Patent application number | Description | Published |
20090017605 | METHODS FOR DOPING NANOSTRUCTURED MATERIALS AND NANOSTRUCTURED THIN FILMS - A method for introducing one or more impurities into nano-structured materials. The method includes providing a nanostructured material having a feature size of about 100 nm and less. The method includes subjecting a surface region of the nanostructured material to one or more impurities to form a first region having a first impurity concentration within a vicinity of the surface region. In a specific embodiment, the method includes applying a driving force to one or more portions of at least the nanostructured material to cause the first region to form a second region having a second impurity concentration. | 01-15-2009 |
20090087370 | METHOD AND MATERIAL FOR PURIFYING IRON DISILICIDE FOR PHOTOVOLTAIC APPLICATION - A method for processing iron disilicide for manufacture photovoltaic devices. The method includes providing a first sample of iron disilicide comprising at least an alpha phase entity, a beta phase entity, and an epsilon phase entity. The method includes maintaining the first sample of iron disilicide in an inert environment and subjects the first sample of iron disilicide to a thermal process to form a second sample of iron disilicide. The second sample of iron disilicide comprises substantially beta phase iron disilicide and is characterized by a first particle size. The method includes introducing an organic solvent to the second sample of iron disilicide, forming a first mixture of material comprising the second sample of iron disilicide and the organic solvent. The method processed the first mixture of material including the second sample of iron disilicide using a grinding process. The method converted the second sample of iron disilicide having the first particle size to a third sample of iron disilicide having a second particle size. The organic solvent is removed and output a third sample of iron disilicide characterized by the second particle size and greater than about 90% of the beta phase entity. | 04-02-2009 |
20090087939 | COLUMN STRUCTURE THIN FILM MATERIAL USING METAL OXIDE BEARING SEMICONDUCTOR MATERIAL FOR SOLAR CELL DEVICES - A thin film material structure for solar cell devices. The thin film material structure includes a thickness of material comprises a plurality of single crystal structures. In a specific embodiment, each of the single crystal structure is configured in a column like shape. The column like shape has a dimension of about 0.01 micron to about 10 microns characterizes a first end and a second end. An optical absorption coefficient of greater than 10 | 04-02-2009 |
20090117718 | METHODS FOR INFUSING ONE OR MORE MATERIALS INTO NANO-VOIDS IF NANOPOROUS OR NANOSTRUCTURED MATERIALS - A method of forming composite nanostructures using one or more nanomaterials. The method provides a nanostructure material having a surface region and one or more nano void regions within a first thickness in the surface region. The method subjects the surface region of the nanostructure material with a fluid. An external energy is applied to the fluid and/or the nanostructure material to drive in a portion of the fluid into one or more of the void regions and cause the one or more nano void regions to be substantially filled with the fluid and free from air gaps. | 05-07-2009 |
20090250105 | THIN FILM METAL OXIDE BEARING SEMICONDUCTOR MATERIAL FOR SINGLE JUNCTION SOLAR CELL DEVICES - A structure for a single junction solar cell. The structure includes a substrate member having a surface region. The structure includes a first electrode structure overlying the surface region of the substrate member. A P absorber layer is formed overlying the first electrode structure. In a specific embodiment, the P absorber layer has a P | 10-08-2009 |
20090301562 | HIGH EFFICIENCY PHOTOVOLTAIC CELL AND MANUFACTURING METHOD - A method for forming a thin film photovoltaic device includes providing a transparent substrate comprising a surface region and forming a first electrode layer overlying the surface region. Additionally, the method includes forming a copper indium material comprising an atomic ratio of Cu:In ranging from about 1.35:1 to about 1.60:1 by at least sputtering a target comprising an indium copper material. The method further includes subjecting the copper indium material to thermal treatment process in an environment containing a sulfur bearing species. Furthermore, the method includes forming a copper indium disulfide material from at least the thermal treatment process of the copper indium material. Moreover, the method includes forming a window layer overlying the copper indium disulfide material. | 12-10-2009 |
20090320920 | HIGH EFFICIENCY PHOTOVOLTAIC CELL AND MANUFACTURING METHOD FREE OF METAL DISULFIDE BARRIER MATERIAL - A method for forming a thin film photovoltaic device includes providing a transparent substrate comprising a surface region and forming a first electrode layer overlying the surface region. Additionally, the method includes forming a copper indium material comprising an atomic ratio of Cu:In ranging from about 1.35:1 to about 1.60:1 by at least sputtering a target comprising an indium copper material. The method further includes subjecting the copper indium material to thermal treatment process in an environment containing a sulfur bearing species. Furthermore, the method includes forming a copper indium disulfide material from at least the thermal treatment process of the copper indium material and maintaining an interface region between the copper indium disulfide material and electrode substantially free from a metal disulfide layer, which has different semiconductor characteristics from the copper indium disulfide material. Moreover, the method includes forming a window layer overlying the copper indium disulfide material. | 12-31-2009 |
20100051090 | FOUR TERMINAL MULTI-JUNCTION THIN FILM PHOTOVOLTAIC DEVICE AND METHOD - A multi-junction photovoltaic cell device. The device includes a lower cell and an upper cell, which is operably coupled to the lower cell. In a specific embodiment, the lower cell includes a lower glass substrate material, e.g., transparent glass. The lower cell also includes a lower electrode layer made of a reflective material overlying the glass material. The lower cell includes a lower absorber layer overlying the lower electrode layer. In a specific embodiment, the absorber layer is made of a semiconductor material having a band gap energy in a range of Eg=0.7 to 1 eV, but can be others. In a specific embodiment, the lower cell includes a lower window layer overlying the lower absorber layer and a lower transparent conductive oxide layer overlying the lower window layer. The upper cell includes a p+ type transparent conductor layer overlying the lower transparent conductive oxide layer. In a preferred embodiment, the p+ type transparent conductor layer is characterized by traversing electromagnetic radiation in at least a wavelength range from about 700 to about 630 nanometers and filtering electromagnetic radiation in a wavelength range from about 490 to about 450 nanometers. In a specific embodiment, the upper cell has an upper p type absorber layer overlying the p+ type transparent conductor layer. In a preferred embodiment, the p type conductor layer made of a semiconductor material has a band gap energy in a range of Eg=1.6 to 1.9 eV, but can be others. The upper cell also has an upper n type window layer overlying the upper p type absorber layer, an upper transparent conductive oxide layer overlying the upper n type window layer, and an upper glass material overlying the upper transparent conductive oxide layer. | 03-04-2010 |
20100081230 | METHOD AND STRUCTURE FOR ADHESION OF ABSORBER MATERIAL FOR THIN FILM PHOTOVOLTAIC CELL - A method for forming a thin film photovoltaic device includes providing a transparent substrate comprising a surface region and forming a first electrode layer overlying the surface region. The method further includes forming a thin layer of copper gallium material overlying the first electrode layer to act as an intermediary adhesive layer to facilitate attachment to the first electrode layer. Additionally, the method includes forming a copper layer overlying the thin layer and forming an indium layer overlying the copper layer to form a multilayered structure and subjecting the multilayered structure to thermal treatment process with sulfur bearing species to form a copper indium disulfide alloy material. The copper indium disulfide alloy material comprises a copper:indium atomic ratio of about 1.2:1 to about 3.0:1 overlying a copper gallium disulfide material converted from the thin layer. Furthermore, the method includes forming a window layer overlying the copper indium disulfide alloy material. | 04-01-2010 |
20100122726 | METHOD AND STRUCTURE FOR THIN FILM PHOTOVOLTAIC CELL USING SIMILAR MATERIAL JUNCTION - A method for forming a thin film photovoltaic device. The method provides a transparent substrate including a surface region. A first electrode layer overlies the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. At least the multi-layered structure is subjected to a thermal treatment process in an environment containing a sulfur bearing species to forming a bulk copper indium disulfide. The bulk copper indium disulfide material has a surface region characterized by a copper poor surface region having a copper to indium atomic ratio of less than about 0.95:1 and n-type impurity characteristics. The bulk copper indium disulfide material excluding the copper poor surface region forms an absorber region and the copper poor surface region forms at least a portion of a window region for the thin film photovoltaic device. The method optionally forms a high resistivity transparent material having an intrinsic semiconductor characteristic overlying the copper poor surface region. A second electrode layer overlies the high resistivity transparent layer. | 05-20-2010 |
20100229921 | TANDEM PHOTOVOLTAIC CELL AND METHOD USING THREE GLASS SUBSTRATE CONFIGURATION - A tandem photovoltaic cell device. The device includes a lower cell configured for substantial independent operation of an upper cell. In a preferred embodiment, the lower cell has a lower glass substrate material and a lower electrode layer made of a reflective material overlying the glass material. The lower cell also has a lower absorber layer overlying the lower electrode layer. In a preferred embodiment, the absorber layer made of a first semiconductor material has a first band gap energy in a range of Eg=0.7 to 1.1 eV. The lower cell includes a lower window layer overlying the lower absorber layer, a lower transparent conductive oxide layer overlying the lower window layer, and a first optical coupling material comprising first ethylene vinyl acetate overlying the lower transparent conductive oxide layer. In a specific embodiment, the device also has the upper cell coupled to the lower cell. The upper cell has an intermediary glass substrate material, which has a thickness, a lower surface and an upper surface. In a specific embodiment, the thickness is about 1.1 millimeter and less. The lower surface is overlying the optical coupling material. The upper cell also has a first upper transparent conductor layer overlying the upper surface of the intermediary glass substrate material and an upper p type absorber layer overlying the first upper transparent conductor layer. The p type conductor layer is made of a second semiconductor material having a second band gap energy in a range of Eg=1.5 to 1.9 eV. The upper cell also has an upper n type window layer overlying the upper p type absorber layer. The upper cell has a second upper transparent conductive oxide layer overlying the upper n type window layer. The upper cell has a second optical coupling material comprising first ethylene vinyl acetate overlying the second upper transparent conductive oxide layer. The upper cell has an upper glass material overlying the upper transparent conductive oxide layer. | 09-16-2010 |
20110017257 | MULTI-JUNCTION SOLAR MODULE AND METHOD FOR CURRENT MATCHING BETWEEN A PLURALITY OF FIRST PHOTOVOLTAIC DEVICES AND SECOND PHOTOVOLTAIC DEVICES - A multi-junction solar module apparatus. The apparatus has a substrate member. The apparatus has a plurality of first photovoltaic devices arranged in a first spatial configuration, which is preferably disposed on a first planar region. In a specific embodiment, the plurality of first photovoltaic devices are numbered from 1 through N, where N is an integer greater than 1. Each of the plurality of first solar cells has a first bandgap characteristic. The apparatus has a plurality of second photovoltaic devices arranged in a second spatial configuration, which is preferably disposed in a second planar region. The plurality of second photovoltaic devices are numbered from 1 through M, where M is an integer greater than 1. In a preferred embodiment, N is not equal to M. Each of the second solar cells has a second band gap characteristic. In a specific embodiment, a first connector interconnects the plurality of first solar cells in a serial configuration. The first connector has a first terminal end and a second terminal end. A second connector interconnects the plurality of second solar cells in a serial configuration. The second connector has a first terminal end and a second terminal end. In a specific embodiment, a third connector connecting the second terminal end of the first connector and the first terminal end of the second connector. In a specific embodiment, a Vss node is coupled to the first terminal end of the first connector. In a specific embodiment, a Vdd node is coupled to the second terminal end of the second connector. In a preferred embodiment, N and M are selected to match a first current through the plurality of first solar cells and a second current through the plurality of second solar cells. | 01-27-2011 |
20110017298 | MULTI-JUNCTION SOLAR CELL DEVICES - A photovoltaic cell structure for manufacturing a photovoltaic device. The photovoltaic cell structure includes a substrate including a surface region. A first conductor layer overlies the surface region. The photovoltaic cell structure includes a lower cell structure. The lower cell structure includes a first P type absorber layer using a first semiconductor metal chalcogenide material and/or other semiconductor material overlying the first conductor layer. The first P type absorber material is characterized by a first bandgap ranging from about 0.5 eV to about 1.0 eV, a first optical absorption coefficient greater than about 10 | 01-27-2011 |
20110020564 | PROCESSING METHOD FOR CLEANING SULFUR ENTITIES OF CONTACT REGIONS - A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region and forming a first electrode layer overlying the surface region of the transparent substrate. The first electrode layer has an electrode surface region. In a specific embodiment, the method includes masking one or more portions of the electrode surface region using a masking layer to form an exposed region and a blocked region. The method includes forming an absorber layer comprising a sulfur entity overlying the exposed region and removing the mask layer. In a specific embodiment, the method causing formation of a plurality of metal disulfide species overlying the blocked region. In a specific embodiment, the metal disulfide species has a semiconductor characteristic. The method includes subjecting the plurality of metal disulfide species to electromagnetic radiation from a laser beam to substantially remove the metal disulfide species. The method includes exposing the blocked region free and clear from the metal disulfide | 01-27-2011 |
20110143487 | Method and Structure for Thin Film Tandem Photovoltaic Cell - A tandem photovoltaic cell. The tandem photovoltaic cell includes a bifacial top cell and a bottom cell. The top bifacial cell includes a top first transparent conductive oxide material. A top window material underlies the top first transparent conductive oxide material. A first interface region is disposed between the top window material and the top first transparent conductive oxide material. The first interface region is substantially free from one or more entities from the top first transparent conductive oxide material diffused into the top window material. A top absorber material comprising a copper species, an indium species, and a sulfur species underlies the top window material. A top second transparent conductive oxide material underlies the top absorber material. A second interface region is disposed between the top second transparent conductive oxide material and the top absorber material. The bottom cell includes a bottom first transparent conductive oxide material. A bottom window material underlies the first bottom transparent conductive oxide material. A bottom absorber material underlies the bottom window material. A bottom electrode material underlies the bottom absorber material. The tandem photovoltaic cell further includes a coupling material free from a parasitic junction between the top cell and the bottom cell. | 06-16-2011 |
20110168245 | Four Terminal Multi-Junction Thin Film Photovoltaic Device and Method - A multi-junction photovoltaic cell device. The device includes a lower cell and an upper cell, which is operably coupled to the lower cell. In a specific embodiment, the lower cell includes a lower glass substrate material, e.g., transparent glass. The lower cell also includes a lower electrode layer made of a reflective material overlying the glass material. The lower cell includes a lower absorber layer overlying the lower electrode layer. In a specific embodiment, the absorber layer is made of a semiconductor material having a band gap energy in a range of Eg=0.7 to 1 eV, but can be others. In a specific embodiment, the lower cell includes a lower window layer overlying the lower absorber layer and a lower transparent conductive oxide layer overlying the lower window layer. The upper cell includes a p+ type transparent conductor layer overlying the lower transparent conductive oxide layer. In a preferred embodiment, the p+ type transparent conductor layer is characterized by traversing electromagnetic radiation in at least a wavelength range from about 700 to about 630 nanometers and filtering electromagnetic radiation in a wavelength range from about 490 to about 450 nanometers. In a specific embodiment, the upper cell has an upper p type absorber layer overlying the p+ type transparent conductor layer. In a preferred embodiment, the p type conductor layer made of a semiconductor material has a band gap energy in a range of Eg=1.6 to 1.9 eV, but can be others. The upper cell also has an upper n type window layer overlying the upper p type absorber layer, an upper transparent conductive oxide layer overlying the upper n type window layer, and an upper glass material overlying the upper transparent conductive oxide layer. | 07-14-2011 |
20110244623 | RAPID THERMAL METHOD AND DEVICE FOR THIN FILM TANDEM CELL - A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first transparent electrode layer is formed overlying the surface region. A multilayered structure including a copper material and an indium material is formed overlying a electrode surface region. The multilayered structure is subjected to a plurality of sulfur bearing entities during a rapid thermal process to form an absorber material comprising a copper entity, an indium entity, and a sulfur entity. The rapid thermal process uses a ramp time ranging from about 10 Degrees Celsius/second to about 50 Degrees Celsius/second. In a specific embodiment, the first transparent electrode layer is maintained to a sheet resistance of less than or equal to about 10 Ohms/square centimeters and an optical transmission of 90 percent and greater | 10-06-2011 |
20110259739 | Method and System for Large Scale Manufacture of Thin Film Photovoltaic Devices Using Multi-Chamber Configuration - A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes using a first physical deposition process in the first process station to cause formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and using a second physical deposition process in the second process station to cause formation of a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films. These properties are used to determine and adjust process conditions for subsequent processes. | 10-27-2011 |
20110269257 | Method and System for Large Scale Manufacture of Thin Film Photovoltaic Devices Using Multi-Chamber Configuration - A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes using a first physical deposition process in the first process station to cause formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and using a second physical deposition process in the second process station to cause formation of a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films. These properties are used to determine and adjust process conditions for subsequent processes. | 11-03-2011 |
20110269262 | Method and System for Large Scale Manufacture of Thin Film Photovoltaic Devices Using Multi-Chamber Configuration - A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes using a first physical deposition process in the first process station to cause formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and using a second physical deposition process in the second process station to cause formation of a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films. These properties are used to determine and adjust process conditions for subsequent processes. | 11-03-2011 |
20110277830 | MULTI-JUNCTION SOLAR CELL DEVICES - A photovoltaic cell structure for manufacturing a photovoltaic device. The photovoltaic cell structure includes a substrate including a surface region. A first conductor layer overlies the surface region. The photovoltaic cell structure includes a lower cell structure. The lower cell structure includes a first P type absorber layer using a first semiconductor metal chalcogenide material and/or other semiconductor material overlying the first conductor layer. The first P type absorber material is characterized by a first bandgap ranging from about 0.5 eV to about 1.0 eV, a first optical absorption coefficient greater than about 10 | 11-17-2011 |
20110277836 | COLUMN STRUCTURE THIN FILM MATERIAL USING METAL OXIDE BEARING SEMICONDUCTOR MATERIAL FOR SOLAR CELL DEVICES - A thin film material structure for solar cell devices. The thin film material structure includes a thickness of material comprises a plurality of single crystal structures. In a specific embodiment, each of the single crystal structure is configured in a column like shape. The column like shape has a dimension of about 0.01 micron to about 10 microns characterizes a first end and a second end. An optical absorption coefficient of greater than 10 | 11-17-2011 |
20110277837 | BULK CHLORIDE SPECIES TREATMENT OF THIN FILM PHOTOVOLTAIC CELL AND MANUFACTURING METHOD - A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subjects at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material comprises one or more portions of copper indium disulfide material and a copper poor surface region characterized by a copper-to-indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface and one or more portions of the bulk copper indium disulfide material to a chlorine species to convert the copper poor surface from an n-type characteristic to a p-type characteristic and to convert any of the one or more portions of the bulk copper indium disulfide material having the copper-to-indium atomic ratio of less than about 0.95:1 from a n-type characteristic to an p-type characteristic. A window layer is formed overlying the copper indium disulfide material. | 11-17-2011 |
20110287574 | BULK SODIUM SPECIES TREATMENT OF THIN FILM PHOTOVOLTAIC CELL AND MANUFACTURING METHOD - A method for forming a thin film photovoltaic device is provided. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A chalcopyrite material is formed overlying the first electrode layer. In a specific embodiment, the chalcopyrite material comprises a copper poor copper indium disulfide region. The copper poor copper indium disulfide region having an atomic ratio of Cu:In of about 0.95 and less. The method includes compensating the copper poor copper indium disulfide region using a sodium species to cause the chalcopyrite material to change from an n-type characteristic to a p-type characteristic. The method includes forming a window layer overlying the chalcopyrite material and forming a second electrode layer overlying the window layer. | 11-24-2011 |
20110287575 | SULFIDE SPECIES TREATMENT OF THIN FILM PHOTOVOLTAIC CELL AND MANUFACTURING METHOD - A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region, forming a first electrode layer overlying the surface region, forming a copper layer overlying the first electrode layer and forming an indium layer overlying the copper layer to form a multi-layered structure. The multi-layered structure is subjected to a thermal treatment process in an environment containing a sulfur bearing species to forming a copper indium disulfide material. The copper indium disulfide material comprising a copper-to-indium atomic ratio ranging from about 1.2:1 to about 2:1 and a thickness of substantially copper sulfide material having a copper sulfide surface region. The thickness of the copper sulfide material is selectively removed to expose a surface region having a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface to a sulfide species to convert the copper poor surface from an n-type semiconductor characteristic to a p-type semiconductor characteristic. A window layer is formed overlying the copper indium disulfide material. | 11-24-2011 |
20110287576 | BULK COPPER SPECIES TREATMENT OF THIN FILM PHOTOVOLTAIC CELL AND MANUFACTURING METHOD - A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subject at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material includes one or more portions of copper indium disulfide material characterized by a copper-to-indium atomic ratio of less than about 0.95:1 and a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface and one or more portions of the bulk copper indium disulfide material to copper species to convert the copper poor surface from an n-type characteristic to a p-type characteristic and to convert any of the one or more portions of the bulk copper indium disulfide material having the copper-to-indium atomic ratio of less than about 0.95:1 from a p-type characteristic to an n-type characteristic. A window layer is formed overlying the copper indium disulfide material. | 11-24-2011 |
20110297218 | METHOD AND STRUCTURE FOR THIN FILM PHOTOVOLTAIC MATERIALS USING BULK SEMICONDUCTOR MATERIALS - A photovoltaic device and related methods. The device has a structured material positioned between an electron collecting electrode and a hole collecting electrode. An electron transporting/hole blocking material is positioned between the electron collecting electrode and the structured material. In a specific embodiment, negatively charged carriers generated by optical absorption by the structured material are preferentially separated into the electron transporting/hole blocking material. In a specific embodiment, the structured material has an optical absorption coefficient of at least 10 | 12-08-2011 |
20110312122 | METAL SPECIES SURFACE TREATMENT OF THIN FILM PHOTOVOLTAIC CELL AND MANUFACTURING METHOD - A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate including a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer overlying the copper layer to form a multi-layered structure. The method subjects at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species and form a copper indium disulfide material. The copper indium disulfide material includes a thickness of substantially copper sulfide material. The thickness of the copper sulfide material is removed to expose a surface region having a copper poor surface characterized by a copper to indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface to a metal cation species to convert the copper poor surface from an n-type semiconductor characteristic to a p-type semiconductor characteristic. A window layer is formed overlying the copper indium disulfide material. | 12-22-2011 |
20120028405 | METHOD AND MATERIAL FOR PROCESSING IRON DISILICIDE FOR PHOTOVOLTAIC APPLICATION - A method for providing a semiconductor material for photovoltaic devices, the method includes providing a sample of iron disilicide comprising approximately 90 percent or greater of a beta phase entity. The sample of iron disilicide is characterized by a substantially uniform first particle size ranging from about 1 micron to about 10 microns. The method includes combining the sample of iron disilicide and a binding material to form a mixture of material. The method includes providing a substrate member including a surface region and deposits the mixture of material overlying the surface region of the substrate. In a specific embodiment, the mixture of material is subjected to a post-deposition process such as a curing process to form a thickness of material comprising the sample of iron disilicide overlying the substrate member. In a specific embodiment, the thickness of material is characterized by a thickness of about the first particle size. | 02-02-2012 |
20120045886 | Methods for Infusing One or More Materials into Nano-Voids of Nanoporous or Nanostructured Materials - A method of forming composite nanostructures using one or more nanomaterials. The method provides a nanostructure material having a surface region and one or more nano void regions within a first thickness in the surface region. The method subjects the surface region of the nanostructure material with a fluid. An external energy is applied to the fluid and/or the nanostructure material to drive in a portion of the fluid into one or more of the void regions and cause the one or more nano void regions to be substantially filled with the fluid and free from air gaps. | 02-23-2012 |
20120285508 | FOUR TERMINAL MULTI-JUNCTION THIN FILM PHOTOVOLTAIC DEVICE AND METHOD - A multi junction photovoltaic cell device includes a lower cell and an upper cell operably coupled to the lower cell. The lower cell includes a lower glass substrate material, a lower electrode, and a first terminal coupled to the lower electrode through the lower glass substrate material. The lower cell includes a lower absorber characterized by a bandgap smaller than 1 eV overlying the lower electrode and a lower window overlying the lower absorber and a lower transparent-conductive oxide coupled to a second terminal overlying the lower window. The upper cell includes a p+-type transparent conductor coupled to a third terminal. The upper cell further has an upper p-type absorber with a bandgap in a range of 1.6 to 1.9 eV overlying the p+-type transparent conductor and has an upper n-type window overlying the upper p-type absorber, an upper transparent-conductive oxide coupled to a fourth terminal overlying the upper n-type window. | 11-15-2012 |
20140116508 | COLUMN STRUCTURE THIN FILM MATERIAL USING METAL OXIDE BEARING SEMICONDUCTOR MATERIAL FOR SOLAR CELL DEVICES - A thin film material structure for solar cell devices. The thin film material structure includes a thickness of material comprises a plurality of single crystal structures. In a specific embodiment, each of the single crystal structure is configured in a column like shape. The column like shape has a dimension of about 0.01 micron to about 10 microns characterizes a first end and a second end. An optical absorption coefficient of greater than 10 | 05-01-2014 |
20150072464 | METHOD AND STRUCTURE FOR THIN FILM TANDEM PHOTOVOLTAIC CELL - A tandem photovoltaic cell. The tandem photovoltaic cell includes a bifacial top cell and a bottom cell. The top bifacial cell includes a top first transparent conductive oxide material. A top window material underlies the top first transparent conductive oxide material. A first interface region is disposed between the top window material and the top first transparent conductive oxide material. The first interface region is substantially free from one or more entities from the top first transparent conductive oxide material diffused into the top window material. A top absorber material comprising a copper species, an indium species, and a sulfur species underlies the top window material. A top second transparent conductive oxide material underlies the top absorber material. A second interface region is disposed between the top second transparent conductive oxide material and the top absorber material. The bottom cell includes a bottom first transparent conductive oxide material. A bottom window material underlies the first bottom transparent conductive oxide material. A bottom absorber material underlies the bottom window material. A bottom electrode material underlies the bottom absorber material. The tandem photovoltaic cell further includes a coupling material free from a parasitic junction between the top cell and the bottom cell. | 03-12-2015 |