Patent application number | Description | Published |
20080267489 | METHOD FOR DETERMINING ABNORMAL CHARACTERISTICS IN INTEGRATED CIRCUIT MANUFACTURING PROCESS - A method for determining abnormal characteristics in integrated circuit manufacturing process is disclosed. The method comprises obtaining a charged particle microscope image of a sample test structure, wherein the sample including a reference pattern and a test pattern; measuring gray levels of the reference pattern and the test pattern; calculating a standard deviation from a distribution of the gray levels of the reference pattern measured; and determining the abnormal characteristics of the test pattern based on the gray levels measured and the standard deviation. | 10-30-2008 |
20100072364 | Method for regulating scanning sample surface charge in continuous and leap-and-scan scanning mode imaging process - A method for regulating sample surface charge has been proposed in this invention. The processes of applying a charged particle beam to a first area and applying a flood energized beam gun with gaseous molecules to a second area are executed in the method when the sample is in both continuous and Leap & Scan movements. The second area is located at a predetermined distance from the first area behind or ahead of the first area being scanned with respect to the movement of the sample. Thus, the surface of the sample may be regulated. | 03-25-2010 |
20100140498 | OPERATION STAGE FOR WAFER EDGE INSPECTION AND REVIEW - The present invention relates to an operation stage of a charged particle beam apparatus which is employed in a scanning electron microscope for substrate (wafer) edge and backside defect inspection or defect review. However, it would be recognized that the invention has a much broader range of applicability. A system and method in accordance with the present invention provides an operation stage for substrate edge inspection or review. The inspection region includes top near edge, to bevel, apex, and bottom bevel. The operation stage includes a supporting stand, a z-stage, an X-Y stage, an electrostatic chuck, a pendulum stage and a rotation track. The pendulum stage mount with the electrostatic chuck has the ability to swing from 0° to 180° while performing substrate top bevel, apex and bottom bevel inspection or review. In order to keep the substrate in focus and avoid a large position shift during altering the substrate observation angle by rotation the pendulum stage, one embodiment of the present invention discloses a method such that the rotation axis of the pendulum stage consist of the tangent of upper edge of the substrate to be inspected. The electrostatic chuck of the present invention has a diameter smaller than which of the substrate to be inspected. During the inspection process the substrate on the electrostatic chuck may be rotated about the central axis on the electrostatic chuck to a desired position, this design insures all position on the bevel and apex are able to be inspected. | 06-10-2010 |
20100150429 | E-BEAM DEFECT REVIEW SYSTEM - The present invention relates to a defect review system, and/or particularly, to an apparatus and method of defect review sampling, review method and classification on a semiconductor wafer or a pattern lithography reticle during integrated circuit fabrication. These objects are achieved in comparing a reviewed image with a reference image pick-up through a smart sampling filter. A clustering computer system base on high speed network will provide data cache and save operation time and memory. A smart review sampling filter automatically relocate abnormal pattern or defects and classify the device location extracted from design database and/or from golden die image on the same substrate. The column of the present defect review system is comprised of the modified SORIL type objective lens. This column provides solution of improving throughput during sample review, material identification better image quality, and topography image of defect. One embodiment of the present invent adopts an optical auto focusing system to compromise micro height variation due wafer surface topography. And another embodiment adopts surface charge control system to regulate the charge accumulation due to electron irradiation during the review process. | 06-17-2010 |
20100158317 | METHOD AND SYSTEM FOR DETERMINING A DEFECT DURING SAMPLE INSPECTION INVOLVING CHARGED PARTICLE BEAM IMAGING - A method for determining a defect during sample inspection involving charged particle beam imaging transforms a target charged particle microscopic image and its corresponding reference charged particle microscopic images each into a plurality of feature images, and then compares the feature images against each other. Each feature image captures and stresses a specific feature which is common to both the target and reference images. The feature images produced by the same operator are corresponding to each other. A distance between corresponding feature images is evaluated. Comparison between the target and reference images is made based on the evaluated distances to determine the presence of a defect within the target charged particle microscopic image. | 06-24-2010 |
20100158346 | METHOD AND SYSTEM OF CLASSIFYING DEFECTS ON A WAFER - Method of classifying the defects on a wafer having some same chips and corresponding system. After receiving images formed by scanning the wafer using a charged particle beam, these images are examined such that both defective images and defect-free images are found. Then, the defect-free images are translated into a simulated layout of the chip, or a database is used to provide the simulated layout of the chip. Finally, the defects on the defective images are classified by comparing the images with the simulated layout of the chip. The system has some modules separately corresponds to the steps of the method. | 06-24-2010 |
20100181492 | CHARGED PARTICLE BEAM IMAGING METHOD AND SYSTEM THEREOF - The method includes scanning a sample in at least one first scan line using a first charged particle beam probe; scanning the sample in at least one second scan line using a second charged particle beam probe, and scanning the sample in at least one third scan line using the first charged particle beam probe. The first or second charged particle beam probe is defocused by a control module of the imaging system through adjusting a condenser lens module, an objective lens module, a sample stage of the imaging system, or their combination. An image of the sample is selectively formed from the first, second and third scan lines. The first and the second charged particle beams induce a first charging condition and a second charging condition on the sample surface respectively. The second charging condition can enhance, mitigate, eliminate, reverse or have no effect on the first charging condition. | 07-22-2010 |
20100246929 | METHOD AND SYSTEM FOR DETERMINING A DEFECT DURING CHARGED PARTICLE BEAM INSPECTION OF A SAMPLE - A method for determining a defect during charged particle beam inspection of a sample locates at least one examination region within a charged particle microscopic image of the sample by making reference to a database graphic of the sample corresponding to the charged particle microscopic image. Each located examination region concerns at least one element of the sample, and each element has at least one characteristic in common. At least one point response value is then generated for each point in the located examination regions. The presence of a defect at the location of the concerned point is then determined by applying at least one decision tree operator to the generated point response values of the concerned point. Applications of the proposed method as a computing agent and a charged particle beam inspection system are also disclosed. | 09-30-2010 |
20100258722 | CHARGED PARTICLE BEAM IMAGING ASSEMBLY AND IMAGING METHOD THEREOF - A method for enhancing the quality of a charged particle microscopic image of a sample is disclosed. The image is formed by a charged particle beam imaging system. The method comprising: scanning, using a first scanning beam, a surface of the sample in at least one first scan line; and scanning, using a second scanning beam, the sample surface in at least one second scan line, wherein said second scanning beam is scanned across said sample surface during a time interval between the end of said first scan lines and the beginning of the next said first scan lines. Application of the proposed method as a charged particle beam imaging system is also disclosed. | 10-14-2010 |
20100278416 | Method for Inspecting Overlay Shift Defect during Semiconductor Manufacturing and Apparatus Thereof - A method of inspecting for overlay shift defects during semiconductor manufacturing is disclosed. The method can include the steps of providing a charged particle microscopic image of a sample, identifying an inspection pattern period in the charged particle microscopic image, averaging the charged particle microscopic image by using the inspection pattern period to form an averaged inspection pattern period, estimating an average width from the averaged inspection pattern period, and comparing the average width with a predefined threshold value to determine the presence of an overlay shift defect. | 11-04-2010 |
20100327160 | METHOD FOR EXAMINING A SAMPLE BY USING A CHARGED PARTICLE BEAM - A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area. | 12-30-2010 |
20110036981 | CHARGED PARTICLE BEAM INSPECTION METHOD - An imaging method and apparatus for forming images of substantially the same area on a sample for defect inspection within the area are disclosed. The disclosed method includes line-scanning the charged particle beam over the area to form a plurality of n*Y scan lines by repeatedly forming a group of n scan lines for Y times. During the formation of each group of n scan lines, an optical beam is, from one line scan to another, selectively illuminated on the area prior to or simultaneously with scanning of the charged particle beam. In addition, during the formation of each group of n scan lines, a condition of illumination of the optical beam selectively changes from one line scan to another. The conditions at which individual n scan lines are formed are repeated for the formation of all Y groups. | 02-17-2011 |
20110260055 | Dynamic Focus Adjustment with Optical Height Detection Apparatus in Electron Beam system - The present invention generally relates to dynamic focus adjustment for an image system. With the assistance of a height detection sub-system, present invention provides an apparatus and methods for micro adjusting an image focusing according the specimen surface height variation by altering the field strength of an electrostatic lens between objective lens and sample stage/or a bias voltage applied to the sample surface. Merely by way of example, the invention has been applied to a scanning electron inspection system. But it would be recognized that the invention could apply to other system using charged particle beam as observation tool with a height detection apparatus. | 10-27-2011 |
20120027287 | METHOD AND SYSTEM OF CLASSIFYING DEFECTS ON A WAFER - A method of classifying the defects on a wafer having some same chips and corresponding system is provided. After receiving images formed by scanning the wafer using a charged particle beam, these images are examined such that both defective images and defect-free images are found. Then, the defect-free images are translated into a simulated layout of the chip, or a database is used to provide the simulated layout of the chip. Finally, the defects on the defective images are classified by comparing the images with the simulated layout of the chip. The system has some modules separately corresponds to the steps of the method. | 02-02-2012 |
20120070067 | Method for Inspecting Overlay Shift Defect during Semiconductor Manufacturing and Apparatus Thereof - A method for inspecting overlay shift defect during semiconductor manufacturing is disclosed herein and includes a step for providing a charged particle microscopic image of a sample, a step for identifying an inspection pattern measure in the charged particle microscopic image, a step for averaging the charged particle microscopic image by using the inspection pattern measure to form an averaged inspection pattern measure, a step for estimating an average width from the averaged inspection pattern measure, and a step for comparing the average width with a predefined threshold value to determine the presence of the overlay shift defect. | 03-22-2012 |
20120212601 | METHOD AND SYSTEM FOR MEASURING CRITICAL DIMENSION AND MONITORING FABRICATION UNIFORMITY - A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time. | 08-23-2012 |
20120273678 | METHOD FOR EXAMINING A SAMPLE BY USING A CHARGED PARTICLE BEAM - A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area. | 11-01-2012 |
20130182939 | METHOD AND SYSTEM FOR MEASURING CRITICAL DIMENSION AND MONITORING FABRICATION UNIFORMITY - A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time. | 07-18-2013 |
20130188037 | METHOD AND SYSTEM FOR MEASURING CRITICAL DIMENSION AND MONITORING FABRICATION UNIFORMITY - A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time. | 07-25-2013 |
20130202186 | METHOD AND SYSTEM FOR MEASURING CRITICAL DIMENSION AND MONITORING FABRICATION UNIFORMITY - A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time. | 08-08-2013 |
20140291510 | Charged Particle Beam Apparatus - The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput. | 10-02-2014 |
20140291517 | Dynamic Focus Adjustment with Optical Height Detection Apparatus in Electron Beam System - The present invention generally relates to dynamic focus adjustment for an image system. With the assistance of a height detection sub-system, present invention provides an apparatus and methods for micro adjusting an image focusing according the specimen surface height variation by altering the field strength of an electrostatic lens between objective lens and sample stage/or a bias voltage applied to the sample surface. Merely by way of example, the invention has been applied to a scanning electron inspection system. But it would be recognized that the invention could apply to other system using charged particle beam as observation tool with a height detection apparatus. | 10-02-2014 |
20140321730 | METHOD AND SYSTEM OF CLASSIFYING DEFECTS ON A WAFER - A method of classifying the defects on a wafer having some same chips and corresponding system is provided. After receiving images formed by scanning the wafer using a charged particle beam, these images are examined such that both defective images and defect-free images are found. Then, the defect-free images are translated into a simulated layout of the chip, or a database is used to provide the simulated layout of the chip. Finally, the defects on the defective images are classified by comparing the images with the simulated layout of the chip. The system has some modules separately corresponds to the steps of the method. | 10-30-2014 |
20150083912 | Charged Particle Beam Apparatus - The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput. | 03-26-2015 |