Patent application number | Description | Published |
20150187566 | HARDMASK COMPOSITION, METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE PATTERNS - A hardmask composition includes a polymer including a moiety represented by one of the following Chemical Formulae 1a to 1c, a monomer represented by the following Chemical Formula 2 and a solvent. | 07-02-2015 |
20150187589 | HARDMASK COMPOSITION AND METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION - A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent. | 07-02-2015 |
20150225508 | MODIFIED HYDROGENATED POLYSILOXAZANE, COMPOSITION COMPRISING SAME FOR FORMING SILICA-BASED INSULATION LAYER, METHOD FOR PREPARING COMPOSITION FOR FORMING SILICA-BASED INSULATION LAYER, SILICA-BASED INSULATION LAYER, AND METHOD FOR PREPARING SILICA-BASED INSULATION LAYER - Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer. | 08-13-2015 |
20150268558 | MONOMER FOR HARDMASK COMPOSITION, HARDMASK COMPOSITION INCLUDING THE MONOMER, AND METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION - A monomer for a hardmask composition, a hardmask composition, and a method of forming patterns, the monomer being represented by the following Chemical Formula 1: | 09-24-2015 |
20150274980 | COMPOSITION FOR FORMING SILICA-BASED INSULATING LAYER, METHOD FOR PREPARING COMPOSITION FOR FORMING SILICA-BASED INSULATING LAYER, SILICA-BASED INSULATING LAYER, AND METHOD FOR MANUFACTURING SILICA-BASED INSULATING LAYER - Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced. | 10-01-2015 |
20150329718 | HARDMASK COMPOSITION AND METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION - A hardmask composition and a method of forming patterns, the composition including a solvent; and a polymer including a moiety represented by the following Chemical Formula 1, | 11-19-2015 |
20150332931 | HARDMASK COMPOSITION AND METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION - A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent. | 11-19-2015 |
20160090449 | POLYMER, ORGANIC LAYER COMPOSITION, ORGANIC LAYER, AND METHOD OF FORMING PATTERNS - A polymer including a moiety represented by Chemical Formula 1, an organic layer composition including the polymer, an organic layer manufactured from the organic layer composition, and a method of forming patterns using the organic layer composition are provided. | 03-31-2016 |