Patent application number | Description | Published |
20090080406 | System and Method for Multicast and Broadcast Synchronization in Wireless Access Systems - In a method for multicast and broadcast synchronization a data payload frame is generated from a data payload. A frame number is assigned to the data payload frame, wherein the frame number includes a generating time of the data payload frame. The data payload frame is distributed to a plurality of base stations in a wireless access system. The offset spans a travel time of a data payload frame from the controller to the plurality of base stations as well as a scheduling time and a multiplexing time. | 03-26-2009 |
20090196196 | CARRIER MANAGEMENT IN A WIRELESS COMMUNICATION DEVICE ASSIGNED A SET OF TWO OR MORE CARRIERS BY A WIRELESS COMMUNICATION NETWORK - Carrier management in a wireless communication device assigned a set of two or more carriers by a wireless communication network is disclosed. In one aspect, a method of carrier management includes transmitting data over the wireless communication network on one or more carriers forming a subset of active carriers from the set of carriers assigned to the wireless communication device. A first performance metric is determined indicative of operating conditions across the set of carriers assigned to the wireless communication device. A desired number of carriers on which to transmit data based on the first performance metric is determined. The desired number of carriers on which to transmit data is compared with the number of carriers in the subset of active carriers. The subset of active carriers is dynamically adjusted based on the comparison and subsequent data is transmitted over the wireless communication network using the adjusted subset of active carriers. | 08-06-2009 |
20090197632 | ALLOCATING TRANSMIT POWER AMONG TWO OR MORE CARRIERS ASSIGNED TO A WIRELESS COMMUNICATION DEVICE - Allocating transmit power among two or more carriers assigned to a wireless communication device is disclosed. In one aspect, a method of allocating transmit power includes determining a total amount of data transmit power available at the wireless communication device for data transmission over the carriers. An efficiency metric is determined for each carrier based on the carrier's transmission characteristics and a portion of the total data transmit power is allocated to each carrier based on each carrier's efficiency metric. | 08-06-2009 |
20100291882 | SYSTEM AND METHOD FOR RESOLVING CONFLICTS BETWEEN AIR INTERFACES IN A WIRELESS COMMUNICATION SYSTEM - A device and method for resolving conflicts between air interfaces in a wireless communication system are disclosed. In one embodiment, the method comprises communicating over a first air interface, receiving a request for resources for concurrent use in communicating over a second air interface, determining that a conflict does not exist between resources for the first air interface and at least a portion of the requested resources for the second air interface, and concurrently communicating over the first air interface using resources for the first air interface and communicating over the second air interface using at least a portion of the requested resources for the second air interface. | 11-18-2010 |
20100291884 | ALLOCATING TRANSMIT POWER AMONG MULTIPLE AIR INTERFACES - Systems and methods for allocating transmit power among multiple interfaces in a wireless communication system are disclosed. In one embodiment, the method comprises determining a first power level that is used for transmitting over a first air interface, determining a maximum power level available for transmitting over a second interface, comparing the first power level to the maximum power level, determining a second power level that is used for transmitting over the second air interface based on the comparison of the first power level to the maximum power level, and generating a power-based payload constraint based on the second power level. | 11-18-2010 |
20100291966 | SYSTEM AND METHOD FOR DROPPING AND ADDING AN AIR INTERFACE IN A WIRELESS COMMUNICATION SYSTEM - A device and method for dropping an air interface is disclosed. In one embodiment, the method comprises communicating over a first air interface and a second air interface, determining an operational parameter based at least in part on a characteristic of the first air interface, and dropping the second air interface based at least in part on the operational parameter. A device and method for adding an air interface is also disclosed. In one embodiment, the system comprises a processor configured to drop one of a plurality of concurrently established air interfaces and to subsequently determine that at least one predetermined criteria is met before attempting to add the air interface. | 11-18-2010 |
20130201893 | DEVICES AND METHODS FOR MANAGING DISCONTINUOUS TRANSMISSION AT A WIRELESS ACCESS TERMINAL - Access terminals are adapted to facilitate discontinuous transmission (DTX). According to one example, an access terminal determines to disable DTX, such that a continuous reverse link transmission may occur, in a fashion such as not to interfere with the operation of a Frame Early Termination operation utilized in CDMA 1x technology. As one example, the access terminal may cease the utilization of DTX in accordance with a performance metric of a wireless communication network. The performance metric may be a forward link power control setpoint of a base station, a number of quasi-orthogonal function sets being utilized at the base station, a number of frame erasures corresponding to a forward link transmission from the base station, or any other suitable measurable parameter of the network performance. Other aspects, embodiments, and features are also claimed and described. | 08-08-2013 |
20130215812 | WIRELESS COMMUNICATION DEVICE POWER REDUCTION METHOD AND APPARATUS - A wireless communications power saving method and apparatus is provided. The method includes, when no reverse link traffic exists and no forward link traffic has been received for a predetermined amount of time, establishing, at a terminal, a reverse link transmission pilot signal duty cycle, and boosting overhead channel signal transmission power during ON slots and gating overhead channel and pilot signal transmission power during OFF slots. The design further includes estimating, at the terminal, an available data transmission rate, determining an actual data transmission rate, setting a terminal transmission duty cycle for a next period based on the estimated available data transmission rate, the actual data transmission rate, and a margin of error, and transmitting data from the terminal according to the terminal transmission duty cycle. | 08-22-2013 |
20130308562 | ANTENNA SELECTION DEVICES, METHODS, & SYSTEMS - A method, an apparatus, and a computer program product for wireless communication are provided in connection with improving antenna selection for a UE as part of an access procedure. In an example, a UE with two or more antennas is equipped to obtain receive chain measurements for the two or more antennas associated with the UE when an access procedure is initiated, select an antenna, of the two or more antennas, for transmission based on receive chain measurements for use during at least a portion of the access procedure, and perform the access procedure using the selected antenna. In another example, the UE is equipped to determine that an Access procedure is to be initiated, select an antenna from the two or more antennas based on a selection algorithm, and perform the Access procedure based using the selected antenna. Other aspects, embodiments, and features are also claimed and described. | 11-21-2013 |
20130308608 | ANTENNA SWITCHING DEVICES, METHODS, AND SYSTEMS FOR SIMULTANEOUS COMMUNICATION - This disclosure provides systems, methods, and apparatus for antenna switching for simultaneous communication. One apparatus embodiment includes a plurality of antennas including a first antenna, a second antenna, and a third antenna. The wireless communication apparatus further includes a plurality of receive circuits including a first receive circuit, at least two of the plurality of receive circuits each configured to simultaneously receive, with respect to the other, wireless communications from a different one of at least two networks relating to different radio access technologies. The wireless communication apparatus further includes a controller configured to selectively switch the first receive circuit from receiving wireless communications via the first antenna to receive wireless communications via the second antenna based on one or more performance characteristics of at least one of the first antenna and the second antenna. Other aspects, embodiments, and features are also claimed and described. | 11-21-2013 |
20130309981 | SYSTEMS, APPARATUS, AND METHODS FOR ANTENNA SELECTION - This disclosure provides systems, methods, and apparatus for mobile transmit diversity. In one aspect, a wireless communication apparatus is provided. The wireless communication apparatus includes a transmit circuit configured to transmit wireless communications via either a first antenna or a second antenna. The wireless communication apparatus further includes a receive circuit configured to receive wireless communications using either the first antenna or the second antenna. The wireless communication apparatus further includes a controller configured to switch the transmit circuit and the receive circuit from transmitting and receiving wireless communications via the first antenna to transmit and receive wireless communications via the second antenna in response to detecting that a first receive power level of the first antenna is less than a second receive power level of the second antenna and a difference between the second receive power level and the first receive power level is greater than a threshold. | 11-21-2013 |
20140003341 | METHODS AND DEVICES FOR CONTROLLING UPLINK TRANSMIT POWER AT AN ACCESS TERMINAL | 01-02-2014 |
20140105085 | DEVICES AND METHODS FOR FACILITATING DISCONTINUOUS TRANSMISSION ON ACCESS TERMINALS - Access terminals are adapted to facilitate discontinuous transmission (DTX). According to one example, an access terminal can employ a short timescale DTX mode and a long timescale DTX mode independent of one another. The access terminal can determine whether a first set of predetermined factors are present. When the first set of factors are determined to be present, the access terminal may enable a short timescale DTX mode, independent of whether a long timescale DTX mode is enabled or not. A determination may also be made whether a second set of predetermined factors are present. When the second set of predetermined factors are determined to be present, the access terminal may enable a long timescale DTX mode, independent of whether the short timescale DTX mode is enabled or not. Other aspects, embodiments, and features are also included. | 04-17-2014 |
20140105126 | APPARATUS AND METHODS FOR ENHANCED MAXIMUM POWER IN MULTICARRIER WIRELESS COMMUNICATIONS - Aspects of the present disclosure are directed to improving maximum transmit power in multi-carrier reverse-link transmission. In one aspect, a method of carrier management for a multi-carrier reverse link transmission is disclosed. A method can include transmitting a reverse link signal on a plurality of carriers, and the reverse link signal including payload data and overhead data. A method can funnel payload data onto a first carrier of the plurality of carriers, while maintaining transmission of the overhead data on all the carriers of the plurality of carriers. Other aspects, embodiments, and features are also claimed and described. | 04-17-2014 |
20140213210 | Method of Robust Receive (Rx) Processing for Radio Frequency Coexistence Management in Dual-SIM-Dual-Active Communication Devices - The various embodiments include a dual-SIM-dual-active (DSDA) device and methods for implementing robust receive (Rx) processing to resolve radio frequency coexistence interference between two subscriptions operating on the DSDA device. The DSDA device may detect when a subscription (the “aggressor”) de-senses the other subscription (the “victim”) as a result of the aggressor's transmissions, and in response, implement robust Rx processing to mitigate the effects of de-sense on the victim while causing minimal impact to the aggressor. | 07-31-2014 |
20140213235 | Method of Robust Transmit (Tx) Processing for Radio Frequency Coexistence Management in Dual-SIM-Dual-Active communication Devices - The various embodiments include a dual-SIM-dual-active (DSDA) device and methods for implementing robust transmit (Tx) processing to resolve radio frequency coexistence interference between two subscriptions operating on the DSDA device. The DSDA device may detect when one subscription (the “aggressor”) de-senses the other subscription (the “victim”) as a result of the aggressor's transmissions, and in response, implement robust Tx processing to mitigate the effects of de-sense on the victim. | 07-31-2014 |
20140247761 | WIRELESS COMMUNICATION DEVICE POWER REDUCTION METHOD AND APPARATUS - A wireless communications power saving method and apparatus is provided. The method includes, when no reverse link traffic exists and no forward link traffic has been received for a predetermined amount of time, establishing, at a terminal, a reverse link transmission pilot signal duty cycle, and boosting overhead channel signal transmission power during ON slots and gating overhead channel and pilot signal transmission power during OFF slots. The design further includes estimating, at the terminal, an available data transmission rate, determining an actual data transmission rate, setting a terminal transmission duty cycle for a next period based on the estimated available data transmission rate, the actual data transmission rate, and a margin of error, and transmitting data from the terminal according to the terminal transmission duty cycle. | 09-04-2014 |
20140274201 | DUAL-SIM WIRELESS COMMUNICATIONS DEVICE AND METHOD FOR MITIGATING RECEIVER DESENSE IN DUAL-ACTIVE OPERATION - Aspects of the disclosure provide for an access terminal configured to enable communication with two or more wireless communications networks simultaneously. According to some aspects of the disclosure, an access terminal (e.g., dual-SIM access terminal) can be active simultaneously on both networks with reduced interference between transmission and reception. A number of different techniques for mitigating desense on a victim's Rx are illustrated in this disclosure with a GSM aggressor and an EV-DO victim as non-limiting examples. Other aspects, embodiments, and features are also claimed and described | 09-18-2014 |
20140302804 | Allocating transmit power among multiple air interfaces - Systems and methods for allocating transmit power among multiple interfaces in a wireless communication system are disclosed. In one embodiment, the method comprises determining a first power level used for transmission over a first air interface, determining a second power level used for transmission over a second air interface, comparing a composite of the first power level and the second power level to a threshold power level, and adjusting the second power level based on the comparison. | 10-09-2014 |
20140329483 | DEVICES, METHODS, AND SYSTEMS FOR INITIAL SIGNAL ACQUISITION - Methods and apparatus for selecting one or more suitable antennas for use during power-up/initial acquisition and out of service modes are disclosed. In some examples, initial system acquisition may be performed for a particular receive circuit utilizing a selected one of a first antenna or a second antenna, based on a channel characteristic, such as an automatic gain control (AGC) value corresponding to a received signal energy utilizing either of the antennas. In another example, initial system acquisition utilizing either a receive diversity determination algorithm or an antenna switching determination algorithm may be performed based on a channel characteristic, such as an AGC value corresponding to a received signal energy utilizing one of the antennas coupled to one of the receive circuits. | 11-06-2014 |
20150017940 | APPARATUS AND METHOD FOR ADAPTIVE RECEIVE DIVERSITY USING LINK QUALITY IN WIRELESS COMMUNICATIONS - Aspects of the present disclosure relate to apparatuses and methods for performing adaptive receive-diversity (RxD) to improve power consumption using multiple antennas/receivers. In one aspect, a first receive-diversity (RxD) state is enabled at an access terminal utilizing two receive chains for a communication link. Link quality metrics corresponding to the communication link are determined. The access terminal selectively switches from the first RxD state to a second RxD state utilizing three or more receive chains dependent upon the link quality metrics, such that the energy per bit of the second RxD state is more energy efficient than the energy per bit of the first RxD state. | 01-15-2015 |
20150023217 | DUAL SIM DUAL ACTIVE SUBSCRIBER IDENTIFICATION MODULE WITH A SINGLE TRANSMIT CHAIN AND DUAL OR SINGLE RECEIVE CHAIN - A method, an apparatus, and a computer program product are provided. The apparatus may be configured to establish a first call for a first subscription, and accept a second call for a second subscription while maintaining the first call. A single RF transmit chain may be scheduled for uplink transmissions associated with the first call and uplink transmissions associated with the second call. A timesharing schedule for the transmit chain may determine timing for the uplink transmissions associated with the first call is transmitted and when the uplink transmissions associated with the second call is transmitted on the transmit chain. Downlink transmissions associated with the first and second calls may be received using different receive chain. Downlink transmissions associated with the first and second calls may be received using the same receive chain. | 01-22-2015 |
20150023230 | DUAL SIM DUAL ACTIVE SUBSCRIBER IDENTIFICATION MODULE WITH A SINGLE TRANSMIT CHAIN AND DUAL OR SINGLE RECEIVE CHAIN - A method, an apparatus, and a computer program product are provided. The apparatus may be configured to establish a first call for a first subscription, and accept a second call for a second subscription while maintaining the first call. A single RF transmit chain may be scheduled for uplink transmissions associated with the first call and uplink transmissions associated with the second call. A timesharing schedule for the transmit chain may determine timing for the uplink transmissions associated with the first call is transmitted and when the uplink transmissions associated with the second call is transmitted on the transmit chain. Downlink transmissions associated with the first and second calls may be received using different receive chain. Downlink transmissions associated with the first and second calls may be received using the same receive chain. | 01-22-2015 |
20150023258 | DUAL SIM DUAL ACTIVE SUBSCRIBER IDENTIFICATION MODULE WITH A SINGLE TRANSMIT CHAIN AND DUAL OR SINGLE RECEIVE CHAIN - A method, an apparatus, and a computer program product are provided. The apparatus may be configured to establish a first call for a first subscription, and accept a second call for a second subscription while maintaining the first call. A single transmit chain may be used to transmit uplink traffic associated with the first call and uplink traffic associated with the second call. A timesharing schedule for the transmit chain may determine when the uplink traffic associated with the first call is transmitted and when the uplink traffic associated with the second call is transmitted on the transmit chain. Downlink traffic associated with the first and second calls may be received using different receive chain. Downlink traffic associated with the first and second calls may be received using the same receive chain. | 01-22-2015 |
20150055528 | DEVICES AND METHODS FOR FACILITATING AUTONOMOUS DISCONTINUOUS TRANSMISSION IN ACCESS TERMINALS - Access terminals are adapted to facilitate discontinuous transmission (DTX) employable during active transmissions. According to one example, an access terminal may be actively transmitting a plurality of frames on a reverse link channel. The access terminal can autonomously implement a DTX operation during the active reverse link transmissions, in which a transmitter circuit is powered down for periods of time less than a duration of one frame. As a result, reverse link transmissions are punctured during the powered down periods. Other aspects, embodiments, and features are also included. | 02-26-2015 |
20150072667 | COMMUNICATING PHYSICAL LAYER WIRELESS PARAMETERS OVER AN APPLICATION PROGRAMMING INTERFACE - Methods, systems, and devices are described for communicating physical layer wireless parameters over an application programming interface. A wireless modem of a wireless device may measure at least one physical layer wireless parameter. The wireless modem may report the at least one physical layer wireless parameter to an application running on the wireless device over an application programming interface between the wireless modem and the application. A behavior of the application may be adapted to control wireless communications between the application and a network based on the at least one physical layer wireless parameter reported by the wireless modem. Other aspects, embodiments, and features are also claimed and described. | 03-12-2015 |
20150271872 | DUAL-SIM WIRELESS COMMUNICATIONS DEVICE AND METHOD FOR MITIGATING RECEIVER DESENSE IN DUAL-ACTIVE OPERATION - Aspects of the disclosure provide for an access terminal configured to enable communication with two or more wireless communications networks simultaneously. According to some aspects of the disclosure, an access terminal (e.g., dual-SIM access terminal) can be active simultaneously on both networks with reduced interference between transmission and reception. A number of different techniques for mitigating desense on a victim's Rx are illustrated in this disclosure with a GSM aggressor and an EV-DO victim as non-limiting examples. Other aspects, embodiments, and features are also claimed and described | 09-24-2015 |
20150282057 | Opportunistic Mobile Receive Diversity (OMRD) in a Dual-SIM Dual-Active (DSDA) Device - Methods and devices are disclosed for implementing opportunistic mobile receive diversity (“OMRD”) on a multi-SIM wireless device. The wireless device may receive a request from a protocol stack associated with the first SIM to utilize the second RF resource for receive diversity, and determine whether a protocol stack associated with the second SIM currently has a lower priority than the protocol stack associated with the first SIM. Upon determining that the protocol stack associated with the second SIM currently has a lower priority than the protocol stack associated with the first SIM, the wireless device may grant control of the second RF resource to the protocol stack associated with the first SIM. Granting control may provide, to the protocol stack associated with the first SIM, a capability to enable and disable receive diversity using the first and second RF resources. | 10-01-2015 |
20150341825 | MODEM ASSISTED CONTENTION HANDLING OF MULTIPLE ACTIVE CONNECTIONS IN WIRELESS COMMUNICATIONS - Aspects of the present disclosure provide wireless communication devices and methods configured to operate with multiple active connections. A user equipment establishes a first active connection associated with a first subscription. The user equipment also establishes a second active connection, simultaneous to the first active connection, associated with a second subscription. The user equipment provides modem information corresponding to connection qualities of the first active connection and second active connection, to an operating system of the user equipment. Furthermore, the user equipment mitigates contention between the first active connection and second active connection by degrading at least one of the first active connection or second active connection in accordance with a decision given by the operating system based on the modem information. | 11-26-2015 |
20150349869 | ENHANCED OPPORTUNISTIC MOBILE RECEIVE DIVERSITY FOR DUAL-SIM DUAL-ACTIVE MOBILE DEVICE - A method for performing mobile receive diversity may include: enabling a first receive chain associated with a first radio access technology (RAT) to receive one or more signals from a second RAT; receiving second RAT signals on a second receive chain; enabling receive diversity on a modem associated with a second receive chain; generating, by a diversity receiver, a receive diversity signal based on the one or more second RAT signals received by the first receive chain during periods of time the first receive chain does not receive a signal from the first RAT; and outputting the generated receive diversity signal to a decoder for the second RAT. | 12-03-2015 |
20150350982 | METHOD AND APPARATUS FOR IMPROVING VOICE AND DATA COMMUNICATIONS IN A WIRELESS NETWORK - Methods and apparatuses relating to wireless communication of a user equipment (UE) are provided including initiating an access procedure for a first radio access technology (RAT) and tuning a receiver to a second RAT for a duration during the access procedure for the first RAT. The methods and apparatuses further include receiving a paging signal via the second RAT during the duration, and tuning the receiver to the first RAT following the duration to continue the access procedure for the first RAT. Other aspects, embodiments, and features are also claimed and described. | 12-03-2015 |
20150358859 | APPARATUS AND METHODS FOR REDUCING ROUND TRIP TIME DELAY OF REVERSE LINK TRANSMISSION - Aspects of the present disclosure can improve the round trip time delay of reverse link transmissions of an access terminal. The access terminal determines a first traffic-to-pilot power (T2P) ratio after a session negotiation. Then, the access terminal determines a second T2P ratio of a first subpacket of a physical layer packet, wherein the second T2P ratio may be boosted relative to the first T2P ratio. The access terminal transmits the at least one subpacket at the second T2P ratio utilizing a reverse link. Therefore, the physical layer packet may be early terminated, and round trip time delay of the reverse link may be reduced. | 12-10-2015 |
20150358942 | APPARATUS AND METHOD FOR IMPROVING DATA THROUGHPUT OF A TUNE-AWAY OPERATION IN A WIRELESS COMMUNICATION SYSTEM - Aspects of the present disclosure relate to wireless communication devices and methods configured to operate with multiple communication protocols in tune-away operations. Some aspects of the present disclosure may improve the legacy tune-away operations at an access terminal. An access terminal establishes a call utilizing a first communication protocol, tunes away from the call to receive cell signaling utilizing a second communication protocol, and tunes back to the call utilizing the first communication protocol. Following the tuning back, during a first predetermined number of subframes and if the size of a reverse link (RL) packet is smaller than a first packet size and larger than a second packet size, the access terminal forces the RL packet to be a low latency (LoLat) packet. | 12-10-2015 |
20160050627 | METHODS AND APPARATUS FOR POWER EFFICIENT ACCESS IN CONGESTED NETWORKS - Methods and apparatus for of tracking network system timing are provided. In one aspect, a method for wireless communication comprises determining a probability of passing an accessibility test for accessing a network. The method further includes comparing the determined probability to a threshold. The method further includes selectively performing a backoff procedure for a period of time based on the comparison. | 02-18-2016 |
20160050644 | METHODS AND APPARATUS FOR QUICK BURST TUNE AWAY IN MULTI-SIM DEVICES - Methods and apparatus for wireless communication are provided. In one aspect, an apparatus for wireless communication comprises a processor configured to determine a time when the plurality of page bursts for the first radio access technology (RAT) will be received. The processor further configured to allocate a portion of time between page bursts for use by a second RAT. | 02-18-2016 |
20160066217 | APPARATUS AND METHOD OF INTELLIGENT RADIO ACCESS TECHNOLOGY RESELECTION IN WIRELESS COMMUNICATIONS - Aspects of the present disclosure relate to a multimode user equipment (UE) that when suffering a power crunch, can intelligently reselect to another RAT to extend the battery life of the UE. The reselected RAT has a lower specified maximum transmit power relative to the currently attached RAT. Therefore, the UE may reduce its battery drain to extend its service time per charge when a call is made utilizing the reselected RAT. The UE intelligently selects the RAT that will likely consume less uplink transmit power to communicate with a base station in order to conserve battery power in a poor coverage area, when the UE is experiencing a power crunch condition. | 03-03-2016 |
20160073398 | METHODS AND APPARATUS FOR PAGING PERFORMANCE IMPROVEMENT USING TIMING INFORMATION UPDATE IN MULTI-SIM-MULTI-STANDBY USER EQUIPMENT - Methods and apparatus for of tracking network system timing are provided. In one aspect, a method for updating system timing information comprises determining a first periodicity of a plurality of first windows for a first radio access technology of a user equipment to access a radio frequency chain of the user equipment. The method further includes identifying a time between the plurality of first windows for a second radio access technology of the user equipment to access the radio frequency chain. The method further includes allocating a portion of the time between the first windows for the second radio access technology to update timing information of the second radio access technology. | 03-10-2016 |
20160073445 | METHOD AND APPARATUS FOR PERFORMING FORWARD LINK DISCONTINUOUS RECEPTION IN CDMA2000 1X/1X ADVANCED NETWORK - Aspects of the present disclosure provides an apparatus configured to perform discontinuous reception (DRX) in a wireless communications system. The apparatus is configured to receive a forward link (FL) transmission from a network. The FL transmission includes one or more frames, wherein each of the frames includes a plurality of power control groups (PCGs). The apparatus determines a FL setpoint. If the FL setpoint is less than a maximum setpoint value by an amount greater than a predetermined value, the apparatus autonomously enables DRX to receive a predetermined subset of PCGs among the plurality of PCGs. | 03-10-2016 |
20160073446 | APPARATUS AND METHODS FOR PERFORMING DISCONTINUOUS RECEPTION (DRX) AND LONG TIMESCALE DISCONTINUOUS TRANSMISSION (LDTX) IN A WIRELESS COMMUNICATIONS SYSTEM - Aspects of the present disclosure provide a method of performing discontinuous reception (DRX) and long timescale discontinuous transmission (LDTX) in a wireless communications system. An access terminal (AT) includes a communications interface configured to receive a forward link (FL) transmission from a network, wherein the FL transmission includes a plurality of frames each including at least two half slots. The AT further includes a computer-readable medium with instructions and a processing circuit coupled to the communications interface and the computer-readable medium. The AT is configured to enable a LDTX mode including an LDTX on period and an LDTX off period. In the LDTX off period, the AT autonomously enables a DRX mode in at least a portion of a half slot based on data contained in the half slot. | 03-10-2016 |
20160095156 | OUT-OF-SERVICE SCAN OPTIMIZATION USING BROADCAST NEIGHBOR LIST INFORMATION IN WIRELESS COMMUNICATIONS - Aspects of the present disclosure provide an improved out-of-service (OOS) scan method that can increase the speed of acquiring service while avoiding unnecessary full scan, thus reducing scan time and/or power consumption of a user equipment. In one aspect of the disclosure, if a user equipment fails to acquire service after scanning a most recently used (MRU) list, the user equipment scans for the networks or cells stored in a neighbor list before performing a wider scan or a full scan. | 03-31-2016 |
Patent application number | Description | Published |
20080272516 | Successive Shrinking of Elastomers - a Simple Miniaturization Protocol to Produce Micro- and Nano-Structures - A stepwise contraction and adsorption nanolithography (SCAN) patterning process can shrink complex microstructures (produced by current microfabrication technology) into the nanometer region. The basis of SCAN is to transfer a pre-engineered microstructure onto a extended elastomer. This extended elastomer is then allowed to relax, reducing the microstructure accordingly. The new miniaturized structure is then used as a stamp to transfer the structure onto another stretched elastomer. Through iterations of this procedure, patterns of materials with pre-designed geometry are miniaturized to the desired dimensions, including sub-100 ran. The simplicity and high throughput capability of SCAN make the platform a competitive alternative to other micro- and nanolithography techniques for potential applications in multiplexed sensors, non-binary optical displays, biochips, nanoelectronics devices, and microfluidic devices. | 11-06-2008 |
20080317664 | Method for Gas Storage - This invention released a method for gas storage, characterized that gas is stored in the form of nanometer scale bubbles or gas layers on the solid-liquid surfaces. Said gas is hydrogen, the surface of the solid is planar solid surface, irregular solid surface, or porous material surface, especially highly oriented pyrolytic graphite (HOPG) surface, and the liquid is water, inorganic acid, inorganic salt, inorganic alkali, organic solution or colloid solution. The gas to be stored is produced by electrochemical method, inorganic reaction, organic reaction, biologic reaction or physical method. | 12-25-2008 |
20110140233 | Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process - A parasitic vertical PNP bipolar transistor in BiCMOS process comprises a collector, a base and an emitter. The collector is formed by active region with p-type ion implanting layer (P type well in NMOS). It connects a P-type conductive region, which formed in the bottom region of shallow trench isolation (STI). The collector terminal connection is through the P-type buried layer and the adjacent active region. The base is formed by N type ion implanting layer above the collector which shares a N-type lightly doped drain (NLDD) implanting of NMOS. Its connection is through the N-type poly on the base region. The emitter is formed by the P-type epitaxy layer on the base region with heavy p-type doped, and connected by the extrinsic base region of NPN bipolar transistor device. This invention also includes the fabrication method of this parasitic vertical PNP bipolar transistor in BiCMOS process. And this PNP bipolar transistor can be used as the I/O (input/output) device in high speed, high current and power gain BiCMOS circuits. It also provides a device option with low cost. | 06-16-2011 |
20110140239 | High Voltage Bipolar Transistor with Pseudo Buried Layers - A high voltage bipolar transistor with shallow trench isolation (STI) comprises the areas of a collector formed by implanting first electric type impurities into active area and connected with pseudo buried layers at two sides; Pseudo buried layers which are formed by implanting high dose first type impurity through the bottoms of STI at two sides if active area, and do not touch directly; deep contact through field oxide to contact pseudo buried layers and pick up the collectors; a base deposited on the collector by epitaxial growth and in-situ doped by second electric type impurity, in which the intrinsic base touches local collector and extrinsic base is used for base pick-up; a emitter which is a polysilicon layer deposited on the intrinsic base and doped with first electric type impurities. This invention makes the depletion region of collector/base junction from 1D (vertical) distribution to 2D (vertical and lateral) distribution. The bipolar transistor's breakdown voltages are increased by only enlarge active critical dimension (CD). This is low-cost process. | 06-16-2011 |
20110156143 | Parasitic Vertical PNP Bipolar Transistor And Its Fabrication Method In Bicmos Process - This invention published a parasitic vertical PNP bipolar transistor in BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process; the bipolar transistor comprises a collector, a base and an emitter. Collector is formed by active region with p-type ion implanting layer. It connects a p-type buried layer which formed in the bottom region of STI (Shallow Trench Isolation). The collector terminal connection is through the p-type buried layer and the adjacent active region. The base is formed by active region with n type ion implanting which is on the collector. Its connection is through the original p-type epitaxy layer after converting to n-type. The emitter is formed by the p-type epitaxy layer on the base region with heavy p-type doped. This invention also comprises the fabrication method of this parasitic vertical PNP bipolar in BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process. And this PNP bipolar transistor can be used as the IO (Input/Output) device in high speed, high current and power gain BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) circuits. It also provides a device option with low cost. | 06-30-2011 |
20110156202 | Parasitic Vertical PNP Bipolar Transistor in BICMOS Process - A parasitic vertical PNP device in one type of BiCMOS process with shallow trench isolation (STI) comprises a collector formed by a p type impurity ion implantation layer inside active area, the bottom of collector connects to a p type buried layer, the p type pseudo buried layer is formed in bottom of shallow trench at both sides of collector active region through ion implantation, deep contacts through field oxide to connect pseudo buried layers and to pick up the collector; a base, formed by n type impurity ion implantation layer which sits on top of above stated collector; an emitter, a p type epitaxy layer lies above base and is connected out directly by a metal contact. Part of the p type epitaxy layer is converted into n type, which serves as connection path of base. Present invented PNP can be used as output device of BiCMOS high frequency circuit. It has a small device area and conduction resistance. | 06-30-2011 |
20130092981 | SIGE HBT HAVING A POSITION CONTROLLED EMITTER-BASE JUNCTION - A SiGe HBT having a position controlled emitter-base junction is disclosed. The SiGe HBT includes: a collector region formed of an N-doped active region; a base region formed on the collector region and including a base epitaxial layer, the base epitaxial layer including a SiGe layer and a capping layer formed thereon, the SiGe layer being formed of a SiGe epitaxial layer doped with a P-type impurity, the capping layer being doped with an N-type impurity; and an emitter region formed on the base region, the emitter region being formed of polysilicon. By optimizing the distribution of impurities doped in the base region, a controllable position of the emitter-base junction and adjustability of the reverse withstanding voltage thereof can be achieved, and thereby increasing the stability of the process and improving the uniformity within wafer. | 04-18-2013 |
20130113020 | SIGE HBT AND METHOD OF MANUFACTURING THE SAME - A SiGe HBT is disclosed, which includes: a silicon substrate; shallow trench field oxides formed in the silicon substrate; a pseudo buried layer formed at bottom of each shallow trench field oxide; a collector region formed beneath the surface of the silicon substrate, the collector region being sandwiched between the shallow trench field oxides and between the pseudo buried layers; a polysilicon gate formed above each shallow trench field oxide having a thickness of greater than 150 nm; a base region on the polysilicon gates and the collector region; emitter region isolation oxides on the base region; and an emitter region on the emitter region isolation oxides and a part of the base region. The polysilicon gate is formed by gate polysilicon process of a MOSFET in a CMOS process. A method of manufacturing the SiGe HBT is also disclosed. | 05-09-2013 |
20130113078 | POLYSILICON-INSULATOR-SILICON CAPACITOR IN A SIGE HBT PROCESS AND MANUFACTURING METHOD THEREOF - A PIS capacitor in a SiGe HBT process is disclosed, wherein the PIS capacitor includes: a silicon substrate; a P-well and shallow trench isolations formed in the silicon substrate; a P-type heavily doped region formed in an upper portion of the P-well; an oxide layer and a SiGe epitaxial layer formed above the P-type heavily doped region; spacers formed on sidewalls of the oxide layer and the SiGe epitaxial layer; and contact holes for picking up the P-well and the SiGe epitaxial layer and connecting each of the P-well and the SiGe epitaxial layer to a metal wire. A method of manufacturing the PIS capacitor is also disclosed. The PIS capacitor of the present invention is manufactured by using SiGe HBT process, thus providing one more device option for the SiGe HBT process. | 05-09-2013 |
20130126945 | ULTRA HIGH VOLTAGE SIGE HBT AND MANUFACTURING METHOD THEREOF - An ultra high voltage silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, in which, a collector region is formed between two isolation structures; a pseudo buried layer is formed under each isolation structure and each side of the collector region is connected with a corresponding pseudo buried layer; a SiGe field plate is formed on each of the isolation structures; each pseudo buried layer is picked up by a first contact hole electrode and each SiGe field plate is picked up by a second contact hole electrode; and each first contact hole electrode is connected to its adjacent second contact hole electrode and the two contact hole electrodes jointly serve as an emitter. A manufacturing method of the ultra high voltage SiGe HBT is also disclosed. | 05-23-2013 |
20130140604 | SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF - A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, including: a substrate; two field oxide regions formed in the substrate; two pseudo buried layers, each being formed under a corresponding one of the field oxide regions; a collector region formed between the field oxide regions, the collector region laterally extending under a corresponding one of the field oxide regions and each side of the collector region being connected with a corresponding one of the pseudo buried layers; a matching layer formed under both the pseudo buried layers and the collector region; and two deep hole electrodes, each being formed in a corresponding one of the field oxide regions, the deep hole electrodes being connected to the corresponding ones of the pseudo buried layers for picking up the collector region. A manufacturing method of the SiGe HBT is also disclosed. | 06-06-2013 |
20130175581 | ZENER DIODE IN A SIGE BICMOS PROCESS AND METHOD OF FABRICATING THE SAME - A zener diode in a SiGe BiCMOS process is disclosed. An N-type region of the zener diode is formed in an active region and surrounded by an N-deep well. A pseudo buried layer is formed under each of the shallow trench field oxide regions on a corresponding side of the active region, and the N-type region is connected to the pseudo buried layers via the N-deep well. The N-type region has its electrode picked up by deep hole contacts. A P-type region of the zener diode is formed of a P-type ion implanted region in the active region. The P-type region is situated above and in contact with the N-type region, and has a doping concentration greater than that of the N-type region. The P-type region has its electrode picked up by metal contact. A method of fabricating zener diode in a SiGe BiCMOS process is also disclosed. | 07-11-2013 |
20130196491 | METHOD OF PREVENTING DOPANT FROM DIFFUSING INTO ATMOSPHERE IN A BICMOS PROCESS - A method of preventing dopant from diffusing into atmosphere in a BiCMOS process is disclosed. The BiCMOS process includes the steps of: depositing a first silicon oxide layer and a silicon nitride layer over surface of a silicon substrate; etching the silicon substrate to form a plurality of shallow trenches therein; depositing a second silicon oxide layer over surface of the silicon substrate and forming silicon oxide sidewalls over inner side faces of each of the plurality of shallow trenches; forming a heavily doped pseudo buried layer under a bottom of one of the plurality of shallow trenches by implanting a dopant with a high concentration; performing an annealing process to promote diffusion of the dopant contained in the pseudo buried layer, wherein the method includes growing, by thermal oxidation, a silicon oxide layer over a bottom of each of the plurality of shallow trenches during the annealing process. | 08-01-2013 |
20130299879 | SIGE HBT DEVICE AND MANUFACTURING METHOD OF THE SAME - A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) device that includes a substrate; a buried oxide layer near a bottom of the substrate; a collector region above and in contact with the buried oxide layer; a field oxide region on each side of the collector region; a pseudo buried layer under each field oxide region and in contact with the collector region; and a through region under and in contact with the buried oxide layer. A method for manufacturing a SiGe HBT device is also disclosed. The SiGe HBT device can isolate noise from the bottom portion of the substrate and hence can improve the intrinsic noise performance of the device at high frequencies. | 11-14-2013 |
20130328108 | ULTRA-HIGH VOLTAGE SIGE HBT DEVICE AND MANUFACTURING METHOD OF THE SAME - An ultra-high voltage silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), which includes: a P-type substrate; an N-type matching layer, a P-type matching layer and an N− collector region stacked on the P-type substrate from bottom up; two field oxide regions separately formed in the N− collector region; N+ pseudo buried layers, each under a corresponding one of the field oxide regions and in contact with each of the N-type matching layer, the P-type matching layer and the N− collector region; an N+ collector region between the two field oxide regions and through the N− collector region and the P-type matching layer and extending into the N-type matching layer; and deep hole electrodes, each in a corresponding one of the field oxide regions and in contact with a corresponding one of the N+ pseudo buried layers. A method of fabricating an ultra-high voltage SiGe HBT is also disclosed. | 12-12-2013 |
20140124838 | HIGH SPEED SIGE HBT AND MANUFACTURING METHOD THEREOF - A high-speed SiGe HBT is disclosed, which includes: a substrate; STIs formed in the substrate; a collector region formed beneath the substrate surface and located between the STIs; an epitaxial dielectric layer including two portions, one being located on the collector region, the other being located on one of the STIs; a base region formed both in a region between and on surfaces of the two portions of the epitaxial dielectric layer; an emitter dielectric layer including two portions, both portions being formed on the base region; an emitter region formed both in a region between and on surfaces of the two portions of the emitter dielectric layer; a contact hole formed on a surface of each of the base region, the emitter region and the collector region. A method of manufacturing high-speed SiGe HBT is also disclosed. | 05-08-2014 |
Patent application number | Description | Published |
20120199875 | CASCODE SCHEME FOR IMPROVED DEVICE SWITCHING BEHAVIOR - A switching device includes a low voltage normally-off transistor and a control circuit built into a common die. The device includes source, gate and drain electrodes for the transistor and one or more auxiliary electrodes. The drain electrode is on one surface of a die on which the transistor is formed, while each of the remaining electrodes is located on an opposite surface. The one or more auxiliary electrodes provide electrical contact to the control circuit, which is electrically connected to one or more of the other electrodes. | 08-09-2012 |
20130001694 | LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR (TVS) WITH REDUCED CLAMPING VOLTAGE - A low capacitance transient voltage suppressor with reduced clamping voltage includes an n+ type substrate, a first epitaxial layer on the substrate, a buried layer formed within the first epitaxial layer, a second epitaxial layer on the first epitaxial layer, and an implant layer formed within the first epitaxial layer below the buried layer. The implant layer extends beyond the buried layer. A first trench is at an edge of the buried layer and an edge of the implant layer. A second trench is at another edge of the buried layer and extends into the implant layer. A third trench is at another edge of the implant layer. Each trench is lined with a dielectric layer. A set of source regions is formed within a top surface of the second epitaxial layer. The trenches and source regions alternate. A pair of implant regions is formed in the second epitaxial layer. | 01-03-2013 |
20130049102 | Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path - This invention discloses a semiconductor power device formed in a semiconductor substrate comprises a highly doped region near a top surface of the semiconductor substrate on top of a lightly doped region. The semiconductor power device further comprises a body region, a source region and a gate disposed near the top surface of the semiconductor substrate and a drain disposed at a bottom surface of the semiconductor substrate. The semiconductor power device further comprises source trenches opened into the highly doped region filled with a conductive trench filling material in electrical contact with the source region near the top surface. The semiconductor power device further comprises a buried field ring regions disposed below the source trenches and doped with dopants of opposite conductivity from the highly doped region. In an alternate embodiment, the semiconductor power device further comprises doped regions surrounded the sidewalls of the source trenches and doped with a dopant of a same conductivity type of the buried field ring regions to function as a charge supply path. | 02-28-2013 |
20140027841 | HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM) - A semiconductor power device formed in a semiconductor substrate comprising a highly doped region near a top surface of the semiconductor substrate on top of a lightly doped region supported by a heavily doped region. The semiconductor power device further comprises source trenches opened into the highly doped region filled with conductive trench filling material in electrical contact with the source region near the top surface. The semiconductor power device further comprises buried P-regions disposed below the source trenches and doped with dopants of opposite conductivity from the highly doped region. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. | 01-30-2014 |
20140134825 | LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR (TVS) WITH REDUCED CLAMPING VOLTAGE - A low capacitance transient voltage suppressor with reduced clamping voltage includes an n+ type substrate, a first epitaxial layer on the substrate, a buried layer formed within the first epitaxial layer, a second epitaxial layer on the first epitaxial layer, and an implant layer formed within the first epitaxial layer below the buried layer. The implant layer extends beyond the buried layer. A first trench is at an edge of the buried layer and an edge of the implant layer. A second trench is at another edge of the buried layer and extends into the implant layer. A third trench is at another edge of the implant layer. Each trench is lined with a dielectric layer. A set of source regions is formed within a top surface of the second epitaxial layer. The trenches and source regions alternate. A pair of implant regions is formed in the second epitaxial layer. | 05-15-2014 |
20140239436 | HIGH VOLTAGE FAST RECOVERY TRENCH DIODE - Aspects of the present disclosure describe high voltage fast recovery trench diodes and methods for make the same. The device may have trenches that extend at least through a top P-layer and an N-barrier layer. A conductive material may be disposed in the trenches with a dielectric material lining the trenches between the conductive material and sidewalls of the trenches. A highly doped P-pocket may be formed in an upper portion of the top P-layer between the trenches. A floating N-pocket may be formed directly underneath the P-pocket. The floating N-pocket may be as wide as or wider than the P-pocket. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. | 08-28-2014 |
20140264433 | DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD - A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the semiconductor substrate of a second conductivity type; 2) applying a gate trench mask to open a first trench and second trench followed by forming a gate insulation layer to pad the trench and filling the trench with a polysilicon layer to form the first trench gate and the second trench gate; 3) implanting dopants of the first conductivity type to form an upper heavily doped region in the epitaxial layer; and 4) forming a planar gate on top of the first trench gate and apply implanting masks to implant body dopants and source dopants to form a body region and a source region near a top surface of the semiconductor substrate. | 09-18-2014 |
20140319604 | HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM) - A semiconductor power device formed in a semiconductor substrate comprising a highly doped region near a top surface of the semiconductor substrate on top of a lightly doped region supported by a heavily doped region. The semiconductor power device further comprises source trenches opened into the highly doped region filled with conductive trench filling material in electrical contact with the source region near the top surface. The semiconductor power device further comprises buried P-regions disposed below the source trenches and doped with dopants of opposite conductivity from the highly doped region. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. | 10-30-2014 |
20140363946 | LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR (TVS) WITH REDUCED CLAMPING VOLTAGE - A low capacitance transient voltage suppressor with reduced clamping voltage includes an n+ type substrate, a first epitaxial layer on the substrate, a buried layer formed within the first epitaxial layer, a second epitaxial layer on the first epitaxial layer, and an implant layer formed within the first epitaxial layer below the buried layer. The implant layer extends beyond the buried layer. A first trench is at an edge of the buried layer and an edge of the implant layer. A second trench is at another edge of the buried layer and extends into the implant layer. Each trench is lined with a dielectric layer. A set of source regions is formed within a top surface of the second epitaxial layer. The trenches and source regions alternate. A pair of implant regions is formed in the second epitaxial layer. | 12-11-2014 |
20150035003 | DUAL TRENCH-GATE IGBT STRUCTURE - Aspects of the present disclosure describe an IGBT device including a substrate including a bottom semiconductor layer of a first conductivity type and an upper semiconductor layer of a second conductivity type, at least one first gate formed in a corresponding first trench disposed over the substrate, and a second gate formed in a second trench disposed over the bottom semiconductor layer. The first and second trenches are provided with gate insulators on each side of the trenches and filled with polysilicon. The second trench extends vertically to depth deeper than the at least one first trench. The IGBT device further includes a body region of the first conductivity type provided between the at least one first gate and/or the second gate, and at least one stacked layer provided between a bottom of the at least one first gate and a top of the upper semiconductor layer. The at least one stacked layer includes a floating body region of the second conductivity type provided on top of a floating body region of the first conductivity type. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. | 02-05-2015 |
20150137175 | CHARGE RESERVOIR IGBT TOP STRUCTURE - An IGBT device includes one or more trench gates disposed over a semiconductor substrate and a floating body region of the first conductivity type disposed between two neighboring trench gates and between a semiconductor substrate and a heavily doped top region of the second conductivity type. A body region of the first conductivity type disposed over the top region has a doping concentration higher than that of the floating body region of the first conductivity type. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. | 05-21-2015 |
20150349101 | INJECTION CONTROL IN SEMICONDUCTOR POWER DEVICES - Semiconductor power devices can be formed on substrate structure having a lightly doped semiconductor substrate of a first conductivity type or a second conductivity type opposite to the first conductivity type. A semiconductive first buffer layer of the first conductivity type formed above the substrate. A doping concentration of the first buffer layer is greater than a doping concentration of the substrate. A second buffer layer of the second conductivity type formed above the first buffer layer. An epitaxial layer of the second conductivity type formed above the second buffer layer. A doping concentration of the epitaxial layer is greater than a doping concentration of the second buffer layer. This abstract is provided to allow a searcher or reader to quickly ascertain the subject matter of the disclosure with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. | 12-03-2015 |
20150357450 | CHARGE RESERVOIR IGBT TOP STRUCTURE - An IGBT device may be formed from a substrate including a bottom semiconductor layer of a first conductivity and an upper semiconductor layer of a second conductivity type located above the bottom semiconductor layer. Trenches for trench gates are formed in the substrate. Each trench extends vertically into the upper semiconductor layer and is provided with a gate insulator on each side of the trench and is filled with polysilicon. A first conductivity type floating body region is formed between two neighboring trenches and over the substrate. A bottom of the floating body region is close in depth to but above a bottom of the polysilicon in the trench. A heavily doped second conductivity type top region is formed over the floating body region. A first conductivity type body region is formed over the top region. The floating body region has a lower doping concentration than the body region. | 12-10-2015 |
20150372129 | HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM) - A semiconductor device includes a semiconductor substrate of a first conductivity type. A first conductivity type epitaxial layer disposed on a top surface of the substrate includes a surface shielded region above a less heavily doped voltage blocking region. A body region of a second conductivity type opposite the first conductivity type is disposed near a top surface of the surface shielded region. A first conductivity type source region is disposed near the top surface inside the body region. A drain is disposed at a bottom surface of the substrate. A gate overlaps portions of the source and body regions. Gate insulation separates the gate from the source and body regions. First and second trenches formed in the surface shielded region are lined with trench insulation material and filled with electrically conductive trench filling material. Second conductivity type buried doped regions are positioned below the first and second trenches, respectively. | 12-24-2015 |