Patent application number | Description | Published |
20080241355 | THIN FILM TRANSISTOR DEVICES HAVING HIGH ELECTRON MOBILITY AND STABILITY - Methods for depositing a gate insulator layer and a semiconductor layer onto a large area substrate with improved film uniformity, device mobility and stability are provided. The film properties of the gate insulator layer and the semiconductor layer are selected so that higher electron mobility (greater than 0.7 centimeters squared per voltage per second) is obtained, thereby efficiently enhancing the performance and stability of TFT devices. Improvements in film uniformity may also be realized. | 10-02-2008 |
20080258091 | FLOATING SLIT VALVE FOR TRANSFER CHAMBER INTERFACE - The present invention generally comprises a floating slit valve for interfacing with a chamber. A floating slit valve moves or “floats” relative to another object such as a chamber. The slit valve may be coupled between two chambers. When a chamber coupled with the slit valve is heated, the slit valve may also be heated by conduction. As the slit valve is heated, it may thermally expand. When a vacuum is drawn in a chamber, the slit valve may deform due to vacuum deflection. By disposing a low friction material spacer between the chamber and the slit valve, the slit valve may not rub against the chamber during thermal expansion/contraction and/or vacuum deflection and thus, may not generate undesirable particle contaminants. Additionally, slots drilled through the chamber for coupling the slit valve to the chamber may be sized to accommodate thermal expansion/contraction and vacuum deflection of the slit valve. | 10-23-2008 |
20080259101 | METHODS AND APPARATUS FOR MINIMIZING THE NUMBER OF PRINT PASSES IN FLAT PANEL DISPLAY MANUFACTURING - A system for inkjet printing includes a first set including a first inkjet print head having a first plurality of nozzles adapted to selectively dispense a first ink, and a second inkjet print head having a second plurality of nozzles adapted to selectively dispense a second ink; a second set including a third inkjet print head having a third plurality of nozzles adapted to selectively dispense a third ink and a fourth inkjet print head having a fourth plurality of nozzles adapted to selectively dispense a fourth ink; and a stage adapted to support the substrate and transport the substrate below the first and second sets during a printing pass; wherein the first set is adapted to dispense the first and second inks into respective adjacent color wells of a display pixel on a substrate and the second set is adapted to dispense the third and fourth inks into respective adjacent color wells of a display pixel on a substrate. | 10-23-2008 |
20080268175 | Method of controlling film uniformity of a cvd-deposited silicon nitride film during deposition over a large substrate surface - We have discovered that adding H | 10-30-2008 |
20080268176 | Method of improving the uniformity of PECVD-deposited thin films - We have discovered that controlling a combination of PECVD deposition process parameters during deposition of silicon-containing thin film provides improved control over surface standing wave effects. By minimizing surface standing wave effects, the uniformity of film properties (particularly film thickness) across a substrate surface onto which the films have been deposited is improved. | 10-30-2008 |
20080276868 | RIGID RF TRANSMISSION LINE WITH EASY REMOVAL SECTION - An RF feed for a processing apparatus is disclosed. Coupling an RF generator to an RF matching network by a rigid RF feed lessens the amount of power that is lost during transmission from the generator to the matching network. The rigid RF feed comprises an inverted J shaped section that decouples the generator from the matching network whenever servicing the chamber is necessary. The J shape section has two parallel portions coupled together by a perpendicular portion. The J shaped section may be removed as a one piece assembly by uncoupling the J shaped section at a location disposed near the top of the chamber and a location near the floor of the chamber. The connections between the J shaped section and the remainder of the RF feed face the same direction to ensure easy coupling and decoupling without twisting and/or bending any portion of the rigid RF feed. | 11-13-2008 |
20080282982 | APPARATUS AND METHOD FOR DEPOSITION OVER LARGE AREA SUBSTRATES - The present invention generally relates to an inductively coupled plasma apparatus. When depositing utilizing a plasma generated from a showerhead, the plasma may not be evenly distributed to the edge of the substrate. By inductively coupling plasma to the chamber in an area corresponding to the chamber walls, the plasma distribution within the chamber may be evenly distributed and deposition upon the substrate may be substantially even. By vaporizing the processing gas prior to entry into the processing chamber, the plasma may also be even and thus contribute to an even deposition on the substrate. | 11-20-2008 |
20080291228 | METHODS AND APPARATUS FOR INKJET PRINTING WITH MULTIPLE ROWS OF PRINT HEADS - According to the present invention, multiple rows of nozzles within a print head may be arranged proximal to and offset from each other to facilitate inkjet printing. Print heads may comprise a single row of nozzles or may comprise a plurality of rows of nozzles. Each row of nozzles may be situated such that the immediately adjacent row of nozzles may be offset by a predetermined distance. In some embodiments, adjacent rows of nozzles may each print with the same color. In this way, adjacent offset rows of nozzles may be used in combination to dispense ink drops into sub-pixel wells in improved patterns and with improved ink distribution within the sub-pixel well. These offset print techniques may also enable tighter grouping of ink drops within a sub-pixel well and enable faster printing operations. | 11-27-2008 |
20080296142 | SWINGING MAGNETS TO IMPROVE TARGET UTILIZATION - A method and apparatus for uniformly eroding a sputtering target is disclosed. As a racetrack shaped magnetic field formed by a magnetron moves across the sputtering surface of the sputtering target, one or more magnets within the magnetron may swing or pivot relative to other magnets within the magnetron to reduce magnetic field pinching at the turns in the racetrack shaped magnetic field. The swinging or pivoting magnets alter the location on the magnetic field at a turn in the racetrack shape where the coordinate of the magnetic field perpendicular to the sputtering surface equals zero. By altering the location, sputtering target erosion uniformity may be increased. | 12-04-2008 |
20080302303 | METHODS AND APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM WITH FLOW GRADIENT DESIGNS - Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes. | 12-11-2008 |
20080305246 | APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM AND METHODS FOR MANUFACTURING THE SAME - Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate. | 12-11-2008 |
20080309715 | METHODS AND APPARATUS FOR DEPOSITING INK ONTO SUBSTRATES - Embodiments of an ink jet printing system include a motion stage adapted to move a substrate having a display object in a printing direction and a first printing assembly mounted over the motion stage including a set of print heads aligned and arranged consecutively in the printing direction such that the display object moves under the print heads sequentially. Embodiments of a method of ink jet printing include moving a substrate under the print heads of printing assembly sequentially in a printing direction, activating alternate ink jetting channels within each print head of the first printing assembly, activating corresponding channels within adjacent print heads in the first printing assembly alternately, and depositing ink in alternating sub-pixels within one or more pixels on the substrate. | 12-18-2008 |
20080317973 | DIFFUSER SUPPORT - Embodiments of gas distribution apparatus comprise a diffuser support member coupled to a diffuser and moveably disposed through a backing plate. Embodiments of methods of processing a substrate on a substrate receiving surface of a substrate support comprise providing a diffuser in which a diffuser support member supports the diffuser and is moveably disposed through the backing plate. | 12-25-2008 |
20090000551 | METHODS AND APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM WITH FLOW GRADIENT DESIGNS - Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes. | 01-01-2009 |
20090007846 | DIFFUSER GRAVITY SUPPORT - An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gases through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed. | 01-08-2009 |
20090022905 | RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS - In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design. | 01-22-2009 |
20090022908 | PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION TECHNOLOGY FOR LARGE-SIZE PROCESSING - Methods for forming a film stack suitable for transistor fabrication using a low temperature plasma enhanced chemical vapor deposition (PECVD) process are provided. In one embodiment, the method includes providing a substrate in a PECVD chamber, depositing a dual layer SiNx film on the substrate, depositing a dual layer amorphous silicon film on the SiNx film, and depositing a n-doped silicon film on the dual layer amorphous silicon film. The aforementioned films are deposited at a temperature less than about 300 degrees Celsius in the same PECVD chamber | 01-22-2009 |
20090053847 | METHODS AND APPARATUS FOR DEPOSITING A MICROCRYSTALLINE SILICON FILM FOR PHOTOVOLTAIC DEVICE - Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, a photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent. | 02-26-2009 |
20090056743 | METHOD OF CLEANING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION CHAMBER - A method and apparatus for cleaning a plasma enhanced chemical vapor deposition chamber is described. In one embodiment, the method includes providing a first cleaning gas to a processing region within the chamber; and then providing a second cleaning gas to the processing region. In another embodiment, the method includes providing a substantially pure fluorine gas to a processing chamber. | 03-05-2009 |
20090060687 | TRANSFER CHAMBER WITH ROLLING DIAPHRAGM - Embodiments of the invention include a vacuum transfer chamber having one rolling or more rolling diaphragm providing a seal between a robot disposed in the transfer chamber and the transfer chamber and a method for using a substrate transfer chamber having the same. | 03-05-2009 |
20090064934 | SOURCE GAS FLOW PATH CONTROL IN PECVD SYSTEM TO CONTROL A BY-PRODUCT FILM DEPOSITION ON INSIDE CHAMBER - The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput. | 03-12-2009 |
20090071403 | PECVD PROCESS CHAMBER WITH COOLED BACKING PLATE - The invention generally relates to a plasma enhanced chemical vapor deposition chamber for depositing amorphous or microcrystalline silicon on a glass substrate to fabricate solar voltaic cells. The chamber includes a backing plate having at least one fluid receiving conduit to receive cooling fluid to remove heat generated within the chamber by the plasma, thereby stabilizing and cooling the backing plate to assure the uniformity of deposition of materials on the surface of the substrate. | 03-19-2009 |
20090071406 | COOLED BACKING PLATE - A plasma enhanced chemical vapor deposition chamber (PECVD) which includes a backing plate that provides support to a diffuser. The backing plate includes a plurality of fluid conduits adapted for circulation of a cooling fluid therethrough to remove excess heat generated in the chamber by the plasma to thereby maintain the backing plate in a stable condition thereby maintaining the diffuser in a stable position during the deposition of material from the plasma. | 03-19-2009 |
20090077804 | PRODUCTION LINE MODULE FOR FORMING MULTIPLE SIZED PHOTOVOLTAIC DEVICES - The present invention generally relates to a sectioning module positioned within an automated solar cell device fabrication system. The solar cell device fabrication system is adapted to receive a single large substrate and form multiple silicon thin film solar cell devices from the single large substrate. | 03-26-2009 |
20090077805 | PHOTOVOLTAIC PRODUCTION LINE - The present invention generally relates to a system that can be used to form a photovoltaic device, or solar cell, using processing modules that are adapted to perform one or more steps in the solar cell formation process. The automated solar cell fab is generally an arrangement of automated processing modules and automation equipment that is used to form solar cell devices. The automated solar fab will thus generally comprise a substrate receiving module that is adapted to receive a substrate, one or more absorbing layer deposition cluster tools having at least one processing chamber that is adapted to deposit a silicon-containing layer on a surface of the substrate, one or more back contact deposition chambers, one or more material removal chambers, a solar cell encapsulation device, an autoclave module, an automated junction box attaching module, and one or more quality assurance modules that are adapted to test and qualify the completely formed solar cell device. | 03-26-2009 |
20090101069 | RF RETURN PLATES FOR BACKING PLATE SUPPORT - Embodiments of the present invention generally comprise an RF return plate for use in an apparatus that utilizes RF current. Whenever a backing plate is so large that a backing plate support structure is needed to prevent the backing plate from sagging, RF current that flows across the backing plate towards the showerhead may be partially diverted and flow up the support structure. The RF current that flows up the support structure puts an unwanted bias on the support structure and also contributes to reduction of the RF current flowing to the showerhead. By returning the RF current to the source, the amount of RF current that may flow up the support structure may be reduced. An RF return plate may be disposed between the chamber lid and the support structure to redirect any RF current that may flow up the support structure back down to the chamber lid. | 04-23-2009 |
20090101201 | NIP-NIP THIN-FILM PHOTOVOLTAIC STRUCTURE - A thin film multi-junction photovoltaic structure is presented as well as methods and apparatus for forming the same. The photovoltaic structure comprises first and second NIP junctions formed over a translucent substrate. | 04-23-2009 |
20090104376 | GAS DIFFUSION SHOWER HEAD DESIGN FOR LARGE AREA PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a right cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the right cylindrical portion and the downstream end of the conical portion having a larger diameter. The gas distribution plate is relatively easy to manufacture and provides good chamber cleaning rate, good thin film deposition uniformity and good thin film deposition rate. The gas distribution plate also has the advantage of reduced chamber cleaning residues on the diffuser surface and reduced incorporation of the cleaning residues in the thin film being deposited. | 04-23-2009 |
20090104732 | CVD PROCESS GAS FLOW, PUMPING AND/OR BOOSTING - The present invention generally comprises a method and apparatus for supplemental pumping, gas feed, and/or RF current for a process. When depositing amorphous silicon, the amount of process gases, RF current, and vacuum may be less than the amount of process gases, RF current, and vacuum necessary to deposit microcrystalline silicon. When a single chamber is used to deposit both amorphous and microcrystalline silicon, coupling a supplemental power supply, a supplemental gas source, and a supplemental vacuum pump to the chamber may be beneficial. The supplemental power supply, vacuum pump, and gas source, may be coupled with the chamber when the microcrystalline silicon is deposited and uncoupled when amorphous silicon is deposited. In a cluster tool arrangement, the supplemental power supply, vacuum pump, and gas source may serve multiple chambers that each deposit both amorphous and microcrystalline silicon. | 04-23-2009 |
20090107955 | OFFSET LINER FOR CHAMBER EVACUATION - The present invention generally includes a chamber liner spaced from a chamber wall to permit processing gases to be pulled between the chamber liner and the chamber wall when withdrawing gases from the processing chamber. When the vacuum pump is below the susceptor, processing gases will be drawn below the susceptor and may lead to undesired deposition onto process chamber components. Additionally, the processing gases will be pulled past the slit valve opening and potentially deposit within the slit valve opening. When material deposits in the slit valve opening, flaking may occur and contaminate the substrates. By drawing the processing gases along the sidewalls other than the one having the slit valve opening therethrough, undesired deposition on the slit valve opening may be reduced. | 04-30-2009 |
20090114153 | METHOD AND APPARATUS FOR SEALING AN OPENING OF A PROCESSING CHAMBER - A method and apparatus for sealing an opening of a processing chamber are provided. In one embodiment, the invention generally provides a closure member integrated within a wall of a process chamber for sealing an opening within the wall of the chamber. In another embodiment, the invention provides a closure member configured to seal an opening in the wall of a processing chamber from the inside of the chamber. | 05-07-2009 |
20090122099 | METHODS AND SYSTEMS FOR CALIBRATION OF INKJET DROP POSITIONING - Methods and apparatus for inkjet drop positioning are provided. A first method includes determining an intended deposition location of an ink drop on a substrate, depositing the ink drop on the substrate using an inkjet printing system, detecting a deposited location of the deposited ink drop on the substrate, comparing the deposited location to the intended location, determining a difference between the deposited location and the intended location, and compensating for the difference between the deposited location and the intended location by adjusting a parameter of an inkjet printing system. Numerous other aspects are provided. | 05-14-2009 |
20090135348 | METHODS AND APPARATUS FOR FORMING COLOR FILTER ON ARRAY FLAT PANEL DISPLAYS - The present invention provides a self-aligned color filter on array substrate made with a minimum number of masks. The invention includes forming opaque features on a substrate wherein the opaque features include circuit features, applying a pixel matrix material to the substrate, and applying an activation energy to portions of the pixel matrix material through the substrate using the opaque features as a mask. Numerous other aspects are provided. | 05-28-2009 |
20090146264 | THIN FILM TRANSISTOR ON SODA LIME GLASS WITH BARRIER LAYER - The present invention generally comprises a low cost TFT and a method of manufacturing a TFT. For TFTs, soda lime glass would be an attractive alternative to non-alkali glass, but a soda lime glass substrate will permit sodium to diffuse into the active layer and degrade the performance of the TFT. Substrates comprising a polyimide, because they are flexible, would also be attractive to utilize instead of non-alkali glass substrates, but the plastic substrates permit carbon to diffuse into the active layer. By depositing a silicon rich barrier layer over the soda lime glass substrate or substrate comprising a polyimide, both sodium and carbon diffusion may be reduced. Thus, a lower cost TFT may be produced with a soda lime glass substrate or a substrate comprising a polyimide as compared to a non-alkali glass substrate. | 06-11-2009 |
20090151636 | RPSC AND RF FEEDTHROUGH - The present invention generally comprises an apparatus having an RF choke and a remote plasma source combined into a single unit. Process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube may provide process gases and the cleaning gases to the process chamber. The inside of the gas feed tube may remain at a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead during processing. Igniting the cleaning gas plasma within the gas feed tube permits the plasma to be ignited closer to the processing chamber. Thus, RF current travels along the outside of the apparatus during deposition and microwave current ignites a plasma within the apparatus before feeding the plasma to the processing chamber. | 06-18-2009 |
20090159423 | Asymmetrical RF Drive for Electrode of Plasma Chamber - RF power is coupled to one or more RF drive points ( | 06-25-2009 |
20090178617 | RF GROUNDING OF CATHODE IN PROCESS CHAMBER - An apparatus for providing a short return current path for RF current between a process chamber wall and a substrate support is provided. The RF grounding apparatus, which is RF grounded and is place above the substrate transfer port, establishes electrical contact with the substrate support only during substrate processing, such as deposition, to provide return current path for the RF current. One embodiment of the RF grounding apparatus comprises one or more low impedance flexible curtains, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Another embodiment of the RF grounding apparatus comprises a plurality of low impedance flexible straps, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Yet another embodiment of the RF grounding apparatus comprises a plurality of probes, which either are electrically connected to the grounded chamber wall or are grounded by other means, and actuators accompanying the probes. The actuators move the probes to make electrical contact with the substrate support during substrate processing. | 07-16-2009 |
20090184990 | METHODS AND APPARATUS FOR MEASURING DEPOSITED INK IN PIXEL WELLS ON A SUBSTRATE USING A LINE SCAN CAMERA - Systems and methods for measuring deposited ink in a substrate are provided. The invention includes a light source adapted to transmit light through a deposited ink on a substrate, and a camera having a CCD sensor array wherein the camera is adapted to measure the amount of light that is transmitted through the deposited ink. Numerous other aspects are provided. | 07-23-2009 |
20090185186 | SYSTEMS AND METHODS FOR IMPROVING MEASUREMENT OF LIGHT TRANSMITTANCE THROUGH INK DEPOSITED ON A SUBSTRATE - Systems, methods and apparatus for manufacturing color filters for flat panel displays are provided that include an inkjet printing system integrated with a light transmittance measurement system. The inkjet printing system includes a stage for supporting and moving a substrate past inkjet print heads adapted to deposit ink in pixel wells on the substrate. The light transmittance measurement system includes a sensor and a light source disposed on opposite sides of the substrate and adapted to determine the thickness of the ink deposited on the substrate. The light source is adapted to move with the sensor to allow different pixel wells containing deposited ink to be measured, and the stage includes at least one optical path to allow light from the light source to pass through the deposited ink to the sensor. | 07-23-2009 |
20090195262 | IN-LINE ELECTRON BEAM TEST SYSTEM - A method and apparatus for testing a plurality of electronic devices formed on a large area substrate is described. In one embodiment, the apparatus performs a test on the substrate in one linear axis in at least one chamber that is slightly wider than a dimension of the substrate to be tested. Clean room space and process time is minimized due to the smaller dimensions and volume of the system. | 08-06-2009 |
20090197015 | METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY - Systems, methods, and apparatus involve a plasma processing chamber for depositing a film on a substrate. The plasma processing chamber includes a lid assembly having a ground plate, a backing plate, and a non-uniformity existing between the ground plate and the backing plate. The non-uniformity may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate and backing plate. The non-uniformity may include a structure or a reduced spacing of non-uniform surfaces. A reduced spacing of non-uniform surfaces may exist where a first distance between the ground plate and the backing plate at a first end is different from a second distance between the ground plate and the backing plate at a second end. The structure may be from 2 cm to 10 cm thick, cover from 20% to 50% of the backing plate, and be located away from a discontinuity existing inside the chamber. | 08-06-2009 |
20090202741 | Multiple Phase RF Power for Electrode of Plasma Chamber - RF power is coupled with different phase offsets to different RF connection points on an electrode of a plasma chamber. Preferably, the number of different RF connection points and corresponding phase offsets is at least four, and the positions of the RF connection points are distributed along two orthogonal dimensions of the electrode. Preferably, power to each respective RF connection point is supplied by a respective RF power supply, wherein each power supply synchronizes its phase to a common reference RF oscillator. | 08-13-2009 |
20090208668 | FORMATION OF CLEAN INTERFACIAL THIN FILM SOLAR CELLS - A “three” chamber design multi-chamber cluster processing system which is used in the fabrication of a solar cell-comprising substrate. The processing system includes at least one PECVD processing chamber configured to deposit a p-doped layer, at least three PECVD processing chambers configured to deposit an i-layer, and at least one PECVD processing chamber configured to deposit an n-doped layer. The processing system also includes at least one central substrate transferring chamber which is typically located substantially equidistant from each of the PECVD processing chambers, and a transfer robot present in the central transferring chamber which is capable of paired transfer of substrates. An apparatus which provides a source of fluorine-comprising reactive species is in communication with each of said PECVD processing chambers. | 08-20-2009 |
20090230425 | WATER-BARRIER ENCAPSULATION METHOD - The present invention generally relates to organic light emitting diode (OLED) structures and methods for their manufacture. To increase the lifetime of an OLED structure, an encapsulating layer may be deposited over the OLED structure. The encapsulating layer may fully enclose or “encapsulate” the OLED structure. The encapsulating layer may have a substantially planar surface opposite to the interface between the OLED structure and the encapsulating layer. The planar surface permits successive layers to be evenly deposited over the OLED structure. The encapsulating layer reduces any oxygen penetration into the OLED structure and may increase the lifetime of the OLED structure. | 09-17-2009 |
20090233387 | LINEAR PLASMA SOURCE FOR DYNAMIC (MOVING SUBSTRATE) PLASMA PROCESSING - The present invention generally relates to a method and apparatus for depositing a layer onto a substrate as the substrate is moving through the processing chamber. The substrate may move along a roll to roll system. A roll to roll system is a system where a substrate may be unwound from a first roll so that the substrate may undergo processing and then re-wound onto a second roll after the processing. As the substrate moves through the processing chamber, a plasma source may produce a plasma. An electrical bias applied to the substrate may draw the plasma to the substrate and hence, permit deposition of material onto the substrate as the substrate moves through the chamber. | 09-17-2009 |
20090238734 | SUSCEPTOR WITH ROLL-FORMED SURFACE AND METHOD FOR MAKING SAME - The present invention generally provides apparatus for supporting a large area substrate in a plasma reactor. One embodiment, a substrate support for using in a plasma reactor includes an electrically conductive body has a top surface with a plurality of roll-formed indents. | 09-24-2009 |
20090238972 | METHODS AND APPARATUS FOR USING REDUCED PURITY SILANE TO DEPOSIT SILICON - In one aspect, a method of forming a silicon layer on a substrate is provided, including the steps providing a substrate; and introducing hydrogen and silane into a chamber containing the substrate such that a layer of silicon is deposited on the substrate; wherein the silane is less than about 99.999% pure. Numerous other aspects are provided. | 09-24-2009 |
20090251504 | SYSTEMS AND METHODS FOR WET IN-SITU CALIBRATION USING MEASUREMENT OF LIGHT TRANSMITTANCE THROUGH INK DEPOSITED ON A SUBSTRATE - The present invention provides inkjet print nozzle calibration systems and methods for measuring thickness of deposited ink pixel wells on a substrate. The method includes scanning a plurality of pixel wells with a thickness measurement device, wherein the pixel wells include fluid ink with evaporating solvent; re-scanning the plurality of pixel wells subsequent to the scanning; and determining an average thickness of the ink in each of the plurality of pixel wells based on measurements made during the scan and the re-scan. Numerous other aspects are provided. | 10-08-2009 |
20090255798 | METHOD TO PREVENT PARASITIC PLASMA GENERATION IN GAS FEEDTHRU OF LARGE SIZE PECVD CHAMBER - The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor. | 10-15-2009 |
20090255911 | LASER SCRIBING PLATFORM AND HYBRID WRITING STRATEGY - Laser scribing can be performed on a workpiece ( | 10-15-2009 |
20090258162 | PLASMA PROCESSING APPARATUS AND METHOD - The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor. | 10-15-2009 |
20090261331 | LOW TEMPERATURE THIN FILM TRANSISTOR PROCESS, DEVICE PROPERTY, AND DEVICE STABILITY IMPROVEMENT - A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress. | 10-22-2009 |
20090267975 | METHODS AND APPARATUS FOR ALIGNING PRINT HEADS - In a first aspect, a system is provided. The system includes ( | 10-29-2009 |
20090274830 | ROLL TO ROLL OLED PRODUCTION SYSTEM - The present invention generally relates to a method and an apparatus for processing one or more substrates on a roll to roll system. The one or more substrates may pass through several processing chambers to deposit the layers necessary to produce an OLED structure. The processing chambers may include ink jetting chambers, chemical vapor deposition (CVD) chambers, physical vapor deposition (PVD) chambers, and annealing chambers. Additional chambers may also be present. | 11-05-2009 |
20090283036 | SHADOW FRAME HAVING ALIGNMENT INSERTS - The present invention generally includes a shadow frame with alignment inserts that may permit the shadow frame to be properly aligned on the susceptor. The shadow frame may have one or more alignment inserts. The alignment inserts may be coupled to a cavity formed in the bottom surface of the shadow frame. The alignment inserts may be shaped to receive an alignment button that may be present on the susceptor. Thus, as the susceptor raises to the processing position and retrieves the shadow frame, the shadow frame may align properly on the susceptor. | 11-19-2009 |
20090283039 | ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE - The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component. | 11-19-2009 |
20090321397 | LASER-SCRIBING PLATFORM - Laser-scribing systems and translation stages operable to support a workpiece during laser scribing are provided. A laser-scribing system includes a base section, a bed supported by the base section, a laser, a first driving mechanism operable to move a workpiece longitudinally along the bed, and a second driving mechanism. The bed comprises a movable section configured to translate with respect to the base section. The movable section comprises a gap to allow a laser beam to pass through. The laser is positioned to direct the laser beam through the gap. The second driving mechanism is operable to laterally translate the laser and the movable section in order to scribe a pattern on the workpiece. | 12-31-2009 |
20090324847 | Method of avoiding a parasitic plasma in a plasma source gas supply conduit - It has been discovered that a parasitic plasma problem which has existed with respect to incoming plasma source gases present in a source gas feed line to a plasma processing chamber can be avoided. The stability of a parasitic plasma is avoided by installing an RF resistor conduit in the source gas feed line and increasing the pressure in the RF resistor conduit through which the plasma source gases flow. Use of a variable surface restrictor in the RF resistor conduit or between the RF resistor conduit and the plasma processing chamber enables not only avoidance of the formation of a parasitic plasma in incoming plasma source gases, but also easier cleaning of the processing chamber plasma generation system when a remotely generated plasma is used for such cleaning. | 12-31-2009 |
20100003780 | METHODS AND APPARATUS FOR DEPOSITING A MICROCRYSTALLINE SILICON FILM FOR PHOTOVOLTAIC DEVICE - Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, a photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent. | 01-07-2010 |
20100013626 | SUBSTRATE LIFT PIN SENSOR - Embodiments disclosed herein include a method and apparatus for supporting a substrate. When a substrate is inserted into a processing chamber by an end effector robot, the substrate is placed on one or more lift pins. The lift pins may include a sensing mechanism that can detect whether the substrate is cracked, the lift pin is broken, or the lift pin sticks to the bushing. By detecting the aforementioned conditions, uniform, repeatable deposition may be obtained for multiple substrates. | 01-21-2010 |
20100050534 | SLOTTED TSSL DOOR TO COUPLE O-RING WITH MOVING MATING PART - Embodiments disclosed herein generally relate to a slit valve door assembly for sealing an opening in a chamber. A slit valve door that is pressed against the chamber to seal the slit valve opening moves with the chamber as the slit valve opening shrinks so that an o-ring pressed between the slit valve door and the chamber may move with the slit valve door and the chamber. Thus, less rubbing of the o-ring against the chamber may occur. With less rubbing, fewer particles may be generated and the o-ring lifetime may be extended. With a longer lifetime for the o-ring, substrate throughput may be increased. | 03-04-2010 |
20100080933 | MULTI-ELECTRODE PECVD SOURCE - Embodiments of the present invention generally relate to methods and apparatus for plasma generation in plasma processes. The methods and apparatus generally include a plurality of electrodes. The electrodes are connected to a RF power source, which powers the electrodes out of phase from one another. Adjacent electrodes are electrically isolated from one another by electrically insulating members disposed between and coupled to the electrodes. Processing gas may be delivered and/or withdrawn through the electrodes and/or the electrically insulating members. The substrate may remain electrically floating because the plasma may be capacitively coupled to it through a differential RF source drive. | 04-01-2010 |
20100089319 | RF RETURN PATH FOR LARGE PLASMA PROCESSING CHAMBER - A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall. | 04-15-2010 |
20100092658 | COATING OF MASKED SUBSTRATES - The present invention refers to a coating installation and a corresponding method or coating a substrate comprising the steps of:
| 04-15-2010 |
20100136261 | MODULATION OF RF RETURNING STRAPS FOR UNIFORMITY CONTROL - Embodiments of the present invention generally relates to a method and apparatus for processing substrates using plasma. More particularly, embodiments of the present invention provide a plasma processing chamber having an electrode coupled to a plurality of RF returning straps, wherein impedance of the RF returning straps are set and/or adjusted to tune the plasma distribution during processing. In one embodiment, impedance of RF returning straps varies by changing length of the RF returning straps, by changing width of the RF returning straps, by changing spacing of the RF returning straps, by changing location of the RF returning straps, by adding a capacitor to the RF returning straps, or by combinations thereof. | 06-03-2010 |
20100144160 | PLASMA REACTOR SUBSTRATE MOUNTING SURFACE TEXTURING - The present invention generally provides apparatus and methods for providing necessary capacitive decoupling to a large area substrate in a plasma reactor. One embodiment of the invention provides a substrate support for using in a plasma reactor comprising an electrically conductive body has a top surface with a plurality of raised areas configured for contacting a back surface of a large area substrate, and the plurality of raised areas occupy less than about 50% of the surface area of the top surface. | 06-10-2010 |
20100181024 | DIFFUSER SUPPORT - Embodiments of gas distribution apparatus comprise a diffuser support member coupled to a diffuser and movably disposed through a backing plate. Embodiments of methods of processing a substrate on a substrate receiving surface of a substrate support comprise providing a diffuser in which a diffuser support member supports the diffuser and is movably disposed through the backing plate. | 07-22-2010 |
20100196626 | GROUND RETURN FOR PLASMA PROCESSES - A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof. | 08-05-2010 |
20100206483 | RF Bus and RF Return Bus for Plasma Chamber Electrode - For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor. | 08-19-2010 |
20100245084 | Detecting plasma chamber malfunction - Malfunction of a component within an RF-powered plasma chamber is detected by observing an operating condition of the plasma chamber and detecting when the operating condition deviates from a previously observed range bounded by lower and upper limits. The lower and upper limits are determined by observing the minimum and maximum values of that operating condition during the processing of workpieces throughout one or more plasma chamber cleaning cycles immediately preceding the most recent cleaning of the plasma chamber. | 09-30-2010 |
20100281683 | ELECTRONIC DEVICE MANUFACTURING CHAMBER AND METHODS OF FORMING THE SAME - A non-polygon shaped, multi-piece chamber is provided. A non-polygon shaped, multi-piece chamber may include (1) a central piece having a first side and a second side, (2) a first side piece adapted to couple with the first side of the central piece, and (3) a second side piece adapted to couple with the second side of the central piece. The central piece, the first side piece, and the second side piece form a cylindrical overall shape when coupled together. Numerous other aspects are provided. | 11-11-2010 |
20100282603 | HEATED SUBSTRATE SUPPORT FOR CHEMICAL VAPOR DEPOSITION - A method and apparatus for making a heated substrate support assembly used in a processing chamber is provided. The processing chamber includes a substrate support assembly, having a first plate and a second plate with grooves disposed therein for receiving one or more heating elements, and a power source for heating the substrate support assembly. A first surface of the first plate and a second surface of the second plate include one or more matching structures disposed thereon, such that both plates can be compressed together by isostatic compression and form into a plate-like structure for supporting a substrate during substrate processing. In another embodiment, the first and second plates are compressed by applying pressure all around. In still another embodiment, compressing the first and second plates is performed at elevated temperature. | 11-11-2010 |
20100288197 | ANODIZED SHOWERHEAD - Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate. | 11-18-2010 |
20100311249 | MULTI-GAS FLOW DIFFUSER - Embodiments of the disclosure generally provide a method and apparatus for processing a substrate in a vacuum process chamber. In one embodiment a vacuum process chamber is provided that includes a chamber body and lid disposed on the chamber body. A blocker plate is coupled to the lid and bounds a staging plenum therewith. A gas distribution plate is coupled to the lid. The gas distribution plate separates a main plenum defined between the gas distribution plate and the blocker plate from a process volume defined within the chamber body. The gas distribution plate and the blocker plate define a spacing gradient therebetween which influences mixing of gases within the main plenum. | 12-09-2010 |
20100327162 | IN-LINE ELECTRON BEAM TEST SYSTEM - A method and apparatus for testing a plurality of electronic devices formed on a large area substrate is described. In one embodiment, the apparatus performs a test on the substrate in one linear axis in at least one chamber that is slightly wider than a dimension of the substrate to be tested. Clean room space and process time is minimized due to the smaller dimensions and volume of the system. | 12-30-2010 |
20110041873 | Method of cleaning a CVD processing chamber - We have a method of improving the deposition rate uniformity of the chemical vapor deposition (CVD) of films when a number of substrates are processed in series, sequentially in a deposition chamber. The method includes the plasma pre-heating of at least one processing volume structure within the processing volume which surrounds the substrate when the substrate is present in the deposition chamber. We also have a device-controlled method which adjusts the deposition time for a few substrates at the beginning of the processing of a number of substrates in series, sequentially in a deposition chamber, so that the deposited film thickness remains essentially constant during processing of the series of substrates. A combination of these methods into a single method provides the best overall results in terms of controlling average film thickness from substrate to substrate. | 02-24-2011 |
20110095402 | Gate dielectric film with controlled structural and physical properties over a large surface area substrate | 04-28-2011 |
20110135844 | LARGE AREA PLASMA PROCESSING CHAMBER WITH AT-ELECTRODE RF MATCHING - A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode. | 06-09-2011 |
20110146577 | SHOWERHEAD WITH INSULATED CORNER REGIONS - Embodiments of the present invention generally relate to a gas distribution showerhead having insulated corner regions to reduce arcing and improve deposition uniformity control. In one embodiment, the gas distribution showerhead is formed of a conductive material with material from the corner regions removed. Corner members formed substantially in the shape of the removed portion of corner regions are attached to the conductive showerhead. The corner members may be made of a material having electrical insulating properties, such as a ceramic or insulating polymer. | 06-23-2011 |
20110164955 | PROCESSING CHAMBER WITH TRANSLATING WEAR PLATE FOR LIFT PIN - Embodiments of a method and apparatus for processing large area substrates including a translational wear plate and/or bushing assembly are provided for reducing the stress on a lift pin used to space substrates from a substrate support in a processing or other type of chamber. In another embodiment, an apparatus for processing substrates includes processing chamber comprising a substrate support disposed in a chamber body. A bushing assembly is disposed in the substrate support. A lift pin is disposed through the bushing assembly. A wear plate is provided that is coupled to the chamber body and aligned with the lift pin. The wear plate is movable laterally relative to a centerline of the chamber body to accommodate lateral motion of the lift pin when contacting the wear plate. | 07-07-2011 |
20110241892 | Frequency Monitoring to Detect Plasma Process Abnormality - Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions. | 10-06-2011 |
20110284100 | TIGHTLY FITTED CERAMIC INSULATOR ON LARGE AREA ELECTRODE - Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential. | 11-24-2011 |
20110287374 | FLOATING SLIT VALVE FOR TRANSFER CHAMBER INTERFACE - The present invention generally comprises a floating slit valve for interfacing with a chamber. A floating slit valve moves or “floats” relative to another object such as a chamber. The slit valve may be coupled between two chambers. When a chamber coupled with the slit valve is heated, the slit valve may also be heated by conduction. As the slit valve is heated, it may thermally expand. When a vacuum is drawn in a chamber, the slit valve may deform due to vacuum deflection. By disposing a low friction material spacer between the chamber and the slit valve, the slit valve may not rub against the chamber during thermal expansion/contraction and/or vacuum deflection and thus, may not generate undesirable particle contaminants. Additionally, slots drilled through the chamber for coupling the slit valve to the chamber may be sized to accommodate thermal expansion/contraction and vacuum deflection of the slit valve. | 11-24-2011 |
20110290183 | Plasma Uniformity Control By Gas Diffuser Hole Design - Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties. | 12-01-2011 |
20110297921 | WATER-BARRIER ENCAPSULATION METHOD - The present invention generally relates to organic light emitting diode (OLED) structures and methods for their manufacture. To increase the lifetime of an OLED structure, an encapsulating layer may be deposited over the OLED structure. The encapsulating layer may fully enclose or “encapsulate” the OLED structure. The encapsulating layer may have a substantially planar surface opposite to the interface between the OLED structure and the encapsulating layer. The planar surface permits successive layers to be evenly deposited over the OLED structure. The encapsulating layer reduces any oxygen penetration into the OLED structure and may increase the lifetime of the OLED structure. | 12-08-2011 |
20120006493 | HEATING AND COOLING OF SUBSTRATE SUPPORT - A process chamber and a method for controlling the temperature of a substrate positioned on a substrate support assembly within the process chamber are provided. The substrate support assembly includes a thermally conductive body, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, and two or more cooling channels embedded within the thermally conductive body to be coplanar with the one or more heating elements. The cooling channels may be branched into two or more equal-length cooling passages being extended from a single point inlet and into a single point outlet to provide equal resistance cooling. | 01-12-2012 |
20120024693 | REACTIVE SPUTTERING CHAMBER WITH GAS DISTRIBUTION TUBES - A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability. | 02-02-2012 |
20120031333 | VERTICAL INLINE CVD SYSTEM - The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system. | 02-09-2012 |
20120031335 | VERTICAL INLINE CVD SYSTEM - The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system. | 02-09-2012 |
20120061605 | GATE VALVE - In one embodiment, a gate valve is provided that includes a seal plate disposed in a housing. An inflatable biasing member is retained on a first side of the seal plate and is positioned to surround a first opening formed through the housing. A ring seal is retained on a second side of the plate opposite the first side and is positioned to surround a second opening formed through the housing. At least one of the inflatable biasing member and the ring seal are adapted to create a vacuum seal around the first and second openings, respectively, when the inflatable biasing member is inflated. | 03-15-2012 |
20120082802 | POWER LOADING SUBSTRATES TO REDUCE PARTICLE CONTAMINATION - A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur. | 04-05-2012 |
20120103264 | METHODS AND APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM WITH FLOW GRADIENT DESIGNS - Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes. | 05-03-2012 |
20120103989 | METHOD AND APPARATUS FOR SEALING AN OPENING OF A PROCESSING CHAMBER - A method and apparatus for sealing an opening of a processing chamber are provided. In one embodiment, the invention generally provides a closure member integrated within a wall of a process chamber for sealing an opening within the wall of the chamber. In another embodiment, the invention provides a closure member configured to seal an opening in the wall of a processing chamber from the inside of the chamber. | 05-03-2012 |
20120149194 | Substrate Support with Gas Introduction Openings - Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas. | 06-14-2012 |
20120171391 | THIN FILM DEPOSITION USING MICROWAVE PLASMA - Embodiments of the present invention generally provide deposition processes for a silicon-containing dielectric layer using an improved microwave-assisted CVD chamber. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power of about 500 milliWatts/cm | 07-05-2012 |
20120208306 | METHOD FOR ENCAPSULATING AN ORGANIC LIGHT EMITTING DIODE - Methods for encapsulating OLED structures disposed on a substrate using a soft/polymer mask technique are provided. The soft/polymer mask technique can efficiently provide a simple and low cost OLED encapsulation method, as compared to convention hard mask patterning techniques. The soft/polymer mask technique can utilize a single polymer mask to complete the entire encapsulation process with low cost and without alignment issues present when using conventional metal masks. Rather than utilizing a soft/polymer mask, the encapsulation layers may be blanked deposited and then laser ablated such that no masks are utilized during the encapsulation process. | 08-16-2012 |
20120217874 | Plasma Source with Vertical Gradient - A plasma source includes upper and lower portions. In a first aspect, an electrical power source supplies greater power to the upper portion than to the lower portion. In a second aspect, the plasma source includes three or more power couplers that are spaced apart vertically, wherein the number of plasma power couplers in the upper portion is greater than the number of plasma power couplers in the lower portion. The upper and lower portions of the plasma source can be defined as respectively above and below a horizontal geometric plane that bisects the vertical height of the plasma source. Alternatively, the upper and lower portions can be defined as respectively above and below a horizontal geometric plane that bisects the combined area of first and second workpiece positions. | 08-30-2012 |
20120304934 | POROUS CERAMIC GAS DISTRIBUTION FOR PLASMA SOURCE ANTENNA - Apparatus and methods for preventing or substantially minimizing unwanted deposits on dielectric covers of an antenna by effectively providing an inert (non-depositing) gas at the surface of the antenna cover is provided. | 12-06-2012 |
20120326592 | Transmission Line RF Applicator for Plasma Chamber - A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor. | 12-27-2012 |
20130068161 | GAS DELIVERY AND DISTRIBUTION FOR UNIFORM PROCESS IN LINEAR-TYPE LARGE-AREA PLASMA REACTOR - An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle. | 03-21-2013 |
20130071581 | PLASMA MONITORING AND MINIMIZING STRAY CAPACITANCE - The present invention generally relates to a capacitively coupled plasma (CCP) processing chamber, a manner to reduce or prevent stray capacitance, and a manner to measure plasma conditions within the processing chamber. As CCP processing chambers increase in size, there is a tendency for stray capacitance to negatively impact the process. Additionally, RF ground straps may break. By increasing the spacing between the chamber backing plate and the chamber wall, stray capacitance may be minimized. Additionally, the plasma may be monitored by measuring the conditions of the plasma at the backing plate rather than at the match network. In so measuring, the plasma harmonic data may be analyzed to reveal plasma processing conditions within the chamber. | 03-21-2013 |
20130126331 | Guided Wave Applicator with Non-Gaseous Dielectric for Plasma Chamber - A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric. | 05-23-2013 |
20130140009 | ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE - The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component. | 06-06-2013 |
20130186859 | Asymmetrical RF Drive for Electrode of Plasma Chamber - RF power is coupled to one or more RF drive points ( | 07-25-2013 |
20130206068 | LINEAR PECVD APPARATUS - The present invention generally relates to a linear PECVD apparatus. The apparatus is designed to process two substrates simultaneously so that the substrates share plasma sources as well as gas sources. The apparatus has a plurality of microwave sources centrally disposed within the chamber body of the apparatus. The substrates are disposed on opposite sides of the microwave sources with the gas sources disposed between the microwave sources and the substrates. The shared microwave sources and gas sources permit multiple substrates to be processed simultaneously and reduce the processing cost per substrate. | 08-15-2013 |
20130221833 | Transmission line RF applicator for plasma chamber - A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor. | 08-29-2013 |
20130228124 | SUBSTRATE SUPPORT WITH CERAMIC INSULATION - Embodiments of the present invention generally relates to substrate supports for use in a plasma processing chamber. The substrate supports, which are metallic, have ceramic inserts to prevent arcing between the substrate support and the shadow frame used to protect the edges of the substrate support during processing. In large area substrate processing chambers, the shadow frame may comprise multiple pieces. The individual pieces may be coupled together, but spaced slightly apart by a gap to permit thermal expansion. Ceramic inserts are positioned on the substrate support so that when a shadow frame is positioned adjacent thereto, the ceramic inserts are located adjacent the gaps in the shadow frame. The ceramic inserts adjacent the gap prevent and/or reduce the arcing because the gaps are located over electrically insulating material rather than electrically conductive material. | 09-05-2013 |
20130263782 | FLIP EDGE SHADOW FRAME - Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate. | 10-10-2013 |
20130302999 | SIOX PROCESS CHEMISTRY DEVELOPMENT USING MICROWAVE PLASMA CVD - Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate. | 11-14-2013 |
20140023460 | SLIT VALVE DOOR WITH MOVING MATING PART - Embodiments disclosed herein generally relate to a slit valve door assembly for sealing an opening in a chamber. A slit valve door that is pressed against the chamber to seal the slit valve opening moves with the chamber as the slit valve opening shrinks so that an o-ring pressed between the slit valve door and the chamber may move with the slit valve door and the chamber. Thus, less rubbing of the o-ring against the chamber may occur. With less rubbing, fewer particles may be generated and the o-ring lifetime may be extended. With a longer lifetime for the o-ring, substrate throughput may be increased. | 01-23-2014 |
20140216344 | RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS - In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design. | 08-07-2014 |
20140216929 | DOPED ZINC TARGET - The present invention generally relates to a sputtering target comprised of zinc and a dopant. Zinc is utilized for metal oxide semiconductor materials, such as IGZO, zinc oxide and zinc oxynitride. The zinc may be delivered by sputtering a zinc target in a desired atmosphere. If a pure zinc sputtering target is used, a stable film cannot be produced unless mobility is sacrificed to below 10 cm | 08-07-2014 |
20140230730 | GAS DIFFUSION SHOWER HEAD DESIGN FOR LARGE AREA PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the cylindrical portion and the downstream end of the conical portion having a larger diameter. | 08-21-2014 |
20140251216 | FLIP EDGE SHADOW FRAME - Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate. | 09-11-2014 |
20140264354 | BUFFER LAYERS FOR METAL OXIDE SEMICONDUCTORS FOR TFT - The present invention generally relates to a thin film semiconductor device having a buffer layer formed between the semiconductor layer and one or more layers. In one embodiment, a thin film semiconductor device includes a semiconductor layer having a first work function and a first electron affinity level, a buffer layer having a second work function greater than the first work function and a second electron affinity level that is less than the first electron affinity level; and a gate dielectric layer having a third work function less than the second work function and a third electron affinity level that is greater than the second electron affinity level. | 09-18-2014 |