Patent application number | Description | Published |
20100285662 | METHODS OF FABRICATING INTEGRATED CIRCUIT DEVICES INCLUDING AIR SPACERS SEPARATING CONDUCTIVE STRUCTURES AND CONTACT PLUGS - An integrated circuit device includes first and second conductive structures spaced apart from one another on a substrate along a first direction. The first and second conductive structures extend in a second direction substantially perpendicular to the first direction. A contact plug is interposed between the first and second conductive structures and is separated therefrom along the first direction by respective air gaps on opposite sides of the contact plug. The air gaps define first and second air spacers that electrically insulate the contact plug from the first and second conductive structures, respectively. An upper insulation layer covers the first and second air spacers and the first and second conductive structures. The air spacers may sufficiently reduce the loading capacitance between the conductive structures. Related fabrication methods are also discussed. | 11-11-2010 |
20120217631 | INTEGRATED CIRCUIT DEVICES INCLUDING AIR SPACERS SEPARATING CONDUCTIVE STRUCTURES AND CONTACT PLUGS AND METHODS OF FABRICATING THE SAME - An integrated circuit device includes first and second conductive structures spaced apart from one another on a substrate along a first direction. The first and second conductive structures extend in a second direction substantially perpendicular to the first direction. A contact plug is interposed between the first and second conductive structures and is separated therefrom along the first direction by respective air gaps on opposite sides of the contact plug. The air gaps define first and second air spacers that electrically insulate the contact plug from the first and second conductive structures, respectively. An upper insulation layer covers the first and second air spacers and the first and second conductive structures. The air spacers may sufficiently reduce the loading capacitance between the conductive structures. Related fabrication methods are also discussed. | 08-30-2012 |
20140145268 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - A semiconductor device includes an insulating interlayer over a substrate in a first region, the insulating layer including contact holes exposing a portion of a surface of the substrate, and contact plugs in the contact holes. The contact plugs include a stacked structure of a first barrier metal layer pattern and a first metal layer pattern. The semiconductor device also includes second metal layer patterns directly contacting with the contact plugs and an upper surface of the insulating interlayer. The second metal layer pattern consists is a metal material layer. | 05-29-2014 |
20140252440 | SEMICONDUCTOR DEVICES INCLUDING CONDUCTIVE PLUG - Semiconductor devices include a substrate having a target connection region; a conductive line having a first side wall spaced apart from the substrate by at least an insulating layer, and a conductive plug structure electrically connecting the conductive line to the target connection region, wherein the conductive plug includes a first conductive plug having a first side wall, a bottom surface contacting the target connection region of the substrate, and a second side wall facing the first side wall of the conductive line, and a second conductive plug between the conductive line and the first conductive plug. The second conductive plug contacts both the first side wall of the conductive line and the second side wall of the first conductive plug. | 09-11-2014 |
20140312455 | PATTERNS OF A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device including a plurality of active patterns, a plurality of first isolation layer patterns and a plurality of second isolation layer patterns may be provided. In particular, the active patterns may be arranged both in a first direction and in a second direction, and may protrude from a substrate and have a length in the first direction. The first isolation layer patterns may fill a first space, the first space provided between the active patterns and arranged in the first direction, and support two opposing sidewalls of neighboring active patterns. The second isolation layer patterns may fill a second space between the active patterns and the first isolation layer patterns. Accordingly, the active patterns of the semiconductor device may not collapse or incline because the first isolation layer patterns support the active patterns. | 10-23-2014 |
20140327056 | SEMICONDUCTOR DEVICE HAVING CONTACT PLUG AND METHOD OF MANUFACTURING THE SAME - A semiconductor device having a contact plug is manufactured. The semiconductor device includes a substrate having a cell array region and a peripheral circuit region, a gate electrode on the substrate, and an interlayer dielectric layer on the substrate. The interlayer dielectric layer has an upper surface having a first height. | 11-06-2014 |
20140327063 | SEMICONDUCTOR DEVICE HAVING LANDING PADS - A semiconductor device including a substrate, the substrate including active regions; a pair of conductive lines spaced apart from the substrate such that an insulating layer is between the substrate and the pair of conductive lines; insulating spacers covering side walls of each of the pair of conductive lines such that contact holes having first widths in a first direction are defined between the pair of conductive lines; upper insulating patterns on the pair of conductive lines, the upper insulating patterns defining landing pad holes connected to the contact holes such that the landing pad holes have second widths in the first direction that are greater than the first widths; contact structures including contact plugs connected to the active regions by passing through the insulating layer, and first landing pads connected to the contact plugs, the first landing pads being in the landing pads holes such that the first landing pads vertically overlap with one of the pair of conductive lines; and capacitor lower electrodes connected to the contact structures. | 11-06-2014 |
20140374809 | PADS INCLUDING CURVED SIDES AND RELATED ELECTRONIC DEVICES, STRUCTURES, AND METHODS - An electronic device may include a substrate, and a plurality of spaced apart pads on the substrate. Each of the pads may includes first, second, third, and fourth sides, the first and third sides may be opposite sides that are substantially straight, and the second and fourth sides may be opposite sides that are curved. Related methods, devices, and structures are also discussed. | 12-25-2014 |
20150084102 | SEMICONDUCTOR DEVICE - The semiconductor device including: a semiconductor layer extending in a first direction, the semiconductor layer including a pair of source/drain regions and a channel region, a gate extending on the semiconductor layer to cover the channel region, and a gate dielectric layer interposed between the channel region and the gate, a corner insulating spacer having a first surface and a second surface, the first surface extending in the second direction along a side wall of the gate, the first surface covering from a side portion of the gate dielectric layer to at least a portion of the side wall of the gate, and the second surface covering a portion of the semiconductor layer, and an outer portion insulating spacer covering the side wall of the gate above the corner insulating spacer, the outer portion insulating spacer having a smaller dielectric constant than the corner insulating spacer, may be provided. | 03-26-2015 |
Patent application number | Description | Published |
20130258748 | FUSE DATA READING CIRCUIT HAVING MULTIPLE READING MODES AND RELATED DEVICES, SYSTEMS AND METHODS - A fuse data reading circuit is configured to read fuse data in multi-reading modes. The fuse data may be stored in a fuse array that includes a plurality of fuse cells configured to store fuse data. The fuse data reading circuit may include a sensing unit configured to sense the fuse data stored in the fuse cells of the fuse array, and a controller configured to control an operation of reading the fuse data stored in the fuse cells. The controller sets different sensing conditions for sensing the fuse data according to an operation period during the fuse data reading operation to read the fuse data. Methods include operations and use of the fuse data reading circuit. | 10-03-2013 |
20130286759 | METHOD OF SELECTING ANTI-FUSES AND METHOD OF MONITORING ANTI-FUSES - For selecting anti-fuses in a semiconductor memory device, a decoder block may be enabled to receive selection information for selecting the anti-fuses. The selection information is decoded in the decoder block to select at least one of the anti-fuses. Target operation is performed on the selected anti-fuses. The decoder block is disabled. | 10-31-2013 |
20130322149 | MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND ELECTRONIC DEVICE HAVING THE MEMORY DEVICE - A memory device includes a memory cell array and a fuse device. The fuse device includes a fuse cell array and a fuse control circuit. The fuse cell array includes a first fuse cell sub-array which stores first data associated with operation of the fuse control circuit, and a second fuse cell sub-array which stores second data associated with operation of the memory device. The fuse control circuit is electrically coupled to the first and second fuse cell sub-arrays, and is configured to read the first and second data from the first and second fuse cell sub-arrays, respectively. | 12-05-2013 |
20140219038 | DEVICES AND METHODS FOR DECIDING DATA READ START - A data read start decision device includes: a storing circuit configured to store code key data; a read check circuit configured to output a read start signal in response to code key data read from the storing circuit, and a controller configured to start reading environment setting data from the storing circuit in response to the read start signal. The read check circuit is configured to at least one of: receive the read start signal from the controller and transfer the read start signal to the controller in response to the read code key data; and generate the read start signal based on the read code key data and output the read start signal to the controller. | 08-07-2014 |
20140241085 | SEMICONDUCTOR MEMORY DEVICE FOR PERFORMING DISABLE OPERATION USING ANTI-FUSE AND METHOD THEREOF - A semiconductor memory device for performing a disable operation using an anti-fuse, and method thereof are provided. The semiconductor memory device according to an example embodiment includes a fuse circuit including at least one anti-fuse configured to store fuse data, a memory circuit configured to at least one of read data stored in a memory cell and write data to the memory cell and a fuse controller configured to disable a read/write operation of the memory circuit based on the fuse data. | 08-28-2014 |