Patent application number | Description | Published |
20100276796 | REWORKABLE ELECTRONIC DEVICE ASSEMBLY AND METHOD - An electronic device assembly is provided which includes a substrate, an interposer and an integrated circuit chip. The substrate is fabricated of a first material having a first thermal expansivity, and the interposer and integrated circuit chip are fabricated of a second material having a second thermal expansivity. The second thermal expansivity is different from the first thermal expansivity so that there is a coefficient of thermal expansion mismatch between the substrate and the interposer or chip. The interposer is coupled to the substrate via a first plurality of electrical contacts and an underfill adhesive at least partially surrounding the electrical contacts to bond the interposer to the substrate and thereby reduce strain on the first plurality of electrical contacts. The integrated circuit chip is coupled to the interposer via a second plurality of electrical contacts only, without use of an adhesive surrounding the second plurality of electrical contacts. | 11-04-2010 |
20110042795 | Three-Dimensional Silicon Interposer for Low Voltage Low Power Systems - Scalable silicon (Si) interposer configurations that support low voltage, low power operations are provided. In one aspect, a Si interposer is provided which includes a plurality of through-silicon vias (TSVs) within a first plane thereof adapted to serve as power, ground and signal interconnections throughout the first plane such that the TSVs that serve as the power and ground interconnections are greater in number and/or size than the TSVs that serve as the signal interconnections; and a plurality of lines within a second plane of the interposer in contact with one or more of the TSVs in the first plane, the second plane being adjacent to the first plane, adapted to serve as power, ground and signal interconnections throughout the second plane such that the lines that serve as the power and the ground interconnections are greater in number and/or size than the lines that serve as the signal interconnections. | 02-24-2011 |
20140103499 | ADVANCED HANDLER WAFER BONDING AND DEBONDING - A method for processing a semiconductor wafer includes applying a release layer to a transparent handler. An adhesive layer, that is distinct from the release layer, is applied between a semiconductor wafer and the transparent handler having the release layer applied thereon. The semiconductor wafer is bonded to the transparent handler using the adhesive layer. The semiconductor wafer is processed while it is bonded to the transparent handler. The release layer is ablated by irradiating the release layer through the transparent handler with a laser. The semiconductor wafer is removed from the transparent handler. | 04-17-2014 |
20140106473 | ADVANCED HANDLER WAFER BONDING AND DEBONDING - A method for processing a semiconductor wafer includes applying a release layer to a transparent handler. An adhesive layer, that is distinct from the release layer, is applied between a semiconductor wafer and the transparent handler having the release layer applied thereon. The semiconductor wafer is bonded to the transparent handler using the adhesive layer. The semiconductor wafer is processed while it is bonded to the transparent handler. The release layer is ablated by irradiating the release layer through the transparent handler with a laser. The semiconductor wafer is removed from the transparent handler. | 04-17-2014 |
20150035173 | ADHESIVES FOR BONDING HANDLER WAFERS TO DEVICE WAFERS AND ENABLING MID-WAVELENGTH INFRARED LASER ABLATION RELEASE - Methods are provided to form adhesive materials that are used to temporarily bond handler wafers to device wafers, and which enable mid-wavelength infrared laser ablation release techniques to release handler wafers from device wafers. | 02-05-2015 |
20150035554 | WAFER DEBONDING USING MID-WAVELENGTH INFRARED RADIATION ABLATION - Structures and methods are provided for temporarily bonding handler wafers to device wafers using bonding structures that include one or more releasable layers which are laser-ablatable using mid-wavelength infrared radiation | 02-05-2015 |
20150229295 | THREE-D POWER CONVERTER IN THREE DISTINCT STRATA - A switching power supply in an integrated circuit, an integrated circuit comprising a switching power supply, and a method of assembling a switching power supply in an integrated circuit are disclosed. In one embodiment, the invention provides a three-dimensional switching power supply in an integrated circuit comprising a device layer. The switching power supply comprises three distinct strata arranged in series with the device layer, the three distinct strata including a switching layer including switching circuits, a capacitor layer including banks of capacitors, and an inductor layer including inductors. This switching power supply further comprises a multitude of connectors electrically and mechanically connecting together the device layer, the switching layer, the capacitor layer, and the inductor layer. The switching circuits, the capacitors and the inductors form a switching power supply for supplying power to the device layer. | 08-13-2015 |
20160084876 | TEST PROBE SUBSTRATE - A test probe structure having a planar surface and contact locations matched to test hardware is provided. The fabrication of the test probe structure addresses problems related to the possible deformation of base substrates during manufacture. Positional accuracy of contact locations and planarity of base substrates is achieved using dielectric layers, laser ablation, injection molded solder or redistribution layer wiring, and planarization techniques. | 03-24-2016 |