Hong-Gun
Hong-Gun Kim, Gyeonggi-Do KR
Patent application number | Description | Published |
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20080206954 | METHODS OF REDUCING IMPURITY CONCENTRATION IN ISOLATING FILMS IN SEMICONDUCTOR DEVICES - A method of fabricating a semiconductor device includes forming a lower device on a lower semiconductor substrate, and forming an interlayer insulating film on the lower device. An upper semiconductor substrate is formed on the interlayer insulating film such that the interlayer insulating film is between the lower and upper semiconductor substrates. Upper trenches are formed within the upper semiconductor substrate. An upper device isolating film is formed within the upper trenches. The upper device isolating film is irradiated with ultraviolet light having a wavelength configured to break chemical bonds of impurities in the upper device isolating film to reduce an impurity concentration thereof. | 08-28-2008 |
20090012221 | COMPOSITIONS INCLUDING PERHYDRO-POLYSILAZANE USED IN A SEMICONDUCTOR MANUFACTURING PROCESS - A film is formed on a substrate including conductive patterns or trenches using a composition that included a solvent and perhydro-polysilazane having a weight average molecular weight of about 1,800 to 3,000 and a molecular weight distribution of more than about 2.2 to about 3.0. The film is changed into a silicon oxide film, and then an opening is formed through the silicon oxide film. A contact is formed in the opening by filling the opening with conductive material. The silicon oxide film of perhydro-polysilazane having low molecular weight becomes dense and uniform. | 01-08-2009 |
20110037109 | SEMICONDUCTOR DEVICES INCLUDING LOWER AND UPPER DEVICE ISOLATION PATTERNS - In some embodiments, a semiconductor substrate includes trenches defining active regions. The semiconductor device further includes lower and upper device isolation patterns disposed in the trenches. An intergate insulation pattern and a control gate electrode are disposed on the semiconductor substrate to cross over the active regions. A charge storage electrode is between the control gate electrode and the active regions. A gate insulation pattern is between the charge storage electrode and the active regions, and the intergate insulation pattern directly contacts the upper device isolation pattern between the active regions. | 02-17-2011 |
Hong-Gun Kim, Suwon-Si KR
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20110207334 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes an improved technique of filling a trench to provide the resulting semiconductor device with better characteristics and higher reliability. The method includes forming a trench in a semiconductor layer, forming a first layer on the semiconductor layer using a silicon source and a nitrogen source to fill the trench, curing the first layer using an oxygen source, and annealing the second layer. The method may also be used to form other types of insulating layers such as an interlayer insulating layer. | 08-25-2011 |
20120034757 | METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING VARIOUS ISOLATION REGIONS - A method of fabricating a semiconductor device includes forming a first trench and a second trench in a semiconductor substrate, forming a first insulator to completely fill the first trench, the first insulator covering a bottom surface and lower sidewalls of the second trench and exposing upper sidewalls of the second trench, and forming a second insulator on the first insulator in the second trench. | 02-09-2012 |
Hong-Gun Kim, Hwaseong-Si KR
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20140134839 | METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH ELECTRODE SUPPORT PATTERNS - Methods include sequentially forming a first mold film, a first support film, a second mold film, and a second support film on a substrate, forming a contact hole through the second support film, the second mold film, the first support film and the first mold film, forming an electrode in the contact hole, and removing portions of the second support film, the second mold film and the first mold film to leave a portion of the first support film as a first support pattern surrounding the electrode and to leave a portion of the second support film as a second support pattern surrounding the electrode. | 05-15-2014 |
20140145303 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same, the device including a substrate having a transistor formed thereon; a plurality of lower electrodes formed on the substrate; a first supporter and a second supporter on the plurality of lower electrodes; a dielectric film formed on the lower electrode, the first supporter, and the second supporter; and an upper electrode formed on the dielectric film, wherein the first and second supporters are positioned between the lower electrodes, and the first and second supporters include a first material and a second material. | 05-29-2014 |