Patent application number | Description | Published |
20090035697 | NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A chemically amplified negative resist composition is provided in addition to a method of forming a resist pattern from which a desirable pattern shape can be obtained. A negative resist composition in which a resin component (A) contains a resin component (A1) having a structural unit (a1) containing an alicyclic group having a fluorinated hydroxyalkyl group and a structural unit (a2) derived from an acrylic acid ester and containing a hydroxyl group-containing alicyclic group; and an acid generator component (B) contains an acid generator (B1) expressed by the following general formula (B1): | 02-05-2009 |
20090098489 | METHOD FOR FORMING RESIST PATTERN - A method for forming a resist pattern that includes the following steps (i) and (ii): (i) a step of forming a first resist layer on a substrate using a positive resist composition, and then conducting selective exposure, thereby forming a latent image of a dense pattern on the first resist layer, and (ii) a step of forming a second resist layer on top of the first resist layer using a negative resist composition, conducting selective exposure, and then developing the first resist layer and the second resist layer simultaneously, thereby exposing a portion of the latent image of the dense pattern, wherein as the negative resist composition, a negative resist composition dissolved in an organic solvent that does not dissolve the first resist layer is used. | 04-16-2009 |
20090111054 | NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A negative resist composition including:
| 04-30-2009 |
20090130605 | RESIST COMPOSITION - A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group. | 05-21-2009 |
20090142693 | NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A negative resist composition and a method of forming a resist pattern that are capable of suppressing resist pattern swelling are provided. The negative resist composition includes an alkali-soluble resin component (A), an acid generator component (B) that generates acid upon exposure, and a cross-linking agent component (C), wherein the alkali-soluble resin component (A) is a copolymer (A1) that includes a structural unit (a1) containing, within the main chain, an aliphatic cyclic group having a fluorinated hydroxyalkyl group, a structural unit (a2) derived from an acrylate ester which contains a hydroxyl group-containing chain-like or cyclic alkyl group and has a fluoroalkyl group or fluorine atom bonded to the α-position, and a structural unit (a3) derived from an acrylate ester which contains an aliphatic cyclic group having a fluorinated hydroxyalkyl group and has a fluoroalkyl group or fluorine atom bonded to the α-position. | 06-04-2009 |
20090142698 | NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A negative resist composition that includes an alkali-soluble resin component, an acid generator component that generates acid upon exposure, and a cross-linker component, wherein the alkali-soluble resin component is a copolymer that includes a structural unit containing an aliphatic cyclic group having a fluorinated hydroxyalkyl group, and a structural unit derived from an acrylate ester that contains a hydroxyl group-containing aliphatic cyclic group, and the cross-linker component includes an alkylene urea-based cross-linker. | 06-04-2009 |
20090162785 | POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN - There are provided a polymer compound which can form a resist pattern with excellent resolution, and a negative resist composition containing the polymer compound and a resist pattern-forming method thereof. | 06-25-2009 |
20090297980 | Resist composition and method of forming resist pattern - A novel resist composition and method of forming a resist pattern that can be used in lithography applications. The resist composition includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a polymer compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, wherein R | 12-03-2009 |
20090305163 | NEGATIVE RESIST COMPOSITION - A negative resist composition is used for either a first or second resist layer within a method of forming a resist pattern that includes the following steps (i) and (ii): (i) a step of forming the first resist layer on a substrate using a first resist composition, and then conducting selective exposure that forms a dense pattern in the first resist layer, and (ii) a step of forming the second resist layer on top of the first resist layer using a second resist composition, and then conducting selective exposure that forms a pattern in the second resist layer, wherein the negative resist composition is dissolved in an alcohol-based organic solvent, which functions as an organic solvent (D) that does not dissolve the first or second resist layer that contacts the resist layer formed from the negative resist composition. | 12-10-2009 |
20100055606 | Positive resist composition and method of forming resist pattern - The present invention provides a positive resist composition capable of forming a resist pattern with high resolution, and a method of forming a resist pattern. | 03-04-2010 |
20100081080 | POLYMER COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A polymer compound including a structural unit (a0) represented by general formula (a0-1) shown below: | 04-01-2010 |
20100143845 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A positive resist composition including a base material component (A) that exhibits increased solubility in an alkali developing solution under action of an acid; and an acid generator component (B) that generates an acid upon exposure, wherein the base material component (A) includes a polymeric compound (A1) having a structural unit (a10) derived from hydroxystyrene and a structural unit (a11) represented by general formula (a11-1) shown below: | 06-10-2010 |
20100159389 | RESIN, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition including a base resin component (A) and an acid-generator component (B) which generates acid upon exposure, the component (A) including a resin (A1) which has a structural unit (a0) represented by general formula (a-0) shown below: | 06-24-2010 |
20100248144 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN - The positive resist composition including a base material component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid generator component (B) which generates acid upon exposure,
| 09-30-2010 |
20100273106 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND - A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid and an acid generator component (B) which generates acid upon exposure, wherein the base component (A) includes a polymeric compound (A1) having a structural unit (a0) containing an acid-dissociable, dissolution-inhibiting group, and the acid-dissociable, dissolution-inhibiting group has a 1,3-dioxole skeleton. | 10-28-2010 |
20110311912 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A positive resist composition including:
| 12-22-2011 |
20120100487 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND - A resist composition including a base component that generates acid upon exposure and also exhibits increased polarity by action of acid, the base component including a polymeric compound having a structural unit that generates acid upon exposure; a structural unit derived from an acrylate ester, in which a hydrogen atom bonded to a carbon atom on the α-position may be substituted with a substituent, and also includes an acid decomposable group that exhibits increased polarity by action of acid; and a structural unit represented by a particular general formula. | 04-26-2012 |
20120208124 | RESIST COMPOSITION FOR EUV, METHOD FOR PRODUCING RESIST COMPOSITION FOR EUV, AND METHOD OF FORMING RESIST PATTERN - The present invention is related to a resist composition for EUV exhibiting E0 | 08-16-2012 |
20120208128 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND - A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the base component (A) including a resin component (A1) containing a structural unit (a0-1) having a group represented by general formula (a0-1) shown below and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid. | 08-16-2012 |
20120251951 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition including:
| 10-04-2012 |
20120282551 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND - A resist composition including a resin component which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resin component including a resin component having a structural unit represented by a general formula (a0-0-1) shown below | 11-08-2012 |
20130071789 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition for use with EUV or EB including:
| 03-21-2013 |
20130089819 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND - A resist composition which can form a very fine resist pattern with excellent lithography properties, a new polymeric compound useful for the resist composition, and a compound useful as a monomer for the polymeric compound. The resist composition contains a polymeric compound containing a structural unit (a0) represented by general formula (a0) shown below. In the formula (a0), A is an anion represented by the general formula (1) or (2). | 04-11-2013 |
20130095427 | RESIST COMPOSITION FOR EUV OR EB AND METHOD OF FORMING RESIST PATTERN - The present invention relates to a resist composition for EUV or EB containing a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, and a resin component (W) that contains at least one atom selected from a fluorine atom or a silicon atom and contains a polarity conversion group that exhibits increased polarity after decomposition by the action of base, wherein the base component (A) contains a component (A1) which contains a structural unit (a0) having a group represented by general formula (a0-1) or (a0-2) shown below, and the amount of the resin component (W) relative to 100 parts by weight of the base component (A) is 1 to 15 parts by weight. In the formulas, Q | 04-18-2013 |
20130137048 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition containing a base component (A) which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, wherein the base component (A) contains a copolymer (A1) having a structural unit (a0) containing a group represented by the following general formula (a0-1) or (a0-2), a structural unit (a11) containing an acid-decomposable group which exhibits increased polarity by the action of acid and contains a polycyclic group, and a structural unit (a12) containing an acid-decomposable group which exhibits increased polarity by the action of acid and contains a monocyclic group. Each of the groups —R | 05-30-2013 |
20130143159 | RESIST COMPOSITION FOR EUV OR EB, AND METHOD OF FORMING RESIST PATTERN - A resist composition including a base component containing a polymer (A1) having a structural unit (a5) containing a group represented by general formula (a5-0-1) or (a5-0-2), wherein the amount of the monomer that derives the structural unit (a5) is not more than 100 ppm relative to (A1). In the formulas, each of Q | 06-06-2013 |
20130157201 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND - A resist composition containing a base component (A) which generates acid upon exposure, and exhibits changed solubility in a developing solution under the action of acid, wherein
| 06-20-2013 |
20130252180 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND - A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the base component (A) containing a polymeric compound (A1) including a structural unit (a0) represented by general formula (a0-1) shown below, a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a structural unit (a6) which generates acid upon exposure (wherein R | 09-26-2013 |
20130337387 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, (A) including (A1) including (a0) and (a2), and the resist composition having a Tf temperature of lower than 170° C. (└La | 12-19-2013 |
20140093824 | RESIST COMPOSITION FOR EUV OR EB AND METHOD OF FORMING RESIST PATTERN - A resist composition including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1) and a structural unit (a6) which generates acid upon exposure, and a method of forming a resist pattern using the resist composition. In general formula (a0-1), R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Wa | 04-03-2014 |
20140141373 | COMPOUND, RADICAL POLYMERIZATION INITIATOR, METHOD FOR PRODUCING COMPOUND, POLYMER, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN - A compound represented by formula (I). In the formula, R | 05-22-2014 |
20140162193 | RESIST COMPOSITION FOR EUV, METHOD OF PRODUCING RESIST COMPOSITION FOR EUV, AND METHOD OF FORMING RESIST PATTERN - A resist composition for EUV exhibiting E0 | 06-12-2014 |
20140186769 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND HIGH-MOLECULAR WEIGHT COMPOUND - A resist composition having excellent lithography properties, which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of an acid, the resist composition containing a base material component (A) which exhibits changed solubility in a developing solution by the action of an acid, and the base material component (A) containing a high-molecular weight compound (A1) having a constituent unit (a0) derived from a compound represented by the following general formula (a0-1); a method for forming a resist pattern using the resist composition; and a high-molecular weight compound (A1) having a constituent unit (a0) derived from a compound represented by the following general formula (a0-1), are disclosed. | 07-03-2014 |