is exposed, a first region for forming the second thin film transistor and a second region for forming an input terminal and an output terminal are formed on the third substrate, and the short side length of the third substrate is 1 to 6 mm and the short side length of the first region is 0.5 to 1 mm. | 02-10-2011 |
20110057865 | DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - The display device includes a first pixel, a second pixel, and a third pixel each including a first transistor, a second transistor, and a light-emitting element. In each of the first to third pixels, a first terminal of the first transistor is electrically connected to a signal line, a second terminal of the first transistor is electrically connected to a gate of the second transistor, a first terminal of the second transistor is electrically connected to a power supply line and a second terminal of the first transistor is electrically connected to the light-emitting element. A gate of the first transistor in the first pixel is electrically connected to a first scan line. A gate of the first transistor in the second pixel is electrically connected to a second scan line. A gate of the first transistor in the third pixel is electrically connected to a third scan line. | 03-10-2011 |
20110062432 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to realize low power consumption while manufacturing a semiconductor device including a thin film transistor whose parasitic capacitance is reduced. Part of an insulating layer covering the periphery of a gate electrode layer is formed to be thick. Specifically, a stack including a spacer insulating layer and a gate insulating layer is formed. The thick part of the insulating layer covering the periphery of the gate electrode layer reduces parasitic capacitance formed between the gate electrode layer of the thin film transistor and another electrode layer (another wiring layer) overlapping with the gate electrode layer. | 03-17-2011 |
20110063014 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE - The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor. | 03-17-2011 |
20110064186 | DRIVER CIRCUIT, DISPLAY DEVICE INCLUDING THE DRIVER CIRCUIT, AND ELECTRONIC DEVICE INCLUDING THE DISPLAY DEVICE - A driver circuit where malfunctions in the circuit can be suppressed even when a thin film transistor is changed into an enhancement transistor or a depletion transistor is provided. In a pulse output circuit, a circuit for raising potentials of source terminals of first and second transistors from low power supply potentials is provided between the source terminals of the first and second transistors and a wiring for supplying a low power supply potential. Further, a switch for setting the potentials of the source terminals of the first and second transistors to low power supply potentials is provided. The switch is controlled by a judgment circuit for judging whether the first and second transistors are enhancement transistors or depletion transistors. | 03-17-2011 |
20110069047 | DISPLAY DEVICE - A display device includes a driver circuit including a logic circuit including a first transistor which is a depletion type transistor and a second transistor which is an enhancement type transistor; a signal line which is electrically connected to the driver circuit; a pixel portion including a pixel whose display state is controlled by input of a signal including image data from the driver circuit through the signal line; a reference voltage line to which reference voltage is applied; and a third transistor which is a depletion type transistor and controls electrical connection between the signal line and the reference voltage line. The first to the third transistors each include an oxide semiconductor layer including a channel formation region. | 03-24-2011 |
20110069805 | DRIVER CIRCUIT, DISPLAY DEVICE INCLUDING THE DRIVER CIRCUIT, AND ELECTRONIC APPLIANCE INCLUDING THE DISPLAY DEVICE - An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a first transistor and a second transistor, and a switch including a third transistor. The first to third transistors each include a semiconductor layer of an oxide semiconductor and are depletion-mode transistors. An amplitude voltage of clock signals for driving the third transistor is higher than a power supply voltage for driving the inverter circuit. | 03-24-2011 |
20110084267 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased. | 04-14-2011 |
20110084268 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed. | 04-14-2011 |
20110084337 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - As for a semiconductor device which is typified by a display device, it is an object to provide a highly reliable semiconductor device to which a large-sized or high-definition screen is applicable and which has high display quality and operates stably. By using a conductive layer including Cu as a long lead wiring, an increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased. | 04-14-2011 |
20110085635 | SHIFT REGISTER AND DISPLAY DEVICE AND DRIVING METHOD THEREOF - The power consumption of a shift register or a display device including the shift register is reduced. A clock signal is supplied to a shift register by a plurality of wirings, not by one wiring. Any one of the plurality of wirings supplies a clock signal in only part of the operation period of the shift register, not during the whole operation period of the shift register. Therefore, the capacity load caused with the supply of clock signals can be reduced, leading to reduction in power consumption of the shift register. | 04-14-2011 |
20110089414 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized. | 04-21-2011 |
20110089417 | SEMICONDUCTOR DEVICE - An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation region on a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer, and a first source electrode and a first drain electrode which are electrically connected to the impurity region; and a second transistor which includes a second gate electrode over the substrate containing a semiconductor material, a second gate insulating layer over the second gate electrode, an oxide semiconductor layer over the second gate insulating layer, and a second source electrode and a second drain electrode which are electrically connected to the oxide semiconductor layer. | 04-21-2011 |
20110089975 | LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE - A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×10 | 04-21-2011 |
20110090006 | ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE - An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×10 | 04-21-2011 |
20110090183 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE LIQUID CRYSTAL DISPLAY DEVICE - In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×10 | 04-21-2011 |
20110090184 | LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE - To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10 | 04-21-2011 |
20110090204 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC APPARATUS HAVING THE SAME - A liquid crystal display device includes: a driver circuit portion; a pixel portion; a signal generation circuit for generating a control signal for driving the driver circuit portion and an image signal which is supplied to the pixel portion; a memory circuit; a comparison circuit for detecting a difference of image signals for a series of frame periods among image signals stored for respective frame periods in the memory circuit; a selection circuit which selects and outputs the image signals for the series of frame periods when the difference is detected in the comparison circuit; and a display control circuit which supplies the control signal and the image signals output from the selection circuit, to the driver circuit portion when the difference is detected in the comparison circuit, and stops supplying the control signal to the driver circuit portion when the difference is not detected in the comparison circuit. | 04-21-2011 |
20110090207 | DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE - Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time. | 04-21-2011 |
20110101331 | SEMICONDUCTOR DEVICE - An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized. | 05-05-2011 |
20110101332 | SEMICONDUCTOR DEVICE - The semiconductor device includes: a transistor having an oxide semiconductor layer; and a logic circuit formed using a semiconductor material other than an oxide semiconductor. One of a source electrode and a drain electrode of the transistor is electrically connected to at least one input of the logic circuit, and at least one input signal is applied to the logic circuit through the transistor. The off-current of the transistor is preferably 1×10 | 05-05-2011 |
20110101334 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor having a novel structure. In the semiconductor device, a plurality of memory elements are connected in series and each of the plurality of memory elements includes first to third transistors thus forming a memory circuit. A source or a drain of a first transistor which includes an oxide semiconductor layer is in electrical contact with a gate of one of a second and a third transistor. The extremely low off current of a first transistor containing the oxide semiconductor layer allows storing, for long periods of time, electrical charges in the gate electrode of one of the second and the third transistor, whereby a substantially permanent memory effect can be obtained. The second and the third transistors which do not contain an oxide semiconductor layer allow high-speed operations when using the memory circuit. | 05-05-2011 |
20110101942 | VOLTAGE REGULATOR CIRCUIT - A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode. | 05-05-2011 |
20110102696 | LIQUID CRYSTAL DISPLAY DEVICE, DRIVING METHOD OF THE SAME, AND ELECTRONIC APPLIANCE INCLUDING THE SAME - An object is to provide a liquid crystal display device in which low power consumption can be achieved. A first substrate includes a terminal portion, a switching transistor, and a pixel circuit including a pixel electrode is provided. A second substrate includes a counter electrode. A liquid crystal element is interposed between the pixel electrode and the counter electrode. A potential to be input to the counter electrode is supplied from a terminal portion through the switching transistor. A semiconductor layer included in the switching transistor is an oxide semiconductor layer. | 05-05-2011 |
20110102697 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - When a pixel portion and a driver circuit are formed over one substrate and a counter electrode is formed over an entire surface of a counter substrate, the driver circuit may be adversely affected by an optimized voltage of the counter electrode. A semiconductor device according to the present invention has a structure in which: a liquid crystal layer is provided between a pair of substrates; one of the substrates is provided with a pixel electrode and a driver circuit; the other of the substrates is a counter substrate which is provided with two counter electrode layers in different potentials; and one of the counter electrode layers overlaps with the pixel electrode with the liquid crystal layer therebetween and the other of the counter electrode layers overlaps with the driver circuit with the liquid crystal layer therebetween. An oxide semiconductor layer is used for the driver circuit. | 05-05-2011 |
20110104859 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device is provided, which includes a process in which a transistor is formed over a first substrate; a process in which a first insulating layer is formed over the transistor; a process in which a first conductive layer connected to a source or a drain of the transistor is formed; a process in which a second substrate provided with a second insulating layer is arranged so that the first insulating layer is attached to the second insulating layer; a process in which the second insulating layer is separated from the second substrate; and a process in which a third substrate provided with a second conductive layer which functions as an antenna is arranged so that the first conductive layer is electrically connected to the second conductive layer. | 05-05-2011 |
20110108706 | SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF - A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. A reset transistor is omitted by initializing the signal charge storage portion to a cathode potential of a photoelectric conversion element portion in the solid-state image sensor. When a thin film transistor which includes an oxide semiconductor layer and has an off-state current of 1×10 | 05-12-2011 |
20110108836 | SEMICONDUCTOR DEVICE - A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10 | 05-12-2011 |
20110108837 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured. | 05-12-2011 |
20110108842 | DISPLAY DEVICE AND ELECTRONIC APPARATUS - A display device in which variations in luminance due to variations in characteristics of transistors are reduced, and image quality degradation due to variations in resistance values is prevented. The invention comprises a transistor whose channel portion is formed of an amorphous semiconductor or an organic semiconductor, a connecting wiring connected to a source electrode or a drain electrode of the transistor, alight emitting element having a laminated structure which includes a pixel electrode, an electro luminescent layer, and a counter electrode, an insulating layer surrounding an end portion of the pixel electrode, and an auxiliary wiring formed in the same layer as a gate electrode of the transistor, a connecting wiring, or the pixel electrode. Further, the connecting wiring is connected to the pixel electrode, and the auxiliary wiring is connected to the counter electrode via an opening portion provided in the insulating layer. | 05-12-2011 |
20110109351 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined. | 05-12-2011 |
20110110145 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device having a novel structure. A first wiring; a second wiring; a third wiring, a fourth wiring; a first transistor including a first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second gate electrode, a second source electrode, and a second drain electrode are included. The first transistor is provided over a substrate including a semiconductor material and a second transistor includes an oxide semiconductor layer. | 05-12-2011 |
20110114941 | DEVICE INCLUDING NONVOLATILE MEMORY ELEMENT - A device including a novel nonvolatile memory element is provided. A device including a nonvolatile memory element in which an oxide semiconductor is used as a semiconductor material for a channel formation region. The nonvolatile memory element includes a control gate, a charge accumulation layer which overlaps with the control gate with a first insulating film provided therebetween, and an oxide semiconductor layer formed using an oxide semiconductor material, which overlaps with the charge accumulation layer with a second insulating film provided therebetween. | 05-19-2011 |
20110114943 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a semiconductor device with a novel structure and favorable characteristics. A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon. | 05-19-2011 |
20110114945 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a semiconductor device with a novel structure. A semiconductor device includes a first transistor, which includes a channel formation region provided in a substrate including a semiconductor material, impurity regions, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode, and a second transistor, which includes an oxide semiconductor layer over the substrate including the semiconductor material, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode. The second source electrode and the second drain electrode include an oxide region formed by oxidizing a side surface thereof, and at least one of the first gate electrode, the first source electrode, and the first drain electrode is electrically connected to at least one of the second gate electrode, the second source electrode, and the second drain electrode. | 05-19-2011 |
20110115545 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device that can realize a function of a thyristor without complication of the process. A semiconductor device including a memory circuit that stores a predetermined potential by reset operation and initialization operation is provided with a circuit that rewrite data in the memory circuit in accordance with supply of a trigger signal. The semiconductor device has a structure in which a current flowing through the semiconductor device is supplied to a load by rewriting data in the memory circuit, and thus can function as a thyristor. | 05-19-2011 |
20110116310 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A semiconductor device includes: a source line; a bit line; a word line; a memory cell connected to the bit line and the word line; a driver circuit which drives a plurality of second signal lines and a plurality of word lines so as to select the memory cell specified by an address signal; a potential generating circuit which generates a writing potential and a plurality of reading potentials to supply to a writing circuit and a reading circuit; and a control circuit which selects one of a plurality of voltages for correction on a basis of results of the reading circuit comparing a potential of the bit line with the plurality of reading potentials. | 05-19-2011 |
20110121285 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring, a second wiring, a third wiring, a fourth wiring, a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, and a second transistor including a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided over a substrate including a semiconductor material, and the second transistor includes an oxide semiconductor layer. | 05-26-2011 |
20110121286 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes memory cells connected to each other in series and a capacitor. One of the memory cells includes a first transistor connected to a bit line and a source line, a second transistor connected to a signal line and a word line, and a capacitor connected to the word line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor, one of a source electrode and a drain electrode of the second transistor, and one electrode of the capacitor are connected to one another. | 05-26-2011 |
20110121878 | NONVOLATILE LATCH CIRCUIT AND LOGIC CIRCUIT, AND SEMICONDUCTOR DEVICE USING THE SAME - To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion for holding data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, an inverter electrically connected to a source electrode or a drain electrode of the transistor is included. With the transistor, data held in the latch portion can be written into a gate capacitor of the inverter or a capacitor which is separately provided. | 05-26-2011 |
20110121887 | SEMICONDUCTOR DEVICE - An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5×10 | 05-26-2011 |
20110122670 | SEMICONDUCTOR DEVICE - An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an oxide semiconductor in their channel formation region and transistors including non-oxide semiconductor in their channel formation region. An application of the present invention is to realize substantially non-volatile semiconductor memories which do not require specific erasing operation and do not suffer from damages due to repeated writing operation. Furthermore, the semiconductor device is well adapted to store multivalued data. Manufacturing methods, application circuits and driving/reading methods are explained in details in the description. | 05-26-2011 |
20110128461 | LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR DRIVING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME - The liquid crystal display device includes a pixel portion including a plurality of pixels to which image signals are supplied; a driver circuit including a signal line driver circuit which selectively controls a signal line and a gate line driver circuit which selectively controls a gate line; a memory circuit which stores the image signals; a comparison circuit which compares the image signals stored in the memory circuit in the pixels and detects a difference; and a display control circuit which controls the driver circuit and reads the image signal in accordance with the difference. The display control circuit supplies the image signal only to the pixel where the difference is detected. The pixel includes a thin film transistor including a semiconductor layer including an oxide semiconductor. | 06-02-2011 |
20110128777 | SEMICONDUCTOR DEVICE - The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is formed on or in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer. | 06-02-2011 |
20110134683 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device functioning as a multivalued memory device including: memory cells connected in series; a driver circuit selecting a memory cell and driving a second signal line and a word line; a driver circuit selecting any of writing potentials and outputting it to a first signal line; a reading circuit comparing a potential of a bit line and a reference potential; and a potential generating circuit generating the writing potential and the reference potential. One of the memory cells includes: a first transistor connected to the bit line and a source line; a second transistor connected to the first and second signal line; and a third transistor connected to the word line, bit line, and source line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor is connected to one of source and drain electrodes of the second transistor. | 06-09-2011 |
20110147737 | SEMICONDUCTOR DEVICE - A first transistor including a channel formation region, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode; a second transistor including an oxide semiconductor layer, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode; and a capacitor including one of the second source electrode and the second drain electrode, the second gate insulating layer, and an electrode provided to overlap with one of the second source electrode and the second drain electrode over the second gate insulating layer are provided. The first gate electrode and one of the second source electrode and the second drain electrode are electrically connected to each other. | 06-23-2011 |
20110148463 | NON-VOLATILE LATCH CIRCUIT AND LOGIC CIRCUIT, AND SEMICONDUCTOR DEVICE USING THE SAME - A novel non-volatile latch circuit and a semiconductor device using the non-volatile latch circuit are provided. The latch circuit has a loop structure in which an output of a first element is electrically connected to an input of a second element and an output of the second element is electrically connected to an input of the first element through a second transistor. A transistor using an oxide semiconductor as a semiconductor material of a channel formation region is used as a switching element, and a capacitor is provided to be electrically connected to a source electrode or a drain electrode of the transistor, whereby data of the latch circuit can be retained, and a non-volatile latch circuit can thus be formed. | 06-23-2011 |
20110148826 | METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE - The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion. | 06-23-2011 |
20110156024 | MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - An object is to provide a memory device which does not need a complex manufacturing process and whose power consumption can be suppressed, and a semiconductor device including the memory device. A solution is to provide a capacitor which holds data and a switching element which controls storing and releasing charge in the capacitor in a memory element. In the memory element, a phase-inversion element such as an inverter or a clocked inverter includes the phase of an input signal is inverted and the signal is output. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. In the case where application of a power supply voltage to the phase-inversion element is stopped, the data is stored in the capacitor, so that the data is held in the capacitor even when the application of the power supply voltage to the phase-inversion element is stopped. | 06-30-2011 |
20110156027 | SEMICONDUCTOR DEVICE - An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor. | 06-30-2011 |
20110156028 | SEMICONDUCTOR DEVICE - The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material. | 06-30-2011 |
20110156117 | SEMICONDUCTOR DEVICE - An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other. | 06-30-2011 |
20110156994 | DISPLAY DEVICE - To provide a display device which can realize multi-gray scale display by reducing voltage fluctuation of a pixel, a display device includes a plurality of source signal lines, a plurality of gate signal lines which is provided so as to intersect with the source signal lines, and a pixel electrode to which a signal voltage of the source signal line is applied through a transistor including an oxide semiconductor, which is provided near an intersection portion of the source signal line and the gate signal line; in which in the pixel electrode which is provided between a pair of the adjacent source signal lines, edge portions thereof overlap with edge portions of the source signal lines and an overlapped area with one of the source signal lines is substantially equal to an overlapped area with the other source signal line. | 06-30-2011 |
20110157128 | DISPLAY DEVICE AND ELECTRONIC DEVICE - Multiple gray levels are expressed in a display device. The display device includes a pixel portion where pixels including transistors and display elements are arranged in matrix, a gate driver electrically connected to a gate of the transistor, a source driver electrically connected to a source or a drain of the transistor, and a data processing circuit which outputs a signal to the source driver. The transistor includes an oxide semiconductor. In the data processing circuit, n-bit digital data of input m-bit digital data (m and n are positive integers, where m>n) is used for voltage gradation and (m−n) bit digital data is used for time gradation. | 06-30-2011 |
20110157216 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE - To provide a liquid crystal display device which can perform image display in both modes: a reflective mode where external light is used as an illumination light source; and a transmissive mode where a backlight is used. In one pixel, a region where incident light through a liquid crystal layer is reflected to perform display (reflective region) and a region through which light from the backlight passes to perform display (transmissive region) are provided, and image display can be performed in both modes: the reflective mode where external light is used as an illumination light source; and the transmissive mode where the backlight is used as an illumination light source. In addition, two transistors connected to respective pixel electrode layers are provided in one pixel, and the two transistors are separately operated, whereby display of the reflective region and display of the transmissive region can be controlled independently. | 06-30-2011 |
20110157252 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - An object is to provide a liquid crystal display device which can recognize image display even when the liquid crystal display device is used in a dim environment. In one pixel, a pixel electrode including both of a region where incident light through a liquid crystal layer is reflected and a transmissive region is provided, and image display can be performed in both modes: the reflective mode where external light is used as an illumination light source; and the transmissive mode where the backlight is used as an illumination light source. When there is external light with insufficient brightness, that is, in a dim environment, the backlight emits weak light and an image is displayed in the reflective mode, whereby image display can be performed. | 06-30-2011 |
20110157253 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE - An object is to provide a liquid crystal display device in which image display can be recognized even in an environment where light is dim around the liquid crystal display device. Another object is to provide a liquid crystal display device capable of image display in both modes of a reflective mode in which external light is used as a light source and a transmissive mode in which a backlight is used. One pixel is provided with a pixel electrode having both of a region where light incident through a liquid crystal layer is reflected and a region having a light-transmitting property, so that image display can be performed in both modes of a reflective mode in which external light is used as a light source and a transmissive mode in which a backlight is used. | 06-30-2011 |
20110157254 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE - It is an object to provide a liquid crystal display device which can recognize image display even in the dim surrounding environment of the liquid crystal display device. It is another object to provide a liquid crystal display device which can perform image display in both modes: a reflective mode in which external light is used as an illumination light source; and a transmissive mode in which a backlight is used. A plurality pairs of a pixel in which incident light through a liquid crystal layer is reflected and a light-transmitting pixel are provided; therefore, display image can be performed in both modes: the reflective mode in which external light is used as an illumination light source; and the transmissive mode in which a backlight is used. Further, each reflective pixel and light-transmitting pixel may be connected to an independent signal driver circuit. | 06-30-2011 |
20110157961 | SEMICONDUCTOR DEVICE - The semiconductor device includes a source line, a bit line, a first signal line, a second signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line, a second driver circuit electrically connected to the first signal line, a third driver circuit electrically connected to the second signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material. | 06-30-2011 |
20110175087 | SEMICONDUCTOR DEVICE - To provide a storage device in which advantages of both a nonvolatile storage device and a volatile storage device can be obtained, a semiconductor device includes a first transistor provided in or over a substrate and a second transistor provided above the first transistor, where at least part of the first transistor and the second transistor are overlapped with each other, and a gate electrode of the first transistor and a source or drain electrode of the second transistor are electrically connected to each other. It is preferable that the first transistor be provided using single crystal silicon and the second transistor be provided using an oxide semiconductor having extremely low off-state current. | 07-21-2011 |
20110176263 | PORTABLE ELECTRONIC DEVICE - A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion. | 07-21-2011 |
20110176348 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device in which stored data can be retained even when power is not supplied, and there is no limitation on the number of write cycles. The semiconductor device includes a source line, a bit line, a first signal line, a second signal line, a word line, a memory cell connected between the source line and the bit line, a first driver circuit electrically connected to the bit line, a second driver circuit electrically connected to the first signal line, a third driver circuit electrically connected to the second signal line, and a fourth driver circuit electrically connected to the word line and the source line. The first transistor is formed using a semiconductor material other than an oxide semiconductor. The second transistor is formed using an oxide semiconductor material. | 07-21-2011 |
20110176354 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and does not have a limitation on the number of times of writing operations. A semiconductor device includes a source-bit line, a first signal line, a second signal line, a word line, and a memory cell connected between the source-bit lines. The memory cell includes a first transistor, a second transistor, and a capacitor. The second transistor is formed including an oxide semiconductor material. A gate electrode of the first transistor, one of a source and drain electrodes, and one of electrodes of the capacitor are electrically connected to one another. The source-bit line and a source electrode of the first transistor are electrically connected to each other. Another source-bit line adjacent to the above source-bit line and a drain electrode of the first transistor are electrically connected to each other. | 07-21-2011 |
20110176357 | SIGNAL PROCESSING CIRCUIT AND METHOD FOR DRIVING THE SAME - It is an object to provide a memory device for which a complex manufacturing process is not necessary and whose power consumption can be suppressed and a signal processing circuit including the memory device. In a memory element including a phase-inversion element by which the phase of an input signal is inverted and the signal is output such as an inverter or a clocked inverter, a capacitor which holds data and a switching element which controls storing and releasing of electric charge in the capacitor are provided. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. The memory element is applied to a memory device such as a register or a cache memory included in a signal processing circuit. | 07-21-2011 |
20110176377 | SEMICONDUCTOR MEMORY DEVICE - A driver circuit having a redundant control function to store address data of a defective memory cell is provided to compensate a defect of a memory cell array. In other words, address data of a defective memory cell is stored not by using part of the memory cell array, but by using a non-volatile memory, which is provided in a memory controller, to store address data of a defective memory cell. The memory controller storing the address data of a defective memory cell contributes an increase in process speed, because it is not necessary to access the memory cell array in order to obtain the address data of the defective memory cell. | 07-21-2011 |
20110181349 | SEMICONDUCTOR DEVICE - The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current. | 07-28-2011 |
20110181786 | DISPLAY DEVICE AND ELECTRONIC APPARATUS - To provide a display device whose display can be recognized even in dark places or under the strong outside light. The display device performs display by controlling the number of gray scales in accordance with the intensity of outside light, which means a display mode can be switched in accordance with the data to be displayed on the display screen. A video signal generation circuit is controlled in each display mode in such a manner that it directly outputs an input video signal with an analog value, outputs a signal with a binary digital value, or outputs a signal with a multivalued digital value. As a result, gray scales displayed in pixels are timely changed. Accordingly, clear images can be displayed while maintaining high visibility in various environments, in the wide range from, for example, dark places or indoors (e.g., under a fluorescent lighting) to outdoors (e.g., under the sunlight). | 07-28-2011 |
20110186949 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 10 | 08-04-2011 |
20110187410 | NONVOLATILE LATCH CIRCUIT AND LOGIC CIRCUIT, AND SEMICONDUCTOR DEVICE USING THE SAME - To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion configured to hold data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, a capacitor electrically connected to a source electrode or a drain electrode of the transistor is included. | 08-04-2011 |
20110187688 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - A semiconductor device capable of inputting signals and power without the use of an FPC is provided. The semiconductor device includes a first substrate and a second substrate. A receiver antenna is provided on a surface side of the first substrate. The second substrate is provided with a transmitter antenna and an integrated circuit. The second substrate is attached on a back side of the first substrate. The receiver antenna and the transmitter antenna overlap with each other with the first substrate provided therebetween. Thus, the distance between the antennas can be kept constant, so that signals and power can be received highly efficiently. | 08-04-2011 |
20110199028 | Moving Object, Wireless Power Feeding System, and Wireless Power Feeding Method - An object is to provide a moving object structure capable of reducing power loss caused when power is supplied from a power feeding device to a moving object by wireless communication. Another object is to provide a moving object structure capable of reducing the intensity of radio waves radiated to the surroundings. A moving object having a plurality of antennas receives radio waves transmitted from a power feeding device. At least one of the plurality of antennas is installed apart from the other antenna(s) of the moving object. Then, the radio waves transmitted from the power feeding device are received by all the plurality of antennas and converted into electric energy. Alternatively, the radio waves transmitted from the power feeding device are received by one or more selected from the plurality of antennas and converted into electric energy. | 08-18-2011 |
20110199364 | DISPLAY DEVICE AND DRIVING METHOD - An object is to reduce power consumption of a display device and to suppress deterioration of display quality. As a transistor provided for each pixel, a transistor including an oxide semiconductor layer is used. Note that off-state current of the transistor can be decreased when the oxide semiconductor layer is highly purified. Therefore, variation in the value of a data signal due to the off-state current of the transistor can be suppressed. That is, display deterioration (change) which occurs when writing frequency of the data signal to the pixel including the transistor is reduced (when a break period is lengthened) can be suppressed. In addition, flickers in display which generates when the frequency of an alternating-current driving signal supplied to a signal line in the break period is reduced can be suppressed. | 08-18-2011 |
20110210327 | LIQUID CRYSTAL DISPLAY DEVICE - An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated. | 09-01-2011 |
20110210328 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit. | 09-01-2011 |
20110210339 | SEMICONDUCTOR DEVICE - A semiconductor device including a non-volatile memory cell including a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor is provided. Data is written or rewritten to the memory cell by turning on the writing transistor and supplying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected to each other, and then turning off the writing transistor so that the predetermined amount of charge is held in the node. Further, when a transistor whose threshold voltage is controlled and set to a positive voltage is used as the reading transistor, a reading potential is a positive potential. | 09-01-2011 |
20110210949 | DISPLAY DEVICE AND E-BOOK READER PROVIDED THEREWITH - An object is to provide a display device in which deterioration in display quality due to a change in voltage applied is reduced and a lower visible efficiency in changing display is prevented. The display device has a display controller configured to make the display portion perform display by switching a first still image display period including a writing period in which a first image signal is written and a holding period in which the first image signal is held, and a second still image display period including a writing period in which a second image signal is written and a holding period in which the second image signal is held. The display controller is configured to make a length of the writing period of the first still image display period and a length of the writing period of the second still image display period different from each other. | 09-01-2011 |
20110210957 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - In a still image display mode, a driving signal and power supply voltage are supplied to a first driver circuit and a driving signal and power supply voltage are supplied to a second driver circuit, and an image signal is output to n pixels. After that, at least the supply of the driving signal and the power supply voltage to the second driver circuit is stopped and an image of the pixel portion based on the image signal is held as a still image. A series of these operations is performed N (N is a natural number) times. In the case where N is 2 or more, stopping the supply of the driving signal and the power supply voltage to the second driver circuit in a K-th (K is a natural number, 2≦K≦N) period is set longer than that in a (K−1)-th period. | 09-01-2011 |
20110212571 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit. | 09-01-2011 |
20110215318 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit. | 09-08-2011 |
20110215319 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit. | 09-08-2011 |
20110216048 | DISPLAY DEVICE - A controller outputs a row rewriting control signal and a column rewriting control signal as well as a data signal. The row rewriting control signal is a signal selecting whether a selection signal is supplied to a first scan line, and the column rewriting control signal is a signal selecting whether a selection signal and a data signal are supplied to the second scan line and the signal line, respectively. The row rewriting control signal and the column rewriting control signal are thus output from the controller, which makes it possible to select whether a data signal is rewritten in each of a plurality of pixels arranged in matrix. Consequently, even in the case of displaying an image having a specific area, the display of which is often changed, a high-quality image can be displayed with reduced power consumption. | 09-08-2011 |
20110216571 | SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DEVICE - A matrix is formed using a plurality of memory cells in each of which a drain of the writing transistor is connected to a gate of a reading transistor and one electrode of a capacitor. A gate of the writing transistor, a source of the writing transistor, a source of the reading transistor, and a drain of the reading transistor are connected to a writing word line, a writing bit line, a reading bit line, and a bias line, respectively. In order to reduce the number of wirings, a writing word line to which the gate of the writing transistor is not connected is substituted for the reading word line. Further, the writing bit line is substituted for the reading bit line. | 09-08-2011 |
20110220725 | SEMICONDUCTOR DEVICE - A semiconductor device which may be used as an ID chip and data may be rewritten only one time. In addition, a semiconductor device may be used as an ID chip and data may be written except when manufacturing the chip. The invention has a modulating circuit, a demodulating circuit, a logic circuit, a memory circuit, and an antenna circuit over an insulating substrate. The modulating circuit and the demodulating circuit are electrically connected to an antenna circuit, the demodulating circuit is connected to the logic circuit, the memory circuit stores an output signal of the logic circuit, and the memory circuit is a fuse memory circuit using a fuse element. | 09-15-2011 |
20110221272 | Semiconductor Device - The invention provides a circuit which provides a stabilized boosting in the case where a semiconductor device typified by a non-contact ID chip includes a circuit which requires a higher voltage than a logic circuit does. By inputting an alternating signal inputted from an antenna to a charge pump circuit as it is or through a logic circuit, a charge pump can operate with a stabilized frequency that a clock frequency is not affected by a variation of elements and the ambient temperature, thus a stabilized boosting can be provided. | 09-15-2011 |
20110221475 | LOGIC CIRCUIT - An object is to apply a transistor using an oxide semiconductor to a logic circuit including an enhancement transistor. The logic circuit includes a depletion transistor | 09-15-2011 |
20110228065 | WIRELESS SENSOR DEVICE - A wireless sensor device capable of constant operation without replacement of batteries. The wireless sensor device is equipped with a rechargeable battery and the battery is recharged wirelessly. Radio waves received at an antenna circuit are converted into electrical energy and stored in the battery. A sensor circuit operates with the electrical energy stored in the battery, and acquires information. Then, a signal containing the information acquired is converted into radio waves at the antenna circuit, whereby the information can be read out wirelessly. | 09-22-2011 |
20110230018 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate electrode and a region which does not overlap with the gate electrode is provided in one TFT. Another feature of the present invention is that gate electrode comprises a first conductive layer and a second conductive layer and portion of the gate wiring has a clad structure comprising the first conductive layer and the second conductive layer with a low resistance layer interposed therebetween | 09-22-2011 |
20110241011 | FIELD-SEQUENTIAL DISPLAY DEVICE - A first transistor in which an image signal is input to one of a first source and a first drain through an image signal line and a first scan signal is input to the first gate through a first scan signal line; a capacitor whose one of two electrodes is electrically connected to the other of the first source and the first drain of the first transistor; a second transistor in which one of a second source and a second drain is electrically connected to the other of the first source and the first drain of the first transistor and a second scan signal is input to a second gate through a second scan signal line; and a liquid crystal element whose first electrode is electrically connected to the other of the second source and the second drain of the second transistor. | 10-06-2011 |
20110242070 | SEMICONDUCTOR DISPLAY DEVICE - A semiconductor display device comprising a pixel portion and a signal line driver circuit comprising a first circuit, a second circuit configured to control timing of the sampled serial video signals by the first circuit, and a third circuit configured to perform signal processing on the parallel video signals, wherein the second circuit comprises a first semiconductor element formed over a first substrate, the first semiconductor element including a first semiconductor layer, wherein the third circuit comprises a second semiconductor element formed over a second substrate, the second semiconductor element including a second semiconductor layer, wherein the pixel portion comprises a third semiconductor element formed over the second substrate, the third semiconductor element including a third semiconductor layer, wherein the first semiconductor layer comprises silicon or germanium, and wherein each the second semiconductor layer and the third semiconductor layer has a wider bandgap than the first semiconductor layer. | 10-06-2011 |
20110242071 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - To increase the frequency of input of image signals, a pixel portion of a liquid crystal display device is divided into a plurality of regions, and input of image signals is controlled in each of the plurality of regions. As a result, a plurality of scan lines can be selected at the same time in the liquid crystal display device. That is, in the liquid crystal display device, image signals can be simultaneously supplied to pixels placed in a plurality of rows, among pixels arranged in matrix. Thus, the frequency of input of an image signal to each pixel can be increased without change in response speed of a transistor or the like included in the liquid crystal display device. | 10-06-2011 |
20110242100 | DRIVING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE - It is an object to provide a specific driving method for reduction in power consumption in displaying a 3D image with field sequential driving. A driving method of a liquid crystal display device is a method in which a stereoscopic image can be perceived with a liquid crystal display device switching an image for a left eye and an image for a right eye to display the image for the left eye or the image for the right eye, and a pair of glasses having a switching means with which the image for the right eye and the image for the left eye are switched in synchronization with display of the image for the left eye or the image for the right eye in order that the left or right eye of a viewer may selectively perceive the image for the left eye or the image for the right eye; the image for the left eye and the image for the right eye are perceived by the left eye or right eye in a mixed color by switching light which is emitted from a backlight portion and which corresponds to a plurality of colors, within a predetermined period, and the light which is emitted from the backlight portion are continuously emitted in accordance with an image signal of each of a plurality of colors which forms the image for the left eye and the image for the right eye. | 10-06-2011 |
20110248970 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - In the liquid crystal display device, image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix in a pixel portion where input of image signals is controlled by transistors including polycrystalline semiconductors or single crystal semiconductors in channel formation regions. Thus, the image quality of the liquid crystal display device can be improved. | 10-13-2011 |
20110248978 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - To increase the frequency of input of image signals in terms of design in a field-sequential liquid crystal display device. Image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix in a pixel portion of the liquid crystal display device. Thus, the frequency of input of an image signal to each pixel can be increased without change in response speed of a transistor or the like included in the liquid crystal display device. | 10-13-2011 |
20110249037 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - In a liquid crystal display device, image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix in a pixel portion where input of image signals is controlled by transistors including amorphous semiconductors or microcrystalline semiconductors in channel formation regions. Thus, the frequency of input of image signals to each pixel can be increased without changing the response speed of the transistors or the like included in the liquid crystal display device. | 10-13-2011 |
20110249038 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE - A liquid crystal display device by which a color moving image displayed with a field sequential system and a monochrome still image are switched and displayed. In a moving-image mode, a driving control circuit controls the backlight portion to emit light corresponding to any one of a plurality of colors of the first light source, and controls the display panel by writing of the image signal in the display panel for each of the plurality of colors within a predetermined period. In a still-image mode, the driving control circuit controls the backlight portion to keep the second light source emitting light, and controls the display panel to hold the image signal written thereto, for a predetermined period. | 10-13-2011 |
20110255022 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A display device includes a main body, a support stand, and a display portion. The display portion includes a pixel having a TFT and a capacitor. The capacitor includes a capacitor electrode on an insulating surface, an insulating film on the capacitor electrode, and a pixel electrode of the TFT on the insulating film. | 10-20-2011 |
20110255326 | Semiconductor Device - The invention provides a semiconductor device that power is stabilized by suppressing power consumption as much as possible. The semiconductor device of the invention includes a logic portion and a memory portion each including a plurality of transistors, a detecting portion for detecting one or both of operation frequencies of the logic portion and the memory portion, a Vth control for supplying a Vth control signal to one or both of the logic portion and the memory portion, and an antenna. Each of the plurality of transistors has a first gate electrode which is input with a logic signal, a second gate electrode which is input with the Vth control signal, and a semiconductor film such that the second gate electrode, the semiconductor film, and the first gate electrode are provided in this order from the bottom. | 10-20-2011 |
20110260172 | EL DISPLAY DEVICE AND ELECTRONIC DEVICE - An EL display device capable of producing a vivid multi-gradation color display, and an electronic device having the EL display device. An electric current supplied to an EL element is controlled by providing a resistor between a current control TFT and the EL element formed in a pixel, the resistor having a resistance higher than the on-resistance of the current control TFT. The gradation display is executed by a time-division drive system which controls the emission and non-emission of light of the EL element by time, preventing the effect caused by a dispersion in the characteristics of the current control TFT. | 10-27-2011 |
20110266564 | SEMICONDUCTOR DISPLAY DEVICE - A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line. | 11-03-2011 |
20110267297 | SEMICONDUCTOR DISPLAY DEVICE AND DRIVING METHOD THE SAME - It is an object to provide a semiconductor display device having a touch panel, which can reduce power consumption. The semiconductor display device includes a panel which is provided with a pixel portion and a driver circuit which controls an input of the image signal to the pixel portion, and a touch panel provided in a position overlapping with the panel in the pixel portion. The pixel portion includes a display element configured to perform display in accordance with voltage of the image signal to be input, and a transistor configured to control retention of the voltage. The transistor includes an oxide semiconductor in a channel formation region. The driving frequency of the driver circuit, that is, the number of writing operations of the image signal for a certain period is changed in accordance with an operation signal from a touch panel. | 11-03-2011 |
20110267330 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE - It is an object to provide a transmissive liquid crystal display device in which power consumption is reduced and deterioration in display quality is suppressed. As a backlight, a surface-emission light source is employed. The light source is a light source which performs surface light emission, so that the light emission area is large. Accordingly, the backlight can effectively radiate heat. Thus, even in the case where an image signal is not input to a pixel for a long period, the pixel can hold the image signal. In other words, both a reduction in power consumption and a suppression of deterioration in display quality can be realized. | 11-03-2011 |
20110267331 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes a pixel portion, a selection signal output circuit which outputs a selection signal in the first operation mode and stops outputting the selection signal in a second operation mode, a pixel data signal output circuit which generates and outputs a pixel data signal, and a backlight unit including a cold cathode fluorescent lamp. The pixel portion includes: a transistor which includes a gate electrode supplied with a selection signal and a source electrode and a drain electrode one of which is supplied with a pixel data signal in a first operation mode and which remains off in a second operation mode; a first electrode electrically connected to the other of the source electrode and the drain electrode of the transistor; a second electrode; and a liquid crystal. The transistor includes an oxide semiconductor layer in which a channel is formed. | 11-03-2011 |
20110267381 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC APPLIANCE - An object is to provide a display device that achieves low power consumption and an improved quality of moving and still images. A display device comprises: a display panel provided with a plurality of pixels each including sub-pixels with color filters of red, green, and blue, and a sub-pixel for controlling a transmission of white light; a backlight area including light sources of red, green, blue, and white; an image switch circuit that switches the display panel between a moving image mode and a still image mode; and a display control circuit that controls in the moving image mode a luminance of the light sources of red, green, and blue included in the backlight area, and controls in the still image mode a luminance of a light source of white included in the backlight area. | 11-03-2011 |
20110273366 | Display Device And An Electronic Apparatus Using The Same - In a conventional display device comprising a sub-display, the display device is increased in thickness and in the number of components as the number of displays is increased. In the present invention, a dual emission display device is used so that either surface of a display is used as a main display or a sub-display. Accordingly, the display device can be reduced in thickness and in the number of components. Further, mechanical reliability can be enhanced when the invention is applied to a tablet PC, a video camera and the like. | 11-10-2011 |
20110278579 | DISPLAY DEVICE AND CONTROLLING METHOD THEREOF - A conventional setting voltage was a value with an estimated margin of a characteristic change of a light emitting element. Therefore, a voltage between the source and drain of a driver transistor V | 11-17-2011 |
20110279441 | Display Device and Driving Method of the Same, and Electronic Apparatus - The brightness of a light emitting element varies when changes in ambient temperature or changes with time occur. In view of this, the invention provides a display device where the influence of variations in the current value of the light emitting element due to changes in ambient temperature and changes with time can be suppressed. The display device of the invention includes a monitoring element that is driven with a constant current, and a voltage applied to the monitoring element is detected and inputted to a light emitting element. In other words, the monitoring element is driven with a low current, and a voltage applied to the monitoring element is inputted to the light emitting element such that the light emitting element is driven with a constant current. | 11-17-2011 |
20110298082 | SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF DRIVING THE SAME - A transistor causes fluctuation in the threshold and mobility due to the factor such as fluctuation of the gate length, the gate width, and the gate insulating film thickness generated by the difference of the manufacturing steps and the substrate to be used. As a result, there is caused fluctuation in the current value supplied to the pixel due to the influence of the characteristic fluctuation of the transistor, resulting in generating streaks in the display image. A light emitting device is provided which reduces influence of characteristics of transistors in a current source circuit constituting a signal line driving circuit until the transistor characteristics do not affect the device and which can display a clear image with no irregularities. A signal line driving circuit of the present invention can prevent streaks in a displayed image and uneven luminance. Also, the present invention makes it possible to form elements of a pixel portion and driving circuit portion from polysilicon on the same substrate integrally. In this way, a display device with reduced size and current consumption is provided as well as electronic equipment using the display device. | 12-08-2011 |
20110304311 | DC/DC CONVERTER, POWER SUPPLY CIRCUIT, AND SEMICONDUCTOR DEVICE - Provided is a DC-DC converter with improved power conversion efficiency. A transistor which is incorporated in the DC-DC converter and functions as a switching element for controlling output power includes, in its channel formation region, a semiconductor material having a wide band gap and significantly small off current compared with silicon. The transistor further comprises a back gate electrode, in addition to a general gate electrode, and a back gate control circuit for controlling a potential applied to the back gate electrode in accordance with the output power from the DC-DC converter. The control of the potential applied to the back gate electrode by the back gate control circuit enables the threshold voltage to decrease the on-state resistance when the output power is high and to increase the off-state current when the output power is low. | 12-15-2011 |
20110309688 | WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD - An object is to provide a power feeding system and a power feeding method which are higher convenient for a power feeding user on the power receiving side. Another object is to provide a power feeding system and a power feeding method which can offer efficient services by determining or managing a power feeding user and controlling the amount of power supplied to the power receiver appropriately by a company on the power feeding side. A power feeding device which supplies power to a power receiver wirelessly manages the power receiver on the basis of identification information of the power receiver and controls power transmitted to the power receiver on the basis of position information of the power receiver. | 12-22-2011 |
20110310133 | DRIVING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE - To improve the quality of a liquid crystal display device, writing of an image signal and lighting of a backlight are sequentially performed not in the whole pixel portion of the liquid crystal display device but in each given region of the pixel portion. Thus, the frequency of input of an image signal to each pixel of the liquid crystal display device can be increased. As a result, display degradation caused in the liquid crystal display device such as color break can be suppressed, and the quality of an image can be improved. | 12-22-2011 |
20110316818 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC APPLIANCE - Included are a display panel including first to third pixel regions and a driver circuit; a backlight portion divided into a first light source region where light is emitted in response to input of a video signal to the first pixel region, a second light source region where light is emitted in response to input of a video signal to the second pixel region, and a third light source region where light is emitted in response to input of a video signal to the third pixel region; a video signal selection circuit used to supply the video signals from plural memory circuits to the driver circuit; a control circuit that supplies a control signal for controlling the driver circuit; a sequence determination circuit that supplies a backlight control signal and a selection signal; and a random number generation circuit used for selection from colors in the sequence determination circuit. | 12-29-2011 |
20120001954 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device comprising a backlight and a pixel portion including first to 2n-th scan lines, wherein, in a first case of expressing a color image, first pixels controlled by the first to n-th scan lines are configured to express a first image using at least one of first to third hues supplied in a first rotating order, and second pixels controlled by the (n+1)-th to 2n-th scan lines are configured to express a second image using at least one of the first to third hues supplied in a second rotating order, wherein, in a second case of expressing a monochrome image, the first and second pixels controlled by the first to 2n-th scan lines are configured to express the monochrome image by external light reflected by the reflective pixel electrode, and wherein the first rotating order is different from the second rotating order. | 01-05-2012 |
20120001955 | LIQUID CRYSTAL DISPLAY DEVICE - The liquid crystal display device includes a pixel portion including first and second regions and light sources. The first and second regions each include a liquid crystal element whose transmissivity is controlled in accordance with a voltage of an image signal and a transistor for controlling holding of the voltage, whose off-state current is extremely low. The light sources perform first and second drivings: lights whose hues are different from each other are sequentially supplied to the first region in a first rotating order and the lights are sequentially supplied to the second region in a second rotating order which is different from the first rotating order in the first driving; and a light having a single hue is supplied consecutively to one or both of the first and second regions in the second driving. The period for holding the voltage is different between the first and second drivings. | 01-05-2012 |
20120002127 | LIQUID CRYSTAL DISPLAY DEVICE - An object is to provide a liquid crystal display device capable of image display according to an environment around the liquid crystal display device, e.g., in a bright environment or a dim environment. Another object is to provide a liquid crystal display device capable of displaying an image in both modes of a reflective mode in which external light is used as a light source and a transmissive mode in which a backlight is used. In order to achieve at least one of the above objects, a liquid crystal display device is provided with a region (a reflective region) where display is performed with reflection of incident light through a liquid crystal layer and a region (a transmissive region) where display is performed with transmission of light from a backlight and can switch the transmissive mode and the reflective mode. In the case where a full-color image is displayed, a pixel portion includes at least a first region and a second region, a plurality of lights of different hues are sequentially supplied to the first region according to a first order, and a plurality of lights of different hues are also sequentially supplied to the second region according to a second order which is different from the first order. | 01-05-2012 |
20120002132 | DRIVING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE - Disclosed is a field-sequential liquid crystal display device having a plurality of pixels each of which is arranged to sequentially transmit light obtained by mixing at least two lights in addition to lights of three primary colors generated by a plurality of light sources. | 01-05-2012 |
20120002133 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE - An object of the invention is to suppress degradation in image quality of a liquid crystal display device which performs display by field sequential method and to reduce power consumption of a backlight. The highest brightness of a first color light in a pixel region is detected. Gamma correction is performed so that transmittance of a pixel of the region displaying the highest brightness of the first color light is set to maximum and transmittance of other pixel of the region is decreased in accordance with lowering of the first color light intensity, and the region is irradiated with the highest brightness of the first color light. Similarly, a second color light is irradiated in another region concurrently with irradiation of the first color, whereby input of an image signal and lighting of the backlight are performed simultaneously in every region of the pixel portion. | 01-05-2012 |
20120012847 | DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor. | 01-19-2012 |
20120013394 | SOURCE FOLLOWER CIRCUIT OR BOOTSTRAP CIRCUIT, DRIVER CIRCUIT COMPRISING SUCH CIRCUIT, AND DISPLAY DEVICE COMPRISING SUCH DRIVER CIRCUIT - In the case of using an analog buffer circuit, an input voltage is required to be added a voltage equal to a voltage between the gate and source of a polycrystalline silicon TFT; therefore, a power supply voltage is increased, thus a power consumption is increased with heat. In view of the foregoing problem, the invention provides a depletion mode polycrystalline silicon TFT as a polycrystalline silicon used in an analog buffer circuit such as a source follower circuit. The depletion mode polycrystalline silicon TFT has a threshold voltage on its negative voltage side; therefore, an input voltage does not have to be increased as described above. As a result, a power supply voltage requires no increase, thus a low power consumption of a liquid crystal display device in particular can be realized. | 01-19-2012 |
20120019567 | LIQUID CRYSTAL DISPLAY DEVICE AND DRIVING METHOD THEREOF - To improve the image quality of a liquid crystal display device. In the liquid crystal display device, writing of an image signal and the turning on the backlights are not sequentially performed in the entire pixel portion but are sequentially performed per specific region of the pixel portion. Thus, it is possible to increase the frequency of input of an image signal to each pixel of the liquid crystal display device. Accordingly, deterioration of display such as color break generated in the liquid crystal display device can be suppressed, and the image quality can be improved. | 01-26-2012 |
20120025064 | OPTICAL SENSOR DEVICE AND ELECTRONIC APPARATUS - In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can also be reduced. | 02-02-2012 |
20120032730 | SEMICONDUCTOR INTEGRATED DEVICE - To reduce power consumption of a semiconductor integrated circuit and to reduce delay of the operation in the semiconductor integrated circuit, a plurality of sequential circuits included in a storage circuit each include a transistor whose channel formation region is formed with an oxide semiconductor, and a capacitor whose one electrode is electrically connected to a node that is brought into a floating state when the transistor is turned off. By using an oxide semiconductor for the channel formation region of the transistor, the transistor with an extremely low off-state current (leakage current) can be realized. Thus, by turning off the transistor in a period during which power supply voltage is not supplied to the storage circuit, the potential in that period of the node to which one electrode of the capacitor is electrically connected can be kept constant or almost constant. Consequently, the above objects can be achieved. | 02-09-2012 |
20120033483 | SEMICONDUCTOR DEVICE AND DRIVING METHOD OF SEMICONDUCTOR DEVICE - A memory cell includes a capacitor, a first transistor, and a second transistor whose off-state current is smaller than that of the first transistor. The first transistor has higher switching speed than the second transistor. The first transistor, the second transistor, and the capacitor are electrically connected in series. Accumulation of charge in the capacitor and release of charge from the capacitor are performed through the first transistor and the second transistor. In this manner, the power consumption of the semiconductor device can be reduced and data can be written and read at higher speed. | 02-09-2012 |
20120038618 | CONTROL CIRCUIT OF LIQUID CRYSTAL DISPLAY DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, AND ELECTRONIC DEVICE INCLUDING LIQUID CRYSTAL DISPLAY DEVICE - A current that flows through a common source amplifier circuit provided in a current amplifier circuit of an operational amplifier in displaying a moving image is made to be different from that in displaying a still image. Specifically, in one embodiment of the present invention, current source circuits which are provided in the current amplifier circuit in the operational amplifier operate by switching the current source circuit used for displaying a moving image and the current source circuit used for displaying a still image. The current amplitude in the common source amplifier circuit is controlled by switching the current source circuits, whereby low power consumption in the power supply circuit is achieved. The switching of the current source circuit in the operational amplifier is performed by a display control circuit for controlling a liquid crystal display panel in order to switch moving image display and still image display. | 02-16-2012 |
20120056537 | EL DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - An object is to suppress luminance variation due to change in the amount of current flowing through a light-emitting element, caused by change in environmental temperature. A monitor circuit for compensating the cathode potential of the light-emitting element in accordance with environmental temperature is provided in the vicinity of a pixel portion in order to compensate a change in properties, due to environmental temperature, of a transistor including an oxide semiconductor layer and the light-emitting element. The monitor circuit includes a monitor power supply line, a monitor transistor including an oxide semiconductor layer, a monitor light-emitting element, a current source circuit, and an amplification circuit that compensates the cathode potential of the light-emitting element. The potential of the monitor power supply line is lower than the potential of a power supply line in the pixel. | 03-08-2012 |
20120056862 | DISPLAY DEVICE AND ELECTRONIC APPARATUS - To provide a display device whose display can be recognized even in dark places or under the strong outside light. The display device performs display by controlling the number of gray scales in accordance with the intensity of outside light, which means a display mode can be switched in accordance with the data to be displayed on the display screen. A video signal generation circuit is controlled in each display mode in such a manner that it directly outputs an input video signal with an analog value, outputs a signal with a binary digital value, or outputs a signal with a multivalued digital value. As a result, gray scales displayed in pixels are timely changed. Accordingly, clear images can be displayed while maintaining high visibility in various environments, in the wide range from, for example, dark places or indoors (e.g., under a fluorescent lighting) to outdoors (e.g., under the sunlight). | 03-08-2012 |
20120061673 | METHOD FOR MANUFACTURING LIGHT-EMITTING DISPLAY DEVICE - It is an object of one embodiment of the present invention to manufacture a light-emitting display device by simplifying a manufacturing process of a transistor, without an increase in the number of steps as well as the number of photomasks as compared to those in the conventional case. A step for processing a semiconductor layer into an island shape is omitted by using a high-resistance oxide semiconductor which is intrinsic or substantially intrinsic for the semiconductor layer, used to form transistors. Formation of an opening in the semiconductor layer or an insulating layer formed over the semiconductor layer and etching of an unnecessary portion of the semiconductor layer are performed at the same time; thus, the number of photolithography steps is reduced. | 03-15-2012 |
20120062315 | PLL CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE SAME - A PLL circuit includes a phase detector, a loop filter (LF), a voltage-controlled oscillator (VCO), and a frequency divider. The phase detector compares a phase of a signal Fs which is input from outside with a phase of a signal Fo/N which is input from the frequency divider. The loop filter generates a signal Vin by removing alternating current components from a signal input from the phase detector. The voltage-controlled oscillator outputs a signal Fo based on the signal Vin input from the loop filter. The frequency divider converts the signal Fo output from the voltage-controlled oscillator into Fo/N (frequency division by N), and outputs it to the phase detector. | 03-15-2012 |
20120062529 | DISPLAY DEVICE - Provided is to secure a data-writing period to a source line and reduce the number of the IC chips used. N image data (e.g., three image data, RGB) are sequentially input to one input terminal. Three switches, three first memory elements, three transfer switches, three second memory elements, and three buffers are connected in parallel to the input terminal. The three switches are turned on respectively. RGB image data are held in the three respective first memory elements. In a selection period of a gate line of an (m−1)-th row, image data of an m-th row are written to the first memory elements. When the three transfer switches are turned on in a selection period of a gate line of an m-th row, the image data are transferred to and held in the second memory elements. Then, the image data are output to each source line through each buffer. | 03-15-2012 |
20120062538 | EL DISPLAY DEVICE, DRIVING METHOD OF EL DISPLAY DEVICE, AND ELECTRONIC DEVICE - The present invention relates to an EL display device in which a stereoscopic image is perceived and eyeglasses having a switching means with which an image for a left eye or an image for a right eye is selectively perceived. The image for the left eye and the image for the right eye are displayed in a display portion of the EL display device by holding an image signal from a signal line in a first capacitor in a first period, holding the image signal held in the first capacitor in a second capacitor to control current that flows through an emission-control transistor in a second period, and turning on a driving transistor to control light emission of a light-emitting element and holding an image signal from a signal line in the first capacitor in a third period. | 03-15-2012 |
20120062539 | Display device - A three-dimensional-image display device capable of displaying an image with high brightness while suppressing power consumption is provided. The display device is provided with an image display portion where a plurality of pixels is provided in a pixel portion, a light-shielding portion including a first shutter and a second shutter, and a control portion for controlling the transmittances of the first shutter and the second shutter in synchronization with display of an image for the right eye or an image for the left eye in the pixel portion. The pixel includes a switching transistor for controlling an input of an image signal to the pixel, a light emitting element, a driving transistor for controlling the value of a current supplied to the light emitting element in accordance with the image signal, and a current controlling transistor for controlling whether or not the current is supplied to the light emitting element. | 03-15-2012 |
20120062561 | Display Device - An object is to provide a three-dimensional display device capable of displaying bright images with low power consumption. The display device includes: an image display portion including a pixel portion provided with a plurality of pixels; a light-blocking portion including a first shutter and a second shutter; a signal source outputting the common potential; and a controller controlling transmittances of the first shutter and the second shutter and level of the common potential output from the signal source to bring the transmittances and the level into synchronism with supply of an image signal, display of a right-eye image, or display of a left-eye image performed in the pixel portion. | 03-15-2012 |
20120062813 | TRANSISTOR, LIQUID CRYSTAL DISPLAY DEVICE, AND MANUFACTURING METHOD THEREOF - Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain electrodes (including a wiring formed using the same layer as the source and drain electrodes), a step of forming a contact hole (including the removal of an insulating layer and the like in a region other than the contact hole), and a step of forming a pixel electrode (including a wiring formed using the same layer as the pixel electrode). By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at low cost and high productivity. Formation of a parasitic channel is prevented by an improvement in shape and potential of a wiring. | 03-15-2012 |
20120063208 | MEMORY DEVICE - In a memory device, memory capacity per unit area is increased while a period in which data is held is ensured. The memory device includes a driver circuit provided over a substrate, and a plurality of memory cell arrays which are provided over the driver circuit and driven by the driver circuit. Each of the plurality of memory cell arrays includes a plurality of memory cells. Each of the plurality of memory cells includes a first transistor including a first gate electrode overlapping with an oxide semiconductor layer, and a capacitor including a source electrode or a drain electrode, a first gate insulating layer, and a conductive layer. The plurality of memory cell arrays is stacked to overlap. Thus, in the memory device, memory capacity per unit area is increased while a period in which data is held is ensured. | 03-15-2012 |
20120064650 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE - Etching of a semiconductor layer including a part over a gate wiring and formation of a contact hole for connection between a pixel electrode and a drain electrode are performed by one-time photolithography step and one-time etching step; thus, the number of photolithography steps is reduced. The exposed part of the gate wiring is covered by an insulating layer, and this insulating layer also functions as a spacer for maintaining a space for a liquid crystal layer. By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at lower cost and higher productivity. Using an oxide semiconductor for the semiconductor layer can realize a liquid crystal display device with low power consumption and high reliability. | 03-15-2012 |
20120104425 | Method of Driving A Light Emitting Device - The present invention is characterized in that a transistor with its L/W set to 10 or larger is employed, and that |V | 05-03-2012 |
20120112191 | SEMICONDUCTOR DEVICE - A data retention period in a semiconductor device or a semiconductor memory device is lengthened. The semiconductor device or the semiconductor memory includes a memory circuit including a first transistor including a first semiconductor layer and a first gate and a second transistor including a second semiconductor layer, a second gate, and a third gate The first semiconductor layer is formed at the same time as a layer including the second gate. | 05-10-2012 |
20120113086 | METHOD FOR DRIVING DISPLAY DEVICE - A method for driving a display device in which characteristics of a transistor including an oxide semiconductor can approximately be recovered to characteristics before deterioration is provided. In the method for driving the display device, by which images are displayed with the use of a plurality of frame periods, the display device is driven so that a voltage of 20 V or higher can be applied to a gate of a transistor, which is a driving element, for 1 millisecond or longer in a period, in which any one of scan lines is selected, in each frame period. For a plurality of frame periods, the rows are selected so that a voltage of 20 V or higher is applied to gates of all of the transistors which are driving elements for 1 millisecond or longer, whereby characteristics of the transistor can approximately be recovered to characteristics before deterioration. | 05-10-2012 |
20120140136 | DRIVING CIRCUIT OF A SEMICONDUCTOR DISPLAY DEVICE AND THE SEMICONDUCTOR DISPLAY DEVICE - There are provided a driving circuit of a semiconductor display device which can obtain an excellent picture without picture blur (display unevenness) and with high fineness/high resolution, and the semiconductor display device. A buffer circuit used in the driving circuit of the semiconductor display device is constituted by a plurality of TFTs each having a small channel width, and a plurality of such buffer circuits are connected in parallel with each other. | 06-07-2012 |
20120145799 | SEMICONDUCTOR DEVICE - A semiconductor device with improved reliability, in which increase in power consumption can be reduced. The semiconductor device includes an antenna for transmitting and receiving a wireless signal to/from a communication device and at least first and second functional circuits electrically connected to the antenna. The first functional circuit includes a power supply control circuit for controlling power supply voltage output from a power supply circuit in the second functional circuit. A power supply control circuit in the second functional circuit includes a transistor of which first terminal is electrically connected to an output terminal of the power supply circuit and second terminal is electrically connected to a ground line. A gate terminal of the transistor is electrically connected to the power supply control circuit included in one functional circuit. | 06-14-2012 |
20120154696 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes a pixel area including a first display region and a second display region, a light supply portion sequentially supplying a plurality of lights having different hues to the first and second display regions and an optical system. Pairs of pixels are arranged in each of the first and second display regions. The pair of pixels is composed of a right-eye pixel and a left-eye pixel. The plurality of pieces of light is supplied to the first and second display regions to emit a first light with the right-eye pixel and a second light with the left-eye pixel. The optical system orients the travel direction of the first light to a right eye of a viewer and the travel direction of the second light to a left eye of the viewer. | 06-21-2012 |
20120161127 | MEMORY DEVICE, MEMORY MODULE AND ELECTRONIC DEVICE - The first transistor includes first and second electrodes which are a source and a drain, and a first gate electrode overlapping with a first channel formation region with an insulating film provided therebetween. The second transistor includes third and fourth electrodes which are a source and a drain, and a second channel formation region which is provided between a second gate electrode and a third gate electrode with insulating films provided between the second channel formation region and the second gate electrode and between the second channel formation region and the third gate electrode. The first and second channel formation regions contain an oxide semiconductor, and the second electrode is connected to the second gate electrode. | 06-28-2012 |
20120161145 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE - An object is at least one of a longer data retention period of a memory circuit, a reduction in power consumption, a smaller circuit area, and an increase in the number of times written data can be read to one data writing operation. The memory circuit has a first field-effect transistor, a second field-effect transistor, and a rectifier element including a pair of current terminals. A data signal is input to one of a source and a drain of the first field-effect transistor. A gate of the second field-effect transistor is electrically connected to the other of the source and the drain of the first field-effect transistor. One of the pair of current terminals of the rectifier element is electrically connected to a source or a drain of the second field-effect transistor. | 06-28-2012 |
20120161239 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE - A data retention period of a memory circuit is lengthened, power consumption is reduced, and a circuit area is reduced. Further, the number of times written data can be read to one data writing operation is increased. A memory circuit has a first field-effect transistor, a second field-effect transistor, and a third field-effect transistor. A data signal is input to one of a source and a drain of the first field-effect transistor. A gate of the second field-effect transistor is electrically connected to the other of the source and the drain of the first field-effect transistor. One of a source and a drain of the third field-effect transistor is electrically connected to a source or a drain of the second field-effect transistor. | 06-28-2012 |
20120182791 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE - A memory circuit is included. The memory circuit includes n field-effect transistors (n is a natural number of 2 or more) and n capacitors each including a pair of electrodes. A digital data signal is input to one of a source and a drain of the first field-effect transistor. One of a source and a drain of the k-th field-effect transistor (k is a natural number of greater than or equal to 2 and less than or equal to n) is electrically connected to the other of a source and a drain of the (k−1)-th field-effect transistor. One of the pair of electrodes of the m-th capacitor (m is a natural number of n or less) is electrically connected to the other of a source and a drain of the m-th field-effect transistor of the n field-effect transistors. At least two of the n capacitors have different capacitance values. | 07-19-2012 |
20120188814 | MEMORY DEVICE AND SEMICONDUCTOR DEVICE - To provide a memory device which operates at high speed or a memory device in which the frequency of refresh operations is reduced. In a cell array, a potential is supplied from a driver circuit to a wiring connected to a memory cell. The cell array is provided over the driver circuit. Each of memory cells included in the cell array includes a switching element, and a capacitor in which supply, holding, and discharge of electric charge are controlled by the switching element. Further, a channel formation region of the transistor used as the switching element includes a semiconductor whose band gap is wider than that of silicon and whose intrinsic carrier density is lower than that of silicon. | 07-26-2012 |
20120188815 | TEMPORARY STORAGE CIRCUIT, STORAGE DEVICE, AND SIGNAL PROCESSING CIRCUIT - A temporary storage circuit including a reduced number of transistors is provided. The temporary storage circuit includes storage elements, each of which includes a first transistor and a second transistor. A channel of the first transistor is formed in an oxide semiconductor layer. A signal potential corresponding to data is input to a gate of the second transistor through the first transistor which is turned on by a control signal input to a gate of the first transistor. Then, the first transistor is turned off by a control signal input to the gate of the first transistor, so that the signal potential is held in the gate of the second transistor. When one of a source and a drain of the second transistor is set to a first potential, the state between the source and the drain of the second transistor is detected, whereby the data is read out. | 07-26-2012 |
20120206325 | DISPLAY DEVICE - A display device includes a display panel and a shutter panel that is provided on the viewer side of the display panel and includes a first liquid crystal element and a second liquid crystal element adjacent to each other. In a first display state, a first light-shielding region and a first light-transmitting region are formed in the shutter panel by the first liquid crystal element, and light from the display panel is emitted through the first light-transmitting region. In a second display state, a second light-shielding region larger than the first light-shielding region and a second light-transmitting region smaller than the first light-transmitting region are formed in the shutter panel by the first liquid crystal element and the second liquid crystal element, and light from the display panel is emitted through the second light-transmitting region. | 08-16-2012 |
20120206446 | DISPLAY DEVICE - A display device includes a display panel including a matrix of pixel regions, and a shutter panel including a matrix of optical shutter regions each of which state is selected from a light-transmitting state and a light-shielding state. In a first display state, the display panel performs display regarding one pixel region as a display element unit, and each of the plurality of optical shutter regions in the shutter panel is brought into a light-transmitting state or a light-shielding state. In a second display state, the display panel performs display regarding at least two pixel regions as the display element unit, and each of the plurality of optical shutter regions in the shutter panel is brought into a light-transmitting state or a light-shielding state. As a result, the range of distance with which 3D images can be displayed can differ between the first display state and the second display state. | 08-16-2012 |
20120206503 | DISPLAY DEVICE - A display device capable of displaying both a 3D image and a 2D image is provided. The display device includes a plurality of optical filter regions where light-blocking panels for producing binocular disparity are arranged in matrix. The light-blocking panel can select whether to transmit light emitted from a display panel in each of the plurality of optical filter regions. Thus, in the display device, some regions where binocular disparity is produced can be provided. Consequently, the display device can display both a 3D image and a 2D image. | 08-16-2012 |
20120218238 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - A display device includes a current source, a first transistor, a second transistor, and a light-emitting element. One electrode of the light-emitting element is electrically connected to the current source through a source and a drain of the first transistor. The same electrode of the light-emitting element is also electrically connected to a wiring through a source and a drain of the second transistor. | 08-30-2012 |
20120218325 | DISPLAY DEVICE - To extend the range of distance (between a display screen and the eye of a viewer) with which the viewer can see 3D images with the naked eye and to reduce power consumption. A parallax barrier in a shutter panel is controlled to be arranged optimally in accordance with the distance between the viewer and a display panel. Specifically, an optimal parallax barrier is formed as appropriate by selectively switching a light-transmitting state and a light-shielding state of a plurality of optical shutter regions and a display element unit of pixels depending on a retention state. The retention state is realized in such a manner that at least one of electrodes between which a liquid crystal layer is sandwiched is connected to a transistor including a semiconductor layer containing an oxide semiconductor and the transistor is turned off. | 08-30-2012 |
20120229725 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A display device includes a main body, a support stand, and a display portion. The display portion includes a pixel having a TFT and a capacitor. The capacitor includes a capacitor electrode on an insulating surface, an insulating film on the capacitor electrode, and a pixel electrode of the TFT on the insulating film. | 09-13-2012 |
20120243786 | IMAGE PROCESSING METHOD AND DISPLAY DEVICE - An image processing method to obtain a high sense of depth or high stereoscopic effect for an image and a display device utilizing the method are provided. Image data of an image is separated into image data of a plurality of objects and a background. A feature amount is obtained from the image data of each object, so that the objects are identified. The relative distance between viewer's eye and any of the objects is determined by the data of the sizes of the objects in the image and the sizes of the objects stored in the database. The image data of each object is processed so that an object with a shorter relative distance is enlarged. The image data of each object after image processing is combined with the image data of the background, so that a sense of depth or stereoscopic effect of an image is increased. | 09-27-2012 |
20120248435 | LIGHT-EMITTING DEVICE - A light-emitting device according to one embodiment of the present invention includes a light-emitting element, a first transistor whose source is electrically connected to an anode of the light-emitting element, a second transistor which controls whether an image signal is input to a gate of the first transistor, a third transistor which controls electrical connection and disconnection between the gate and a drain of the first transistor, a fourth transistor which controls whether a first power supply potential is supplied to the drain of the first transistor, a fifth transistor which controls whether a second power supply potential is supplied to the anode of the light-emitting element, a first capacitor which holds a voltage between the gate and the source of the first transistor, and a second capacitor electrically connected in series with the first capacitor and electrically connected in series with the light-emitting element. | 10-04-2012 |
20120268164 | PROGRAMMABLE LSI - A low-power programmable LSI that can perform dynamic configuration is provided. The programmable LSI includes a plurality of logic elements. The plurality of logic elements each include a configuration memory. Each of the plurality of logic elements performs different arithmetic processing and changes an electrical connection between the logic elements, in accordance with the configuration data stored in the configuration memory. The configuration memory includes a set of a volatile storage circuit and a nonvolatile storage circuit. The nonvolatile storage circuit includes a transistor whose channel is formed in an oxide semiconductor layer and a capacitor whose one of a pair of electrodes is electrically connected to a node that is set in a floating state when the transistor is turned off. | 10-25-2012 |
20120274542 | DISPLAY DEVICE - An object is to provide a display device on which 3D images can be perceived from a large area. A parallax barrier panel includes a first substrate provided with a plurality of light-blocking layers and a plurality of light-transmitting layers, and a second substrate. The light-blocking layers and the light-transmitting layers are alternately provided in contact with one surface of the first substrate and are interposed between the first substrate and the second substrate. The refraction index of each of the light-transmitting layers is different from the refraction index of the first substrate or the refraction index of the second substrate. The parallax barrier panel is stacked with a display panel including a plurality of pairs of a pixel for the right eye and a pixel for the left eye. | 11-01-2012 |
20120280725 | DRIVER CIRCUIT, DISPLAY DEVICE INCLUDING THE DRIVER CIRCUIT, AND ELECTRONIC APPLIANCE INCLUDING THE DISPLAY DEVICE - An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a first transistor and a second transistor, and a switch including a third transistor. The first to third transistors each include a semiconductor layer of an oxide semiconductor and are depletion-mode transistors. An amplitude voltage of clock signals for driving the third transistor is higher than a power supply voltage for driving the inverter circuit. | 11-08-2012 |
20120286262 | DISPLAY DEVICE AND ELECTRONIC DEVICE - An object is, in a structure where switch circuits in a signal line driver circuit is placed over the same substrate as a pixel portion, to reduce the size of transistors in the switch circuits and to reduce load in the circuits during charging and discharging of signal lines due to the supply of data. A display device is provided which includes a pixel portion receiving a video signal, and a signal line driver circuit including a switch circuit portion configured to control output of the video signal to the pixel portion. The switch circuit portion includes a transistor over an insulating substrate. The transistor has a field-effect mobility of at least 80 cm | 11-15-2012 |
20120287025 | ACTIVE MATRIX DISPLAY DEVICE AND DRIVING METHOD THEREOF - In a circuit in FIG. | 11-15-2012 |
20120287027 | EL DISPLAY DEVICE AND ELECTRONIC DEVICE - Provided is an EL display device which is provided with a power supply line driver circuit including a transistor having capability in supplying a large amount of current over an insulating substrate where a pixel portion is formed. An active matrix EL display device includes a plurality of pixels, a plurality of signal lines, a plurality of scan lines, and a plurality of power supply lines over an insulating substrate; a transistor formed using an oxide semiconductor with a field-effect mobility of at least higher than or equal to 80 cm | 11-15-2012 |
20120287177 | METHOD FOR DRIVING LIGHT-EMITTING DEVICE - A method for driving a light-emitting device comprises steps of: supplying a first potential to a drain of a transistor and a second potential being lower than the first potential to a cathode of a light-emitting element; supplying a third potential which is lower than a potential obtained by adding the threshold voltage of the transistor, the threshold voltage of the light-emitting element, and the second potential to a gate electrode of the transistor, and a fourth potential being lower than a potential obtained by subtracting the threshold voltage of the transistor from the third potential to the source of the transistor; stopping supply of the fourth potential to the source of the transistor; and supplying a potential of an image signal to the gate electrode of the transistor. | 11-15-2012 |
20120287359 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes a display panel and a shutter panel provided on a viewable side of the display panel. The shutter panel includes a plurality of first transparent electrodes provided over a first substrate, a plurality of second transparent electrodes provided over a second substrate, and a liquid crystal provided between the first substrate and the second substrate. The first transparent electrodes and the second transparent electrodes are arranged in striped patterns in a first direction and are both spaced in a second direction intersecting the first direction. Potentials of the first transparent electrodes and potentials of the second transparent electrodes are controlled to adjust an alignment of the liquid crystal, so that the shutter panel is provided with light-shielding regions arranged in a striped pattern in the first direction and spaced in the second direction and light-transmitting regions each of which is provided between the light-shielding regions. | 11-15-2012 |
20120287584 | WIRELESS SENSOR DEVICE - A wireless sensor device capable of constant operation without replacement of batteries. The wireless sensor device is equipped with a rechargeable battery and the battery is recharged wirelessly. Radio waves received at an antenna circuit are converted into electrical energy and stored in the battery. A sensor circuit operates with the electrical energy stored in the battery, and acquires information. Then, a signal containing the information acquired is converted into radio waves at the antenna circuit, whereby the information can be read out wirelessly. | 11-15-2012 |
20120299003 | ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE - An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×10 | 11-29-2012 |
20120305912 | DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor. | 12-06-2012 |
20120306728 | Display Device, Driving Method Of The Same, and Electronic Device - A display device suppresses the influence of variations of a current value supplied to a light emitting element caused by a temperature change. In particular, luminance variations caused by a temperature gradient in a pixel portion due to a heat generated from a source signal line driver circuit are suppressed. In a display device including a gate signal line provided in a row direction, a source signal line provided in a column direction, and a light emitting element in a pixel portion arranged in matrix corresponding to the gate signal line and the source signal line, a column of monitor elements is provided beside the pixel portion, a constant current is supplied to each row of the monitor elements, and a voltage generated at the monitor element for each row of pixels is applied to light emitting elements of the corresponding row. | 12-06-2012 |
20120311365 | PROGRAMMABLE LOGIC DEVICE - An object is to provide a programmable logic device configured to keep a connection state of logic circuits even while power supply voltage is stopped. The programmable logic device includes arithmetic circuits each of whose logic state can be changed; a configuration changing circuit changing the logic states of the arithmetic circuits; a power supply control circuit controlling supply of power supply voltage to the arithmetic circuits; a state memory circuit storing data on the logic states and data on states of the power supply voltage of the arithmetic circuits; and an arithmetic state control circuit controlling the configuration changing circuit and the power supply control circuit in accordance with the data stored in the state memory circuit. A transistor in which a channel formation region is formed in an oxide semiconductor layer is provided between the configuration changing circuit and each of the arithmetic circuits. | 12-06-2012 |
20120314151 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate electrode and a region which does not overlap with the gate electrode is provided in one TFT. Another feature of the present invention is that gate electrode comprises a first conductive layer and a second conductive layer and portion of the gate wiring has a clad structure comprising the first conductive layer and the second conductive layer with a low resistance layer interposed therebetween | 12-13-2012 |
20120320011 | DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - To suppress the increase in power consumption and suppress the decrease in display quality of a display device capable of displaying 3D images, whether each of optical shutters arranged in a matrix is brought into a light-transmitting state or a light-blocking state is selected in accordance with a voltage between a pair of electrodes (a first electrode and a second electrode) of the optical shutter. By control of the voltage between the pair of electrodes, a parallax barrier can be selectively formed in an intended region. Thus, a parallax barrier can be formed only in a region where 3D images are to be displayed. | 12-20-2012 |
20120326951 | Display Device - To provide a display device with little signal delay and a display device that can operate with low power consumption, parasitic capacitance between a common wiring that applies a common potential to a plurality of pixels and signal lines that input signals for driving the pixels is avoided. Specifically, the common wiring is routed outwardly with respect to an external input terminal to which a signal is input from the, outside, to avoid intersections of the signal lines and the common wiring. Thus, parasitic capacitance between the common wiring and the signal lines is avoided, so that the display device can operate at high speed with low power consumption. | 12-27-2012 |
20130002312 | DRIVER CIRCUIT, METHOD OF MANUFACTURING THE DRIVER CIRCUIT, AND DISPLAY DEVICE INCLUDING THE DRIVER CIRCUIT - Provided are a driver circuit which suppresses damage of a semiconductor element due to ESD in a manufacturing process, a method of manufacturing the driver circuit. Further provided are a driver circuit provided with a protection circuit with low leakage current, and a method of manufacturing the driver circuit. By providing a protection circuit in a driver circuit to be electrically connected to a semiconductor element in the driver circuit, and by forming, at the same time, a transistor which serves as the semiconductor element in the driver circuit and a transistor included in the protection circuit in the driver circuit, damage of the semiconductor element due to ESD is suppressed in the process of manufacturing the driver circuit. Further, by using an oxide semiconductor film for the transistor included in the protection circuit in the driver circuit, leakage current in the protection circuit is reduced. | 01-03-2013 |
20130009909 | Display Device - A display device with high accuracy in object detection is provided. The display device includes a light-detection touch sensor, a capacitive touch sensor, and an illuminance sensor configured to detect the illuminance of external light. The information about the illuminance detected by the illuminance sensor is used to choose either the light-detection touch sensor or the capacitive touch sensor for imaging. That is, an appropriate touch sensor is chosen from the two kinds of touch sensors. Accordingly, the object detection accuracy can be prevented from decreasing due to the influence of external light. | 01-10-2013 |
20130016143 | DISPLAY DEVICE AND METHOD FOR DRIVING THE DISPLAY DEVICEAANM KOYAMA; JunAACI SagamiharaAACO JPAAGP KOYAMA; Jun Sagamihara JPAANM MIYAKE; HiroyukiAACI AtsugiAACO JPAAGP MIYAKE; Hiroyuki Atsugi JPAANM TOYOTAKA; KouheiAACI AtsugiAACO JPAAGP TOYOTAKA; Kouhei Atsugi JPAANM HARADA; HikaruAACI KariyaAACO JPAAGP HARADA; Hikaru Kariya JPAANM KANEYASU; MakotoAACI HadanoAACO JPAAGP KANEYASU; Makoto Hadano JP - An object is to suppress crosstalk. A display device includes a pixel portion which includes a first display region, a second display region, and a non-light-emitting region provided between the first display region and the second display region; and a parallax barrier which includes a first light control region, a second light control region, and a light-transmitting region provided between the first light control region and the second light control region. The first light control region overlaps with the first display region, the second light control region overlaps with the second display region, and the center of the width of the light-transmitting region overlaps with the non-light-emitting region. | 01-17-2013 |
20130021239 | DISPLAY DEVICE - A display device includes a display panel including a plurality of pixels, a shutter panel including a driver circuit, a liquid crystal, and light-transmitting electrodes provided in a striped manner, and a positional data detector configured to detect a positional data of a viewer. The shutter panel is provided over a display surface side of the display panel, a width of one of the light-transmitting electrodes in the shutter panel is smaller than that of one of the plurality of pixels, and the driver circuit in the shutter panel is configured to selectively output signals for forming a parallax barrier to the light-transmitting electrodes. The parallax barrier is capable of changing its shape in accordance with the detected positional data. | 01-24-2013 |
20130033925 | Semiconductor Device - An object is to provide a semiconductor device having a novel structure. A first wiring; a second wiring; a third wiring, a fourth wiring; a first transistor including a first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second gate electrode, a second source electrode, and a second drain electrode are included. The first transistor is provided over a substrate including a semiconductor material and a second transistor includes an oxide semiconductor layer. | 02-07-2013 |
20130043478 | Display Device and Controlling Method Thereof - A conventional setting voltage was a value with an estimated margin of a characteristic change of a light emitting element. Therefore, a voltage between the source and drain of a driver transistor V | 02-21-2013 |
20130049133 | SEMICONDUCTOR DEVICE - A semiconductor device that includes transistors having the same polarity consumes less power and can prevent a decrease in amplitude of a potential output. The semiconductor device includes a first wiring having a first potential, a second wiring having a second potential, a third wiring having a third potential, a first transistor and a second transistor having the same polarity, and a plurality of third transistors for selecting supply of the first potential to gates of the first transistor and the second transistor or supply of the third potential to the gates of the first transistor and the second transistor and for selecting whether to supply one potential to drain terminals of the first transistor and the second transistor. A source terminal of the first transistor is connected to the second wiring, and a source terminal of the second transistor is connected to the third wiring. | 02-28-2013 |
20130049806 | SEMICONDUCTOR DEVICE - A semiconductor device is provided, which includes a switch having a first transistor and a logic circuit having an output terminal. The logic circuit includes a bootstrap circuit having at least one second transistor. The bootstrap circuit is electrically connected to the output terminal. The first transistor and the second transistor have the same conductivity type. Each of the first transistor and the second transistor includes an oxide semiconductor layer including a channel formation region and a pair of gate electrodes with the oxide semiconductor layer provided therebetween. | 02-28-2013 |
20130056763 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device that can realize a function of a thyristor without complication of the process. A semiconductor device including a memory circuit that stores a predetermined potential by reset operation and initialization operation is provided with a circuit that rewrite data in the memory circuit in accordance with supply of a trigger signal. The semiconductor device has a structure in which a current flowing through the semiconductor device is supplied to a load by rewriting data in the memory circuit, and thus can function as a thyristor. | 03-07-2013 |
20130057315 | Non-Volatile Latch Circuit And Logic Circuit, And Semiconductor Device Using The Same - A novel non-volatile latch circuit and a semiconductor device using the non-volatile latch circuit are provided. The latch circuit has a loop structure in which an output of a first element is electrically connected to an input of a second element and an output of the second element is electrically connected to an input of the first element through a second transistor. A transistor using an oxide semiconductor as a semiconductor material of a channel formation region is used as a switching element, and a capacitor is provided to be electrically connected to a source electrode or a drain electrode of the transistor, whereby data of the latch circuit can be retained, and a non-volatile latch circuit can thus be formed. | 03-07-2013 |
20130077385 | SEMICONDUCTOR DEVICE - An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an oxide semiconductor in their channel formation region and transistors including non-oxide semiconductor in their channel formation region. An application of the present invention is to realize substantially non-volatile semiconductor memories which do not require specific erasing operation and do not suffer from damages due to repeated writing operation. Furthermore, the semiconductor device is well adapted to store multivalued data. Manufacturing methods, application circuits and driving/reading methods are explained in details in the description. | 03-28-2013 |
20130094173 | Display Device And An Electronic Apparatus Using The Same - In a conventional display device comprising a sub-display, the display device is increased in thickness and in the number of components as the number of displays is increased. In the present invention, a dual emission display device is used so that either surface of a display is used as a main display or a sub-display. Accordingly, the display device can be reduced in thickness and in the number of components. Further, mechanical reliability can be enhanced when the invention is applied to a tablet PC, a video camera and the like. | 04-18-2013 |
20130113044 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed. | 05-09-2013 |
20130119378 | SEMICONDUCTOR DEVICE - The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current. | 05-16-2013 |
20130119380 | SEMICONDUCTOR DEVICE - A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10 | 05-16-2013 |
20130120701 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - The display device includes a gate electrode, a gate insulating film provided over the gate electrode, a semiconductor film provided over the gate insulating film to overlap with the gate electrode, an island-shaped first insulating film provided over the semiconductor film to overlap with the gate electrode, a first conductive film provided over the semiconductor film, a pair of second conductive films which is provided over the semiconductor film and between which the first insulating film is sandwiched, and a second insulating film provided over the first insulating film, the first conductive film, and the pair of second conductive films. In the second insulating film and the semiconductor film, an opening portion which is positioned between the first conductive film and the one or the other of the pair of second conductive films is provided. | 05-16-2013 |
20130120702 | LIQUID CRYSTAL DISPLAY DEVICE, EL DISPLAY DEVICE, AND MANUFACTURING METHOD THEREOF - A display device is manufactured with five photolithography steps: a step of forming a gate electrode, a step of forming a protective layer for reducing damage due to an etching step or the like, a step of forming a source electrode and a drain electrode, a step of forming a contact hole, and a step of forming a pixel electrode. The display device includes a groove portion which is formed in the step of forming the contact hole and separates the semiconductor layer. | 05-16-2013 |
20130121456 | DRIVER CIRCUIT, DISPLAY DEVICE INCLUDING THE DRIVER CIRCUIT, AND ELECTRONIC APPLIANCE INCLUDING THE DISPLAY DEVICE - An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a first transistor and a second transistor, and a switch including a third transistor. The first to third transistors each include a semiconductor layer of an oxide semiconductor and are depletion-mode transistors. An amplitude voltage of clock signals for driving the third transistor is higher than a power supply voltage for driving the inverter circuit. | 05-16-2013 |
20130122963 | Analog Circuit And Semiconductor Device - An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×10 | 05-16-2013 |
20130127497 | MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - An object is to provide a memory device which does not need a complex manufacturing process and whose power consumption can be suppressed, and a semiconductor device including the memory device. A solution is to provide a capacitor which holds data and a switching element which controls storing and releasing charge in the capacitor in a memory element. In the memory element, a phase-inversion element such as an inverter or a clocked inverter includes the phase of an input signal is inverted and the signal is output. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. In the case where application of a power supply voltage to the phase-inversion element is stopped, the data is stored in the capacitor, so that the data is held in the capacitor even when the application of the power supply voltage to the phase-inversion element is stopped. | 05-23-2013 |
20130134414 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A step for forming an island-shaped semiconductor layer of a semiconductor device used in a display device is omitted in order to manufacture the semiconductor device with high productivity and low cost. The semiconductor device is manufactured through four photolithography processes: four steps for forming a gate electrode, for forming a source electrode and a drain electrode, for forming a contact hole, and for forming a pixel electrode. In the step for forming the contact hole, a groove portion in which a semiconductor layer is removed is formed, whereby formation of a parasitic transistor is prevented. An oxide semiconductor is used as a material of the semiconductor layer in which a channel is formed, and an oxide semiconductor having a higher insulating property than the semiconductor layer is provided over the semiconductor layer. | 05-30-2013 |
20130134416 | SEMICONDUCTOR DISPLAY DEVICE - In the case where a still image is displayed on a pixel portion having a pixel, for example, a driver circuit for controlling writing of an image signal having image data to the pixel portion stops by stopping supply of power supply voltage to the driver circuit, and writing of an image signal to the pixel portion is stopped. After the driver circuit stops, supply of power supply voltage to a panel controller for controlling the operation of the driver circuit and an image memory for storing the image data is stopped, and supply of power supply voltage to a CPU for collectively controlling the operation of the panel controller, the image memory, and a power supply controller for controlling supply of power supply voltage to a variety of circuits in a semiconductor display device is stopped. | 05-30-2013 |
20130135185 | DRIVER CIRCUIT FOR DISPLAY DEVICE AND DISPLAY DEVICE INCLUDING THE DRIVER CIRCUIT - A display device driver circuit in which a lookup table can be written into a memory circuit within a retrace period even when the lookup table is constantly reconstructed in accordance with a change in the external environment and stored in the memory circuit, and data of the lookup table can be held even if supply of power supply voltage stops. In a driver circuit for a display device, a memory circuit including a transistor having a semiconductor layer containing an oxide semiconductor is used as a memory circuit that stores a lookup table for correcting image signals in accordance with a change in the external environment. | 05-30-2013 |
20130140558 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device functioning as a multivalued memory device including: memory cells connected in series; a driver circuit selecting a memory cell and driving a second signal line and a word line; a driver circuit selecting any of writing potentials and outputting it to a first signal line; a reading circuit comparing a potential of a bit line and a reference potential; and a potential generating circuit generating the writing potential and the reference potential. One of the memory cells includes: a first transistor connected to the bit line and a source line; a second transistor connected to the first and second signal line; and a third transistor connected to the word line, bit line, and source line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor is connected to one of source and drain electrodes of the second transistor. | 06-06-2013 |
20130147519 | LOGIC CIRCUIT - An object is to apply a transistor using an oxide semiconductor to a logic circuit including an enhancement transistor. The logic circuit includes a depletion transistor | 06-13-2013 |
20130147691 | DRIVING CIRCUIT OF A SEMICONDUCTOR DISPLAY DEVICE AND THE SEMICONDUCTOR DISPLAY DEVICE - There are provided a driving circuit of a semiconductor display device which can obtain an excellent picture without picture blur (display unevenness) and with high fineness/high resolution, and the semiconductor display device. A buffer circuit used in the driving circuit of the semiconductor display device is constituted by a plurality of TFTs each having a small channel width, and a plurality of such buffer circuits are connected in parallel with each other. | 06-13-2013 |
20130153895 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon. | 06-20-2013 |
20130161609 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The number of manufacturing steps is reduced to provide a semiconductor device with high productivity and low cost. A semiconductor device with low power consumption and high reliability is provided. A photolithography process for forming an island-shaped semiconductor layer is omitted, and a semiconductor device is manufactured through at least four photolithography processes: a step for forming a gate electrode (including a wiring or the like formed from the same layer), a step for forming a source electrode and a drain electrode (including a wiring or the like formed from the same layer), a step for forming a contact hole, and a step for forming a pixel electrode. In the step for forming the contact hole, a groove portion is formed, whereby formation of a parasitic transistor is prevented. The groove portion overlaps with the wiring with an insulating layer provided therebetween. | 06-27-2013 |
20130161713 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device which includes a memory cell including two or more sub memory cells is provided. The sub memory cells each including a word line, a bit line, a first capacitor, a second capacitor, and a transistor. In the semiconductor device, the sub memory cells are stacked in the memory cell; a first gate and a second gate are formed with a semiconductor film provided therebetween in the transistor; the first gate and the second gate are connected to the word line; one of a source and a drain of the transistor is connected to the bit line; the other of the source and the drain of the transistor is connected to the first capacitor and the second capacitor; and the first gate and the second gate of the transistor in each sub memory cell overlap with each other and are connected to each other. | 06-27-2013 |
20130175524 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a semiconductor device with a novel structure. A semiconductor device includes a first transistor, which includes a channel formation region provided in a substrate including a semiconductor material, impurity regions, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode, and a second transistor, which includes an oxide semiconductor layer over the substrate including the semiconductor material, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode. The second source electrode and the second drain electrode include an oxide region formed by oxidizing a side surface thereof, and at least one of the first gate electrode, the first source electrode, and the first drain electrode is electrically connected to at least one of the second gate electrode, the second source electrode, and the second drain electrode. | 07-11-2013 |
20130181854 | CIRCUIT, SENSOR CIRCUIT, AND SEMICONDUCTOR DEVICE USING THE SENSOR CIRCUIT - A sensor circuit for obtaining physical quantities with a small margin of error even when the temperature varies is provided. The sensor circuit includes a sensor, a sampling circuit for obtaining a voltage value or a current value of a signal output from the sensor during a predetermined period and holding the value, and an analog-to-digital converter circuit for converting the held analog voltage value or current value into a digital value. The sampling circuit includes a switch for obtaining the voltage value or the current value and holding the value. The switch includes a transistor including an oxide semiconductor in a channel formation region. | 07-18-2013 |
20130191673 | SEMICONDUCTOR DEVICE - To individually control supply of the power supply voltage to circuits, a semiconductor device includes a CPU, a memory that reads and writes data used in arithmetic operation of the CPU, a signal processing circuit that generates an output signal by converting a data signal generated by the arithmetic operation of the CPU, a first power supply control switch that controls supply of the power supply voltage to the CPU, a second power supply control switch that controls supply of the power supply voltage to the memory, a third power supply control switch that controls supply of the power supply voltage to the signal processing circuit, and a controller that at least has a function of controlling the first to third power supply control switches individually in accordance with an input signal and instruction signals input from the CPU and the signal processing circuit. | 07-25-2013 |
20130193434 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized. | 08-01-2013 |
20130193435 | SEMICONDUCTOR DEVICE - An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized. | 08-01-2013 |
20130193916 | SEMICONDUCTOR DEVICE AND IC LABEL, IC TAG, AND IC CARD HAVING THE SAME - The present invention provides a power supply circuit provided with a battery as a power source for supplying power to an RFID, and the battery of the power supply circuit is charged with a wireless signal. Then, a switching circuit is provided in the power supply circuit that supplies power to a signal control circuit which transmits and receives individual information to and from the outside to intermittently control supply of power to the signal control circuit by a signal from a low-frequency signal generation circuit. | 08-01-2013 |
20130200366 | SEMICONDUCTOR DEVICE - To provide a highly reliable semiconductor device in which a transistor including an oxide semiconductor film has stable electric characteristics. The semiconductor device includes a gate electrode layer over a substrate, a gate insulating film over the gate electrode layer, an oxide semiconductor film over the gate insulating film, a drain electrode layer which is over the oxide semiconductor film so as to overlap with the gate electrode layer, and a source electrode layer provided so as to cover part of an outer edge portion of the oxide semiconductor film. An outer edge portion of the drain electrode layer is on an inner side than an outer edge portion of the gate electrode layer. | 08-08-2013 |
20130200367 | SEMICONDUCTOR DEVICE - An object of one embodiment of the present invention is to provide a highly reliable semiconductor device by giving stable electric characteristics to a transistor including an oxide semiconductor film. The semiconductor device includes a gate electrode layer over a substrate, a gate insulating film over the gate electrode layer, an oxide semiconductor film over the gate insulating film, a drain electrode layer provided over the oxide semiconductor film to overlap with the gate electrode layer, and a source electrode layer provided to cover an outer edge portion of the oxide semiconductor film. The outer edge portion of the drain electrode layer is positioned on the inner side than the outer edge portion of the gate electrode layer. | 08-08-2013 |
20130200369 | SEMICONDUCTOR DEVICE - The semiconductor device includes a source line, a bit line, a first signal line, a second signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line, a second driver circuit electrically connected to the first signal line, a third driver circuit electrically connected to the second signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material. | 08-08-2013 |
20130200370 | LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE - A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×10 | 08-08-2013 |
20130201752 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device in which stored data can be retained even when power is not supplied, and there is no limitation on the number of write cycles. The semiconductor device includes a source line, a bit line, a first signal line, a second signal line, a word line, a memory cell connected between the source line and the bit line, a first driver circuit electrically connected to the bit line, a second driver circuit electrically connected to the first signal line, a third driver circuit electrically connected to the second signal line, and a fourth driver circuit electrically connected to the word line and the source line. The first transistor is formed using a semiconductor material other than an oxide semiconductor. The second transistor is formed using an oxide semiconductor material. | 08-08-2013 |
20130207565 | ELECTROOPTICAL DEVICE - In an electrooptical device including an electrooptical modulating layer between a first substrate | 08-15-2013 |
20130215661 | MEMORY CIRCUIT AND SEMICONDUCTOR DEVICE - Included is a first transistor for controlling rewriting and reading of a first data, a second transistor for controlling rewriting and reading of a second data, a first inverter including an input terminal for the first data, a second inverter including an input terminal for the second data, a third transistor between an output terminal of the second inverter and the input terminal of the first inverter, a fourth transistors between the output of the first inverter and the input terminal of the second inverter, a fifth transistor for controlling rewriting and reading of the first data in the first capacitor, and a sixth transistor for controlling rewriting and reading of the second data in a second capacitor. The first data and the second data are held in the first capacitor and the second capacitor even while power supply is cut off. | 08-22-2013 |
20130222033 | Nonvolatile Latch Circuit And Logic Circuit, And Semiconductor Device Using The Same - To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion for holding data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, an inverter electrically connected to a source electrode or a drain electrode of the transistor is included. With the transistor, data held in the latch portion can be written into a gate capacitor of the inverter or a capacitor which is separately provided. | 08-29-2013 |
20130223135 | SEMICONDUCTOR DEVICE - The memory device includes a first logic element which is supplied with a first power supply voltage, and inverts a polarity of a potential of an input terminal to output the potential with the inverted polarity from an output terminal, a second logic element which is supplied with a second power supply voltage supplied through a different path from the first power supply voltage, and inverts a polarity of a potential of an input terminal to output the potential with the inverted polarity from an output terminal, a first memory circuit connected to the input terminal of the first logic element, and a second memory circuit connected to the input terminal of the second logic element. The input terminal and the output terminal of the first logic element are connected to the output terminal and the input terminal of the second logic element, respectively. | 08-29-2013 |
20130229117 | DISPLAY DEVICE AND ELECTRONIC DEVICE - A display device capable of displaying a picture of vivid colors maintaining a good balance of colors and a good balance of light-emitting brightnesses of the EL elements. The widths of the detour wirings supplying current to the power source feed lines are increased for those EL elements into which a current of a large density flows. This constitution decreases the wiring resistances of the detour wirings, decreases the potential drop through the detour wirings, and suppresses the amount of electric power consumed by the detour wirings. | 09-05-2013 |
20130234757 | Nonvolatile Latch Circuit And Logic Circuit, And Semiconductor Device Using The Same - To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion configured to hold data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, a capacitor electrically connected to a source electrode or a drain electrode of the transistor is included. | 09-12-2013 |
20130235689 | SEMICONDUCTOR DEVICE - To provide a semiconductor device including a plurality of circuit blocks each of which is capable of performing power gating by setting off periods appropriate to temperatures of the respective circuit blocks. Specifically, the semiconductor device includes an arithmetic circuit, a memory circuit configured to hold data obtained by the arithmetic circuit, a power supply control switch configured to control supply of the power supply voltage to the arithmetic circuit, a temperature detection circuit configured to detect the temperature of the memory circuit and to estimate overhead from the temperature, and a controller configured to set a period during which supply of the power supply voltage is stopped in the case where a power consumption of the arithmetic circuit during the period is larger than the overhead period and to control the power supply control switch. | 09-12-2013 |
20130240873 | SEMICONDUCTOR DEVICE - To provide a semiconductor device with low power consumption in which a malfunction due to drop in voltage, delay of signal transmission, distortion of a signal waveform, and the like, which are caused by increase in wiring resistance, and decrease in reliability are prevented. A gate wiring is formed of a conductive layer containing copper, and a signal wiring formed of part of the same conductive layer as a source electrode and a drain electrode and a wiring formed of part of the same conductive layer as the gate wiring are electrically connected to each other in series or in parallel; thus, wiring resistance of the signal wiring is substantially decreased without an increase in width or thickness of the signal wiring. | 09-19-2013 |
20130241965 | DISPLAY DEVICE - Display defects of a display device are suppressed. The display device includes in each pixel, a light-emitting element, a driving transistor which supplies current to the light-emitting element, and transistors in each of which a channel is formed in an oxide semiconductor layer. A transistor which controls whether to electrically connect a gate and a source of the driving transistor provided in each pixel is provided. The above transistor and a transistor which controls electrical connection between the gate of the driving transistor and another node are transistors in each of which a channel is formed in an oxide semiconductor layer. Accordingly, charge stored in the node electrically connected to the gate of the driving transistor can be arbitrarily retained or released. Consequently, display defects of the display device can be suppressed. | 09-19-2013 |
20130242639 | MEMORY DEVICE AND DRIVING METHOD THEREOF - Even in a circuit which always needs power supply, with a structure in which power supply is stopped in a period which does not need power supply, power consumption at the time of writing data to a memory device included in the circuit is reduced. A volatile memory portion and a nonvolatile memory portion are provided in the memory device included in the circuit which always needs power supply. As a memory element for storing data stored in the volatile memory portion which is included in the nonvolatile memory portion, a variable resistance memory element whose resistance value can be varied depending on voltage applied between both end terminals thereof is used. | 09-19-2013 |
20130248892 | LIGHT-EMITTING DEVICE - A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high V | 09-26-2013 |
20130256657 | SEMICONDUCTOR DEVICE - An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor. | 10-03-2013 |
20130256771 | SEMICONDUCTOR DEVICE - The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material. | 10-03-2013 |
20130257354 | PROTECTIVE CIRCUIT, BATTERY CHARGER, AND POWER STORAGE DEVICE - A low-power protective circuit includes a detection unit that intermittently detects a voltage across a secondary battery; a battery management unit that includes a buffer memory device and a processor and determines, based on a value of the voltage, whether the secondary battery needs to be charged; a switch circuit that establishes or breaks electrical continuity between a host system and the secondary battery; a switch control unit that turns on or off the switch circuit in accordance with the judgment made by the battery management unit; a switch that controls supply of power supply voltage from the secondary battery to the battery management unit; and a power controller that intermittently stops supply of the power supply voltage to the battery management unit by turning off the switch. | 10-03-2013 |
20130264959 | Lighting Device - To provide a lighting device in which the luminance of an EL element is maintained even when the EL element deteriorates so that degradation of the lighting device is reduced, the lighting device includes a surface light source portion including an organic EL element, and a control circuit portion provided in a base portion. The control circuit portion counts a lighting time of the organic EL element and controls the luminance of the organic EL element in accordance with the lighting time. Accordingly, the lighting device in which the luminance of an EL element is maintained regardless of degradation of the EL element so that degradation of the lighting device is reduced can be provided. | 10-10-2013 |
20130278325 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE - The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor. | 10-24-2013 |
20130285470 | POWER SUPPLY CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A power supply circuit includes a first switch, a voltage regulator circuit connected to the first switch, and a control circuit for controlling the first switch. The control circuit includes a second switch, a third switch, and a voltage generation circuit. For controlling the first switch, first voltage output from the voltage generation circuit is applied to the first switch through the second switch, and second voltage output from the voltage generation circuit is applied to the first switch through the third switch. Power consumption of the power supply circuit can be reduced. | 10-31-2013 |
20130288619 | Semiconductor Device - An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5×10 | 10-31-2013 |
20130292671 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor having a novel structure. In the semiconductor device, a plurality of memory elements are connected in series and each of the plurality of memory elements includes first to third transistors thus forming a memory circuit. A source or a drain of a first transistor which includes an oxide semiconductor layer is in electrical contact with a gate of one of a second and a third transistor. The extremely low off current of a first transistor containing the oxide semiconductor layer allows storing, for long periods of time, electrical charges in the gate electrode of one of the second and the third transistor, whereby a substantially permanent memory effect can be obtained. The second and the third transistors which do not contain an oxide semiconductor layer allow high-speed operations when using the memory circuit. | 11-07-2013 |
20130292677 | SEMICONDUCTOR DEVICE - An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other. | 11-07-2013 |
20130294481 | TEMPERATURE SENSOR CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING TEMPERATURE SENSOR CIRCUIT - To provide a highly accurate temperature sensor circuit. The temperature sensor circuit includes a first constant current circuit; a first diode in which a first voltage reflecting the temperature of an object to be detected is generated between an anode and a cathode in accordance with a first current supplied from the first constant current circuit; a second constant current circuit; a second diode which includes an oxide semiconductor and in which a second voltage is generated between an anode and a cathode in accordance with a second current supplied from the second constant current circuit; and an amplifier circuit which amplifies a difference between the first voltage and the second voltage. | 11-07-2013 |
20130299825 | DISPLAY DEVICE HAVING AN OXIDE SEMICONDUCTOR TRANSISTOR - An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated. | 11-14-2013 |
20130299832 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate electrode and a region which does not overlap with the gate electrode is provided in one TFT. Another feature of the present invention is that gate electrode comprises a first conductive layer and a second conductive layer and portion of the gate wiring has a clad structure comprising the first conductive layer and the second conductive layer with a low resistance layer interposed therebetween | 11-14-2013 |
20130300462 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - To reduce power consumption, a semiconductor device includes a power source circuit for generating a power source potential, and a power supply control switch for controlling supply of the power source potential from the power source circuit to a back gate of a transistor, and the power supply control switch includes a control transistor for controlling conduction between the power source circuit and the back gate of the transistor by being turned on or off in accordance with a pulse signal that is input into a control terminal of the control transistor. The power source potential is intermittently supplied from the power source circuit to the back gate of the transistor, using the power supply control switch. | 11-14-2013 |
20130308073 | SEMICONDUCTOR DEVICE AND TOUCH PANEL - A touch panel whose power consumption can be reduced is provided, and an increase in the manufacturing cost of the touch panel is prevented. A photosensor which includes a light-receiving element including a non-single-crystal semiconductor layer between a pair of electrodes and a transistor including an oxide semiconductor layer in a channel formation region is provided. A touch panel which includes a plurality of pixels and the photosensor adjacent to at least one of the plurality of pixels is provided. Each of the plurality of pixels includes a pair of terminals. One of the pair of terminals is a reflective conductive film. Alternatively, each of the pair of terminals is a light-transmitting conductive film. | 11-21-2013 |
20130313578 | METHOD OF DRIVING A LIGHT EMITTING DEVICE - The present invention is characterized in that a transistor with its L/W set to 10 or larger is employed, and that |V | 11-28-2013 |
20130314346 | Electronic Book - An e-book reader in which destruction of a driver circuit at the time when a flexible panel is handled is inhibited. In addition, an e-book reader having a simplified structure. A plurality of flexible display panels each including a display portion in which display control is performed by a scan line driver circuit and a signal line driver circuit, and a binding portion fastening the plurality of display panels together are included. The signal line driver circuit is provided inside the binding portion, and the scan line driver circuit is provided at the edge of the display panel in a direction perpendicular to the binding portion. | 11-28-2013 |
20130315021 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE - A semiconductor device capable of simply performing power gating and a driving method thereof are provided. Power gating is started passively (automatically in the case of satisfying predetermined conditions). Specifically, the semiconductor device includes a transistor for selecting whether a power source voltage is supplied or not to a functional circuit. The power gating is started by turning off the transistor in the case where a voltage between a source and a drain is less than or equal to a predetermined voltage. Therefore, complicated operation is not needed at the time of starting power gating. Specifically, it is possible to start power gating without a process for predicting the timing at which an arithmetic operation performed in the functional circuit is terminated. As a result, it is possible to start power gating easily. | 11-28-2013 |
20130320333 | SEMICONDUCTOR DEVICE - In a display portion of a liquid crystal display device, the dead space corresponding to a unit pixel is reduced while the aperture ratio of the unit pixel is increased. One amplifier circuit portion is shared by a plurality of unit pixels, so that the area of the amplifier circuit portion corresponding to the unit pixel is reduced and the aperture ratio of the unit pixel is increased. In addition, when the amplifier circuit portion is shared by a larger number of unit pixels, a photosensor circuit corresponding to the unit pixel can be prevented from increasing in area even with an increase in photosensitivity. Furthermore, an increase in the aperture ratio of the unit pixel results in a reduction in the power consumption of a backlight in a liquid crystal display device. | 12-05-2013 |
20130321371 | LIGHT-EMITTING DEVICE - A light-emitting device capable of displaying an image using image signals having different polarities is provided. The light-emitting device includes a first circuit holding a first image signal having a first polarity, a second circuit holding a second image signal having a second polarity different from the first polarity and converting the second polarity of the held second image signal into the first polarity, and a light-emitting element whose luminance is sequentially determined in response to the first image signal held in the first circuit and the second image signal whose polarity is converted into the first polarity in the second circuit. | 12-05-2013 |
20130321995 | WIRELESS SENSOR DEVICE - A wireless sensor device capable of constant operation without replacement of batteries. The wireless sensor device is equipped with a rechargeable battery and the battery is recharged wirelessly. Radio waves received at an antenna circuit are converted into electrical energy and stored in the battery. A sensor circuit operates with the electrical energy stored in the battery, and acquires information. Then, a signal containing the information acquired is converted into radio waves at the antenna circuit, whereby the information can be read out wirelessly. | 12-05-2013 |
20130326244 | SEMICONDUCTOR DEVICE AND ALARM DEVICE - In the microcomputer in the alarm device, supply of power to a sensor portion or a CPU in a sensor is allowed or stopped by a power gate controlled by a power gate controller. In addition, a volatile memory portion and a nonvolatile memory portion are provided in the CPU, data of the volatile memory portion is stored in the nonvolatile memory portion before supply of power to the CPU is stopped, and the data of the nonvolatile memory portion is restored to the volatile memory portion after the supply of power to the CPU is resumed. Thus, during an interval between measurement periods, supply of power to the sensor portion and the CPU can be stopped, so that low power consumption can be achieved compared with the case where power is continuously supplied. | 12-05-2013 |
20130328731 | HEALTH DATA COLLECTING SYSTEM AND SEMICONDUCTOR DEVICE - Conventionally, people have to go to the place where a measurement instrument for health data is, to obtain health data and the like. Further, even when using a portable measurement instrument, people have to manage data by themselves, thus health data cannot be managed rapidly. According to the invention, a modulating circuit, a demodulating circuit, a logic circuit, a sensor circuit, and an antenna circuit are provided over an insulating substrate, thereby data sensed by the sensor circuit is transmitted wirelessly. According to the invention, health data on the living body (for example a human body) is sensed and can be rapidly detected. | 12-12-2013 |
20130341618 | Shift Register And Display Device And Driving Method Thereof - The power consumption of a shift register or a display device including the shift register is reduced. A clock signal is supplied to a shift register by a plurality of wirings, not by one wiring. Any one of the plurality of wirings supplies a clock signal in only part of the operation period of the shift register, not during the whole operation period of the shift register. Therefore, the capacity load caused with the supply of clock signals can be reduced, leading to reduction in power consumption of the shift register. | 12-26-2013 |
20140002516 | LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR DRIVING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME | 01-02-2014 |
20140015819 | Method for Driving Display Device and Display Device - Power consumption is sufficiently reduced even when a moving image is displayed at an increased driving frequency. A liquid crystal display device includes a signal generation circuit which outputs a polarity inversion signal that is generated in accordance with a count value obtained by counting cycles of a vertical synchronization signal and a source driver which switches a polarity of video signals input to a pixel in accordance with the polarity inversion signal. The polarity of the video signals is kept the same for m (m is greater than or equal to 2) or more frame periods by the polarity inversion signal. | 01-16-2014 |
20140015868 | Liquid Crystal Display Device and Method for Driving Liquid Crystal Display Device - A liquid crystal display device capable of consuming less power and a method for driving the liquid crystal display device are provided. The liquid crystal display device includes a pixel portion, a light supply portion sequentially supplying lights of a plurality of hues to the pixel portion, a counter counting the number of frame periods, a signal generator determining timing of inverting the polarity of an image signal every plural consecutive frame periods by using data on the number of frame periods counted by the counter, and a controller inverting the polarity of the image signal in accordance with the timing. A plurality of pixels are provided in the pixel portion. The image signal whose polarity is inverted every plural frame periods is input to the plurality of pixels. | 01-16-2014 |
20140028645 | Liquid Crystal Display Device - A liquid crystal display device includes a plurality of pixels each including a transistor and a liquid crystal element, and a driver circuit that inputs at least a video signal and a reset signal to the plurality of pixels. The driver circuit makes the polarity of the video signal inverted every m frames (m is a natural number of 2 or more) and inputs the inverted video signal to the pixel, and inputs the reset signal to the pixel while not inputting the video signal. | 01-30-2014 |
20140028659 | METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal material is prevented from being degraded by a voltage to control the shift of the threshold voltage which is applied to a back gate on the same conductive film as a pixel electrode. A liquid crystal display device includes a pixel circuit including a pixel electrode which applies an electric field to a liquid crystal layer; and a driver circuit including a transistor including a first gate and a second gate with a semiconductor film interposed therebetween. The transistor overlaps with the liquid crystal layer. A signal for controlling on/off of the transistor is input to the first gate. A signal for applying a first voltage is input to the second gate in a gate line selection period. A signal for alternately applying the first voltage and a second voltage is input to the second gate in a vertical retrace period. | 01-30-2014 |
20140034954 | SEMICONDUCTOR DEVICE - To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film. | 02-06-2014 |
20140042511 | SEMICONDUCTOR DEVICE - An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an oxide semiconductor in their channel formation region and transistors including non-oxide semiconductor in their channel formation region. An application of the present invention is to realize substantially non-volatile semiconductor memories which do not require specific erasing operation and do not suffer from damages due to repeated writing operation. Furthermore, the semiconductor device is well adapted to store multivalued data. Manufacturing methods, application circuits and driving/reading methods are explained in details in the description. | 02-13-2014 |
20140043068 | METHOD FOR DRIVING SEMICONDUCTOR DEVICE - To provide a driving method of a semiconductor device for reducing power consumption. In a method for driving a semiconductor device of one embodiment of the present invention, in a first period, a switch configured to control an electrical connection between a first wiring and a second wiring together with an n-channel transistor and a p-channel transistor is in an off state during a period in which the states of the n-channel transistor and the p-channel transistor gates of which are electrically connected to each other are switched between an on state and an off state. In a second period, the switch is set to be in an off state. The switch has a channel formation region in a semiconductor, band gap of which is higher than silicon and intrinsic carrier density of which is lower than silicon. | 02-13-2014 |
20140043093 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE - Direct-path current is reduced in a semiconductor device including CMOS circuits. One embodiment of the present invention is a method for driving a semiconductor device that includes a first CMOS circuit between power supply lines, a first transistor between the power supply lines, a second CMOS circuit between the power supply lines, and a second transistor between an output terminal of the first CMOS circuit and an input terminal of the second CMOS circuit. The first transistor and the second transistor each have lower off-state current than a transistor included in the first CMOS circuit. In a period during which the voltage of a first signal input to the first CMOS circuit is changed, a second signal is input to the first transistor and the second transistor to turn off the first transistor and the second transistor. | 02-13-2014 |
20140043094 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE - A semiconductor device includes a first transistor having a p-channel type, a second transistor having an n-channel type, and a third transistor with low off-state current between a high potential power supply line and a low potential power supply line, and a source terminal and a drain terminal of the third transistor are connected so that the third transistor is connected in series with the first transistor and the second transistor between the high potential power supply line and the low potential power supply line, and the third transistor is turned off when both the first transistor and the second transistor are in conducting states. | 02-13-2014 |
20140043315 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - Power consumed in a liquid crystal display device owing to inversion driving is reduced. A control circuit generates a polarity control signal whose potential level is switched at intervals of two or more frame periods. A data line driver circuit processes an image signal to generate a data signal. The data signal has a polarity corresponding to the potential level of the polarity control signal. The control circuit stops output of the image signal to the data line driver circuit when determining that there is no motion in data of the image signal. The control circuit controls a scan line driver circuit and the data line driver circuit, thereby performing, in response to a change in the potential level of the polarity control signal, rewriting of a display portion at least in one frame period during a period in which the output of the image signal is stopped. | 02-13-2014 |
20140056400 | DRIVER CIRCUIT, DISPLAY DEVICE INCLUDING THE DRIVER CIRCUIT, AND ELECTRONIC APPLIANCE INCLUDING THE DISPLAY DEVICE - An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a first transistor and a second transistor, and a switch including a third transistor. The first to third transistors each include a semiconductor layer of an oxide semiconductor and are depletion-mode transistors. An amplitude voltage of clock signals for driving the third transistor is higher than a power supply voltage for driving the inverter circuit. | 02-27-2014 |
20140061639 | LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE - To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10 | 03-06-2014 |
20140070209 | SEMICONDUCTOR DEVICE - A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant. | 03-13-2014 |
20140078132 | METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE - The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion. | 03-20-2014 |
20140078816 | SIGNAL PROCESSING CIRCUIT AND METHOD FOR DRIVING THE SAME - It is an object to provide a memory device for which a complex manufacturing process is not necessary and whose power consumption can be suppressed and a signal processing circuit including the memory device. In a memory element including a phase-inversion element by which the phase of an input signal is inverted and the signal is output such as an inverter or a clocked inverter, a capacitor which holds data and a switching element which controls storing and releasing of electric charge in the capacitor are provided. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. The memory element is applied to a memory device such as a register or a cache memory included in a signal processing circuit. | 03-20-2014 |
20140092681 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A semiconductor device includes: a source line; a bit line; a word line; a memory cell connected to the bit line and the word line; a driver circuit which drives a plurality of second signal lines and a plurality of word lines so as to select the memory cell specified by an address signal; a potential generating circuit which generates a writing potential and a plurality of reading potentials to supply to a writing circuit and a reading circuit; and a control circuit which selects one of a plurality of voltages for correction on a basis of results of the reading circuit comparing a potential of the bit line with the plurality of reading potentials. | 04-03-2014 |
20140097867 | SEMICONDUCTOR INTEGRATED CIRCUIT - To reduce power consumption of a semiconductor integrated circuit and to reduce delay of the operation in the semiconductor integrated circuit, a plurality of sequential circuits included in a storage circuit each include a transistor whose channel formation region is formed with an oxide semiconductor, and a capacitor whose one electrode is electrically connected to a node that is brought into a floating state when the transistor is turned off. By using an oxide semiconductor for the channel formation region of the transistor, the transistor with an extremely low off-state current (leakage current) can be realized. Thus, by turning off the transistor in a period during which power supply voltage is not supplied to the storage circuit, the potential in that period of the node to which one electrode of the capacitor is electrically connected can be kept constant or almost constant. Consequently, the above objects can be achieved. | 04-10-2014 |
20140110704 | SEMICONDUCTOR DEVICE - A semiconductor device includes an oxide layer, a source electrode layer in contact with the oxide layer, a first drain electrode layer in contact with the oxide layer, a second drain electrode layer in contact with the oxide layer, a gate insulating film in contact with the oxide layer, a first gate electrode layer overlapping with the source electrode layer and the first drain electrode layer and overlapping with a top surface of the oxide layer with the gate insulating film interposed therebetween, a second gate electrode layer overlapping with the source electrode layer and the second drain electrode layer and overlapping with the top surface of the oxide layer with the gate insulating film interposed therebetween, and a third gate electrode layer overlapping with a side surface of the oxide layer with the gate insulating film interposed therebetween. | 04-24-2014 |
20140117351 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE - The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor. | 05-01-2014 |
20140117932 | Moving Object, Wireless Power Feeding System, and Wireless Power Feeding Method - An object is to provide a moving object structure capable of reducing power loss caused when power is supplied from a power feeding device to a moving object by wireless communication. Another object is to provide a moving object structure capable of reducing the strength of a radio wave radiated to the surroundings. Before power is supplied to a moving object, a radio wave for alignment of antennas is output from a power feeding device. That is, radio waves are output from a power feeding device in two stages. In a first stage, a radio wave is output to align positions of antennas of the power feeding device and the moving object. In a second stage, a radio wave is output to supply power from the power feeding device to the moving object. | 05-01-2014 |
20140131704 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured. | 05-15-2014 |
20140145181 | DISPLAY DEVICE - To provide a novel display device with improved reliability. The display device includes an insulating layer between a first wiring and a second wiring. The insulating layer includes a first insulating layer and a second insulating layer overlapping with the first insulating layer and a region where a part of the second insulating layer is removed, and the region serves as a protection circuit. In addition, the first insulating layer and the second insulating layer are included in a region where the insulating layer overlaps with a semiconductor layer of a transistor, and a region where the first insulating layer and the second insulating layer are removed is included in a region where the first wiring and the second wiring are directly connected to each other. | 05-29-2014 |
20140145182 | DISPLAY DEVICE AND ELECTRONIC DEVICE - To provide a novel display device. The display device includes a pixel portion, a driver circuit portion that is provided outside the pixel portion, and a protection circuit that is electrically connected to one of or both the pixel portion and the driver circuit portion and includes a pair of electrodes. The pixel portion includes pixel electrodes arranged in a matrix and transistors electrically connected to the pixel electrodes. The transistor includes a first insulating layer containing nitrogen and silicon, and a second insulating layer containing oxygen, nitrogen, and silicon. The protection circuit includes the first insulating layer between the pair of electrodes. | 05-29-2014 |
20140146033 | DISPLAY DEVICE - To provide a novel display device without deterioration of display quality, the display device includes a display panel including a pixel portion that displays still images at a frame frequency of 30 Hz or less, a temperature sensing unit that senses the temperature of the display panel, a memory device that stores a correction table containing correction data, and a control circuit to which correction data selected from the correction table is input in accordance with an output of the temperature sensing unit. The pixel portion includes a plurality of pixels. Each of the pixels includes a transistor, a display element, and a capacitor. The control circuit outputs a voltage based on the correction data input to the control circuit, to the capacitor included in each of the pixels. | 05-29-2014 |
20140152630 | DISPLAY DEVICE - A novel highly reliable display device is provided. Further, a novel display device capable of displaying images with less flicker is provided. Further, a display device capable of displaying eye-friendly still images is provided. The display device includes a feedthrough correction circuit which corrects a primary image signal. The feedthrough correction circuit corrects the primary image signal to compensate predicted feedthrough. | 06-05-2014 |
20140160385 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region | 06-12-2014 |
20140167037 | MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - An object is to provide a memory device which does not need a complex manufacturing process and whose power consumption can be suppressed, and a semiconductor device including the memory device. A solution is to provide a capacitor which holds data and a switching element which controls storing and releasing charge in the capacitor in a memory element. In the memory element, a phase-inversion element such as an inverter or a clocked inverter includes the phase of an input signal is inverted and the signal is output. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. In the case where application of a power supply voltage to the phase-inversion element is stopped, the data is stored in the capacitor, so that the data is held in the capacitor even when the application of the power supply voltage to the phase-inversion element is stopped. | 06-19-2014 |
20140167041 | SEMICONDUCTOR DEVICE - An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation region on a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer, and a first source electrode and a first drain electrode which are electrically connected to the impurity region; and a second transistor which includes a second gate electrode over the substrate containing a semiconductor material, a second gate insulating layer over the second gate electrode, an oxide semiconductor layer over the second gate insulating layer, and a second source electrode and a second drain electrode which are electrically connected to the oxide semiconductor layer. | 06-19-2014 |
20140169072 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device having a novel structure. A first wiring; a second wiring; a third wiring, a fourth wiring; a first transistor including a first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second gate electrode, a second source electrode, and a second drain electrode are included. The first transistor is provided over a substrate including a semiconductor material and a second transistor includes an oxide semiconductor layer. | 06-19-2014 |
20140169100 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device functioning as a multivalued memory device including: memory cells connected in series; a driver circuit selecting a memory cell and driving a second signal line and a word line; a driver circuit selecting any of writing potentials and outputting it to a first signal line; a reading circuit comparing a potential of a bit line and a reference potential; and a potential generating circuit generating the writing potential and the reference potential. One of the memory cells includes: a first transistor connected to the bit line and a source line; a second transistor connected to the first and second signal line; and a third transistor connected to the word line, bit line, and source line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor is connected to one of source and drain electrodes of the second transistor. | 06-19-2014 |
20140173300 | POWER STORAGE SYSTEM AND POWER STORAGE DEVICE - The versatility of a power feeding device is improved. A power storage system includes a power storage device and a power feeding device. The power storage device includes data for identifying the power storage device. The power storage device includes a power storage unit, a switch that controls whether power from the power feeding device is supplied to the power storage unit, and a control circuit having a function of controlling a conduction state of the switch in accordance with a control signal input from the power feeding device. The power feeding device includes a signal generation circuit having a function of identifying the power storage device by the data input from the power storage device, generating the control signal corresponding to the identified power storage device, and outputting the generated control signal to the power storage device. | 06-19-2014 |
20140175431 | SEMICONDUCTOR DEVICE - A first transistor including a channel formation region, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode; a second transistor including an oxide semiconductor layer, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode; and a capacitor including one of the second source electrode and the second drain electrode, the second gate insulating layer, and an electrode provided to overlap with one of the second source electrode and the second drain electrode over the second gate insulating layer are provided. The first gate electrode and one of the second source electrode and the second drain electrode are electrically connected to each other. | 06-26-2014 |
20140177345 | SEMICONDUCTOR DEVICE - To provide a semiconductor device that has a novel structure and achieves a higher degree of convenience, the semiconductor device is configured to include a memory cell that stores binary data or multilevel data, and a reading circuit that reads the data stored in the memory cell and transfers the data to the outside. The reading circuit includes a first reading circuit for reading binary data and a second reading circuit for reading multilevel data. | 06-26-2014 |
20140184165 | POWER STORAGE DEVICE AND POWER STORAGE SYSTEM - To provide a power storage device, an operation condition of which is easily analyzed. A secondary battery includes a sensor that is a measurement unit, a microcontroller unit that is a determination unit, and a memory that is a memory unit. With the sensor, conditions of the secondary battery such as the remaining battery power, the voltage, the current, and the temperature are measured. The microcontroller unit performs arithmetic processing of the measurement results and determines the operation condition of the secondary battery. Further, the microcontroller unit stores the measurement result in the memory in accordance with the operation condition of the secondary battery. | 07-03-2014 |
20140184314 | SEMICONDUCTOR DEVICE - A coulomb counter is provided. In the coulomb counter, a current generated on charge or discharge of a secondary battery is converted into a voltage by a resistor, and the voltage is amplified by an amplifier circuit. The voltage amplified by the amplifier circuit is converted into a current by a voltage-current converter circuit, and the current is input to a cumulative addition circuit. The cumulative addition circuit charges a capacitor with the current input from the voltage-current converter circuit and generates a signal corresponding to a voltage generated across the capacitor. One terminal of the capacitor is connected to an output of the voltage-current converter circuit through a switch, and the other terminal of the capacitor is supplied with a constant potential. By on/off of the switch, supply of electric charge to the capacitor and storage of the electric charge can be controlled. | 07-03-2014 |
20140185170 | DRIVER CIRCUIT, METHOD OF MANUFACTURING THE DRIVER CIRCUIT, AND DISPLAY DEVICE INCLUDING THE DRIVER CIRCUIT - Provided are a driver circuit which suppresses damage of a semiconductor element due to ESD in a manufacturing process, a method of manufacturing the driver circuit. Further provided are a driver circuit provided with a protection circuit with low leakage current, and a method of manufacturing the driver circuit. By providing a protection circuit in a driver circuit to be electrically connected to a semiconductor element in the driver circuit, and by forming, at the same time, a transistor which serves as the semiconductor element in the driver circuit and a transistor included in the protection circuit in the driver circuit, damage of the semiconductor element due to ESD is suppressed in the process of manufacturing the driver circuit. Further, by using an oxide semiconductor film for the transistor included in the protection circuit in the driver circuit, leakage current in the protection circuit is reduced. | 07-03-2014 |
20140191934 | DRIVING CIRCUIT OF A SEMICONDUCTOR DISPLAY DEVICE AND THE SEMICONDUCTOR DISPLAY DEVICE - There are provided a driving circuit of a semiconductor display device which can obtain an excellent picture without picture blur (display unevenness) and with high fineness/high resolution, and the semiconductor display device. A buffer circuit used in the driving circuit of the semiconductor display device is constituted by a plurality of TFTs each having a small channel width, and a plurality of such buffer circuits are connected in parallel with each other. | 07-10-2014 |
20140203654 | SECONDARY BATTERY, SECONDARY BATTERY MODULE, METHOD FOR CHARGING THE SECONDARY BATTERY AND THE SECONDARY BATTERY MODULE, METHOD FOR DISCHARGING THE SECONDARY BATTERY AND THE SECONDARY BATTERY MODULE, METHOD FOR OPERATING THE SECONDARY BATTERY AND THE SECONDARY BATTERY MODULE, POWER STORAGE SYSTEM, AND METHOD FOR OPERATING THE POWER STORAGE SYSTEM - Degradation of a secondary battery or the like is prevented. A reduction in the capacity of a secondary battery or the like due to charging or discharging is prevented. A secondary battery module in which a secondary battery can be charged in a charging period into which short discharging periods are inserted is provided. A secondary battery module in which a plurality of secondary batteries are connected in parallel, and in a charging period of the secondary batteries, current due to short-time discharging of one secondary battery can be used for charging another secondary battery is provided. To carry out such operation, a secondary battery module includes a plurality of secondary batteries, a DC/DC converter, a switch, and a control circuit. | 07-24-2014 |
20140231882 | Wireless Processor, Wireless Memory, Information System, And Semiconductor Device - The invention provides a processor obtained by forming a high functional integrated circuit using a polycrystalline semiconductor over a substrate which is sensitive to heat, such as a plastic substrate or a plastic film substrate. Moreover, the invention provides a wireless processor, a wireless memory, and an information processing system thereof which transmit and receive power or signals wirelessly. According to the invention, an information processing system includes an element forming region including a transistor which has at least a channel forming region formed of a semiconductor film separated into islands with a thickness of 10 to 200 nm, and an antenna. The transistor is fixed on a flexible substrate. The wireless processor in which a high functional integrated circuit including the element forming region is formed and the semiconductor device transmit and receive data through the antenna. | 08-21-2014 |
20140232622 | Current Source Circuit, A Signal Line Driver Circuit and a Driving Method Thereof and a Light Emitting Device - A current source circuit includes current sources that are each configured to receive an external set signal and to control an output current value based on the external set signal. A changing over circuit that is electrically connected to the current sources and a set of output lines selects one of the current sources to be electrically connected to each of the output lines. | 08-21-2014 |
20140241054 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - To provide a semiconductor device with such a new structure that the effect of variation in transistor characteristics can be reduced to achieve less variation in the output voltage of a memory cell. A memory cell includes a source follower (common drain) transistor for reading data held in a gate. A voltage applied to a transistor generating a reference current flowing through the memory cell is determined so that a gate-source voltage is approximately equal to the threshold voltage of the transistor. With such a structure, data stored in the memory cell can be read as a voltage that is less influenced by variation of transistors such as the field-effect mobility and the size. | 08-28-2014 |
20140246667 | SENSOR CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING SENSOR CIRCUIT - A sensor circuit includes a transistor comprising an oxide semiconductor; a first circuit which supplies one of a first potential and a second potential; a first switch; a second switch; and a second circuit to which a current flowing between a source and a drain of the transistor is applied via the second switch when the first potential is applied to a gate of the transistor. The first potential is lower than a potential of the source or a potential of the drain of the transistor, and the second potential is higher than the potential of the source or the potential of the drain of the transistor. The first switch electrically connects the source and the drain of the transistor when the second potential is applied to the gate of the transistor, and electrically isolates them when the first potential is applied to the gate of the transistor. | 09-04-2014 |
20140246670 | SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF - A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. A reset transistor is omitted by initializing the signal charge storage portion to a cathode potential of a photoelectric conversion element portion in the solid-state image sensor. When a thin film transistor which includes an oxide semiconductor layer and has an off-state current of 1×10 | 09-04-2014 |
20140264327 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon. | 09-18-2014 |
20140266115 | VOLTAGE REGULATOR CIRCUIT - A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode. | 09-18-2014 |
20140285414 | METHOD FOR DRIVING DISPLAY DEVICE - A method for driving a display device in which characteristics of a transistor including an oxide semiconductor can approximately be recovered to characteristics before deterioration is provided. In the method for driving the display device, by which images are displayed with the use of a plurality of frame periods, the display device is driven so that a voltage of 20 V or higher can be applied to a gate of a transistor, which is a driving element, for 1 millisecond or longer in a period, in which any one of scan lines is selected, in each frame period. For a plurality of frame periods, the rows are selected so that a voltage of 20 V or higher is applied to gates of all of the transistors which are driving elements for 1 millisecond or longer, whereby characteristics of the transistor can approximately be recovered to characteristics before deterioration. | 09-25-2014 |
20140292618 | DISPLAY DEVICE AND AN ELECTRONIC APPARATUS USING THE SAME - In a conventional, display device comprising a sub-display, the display device is increased in thickness and in the number of components as the number of displays is increased. In the present invention, a dual emission display device is used so that either surface of a display is used as a main display or a sub-display. Accordingly, the display device can be reduced in thickness and in the number of components. Further, mechanical reliability can be enhanced when the invention is applied to a tablet PC, a video camera and the like. | 10-02-2014 |
20140312346 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a semiconductor device with a novel structure. A semiconductor device includes a first transistor, which includes a channel formation region provided in a substrate including a semiconductor material, impurity regions, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode, and a second transistor, which includes an oxide semiconductor layer over the substrate including the semiconductor material, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode. The second source electrode and the second drain electrode include an oxide region formed by oxidizing a side surface thereof, and at least one of the first gate electrode, the first source electrode, and the first drain electrode is electrically connected to at least one of the second gate electrode, the second source electrode, and the second drain electrode. | 10-23-2014 |
20140320107 | DC/DC Converter, Power Supply Circuit, And Semiconductor Device - Provided is a DC-DC converter with improved power conversion efficiency. A transistor which is incorporated in the DC-DC converter and functions as a switching element for controlling output power includes, in its channel formation region, a semiconductor material having a wide band gap and significantly small off current compared with silicon. The transistor further comprises a back gate electrode, in addition to a general gate electrode, and a back gate control circuit for controlling a potential applied to the back gate electrode in accordance with the output power from the DC-DC converter. The control of the potential applied to the back gate electrode by the back gate control circuit enables the threshold voltage to decrease the on-state resistance when the output power is high and to increase the off-state current when the output power is low. | 10-30-2014 |
20140326999 | Semiconductor Device - An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer. | 11-06-2014 |
20140328111 | SIGNAL PROCESSING CIRCUIT AND METHOD FOR DRIVING THE SAME - An object is to provide a signal processing circuit which can be manufactured without a complex manufacturing process and suppress power consumption. A storage element includes two logic elements (referred to as a first phase-inversion element and a second phase-inversion element) which invert a phase of an input signal and output the signal, a first selection transistor, and a second selection transistor. In the storage element, two pairs each having a transistor in which a channel is formed in an oxide semiconductor layer and a capacitor (a pair of a first transistor and a first capacitor, and a pair of a second transistor and a second capacitor) are provided. The storage element is used in a storage device such as a register or a cache memory included in a signal processing circuit. | 11-06-2014 |
20140332804 | ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE - An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×10 | 11-13-2014 |
20140335653 | TRANSISTOR, LIQUID CRYSTAL DISPLAY DEVICE, AND MANUFACTURING METHOD THEREOF - Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain electrodes (including a wiring formed using the same layer as the source and drain electrodes), a step of forming a contact hole (including the removal of an insulating layer and the like in a region other than the contact hole), and a step of forming a pixel electrode (including a wiring formed using the same layer as the pixel electrode). By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at low cost and high productivity. Formation of a parasitic channel is prevented by an improvement in shape and potential of a wiring. | 11-13-2014 |
20140340365 | Display Device and Electronic Device - To increase a reading speed in a display device having a touch-panel function. The display device includes a display panel | 11-20-2014 |
20140340953 | SEMICONDUCTOR DEVICE - An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an oxide semiconductor in their channel formation region and transistors including non-oxide semiconductor in their channel formation region. An application of the present invention is to realize substantially non-volatile semiconductor memories which do not require specific erasing operation and do not suffer from damages due to repeated writing operation. Furthermore, the semiconductor device is well adapted to store multivalued data. Manufacturing methods, application circuits and driving/reading methods are explained in details in the description. | 11-20-2014 |
20140353758 | SEMICONDUCTOR DEVICE - A semiconductor device, in which an integrated circuit portion and an antenna are easily connected, can surely transmit and receive a signal to and from a communication device. The integrated circuit portion is formed of a thin film transistor over a surface of a substrate so that the area occupied by the integrated circuit portion is increased. The antenna is provided over the integrated circuit portion, and the thin film transistor and the antenna are connected. Further, the area over the substrate occupied by the integrated circuit portion is 0.5 to 1 times as large as the area of the surface of the substrate. Thus, the size of the integrated circuit portion can be close to the desired size of the antenna, so that the integrated circuit portion and the antenna are easily connected and the semiconductor device can surely transmit and receive a signal to and from the communication device. | 12-04-2014 |
20140354524 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - To increase the frequency of input of image signals in terms of design in a field-sequential liquid crystal display device. Image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix in a pixel portion of the liquid crystal display device. Thus, the frequency of input of an image signal to each pixel can be increased without change in response speed of a transistor or the like included in the liquid crystal display device. | 12-04-2014 |
20140357019 | DRIVER CIRCUIT AND SEMICONDUCTOR DEVICE - The silicon nitride layer | 12-04-2014 |
20140361370 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate electrode and a region which does not overlap with the gate electrode is provided in one TFT. Another feature of the present invention is that gate electrode comprises a first conductive layer and a second conductive layer and portion of the gate wiring has a clad structure comprising the first conductive layer and the second conductive layer with a low resistance layer interposed therebetween | 12-11-2014 |
20140367679 | SEMICONDUCTOR DEVICE - The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current. | 12-18-2014 |
20140368417 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE LIQUID CRYSTAL DISPLAY DEVICE - In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×10 | 12-18-2014 |
20140368486 | DISPLAY DEVICE - An object of the present invention is to provide a display device which does not need an input/output terminal such as an FPC or a cable for connecting to the display device and inputting an image signal to the display device directly, and can provide a setting, a display image, and the like which an operator desires. A display device of the present invention includes a display portion, a console portion to operate or input from the exterior, an antenna portion to transmit and receive a radio signal, a controller portion to control a signal input into the console portion and a signal for being transmitted or received in the antenna portion, and a battery portion to convert the radio signal received in the antenna portion into electric power and retain the electric power for driving the display portion. | 12-18-2014 |
20140368982 | PORTABLE ELECTRONIC DEVICE - A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion. | 12-18-2014 |
20140370654 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A step for forming an island-shaped semiconductor layer of a semiconductor device used in a display device is omitted in order to manufacture the semiconductor device with high productivity and low cost. The semiconductor device is manufactured through four photolithography processes: four steps for forming a gate electrode, for forming a source electrode and a drain electrode, for forming a contact hole, and for forming a pixel electrode. In the step for forming the contact hole, a groove portion in which a semiconductor layer is removed is formed, whereby formation of a parasitic transistor is prevented. An oxide semiconductor is used as a material of the semiconductor layer in which a channel is formed, and an oxide semiconductor having a higher insulating property than the semiconductor layer is provided over the semiconductor layer. | 12-18-2014 |
20140370706 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased. | 12-18-2014 |
20150014419 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 10 | 01-15-2015 |
20150016585 | SEMICONDUCTOR DEVICE - A semiconductor device includes first and second transistors having the same conductivity type and a circuit. One of a source and a drain of the first transistor is electrically connected to that of the second transistor. First and third potentials are supplied to the circuit through respective wirings. A second potential and a first clock signal are supplied to the others of the sources and the drains of the first and second transistors, respectively. A second clock signal is supplied to the circuit. The third potential is higher than the second potential which is higher than the first potential. A fourth potential is equal to or higher than the third potential. The first clock signal alternates the second and fourth potentials and the second clock signal alternates the first and third potentials. The circuit controls electrical connections between gates of the first and second transistors and the wirings. | 01-15-2015 |
20150021600 | DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor. | 01-22-2015 |
20150022251 | NONVOLATILE LATCH CIRCUIT AND LOGIC CIRCUIT, AND SEMICONDUCTOR DEVICE USING THE SAME - To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion for holding data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, an inverter electrically connected to a source electrode or a drain electrode of the transistor is included. With the transistor, data held in the latch portion can be written into a gate capacitor of the inverter or a capacitor which is separately provided. | 01-22-2015 |
20150035509 | CONTROL CIRCUIT AND DC-DC CONVERTER - To provide a control circuit in a DC-DC converter, which includes transistors with the same conductivity type. The control circuit generates a pulse signal (GS), and includes a hysteresis comparator, a logic unit, a digital-analog converter circuit, and a comparator. The hysteresis comparator converts a signal (FB) based on an output voltage of the DC-DC converter into a digital signal (comp). The logic unit generates, in accordance with the signal comp, a pulse width modulation signal (pwm) determining a pulse width of the signal GS. The logic unit also divides a reference clock signal to generate an m-bit (m is greater than or equal to 2) second digital signal. The digital-analog converter circuit converts the m-bit second digital signal into an analog signal to generate a 2 | 02-05-2015 |
20150035514 | DC-DC CONVERTER AND SEMICONDUCTOR DEVICE - A DC-DC converter with low power consumption and high power conversion efficiency is provided. The DC-DC converter includes a first transistor and a control circuit. The control circuit includes an operational amplifier generating a signal that controls switching of the first transistor, a bias circuit generating a bias potential supplied to the operational amplifier, and a holding circuit holding the bias potential. The holding circuit includes a second transistor and a capacitor to which the bias potential is supplied. The first transistor and the second transistor include a first oxide semiconductor film and a second oxide semiconductor film, respectively. The first oxide semiconductor film and the second oxide semiconductor film each contain In, M (M is Ga, Y, Zr, La, Ce, or Nd), and Zn. The atomic ratio of In to M in the first oxide semiconductor film is higher than that in the second oxide semiconductor film. | 02-05-2015 |
20150035573 | SEMICONDUCTOR DEVICE - To increase the degree of integration of a semiconductor device such as a DCDC converter. In a semiconductor device (e.g., DCDC converter) including a controller circuit and a switching transistor, the switching transistor formed using an oxide semiconductor layer is stacked over a substrate on which the controller circuit is formed. The switching transistor includes a backgate to release heat generated in the oxide semiconductor layer. The backgate has electrical conduction with a wiring to release heat and prevent a temperature increase with integration. Moreover, for power saving, a potential hold portion including a transistor and a capacitor may be formed using part of the oxide semiconductor layer over the controller circuit. The potential hold portion is formed in a circuit for generating a bias potential in the controller circuit. | 02-05-2015 |
20150041807 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE - The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor. | 02-12-2015 |
20150048366 | SEMICONDUCTOR DEVICE - A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10 | 02-19-2015 |
20150064841 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The number of manufacturing steps is reduced to provide a semiconductor device with high productivity and low cost. A semiconductor device with low power consumption and high reliability is provided. A photolithography process for forming an island-shaped semiconductor layer is omitted, and a semiconductor device is manufactured through at least four photolithography processes: a step for forming a gate electrode (including a wiring or the like formed from the same layer), a step for forming a source electrode and a drain electrode (including a wiring or the like formed from the same layer), a step for forming a contact hole, and a step for forming a pixel electrode. In the step for forming the contact hole, a groove portion is formed, whereby formation of a parasitic transistor is prevented. The groove portion overlaps with the wiring with an insulating layer provided therebetween. | 03-05-2015 |
20150069138 | SEMICONDUCTOR DEVICE - An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5×10 | 03-12-2015 |
20150069371 | METHOD FOR MANUFACTURING AN ELECTRO-OPTICAL DEVICE - An object of the present invention is to provide an EL display device having high operation performance and reliability. | 03-12-2015 |
20150070254 | DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE - Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time. | 03-12-2015 |
20150077162 | TRANSISTOR, CLOCKED INVERTER CIRCUIT, SEQUENTIAL CIRCUIT, AND SEMICONDUCTOR DEVICE INCLUDING SEQUENTIAL CIRCUIT - A transistor with excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) is provided. The transistor includes an oxide semiconductor layer including a channel formation region, a first gate electrode, a second gate electrode, a source electrode, and a drain electrode. The oxide semiconductor layer is between the first gate electrode and the second gate electrode. The oxide semiconductor layer has a pair of side surfaces in contact with the source electrode and the drain electrode and includes a region surrounded by the first gate electrode and the second gate electrode without the source electrode and the drain electrode interposed therebetween. | 03-19-2015 |