Patent application number | Description | Published |
20080305602 | Transistor Manufacture - An oxide layer is formed on material defining and surrounding an emitter window. The technique comprises depositing a non-conformal oxide layer on the surrounding material and in the emitter window, whereby the thickness of at least a portion of the oxide layer in the emitter window is smaller than the thickness of the oxide layer on the surrounding material outside the emitter window; and removing at least a portion of the oxide layer in the emitter window so as to reveal at least a portion of the bottom of the emitter window whilst permitting at least a portion of the oxide layer to remain on the surrounding material. The technique can be used in the manufacture of a self-aligned epitaxial base BJT (bipolar junction transistor) or SiGe HBT (hetero junction bipolar transistor). | 12-11-2008 |
20120255354 | HUMIDITY MEASUREMENT DEVICE AND METHOD - A humidity measurement device comprises a capacitance measurement unit ( | 10-11-2012 |
20130307122 | BIPOLAR TRANSISTOR WITH EMBEDDED EPITAXIAL EXTERNAL BASE REGION AND METHOD OF FORMING THE SAME - The present invention discloses a bipolar transistor with an embedded epitaxial external base region, which is designed to solve the problem of the TED effect with the prior art structures. The bipolar transistor with an embedded epitaxial external base region of the present invention comprises at least a collector region, a base region and an external base region on the collector region, an emitter on the base region, and sidewalls at both sides of the emitter. The external base region is grown through an in-situ doping selective epitaxy process and is embedded in the collector region. A portion of the external base region is located beneath the sidewalls. The present invention discloses a method of forming a bipolar transistor with an embedded epitaxial external base region. The bipolar transistor with an embedded epitaxial external base region of the present invention avoids the TED effect and reduces the resistance of the external base region of the device so that the performance of the device is improved. The method of forming a bipolar transistor with an embedded epitaxial external base region of the present invention achieves the aforesaid bipolar transistor with an embedded epitaxial external base region, and features concise steps, a low cost and simple operations, and the structure obtained has good performance. | 11-21-2013 |
20130313614 | METAL SILICIDE SELF-ALIGNED SiGe HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD OF FORMING THE SAME - The present invention discloses a metal silicide self-aligned SiGe heterojunction bipolar transistor, which is designed to overcome the shortcomings such as the large base resistance R | 11-28-2013 |
20140175520 | METAL SILICIDE SELF-ALIGNED SiGe HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD OF FORMING THE SAME - The present invention discloses a metal silicide self-aligned SiGe heterojunction bipolar transistor, which is designed to overcome the shortcomings such as the large base resistance R | 06-26-2014 |
20140329368 | BIPOLAR TRANSISTOR WITH EMBEDDED EPITAXIAL EXTERNAL BASE REGION AND METHOD OF FORMING THE SAME - The present invention discloses a bipolar transistor with an embedded epitaxial external base region, which is designed to solve the problem of the TED effect with the prior art structures. The bipolar transistor with an embedded epitaxial external base region of the present invention comprises at least a collector region, a base region and an external base region on the collector region, an emitter on the base region, and sidewalls at both sides of the emitter. The external base region is grown through an in-situ doping selective epitaxy process and is embedded in the collector region. A portion of the external base region is located beneath the sidewalls. The present invention discloses a method of forming a bipolar transistor with an embedded epitaxial external base region. The bipolar transistor with an embedded epitaxial external base region of the present invention avoids the TED effect and reduces the resistance of the external base region of the device so that the performance of the device is improved. The method of forming a bipolar transistor with an embedded epitaxial external base region of the present invention achieves the aforesaid bipolar transistor with an embedded epitaxial external base region, and features concise steps, a low cost and simple operations, and the structure obtained has good performance. | 11-06-2014 |
20140335005 | METHOD OF REMOVING SULFUR OXIDES AND NITROGEN OXIDES IN THE FLUE GAS - The present invention discloses a method of removing sulfur oxides and/or nitrogen oxides in a regeneration flue gas emitted from a regenerator of a catalytic cracking plant and recovering the elemental sulfur and an apparatus therefor. | 11-13-2014 |
20150115158 | PHOTOELECTRIC-TYPE CONTINUOUS LIQUID LEVEL MEASUREMENT METHOD AND DEVICE - A photoelectric-type continuous liquid level measurement method is applied to a photoelectric-type continuous liquid level measurement device which comprises at least one sensor module formed by cascading a plurality of sensors, and comprises: driving the sensors one by one from bottom to top to take a liquid level measurement; after detecting the light intensity of a detection light returned from the position where the sensors are located, the sensors which are currently in a driving state conducting analogue-to-digital conversion on a voltage value corresponding to the detected light intensity to obtain current analogue-to-digital conversion data; according to the correlation between a preset liquid level and the analogue-to-digital conversion data, determining the liquid level of the position where the sensors are located; and summarizing to a transmitter module the liquid level measured by each of the sensors to obtain the total liquid level of a currently measured. | 04-30-2015 |