Il-Sup
Il-Sup Choi, Hwaseong-Si KR
Patent application number | Description | Published |
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20130319608 | METHODS OF COATING AN ELECTROLYTE LAYER ON A SUBSTRATE AND METHODS OF MANUFACTURING ELECTROWETTING DISPLAY BY USING THE SAME - A method of coating an electrolyte layer on a substrate includes forming a hydrophobic layer on an upper surface of the substrate that has a coating area, forming a hydrophilic region having a shape surrounding an outside of the coating area, and forming the electrolyte layer to cover the hydrophobic layer and the hydrophilic region. | 12-05-2013 |
Il-Sup Choi, Yongin-Si KR
Patent application number | Description | Published |
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20130260045 | APPARATUS FOR COATING AND METHOD FOR COATING USING THE SAME - An exemplary embodiment of the present invention discloses a coating apparatus including a stage configured to receive a substrate and a coating slit part. The coating slit part includes a guide member, a first body, a second body, and a discharge nozzle. The coating slit part is configured to dispose a coating material on the substrate. | 10-03-2013 |
Il-Sup Kim, Suwon-Si KR
Patent application number | Description | Published |
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20130143372 | METHODS OF FORMING PATTERNS OF A SEMICONDUCTOR DEVICE - Methods of forming patterns of a semiconductor device are provided. The methods may include forming a hard mask film on a semiconductor substrate. The methods may include forming first and second sacrificial film patterns that are spaced apart from each other on the hard mask film. The methods may include forming a first spacer on opposing sidewalls of the first sacrificial film pattern and a second spacer on opposing sidewalls of the second sacrificial film pattern. The methods may include removing the first and second sacrificial film patterns. The methods may include trimming the second spacer such that a line width of the second spacer becomes smaller than a line width of the first spacer. The methods may include forming first and second hard mask film patterns by etching the hard mask film using the first spacer and the trimmed second spacer as an etch mask. | 06-06-2013 |
20150076617 | METHODS OF FORMING PATTERNS OF A SEMICONDUCTOR DEVICE - Methods of forming patterns of a semiconductor device are provided. The methods may include forming a hard mask film on a semiconductor substrate. The methods may include forming first and second sacrificial film patterns that are spaced apart from each other on the hard mask film. The methods may include forming a first spacer on opposing sidewalls of the first sacrificial film pattern and a second spacer on opposing sidewalls of the second sacrificial film pattern. The methods may include removing the first and second sacrificial film patterns. The methods may include trimming the second spacer such that a line width of the second spacer becomes smaller than a line width of the first spacer. The methods may include forming first and second hard mask film patterns by etching the hard mask film using the first spacer and the trimmed second spacer as an etch mask. | 03-19-2015 |