Patent application number | Description | Published |
20140091203 | DETECTION APPARATUS, DETECTION SYSTEM, AND METHOD FOR PRODUCING DETECTION APPARATUS - A detection apparatus includes a plurality of conversion elements, an interlayer insulating layer, and a covering layer. Each of the plurality of conversion elements includes an electrode electrically connected to a corresponding one of a plurality of switching elements and a semiconductor layer disposed on the electrode. The interlayer insulating layer is disposed so as to cover the plurality of switching elements and composed of an organic material, and has a surface including a first region and a second region located outside the first region. The electrodes are disposed on the surface of the interlayer insulating layer in the first region. The covering layer is disposed on the surface of the interlayer insulating layer in the second region and composed of an inorganic material. | 04-03-2014 |
20140097348 | DETECTING APPARATUS AND DETECTING SYSTEM APPARATUS AND DETECTING SYSTEM - A detecting apparatus formed on a substrate, includes a plurality of pixels arranged in a matrix, and a signal line electrically connected to the pixels. Each of the pixels includes a sensing element that converts radiant ray or light to electric charges, an amplification thin film transistor that outputs an electric signal based on an amount of the electric charges, a capacitor that holds an electric signal output by the amplification thin film transistor, and a transfer thin film transistor that transfers an electric signal held in the capacitor to the signal line. | 04-10-2014 |
20140151769 | DETECTION APPARATUS AND RADIATION DETECTION SYSTEM - A detection apparatus includes a conversion layer configured to convert incident light or radiation into a charge, electrodes configured to collect a charge produced as a result of the conversion by the conversion layer, and impurity semiconductor layers arranged between the electrodes and the conversion layer. The conversion layer is arranged over the electrodes so as to cover the electrodes. A part of the conversion layer which covers a region between an adjacent pair of the electrodes includes a portion smaller in film thickness than a part of the conversion layer which covers edges of the electrodes. | 06-05-2014 |
20140154833 | MANUFACTURING METHOD FOR DETECTION APPARATUS - A manufacturing method for a detection apparatus is provided. The method includes depositing a first impurity semiconductor layer and a first intrinsic semiconductor layer in this order on a plurality of first electrodes arranged in an array above a substrate. The method also includes patterning the first intrinsic semiconductor layer and the first impurity semiconductor layer and thereby dividing the first intrinsic semiconductor layer and the first impurity semiconductor layer so as to cover each of the plurality of first electrodes separately. The method further includes depositing a second intrinsic semiconductor layer on the patterned first intrinsic semiconductor layer. | 06-05-2014 |
20140339431 | DETECTING APPARATUS AND DETECTING SYSTEM - A detecting apparatus includes a substrate that permits visible light to pass therethrough, a converting element that includes a pixel electrode, an impurity semiconductor layer, and a semiconductor layer arranged in that order from a side adjacent to the substrate and is configured to convert radiation or light into charge, and a light source configured to emit the visible light through the substrate to the converting element. The pixel electrode includes a metal layer that permits the visible light to pass therethrough. | 11-20-2014 |
20140339561 | DETECTING DEVICE, DETECTING SYSTEM, AND MANUFACTURING METHOD OF DETECTING DEVICE - A detecting device includes a conversion device having a substrate, a pixel electrode formed of a transparent conductive oxide, a impurity semiconductor portion, and a semiconductor portion, the pixel electrode, impurity semiconductor portion, and semiconductor portion having been formed upon the substrate in that order from the substrate side. The impurity semiconductor portion includes a first region including a place in contact with the pixel electrode, and a second region situated nearer to the semiconductor portion than the first region. Concentration of dopant in the second region is higher than concentration of dopant in the first region. | 11-20-2014 |
20140353470 | DETECTION APPARATUS, METHOD OF MANUFACTURING THE SAME, AND RADIATION DETECTION SYSTEM - A method of manufacturing a detection apparatus including pixels is provided. The method includes forming an organic insulation layer above a substrate above which a switching element is formed, forming pixel electrodes divided for individual pixels above the organic insulation layer; forming an inorganic material portion above a portion of the organic insulation layer, which is uncovered with the pixel electrodes, forming an inorganic insulation film covering the plurality of pixel electrodes and the inorganic material portion, forming a semiconductor film covering the inorganic insulation film, and dividing the semiconductor film for individual pixels by etching using a stacked structure of the inorganic material portion and the inorganic insulation film as an etching stopper. | 12-04-2014 |
20150234056 | RADIATION DETECTION APPARATUS AND RADIATION DETECTION SYSTEM - A radiation detection apparatus includes conversion elements including a first electrode, a semiconductor layer, and a second electrode that are divided for each pixel; switching elements electrically connected to the first electrodes; and a first insulating layer that separates the conversion elements of adjacent pixels. The semiconductor layer is located between the first and second electrodes. A periphery of the semiconductor layer is located outside peripheries of the first and second electrodes. The semiconductor layer includes a first impurity semiconductor layer, a second impurity semiconductor layer, and an intrinsic semiconductor layer located between the first and second impurity semiconductor layers. Parameters of the apparatus are defined to set a residual charge 10 μts after the switching element is turned on to be not higher than 2%. | 08-20-2015 |