Patent application number | Description | Published |
20130228843 | NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A nonvolatile memory device includes a memory gate pattern on a substrate, and a non-memory gate pattern on the substrate, the non-memory gate pattern being spaced apart from the memory gate pattern, wherein the non-memory gate pattern includes an ohmic layer, and the memory gate pattern is provided without an ohmic layer. | 09-05-2013 |
20130273727 | SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME - A semiconductor device includes a substrate, a first poly-silicon pattern on the substrate, a metal pattern on the first poly-silicon pattern, and an interface layer between the first poly-silicon pattern and the metal pattern. The interface layer may include at least one selected from the group of a metal-silicon oxynitride layer, a metal-silicon oxide layer, and a metal-silicon nitride layer. | 10-17-2013 |
20140001625 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME | 01-02-2014 |
20140015030 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A semiconductor device includes a lower insulating pattern on a semiconductor substrate, a lower gate pattern on the lower insulating pattern and formed of a doped polysilicon layer, a residual insulating pattern with an opening exposing a portion of a top surface of the lower gate pattern, an upper gate pattern on the residual insulating pattern, the upper gate pattern filling the opening, and a diffusion barrier pattern in contact with the portion of the top surface of the lower gate pattern and extending between the residual insulating pattern and the upper gate pattern. | 01-16-2014 |
20140220750 | Semiconductor Memory Device and Method of Fabricating the Same - Provided are a semiconductor device and a method of fabricating the same. The method may include forming an electrode structure including insulating layers and electrode layers alternatingly stacked on a substrate, forming a channel hole to penetrate the electrode structure, forming a data storage layer on a sidewall of the channel hole, and forming a semiconductor pattern on a sidewall of the data storage layer to be electrically connected to the substrate. The electrode layers may be metal-silicide layers, and the insulating layers and the electrode layers may be formed in an in-situ manner using the same deposition system. | 08-07-2014 |
20140332874 | SEMICONDUCTOR DEVICES - A semiconductor device includes a substrate, a first poly-silicon pattern on the substrate, a metal pattern on the first poly-silicon pattern, and an interface layer between the first poly-silicon pattern and the metal pattern. The interface layer may include at least one selected from the group of a metal-silicon oxynitride layer, a metal-silicon oxide layer, and a metal-silicon nitride layer. | 11-13-2014 |
20150084109 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A semiconductor device includes a lower insulating pattern on a semiconductor substrate, a lower gate pattern on the lower insulating pattern and formed of a doped polysilicon layer, a residual insulating pattern with an opening exposing a portion of a top surface of the lower gate pattern, an upper gate pattern on the residual insulating pattern, the upper gate pattern filling the opening, and a diffusion barrier pattern in contact with the portion of the top surface of the lower gate pattern and extending between the residual insulating pattern and the upper gate pattern. | 03-26-2015 |