Jianfang
Jianfang Chen, Shanghai CN
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20140125989 | SIX-AXIS FOUR-SUBDIVIDING INTERFEROMETER - Six-axis four-subdividing interferometer comprising a six-axis light splitting system and an interference module which are sequentially arranged along the incident direction of polarization orthogonal double-frequency laser, wherein the six-axis light splitting system comprises five 45-degree plane beam splitters and four 45-degree full-reflecting minors. | 05-08-2014 |
20140160489 | FOUR-AXIS FOUR-SUBDIVIDING INTERFEROMETER - Four-axis four-subdividing interferometer comprising a four-axis light splitting module and an interference module which are sequentially arranged along the incident direction of polarization orthogonal double-frequency laser. The four-axis light splitting system comprises three 50% plane beam splitters and three 45-degree plane reflecting mirrors. The invention comprises a four-axis four-subdividing plane mirror interferometer and a four-axis four-subdividing differential interferometer. In the differential interferometer, an adjustable 45-degree reflecting minor is used to guide the reference light to a reference reflecting minor which is arranged in the same direction as a measurement minor and fixed on the moving object. | 06-12-2014 |
Jianfang Liang, Singapore SG
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20150076669 | RELIABLE CONTACTS - Semiconductor devices and methods for forming a semiconductor device are presented. The method includes providing a substrate having a device component with a contact region. A contact dielectric layer is formed on the substrate, covering the substrate and device component. The contact dielectric layer includes a lower contact dielectric layer, an intermediate contact dielectric etch stop layer formed on the lower contact dielectric layer, and an upper contact dielectric layer formed on the intermediate contact dielectric etch stop layer. A contact opening is formed through the contact dielectric layer. The contact opening has an upper contact sidewall profile in the upper contact dielectric layer and a lower tapered contact sidewall profile in the lower contact dielectric layer. The tapered sidewall profile prevents shorting with the device component. | 03-19-2015 |
Jianfang Song US
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20160000253 | PORTABLE MANUALLY-OPERATED COFFEE MAKER - A portable manually-operated coffee maker includes a cup body, a hydraulic base body, and a coffee brewing base body detachably connected into one piece. The hydraulic base body is disposed between the cup body and the coffee brewing base body. A water storage cavity, a water inlet passage, and a water outlet passage are disposed in the hydraulic base body. The water inlet passage is in communication with the water storage cavity and the cup body. An accommodating cavity and a coffee outlet passage are disposed in the coffee brewing base body. The water outlet passage is in communication with the water storage cavity and the accommodating cavity. A water inlet control valve is disposed in the water inlet passage, and a water outlet control valve is disposed in the water outlet passage. A hydraulic power rod is disposed in the water storage cavity. | 01-07-2016 |
Jianfang Song, Zhongshan CN
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20160000253 | PORTABLE MANUALLY-OPERATED COFFEE MAKER - A portable manually-operated coffee maker includes a cup body, a hydraulic base body, and a coffee brewing base body detachably connected into one piece. The hydraulic base body is disposed between the cup body and the coffee brewing base body. A water storage cavity, a water inlet passage, and a water outlet passage are disposed in the hydraulic base body. The water inlet passage is in communication with the water storage cavity and the cup body. An accommodating cavity and a coffee outlet passage are disposed in the coffee brewing base body. The water outlet passage is in communication with the water storage cavity and the accommodating cavity. A water inlet control valve is disposed in the water inlet passage, and a water outlet control valve is disposed in the water outlet passage. A hydraulic power rod is disposed in the water storage cavity. | 01-07-2016 |
Jianfang Wang, Goleta, CA US
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20090057650 | Nanoscale wires and related devices - The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like. | 03-05-2009 |
20100155698 | Nanoscale wires and related devices - The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like. | 06-24-2010 |
Jianfang Wang, Shatin CN
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20150021499 | CONVERTING INFRARED LIGHT INTO BROADBAND VISIBLE LIGHT AT HIGH EFFICIENCY USING LANTHANIDE-SENSITIZED OXIDES - The present invention includes upconversion materials such as lanthanide-sensitized oxides that are useful for converting low-energy photons into high-energy photons. Because silicon-based solar cells have an intrinsic optical band-gap of 1.1 eV, low-energy photons having a wavelength longer than 1100 nm, e g., infrared photons, cannot be absorbed by the solar cell and used for photovoltaic energy conversion. Only those photons that have an energy equal to or greater than the solar cell's band gap, e.g., visible photons, can be absorbed and used for photovoltaic energy conversion. The oxides described herein transform photons having an energy less than the energy of a solar cell's band gap into photons having an energy equal to or greater than the energy of the band gap. When these oxides are incorporated into a solar cell, they provide more photons for photovoltaic energy conversion than otherwise would be available in their absence. Nearly 10% of the infrared photons incident on these oxides are upconverted into visible photons. This upconversion efficiency is more than twice as large as the upconversion efficiency for NaYF | 01-22-2015 |