Patent application number | Description | Published |
20100117095 | GaN-Based Device Cascoded with an Integrated FET/Schottky Diode Device - A power semiconductor device is provided that includes a depletion mode (normally ON) main switching device cascoded with a higher speed switching device, resulting in an enhancement mode (normally OFF) FET device for switching power applications. The main switching device comprises a depletion mode GaN-based HEMT (High Electron Mobility Transistor) FET that does not include an intrinsic body diode. In one or more embodiments, the higher speed switching device comprises a high speed FET semiconductor switch arranged or connected in parallel with a Schottky diode. The high speed FET semiconductor switch may comprise a Si FET, GaN FET or any other type of FET which possesses higher speed switching capabilities and a lower voltage than that of the GaN-based HEMT FET. In some embodiments, the GaN-based HEMT FET and the higher speed switching device (i.e., the FET and Schottky diode) may be monolithically integrated on the same substrate. | 05-13-2010 |
20160079785 | BOOTSTRAP CAPACITOR CHARGING CIRCUIT FOR GAN DEVICES - GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits. | 03-17-2016 |
20160079844 | HALF BRIDGE POWER CONVERSION CIRCUITS USING GAN DEVICES - GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits. | 03-17-2016 |
20160079853 | INTEGRATED BIAS SUPPLY, REFERENCE AND BIAS CURRENT CIRCUITS FOR GAN DEVICES - GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits. | 03-17-2016 |
20160079854 | GaN CIRCUIT DRIVERS FOR GaN CIRCUIT LOADS - An electronic circuit is disclosed. The electronic circuit includes a substrate having GaN, and a power switch formed on the substrate and including a first control gate and a first source. The electronic circuit also includes a drive circuit formed on the substrate and including an output coupled to the first control gate, and a power supply having a supply voltage and coupled to the drive circuit, where the output can be driven to the supply voltage. | 03-17-2016 |
20160079964 | INTEGRATED LEVEL SHIFTER - GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits. | 03-17-2016 |
20160079975 | HALF BRIDGE DRIVER CIRCUITS - GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. | 03-17-2016 |
20160079978 | LEVEL SHIFT AND INVERTER CIRCUITS FOR GAN DEVICES - GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits. | 03-17-2016 |
20160079979 | PULSED LEVEL SHIFT AND INVERTER CIRCUITS FOR GAN DEVICES - GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits. | 03-17-2016 |
20160099647 | Zero Voltage Soft Switching Scheme for Power Converters - A control scheme and architecture for a power conversion circuit employs two bidirectional switches and a zero voltage switching (ZVS) scheme for the high-side switch. Methods of incorporating the control scheme into multiple power conversion circuit topologies are disclosed. Methods of device integration including co-packaging and monolithic fabrication are also disclosed. | 04-07-2016 |