Itonaga
Kazuchiro Itonaga, Tokyo JP
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20130278807 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC EQUIPMENT - A backside illumination type solid-state imaging device includes stacked semiconductor chips which are formed such that two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit is formed with a pixel array and a first multi-layered wiring layer, and a second semiconductor chip unit is formed with a logic circuit and a second multi-layered wiring layer, a connection wire which connects the first semiconductor chip unit and the second semiconductor chip unit, and a first shield wire which shields adjacent connection wires in one direction therebetween. | 10-24-2013 |
Kazuichiro Itonaga, Kanagawa JP
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20090098679 | CMOS SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME AS WELL AS DRIVE METHOD OF CMOS SOLID-STATE IMAGING DEVICE - A CMOS solid-state imaging device configured to restrain the occurrence of white spots and dark current caused by pixel defects, and also to increase the saturation signal amount. | 04-16-2009 |
20100288911 | SOLID-STATE IMAGING DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE - A solid state imaging device that includes a semiconductor substrate having a plurality of photodiodes thereon and a first wiring portion, a second wiring portion and a third wiring portion, a first wiring layer over the semiconductor substrate and which includes a plurality of metal films and extends across all the wiring portions, and a second wiring layer over the first wiring layer and which extends across the first wiring portion and the second wiring portion. | 11-18-2010 |
20130241019 | SOLID-STATE IMAGING DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE - A solid state imaging device that includes a semiconductor substrate having a plurality of photodiodes thereon and a first wiring portion, a second wiring portion and a third wiring portion, a first wiring layer over the semiconductor substrate and which includes a plurality of metal films and extends across all the wiring portions, and a second wiring layer over the first wiring layer and which extends across the first wiring portion and the second wiring portion. | 09-19-2013 |
Kazuichiroh Itonaga, Tokyo JP
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20120147207 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a supporting substrate that includes a concave portion, a solid-state imaging chip that is bonded on the supporting substrate so as to seal the concave portion in a view-angle region, a stress film that is formed on the surface of the solid-state imaging chip, and an imaging surface curved toward the concave portion at least in the view-angle region. | 06-14-2012 |
20120153419 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A semiconductor device, which is configured as a backside illuminated solid-state imaging device, includes a stacked semiconductor chip which is formed by bonding two or more semiconductor chip units to each other and in which, at least, a pixel array and a multi-layer wiring layer are formed in a first semiconductor chip unit and a logic circuit and a multi-layer wiring layer are formed in a second semiconductor chip unit; a semiconductor-removed region in which a semiconductor section of a part of the first semiconductor chip unit is completely removed; and a plurality of connection wirings which is formed in the semiconductor-removed region and connects the first and second semiconductor chip units to each other. | 06-21-2012 |
20140217542 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A semiconductor device, which is configured as a backside illuminated solid-state imaging device, includes a stacked semiconductor chip which is formed by bonding two or more semiconductor chip units to each other and in which, at least, a pixel array and a multi-layer wiring layer are formed in a first semiconductor chip unit and a logic circuit and a multi-layer wiring layer are formed in a second semiconductor chip unit; a semiconductor-removed region in which a semiconductor section of a part of the first semiconductor chip unit is completely removed; and a plurality of connection wirings which is formed in the semiconductor-removed region and connects the first and second semiconductor chip units to each other. | 08-07-2014 |
Kazunobu Itonaga, Takatsuki-Shi JP
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20120095353 | PULSE WAVE ANALYSIS DEVICE AND RECORDING MEDIUM - A pulse wave analysis device stores a pulse waveform for multiple beats, and calculates a pulse wave analysis index by analyzing the pulse waveform for multiple beats. In the calculation of the pulse wave analysis index, pulse waveform shapes of each beat that constitute the pulse waveform for multiple beats are integrated, and beats for which a degree of approximation between the integrated pulse waveform shape and the pulse waveform shape of the beat is low are excluded as targets of calculation of the pulse wave analysis index. | 04-19-2012 |
Kazunobu Itonaga, Kyoto JP
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20090151478 | ARRAY TYPE CAPACITANCE SENSOR - In an array type capacitance sensor ( | 06-18-2009 |
Makoto Itonaga, Yokohama-Shi JP
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20120002712 | EQUALIZER AND EQUALIZATION METHOD - A linear equalizer unit sequentially subjects a signal to be processed to linear equalization. A temporary decision unit sequentially subjects a signal subjected to linear equalization by the linear equalizer unit to temporary decision. A nonlinear equalizer unit derives a plurality of coefficients using a signal subjected to temporary decision as a teacher signal and sequentially subject a signal subjected to linear equalization by the linear equalizer unit to nonlinear equalization based on the plurality of coefficients. | 01-05-2012 |
20120288408 | SAMPLE ANALYSIS DISC AND METHOD OF PRODUCING SAMPLE ANALYSIS DISC - A sample analysis disc has concave sections and convex sections formed alternately in a track area of a disc surface. Labeled beads are immobilized to the track area. Each labeled bead has a biopolymer bound thereto. Only one of the labeled beads is allowed to be filled in each concave section. | 11-15-2012 |
20160033486 | SAMPLE ANALYSIS DEVICE AND CAPTURING METHOD FOR EXOSOMES - A recessed portion and a protruding portion arranged periodically are formed on a base portion. In the recessed portion, an antibody that binds to an antigen existing on a surface of each exosome to be detected is immobilized and then caused to bind to the exosomes. The width of the protruding portion is smaller than the average particle diameter of the exosomes. | 02-04-2016 |
Masafumi Itonaga, Watarai-Gun JP
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20080210530 | AUTOMATIC TRANSMISSION SWITCH - An automatic transmission switch includes a fixed member provided with a fixed-side contact, and a movable member provided with a movable-side contact. The movable-side contact includes an intermittent contact portion with respect to the fixed-side contact. The contact portion extends along a moving direction of the movable member. The movable member is connected to an automatic transmission, and if the movable member is turned according to a switching operation of a shift lever, the movable member brings the fixed-side contact and the movable-side contact into contact with each other and separates them from each other. The movable-side contact is fixed to the movable member. The fixed member is provided with a coil spring which biases the fixed-side contact toward the movable-side contact. | 09-04-2008 |
Masafumi Itonaga, Aichi JP
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20130093413 | SENSOR APPARATUS - A sensor apparatus for detecting a position of an axially movable camshaft is provided. The sensor apparatus includes a coil block including a detection coil wound along an axial direction of the camshaft to define a bore into which the camshaft is inserted, and a control unit electrically connected to the detection coil and designed to output a signal based on a change in inductance of the detection coil. | 04-18-2013 |
Masashi Itonaga, Kumamoto JP
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20140041805 | SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY APPARATUS - Provided is a substrate processing apparatus in which the concentration of processing gas is matched in a substrate surface at the time of initiating the ejection of the processing gas from a gas supply unit. The gas supply unit is provided with a gas ejecting surface facing the wafer disposed on a disposition unit. The gas supply unit is also provided with gas flow paths, and a flow path length and a flow path diameter of the diverged gas flow paths are set such that periods of time for gas flowing from a gas supply hole to a plurality of gas ejecting holes formed on the gas ejecting surface are matched with each other. Thus, the timings when the processing gas reaches the respective gas ejecting holes immediately after initiating the ejection of the processing gas are matched. | 02-13-2014 |
20140083614 | SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY APPARATUS - The gas supply unit includes first gas flow paths having an upstream side communicated with a common first gas supply hole and diverged on the way to have a downstream side, and second gas flow paths having an upstream side communicated with a common second gas supply hole and diverged on the way to have a downstream side. A flow path length and a flow path diameter of each of the diverged first gas flow paths and the diverged second gas flow paths are set such that periods of time for gas flowing from the first gas supply hole to the respective first gas ejecting holes are matched with each other, and periods of time for gas flowing from the second gas supply hole to the respective second gas ejecting holes are matched with each other. | 03-27-2014 |
20150246329 | PROCESSING GAS GENERATING APPARATUS, PROCESSING GAS GENERATING METHOD, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM - The present disclosure provides an apparatus for generating a processing gas by bubbling a raw material liquid with a carrier gas. The processing gas generated by the bubbling is taken out from a vapor-phase portion above a liquid-phase portion of the raw material liquid through a taking-out unit. A first temperature adjusting unit performs a temperature adjustment of the liquid-phase portion and a second temperature adjusting unit performs a temperature adjustment of the vapor-phase portion such that the temperature of the vapor-phase portion is higher than the temperature of the liquid-phase portion. | 09-03-2015 |
Shuji Itonaga, Kanagawa JP
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20140042450 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device is provided that includes a semiconductor layer and an electrode coupled to a semiconductor layer. The electrode includes first and second end portions, the first end portion being closer to the semiconductor layer than the second end portion. The first end portion is formed to have crystals of a first grain size, and the second end portion is formed to have crystals of a second grain size that is larger than the first grain size. | 02-13-2014 |
20140284611 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a method for manufacturing a semiconductor light-emitting device includes growing a semiconductor film including a group III nitride semiconductor on a silicon substrate, dividing the grown semiconductor film into a plurality of sections by selectively removing the semiconductor film, forming an aluminum film to cover the semiconductor film, removing the aluminum film selectively, oxidizing the remained aluminum film, and removing the silicon substrate. | 09-25-2014 |
Shuji Itonaga, Kanagawa-Ken JP
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20120100695 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device according to one embodiment includes attaching a front-side protecting member to a first main surface of a semiconductor wafer having an element region formed therein; laser-dicing the semiconductor wafer by applying a laser beam from a second main surface opposite to the first main surface of the semiconductor wafer; forming a backside metal film on the second main surface of the semiconductor wafer; and pressing a spherical surface against the front-side protecting member to expand the front-side protecting member and form individually divided semiconductor chips having the backside metal film attached thereto. | 04-26-2012 |
20120299046 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a light emitting layer, a second semiconductor layer of a second conductivity type, a first electrode layer and a second electrode layer. The first semiconductor layer includes a first portion and a second portion thicker than the first portion. The second portion includes a side surface rising from a major surface of the first portion. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode layer is provided along the major surface of the first portion and is in contact with the side surface of the second portion. The second electrode layer is provided on the second semiconductor layer. | 11-29-2012 |
20130032838 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device having a base, a mounting material and a chip of a semiconductor light emitting element is provided. The mounting material is provided on the base. The chip of the semiconductor light emitting element is fixed onto the base via the mounting material. The chip of the semiconductor light emitting element is provided with a sapphire substrate, an active region, a light shielding portion and anode and cathode electrodes for supplying an electric power to the active region. The active region is provided on the sapphire substrate and has a light emitting layer for emitting light by supplying electric power. The light shielding portion is formed on the sapphire substrate on the side of the mounting material. The light shielding portion prevents the mounting material from being irradiated with the light produced in the light emitting layer. | 02-07-2013 |
20130161674 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting element includes a stacked body, a metal reflection layer and a metal pad portion. The stacked body is made of In | 06-27-2013 |
20140284637 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a method for manufacturing a semiconductor light emitting device includes performing plasma processing of a stacked body. The stacked body has a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer. The plasma processing is performed on a surface of the stacked body where the second semiconductor layer is exposed such that the second semiconductor layer remains. The first semiconductor layer includes gallium and nitrogen. The second semiconductor layer includes aluminum and nitrogen. The method includes forming a plurality of protrusions by performing wet etching of the surface after the plasma processing is performed. At least a lower portion of the plurality of protrusions is made of the first semiconductor layer. | 09-25-2014 |
20140284654 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a semiconductor film, an electrode, a passivation film, a sealing resin body, and an intermediate film. The semiconductor film contains a Group III nitride semiconductor. The electrode is connected to a first surface of the semiconductor film. The passivation film covers an end surface of the semiconductor film and the first surface. The sealing resin body covers the first surface and a side surface of the electrode to leave a second surface of the semiconductor film exposed. The intermediate film is provided between the passivation film and the sealing resin body. The absolute value of the difference between an internal stress of the intermediate film and that of the sealing resin body is less than the absolute value of the difference between an internal stress of the passivation film and that of the sealing resin body. | 09-25-2014 |
Shuji Itonaga, Yokohama JP
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20160079112 | MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing apparatus includes a first supporting section to support a first tape section. The first tape section has a first surface facing away from the first supporting section. For example, a semiconductor chip can be disposed on the first surface. A second supporting section of the apparatus supports a second tape section in a facing arrangement with the first tape section. The second tape section has a second surface facing away from the second supporting section. For example, a semiconductor chip can be transferred from the first surface to the second surface in a manufacturing process. A ring element is between the first and second tape sections and surrounds a space between the first and second tape sections. The ring element has a port allowing fluid communication between the space and an outlet port. | 03-17-2016 |
Yuichi Itonaga, Obu JP
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20140292379 | OUTPUT CIRCUIT - An output circuit includes: a first PMOS transistor and a second PMOS transistor connected in series between a high potential side power source and an output node; a first NMOS transistor and a second NMOS transistor connected in series between a low potential side power source and the output node; a first capacitive coupling part connected between a gate of the first PMOS transistor and gates of the second PMOS transistor and the second NMOS transistor; and a second capacitive coupling part connected between a gate of the first NMOS transistor and gates of the second NMOS transistor and the second PMOS transistor, a first bias voltage is applied to the gate terminal of the second PMOS transistor, and a second bias voltage is applied to the gate terminal of the second NMOS transistor. | 10-02-2014 |
20140333370 | OUTPUT CIRCUIT AND VOLTAGE SIGNAL OUTPUT METHOD - An output circuit includes: a first PMOS transistor and a second PMOS transistor connected in series between a high potential side power supply and an output node; | 11-13-2014 |