Patent application number | Description | Published |
20100072465 | BARIUM COPPER SULFUR FLUORIDE TRANSPARENT CONDUCTIVE THIN FILMS AND BULK MATERIAL - The present invention is generally directed to a bulk barium copper sulfur fluoride (BCSF) material made by combining Cu | 03-25-2010 |
20100155678 | Hot-Pressed Transparent Ceramics and Ceramic Lasers - A transparent polycrystalline ceramic having scattering and absorption loss less than 0.2/cm over a region comprising more than 95% of the originally densified shape and further provides a process for fabricating the same by hot pressing. The ceramic can be any suitable ceramic such as yttria (Y | 06-24-2010 |
20110067757 | COPPER INDIUM GALLIUM SELENIDE (CIGS) THIN FILMS WITH COMPOSITION CONTROLLED BY CO-SPUTTERING - A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell. | 03-24-2011 |
20110067997 | SYNTHESIS OF HIGH-PURITY BULK COPPER INDIUM GALLIUM SELENIDE MATERIALS - A method for forming a high purity, copper indium gallium selenide (CIGS) bulk material is disclosed. The method includes sealing precursor materials for forming the bulk material in a reaction vessel. The precursor materials include copper, at least one chalcogen selected from selenium, sulfur, and tellurium, and at least one element from group IIIA of the periodic table, which may be selected from gallium, indium, and aluminum. The sealed reaction vessel is heated to a temperature at which the precursor materials react to form the bulk material. The bulk material is cooled in the vessel to a temperature below the solidification temperature of the bulk material and opened to release the formed bulk material. A sputtering target formed by the method can have an oxygen content of 10 ppm by weight, or less. | 03-24-2011 |
20120168742 | BARIUM COPPER SULFUR FLUORIDE TRANSPARENT CONDUCTIVE THIN FILMS AND BULK MATERIAL - A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu | 07-05-2012 |
20140076402 | CONTROLLED DEPOSITION OF PHOTOVOLTAIC THIN FILMS USING INTERFACIAL WETTING LAYERS - A method for forming a photovoltaic device by depositing at least one wetting layer onto a substrate where the wetting layer is ≦100 nm and sputtering a photovoltaic material onto the wetting layer where the wetting layer interacts with the photovoltaic material. Also disclosed is the related photovoltaic device made by this method. The wetting layer may comprise any combination of In | 03-20-2014 |
20140098411 | RARE EARTH DOPED Lu2O3 POLYCRYSTALLINE CERAMIC LASER GAIN MEDIUM - A method for making a rare earth doped polycrystalline ceramic laser gain medium by hot pressing a rare earth doped polycrystalline powder where the doping concentration is greater than 2% and up to 10% and where the grain size of the final ceramic is greater than 2 μm. The polycrystalline powder can be Lu | 04-10-2014 |
20140216925 | Single Target Sputtering of Copper Zinc Tin Sulfide Selenide, CZT(S, Se) - A method of forming a CZT(S,Se) thin film from a quaternary target involves sputtering a quaternary target onto a substrate, wherein the quaternary target comprises (a) copper, (b) zinc, (c) tin, and (d) selenium and/or sulfur, wherein each component (a) through (d) is present in the quaternary target within ±50% of a 2:1:1:4 molar ratio, respectively, thereby forming a CZT(S,Se) thin film on the substrate, wherein the CZT(S,Se) thin film has a kesterite crystalline phase and a band gap of about 1.0 to 1.5 eV. In an embodiment, a ternary target is employed. | 08-07-2014 |
20140220357 | BARIUM COPPER SULFUR FLUORIDE TRANSPARENT CONDUCTIVE THIN FILMS AND BULK MATERIAL - A p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate. | 08-07-2014 |
20140239563 | Containment of molten aluminum using non-wetting materials - A method of containing molten aluminum using non-wetting materials comprising depositing MgAl | 08-28-2014 |
20140261668 | GROWTH OF CIGS THIN FILMS ON FLEXIBLE GLASS SUBSTRATES - An article made by: sputtering molybdenum onto a flexible glass substrate, and depositing a photovoltaic material on the molybdenum by sputtering, thermal evaporation, multi-target ternary or binary sputtering, or nanoparticle techniques. | 09-18-2014 |
20140261669 | GROWTH OF CIGS THIN FILMS ON FLEXIBLE GLASS SUBSTRATES - An article made by: depositing a bottom contact onto a flexible glass substrate, and depositing a photovoltaic material on the bottom contact. | 09-18-2014 |
20140263171 | Wet-Etchable, Sacrificial Liftoff Layer Compatible with High Temperature Processing - A method for forming a wet-etchable, sacrificial lift-off layer or layers compatible with high temperature processing, a sacrificial layer, defined as consisting of a single film of one material or multiple films of multiple materials, that can tolerate high temperatures, is deposited on a substrate, called the original substrate, by sputtering or another suitable technique (e.g. evaporation, pulsed laser deposition, wet chemistry, etc.). Intermediate steps result in a lift-off layer attached to the lift-off substrate, that allow for separating the product from the original substrate. | 09-18-2014 |
20140264988 | PHOTOVOLTAIC SPUTTERING TARGETS FABRICATED FROM RECLAIMED MATERIALS - A method of: providing one or more spent sputtering targets comprising a photovoltaic compound and grinding the photovoltaic compound in an inert environment to form a powder. | 09-18-2014 |
20150075620 | COPPER INDIUM GALLIUM SELENIDE (CIGS) THIN FILMS WITH COMPOSITION CONTROLLED BY CO-SPUTTERING - A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell. | 03-19-2015 |