Hokomoto
Yoshitaka Hokomoto, Ibo-Gun JP
Patent application number | Description | Published |
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20090057757 | TRENCH GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a trench gate semiconductor device including: a semiconductor layer having a first conductivity type; a first diffusion region having a second conductivity type having a planar structure on the semiconductor layer; a second diffusion region having the first conductivity type positioned selectively on the first diffusion region; a gate electrode provided via a gate insulation film in each first trench facing the second diffusion region and penetrating through the first diffusion region to reach the semiconductor layer; a first semiconductor region of the second conductivity type provided at a position, in the semiconductor layer, apart in a lateral direction from the first diffusion region; a second semiconductor region of the second conductivity type provided at a position, in the first diffusion region, between the adjacent first trenches; and a main electrode in contact with the semiconductor layer and the second diffusion region. | 03-05-2009 |
20090166732 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to an embodiment of the present invention has a transistor section which includes a trench gate type transistor, and a gate line section which includes a part provided between transistor sections. The device includes a semiconductor substrate, a semiconductor layer formed on the semiconductor substrate, a base layer formed in the semiconductor layer, and provided with trenches in the transistor section and the gate line section, the trenches in the transistor section extending in a first direction parallel to a direction in which the transistor extends, the trenches in the bit line section extending in a second direction perpendicular to the first direction, and the trenches in the transistor section penetrating the base layer to reach the semiconductor layer, a source layer formed in the semiconductor layer in the transistor section, the source layer being located on the base layer, a gate insulator formed on surfaces of the base layer and the semiconductor layer exposed to the trenches in the transistor section and the gate line section, and on an upper surface of the base layer between the trenches in the gate line section, a gate line layer formed on the gate insulator, and including a part buried in the trenches in the transistor section, an inter layer dielectric formed on the gate line layer, and a source line layer formed on the inter layer dielectric, and electrically connected to the source layer in the transistor section. | 07-02-2009 |
Yoshitaka Hokomoto, Hyogo-Ken JP
Patent application number | Description | Published |
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20110227554 | SEMICONDUCTOR DEVICE AND DC-DC CONVERTER - According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, a base region of a second conductivity type, a diffusion region of the first conductivity type, a control electrode, at least one first semiconductor region of the second conductivity type, a second semiconductor region of the second conductivity type, a first main electrode, and a second main electrode. The base region is selectively provided in a first major surface side of the semiconductor layer. The diffusion region is selectively provided in the base region. The control electrode is provided via an insulating film in a trench being in contact with the diffusion region and penetrating through the base region to the semiconductor layer. The at least one first semiconductor region extends in the semiconductor layer from the first major surface side to a second major surface side of the semiconductor layer and is spaced from the base region. The second semiconductor region is provided between the adjacent trenches and spaced from the trenches in the base region. The first main electrode is electrically connected to the diffusion region, the semiconductor layer, the first semiconductor region, and the second semiconductor region. The second main electrode is electrically connected to the second major surface side of the semiconductor layer. The second semiconductor region penetrates through the base region to the semiconductor layer. | 09-22-2011 |
20140284708 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a method for manufacturing a semiconductor device includes forming a gate trench extending into a first semiconductor layer; forming a gate insulating film on an internal wall of the gate trench; forming a polysilicon in the gate trench; etching the polysilicon into the gate trench; forming an interlayer insulating film on the polysilicon; etching the first semiconductor layer so as to project the interlayer insulating film from the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer; forming a third semiconductor layer on the second semiconductor layer; forming a sidewall contacting a side face of the interlayer insulating film; forming a fourth semiconductor layer of the second conductivity type in the second semiconductor layer; and forming a first electrode electrically connected to the third semiconductor layer and the fourth semiconductor layer. | 09-25-2014 |
Yoshitaka Hokomoto, Kanazawa Ishikawa JP
Patent application number | Description | Published |
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20150364562 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer that includes a first region and a second region, a second semiconductor layer that is provided on an upper side of the first semiconductor layer, a third semiconductor layer that is selectively provided on an upper side of the second semiconductor layer, a control electrode provided in the second semiconductor layer and the third semiconductor layer through an insulation film, a first conductor that is provided in the first semiconductor layer so as to be in contact with the control electrode and the first semiconductor layer through the insulation film and is positioned further on a first semiconductor layer side than the control electrode, a second conductor that extends in a direction from the third semiconductor layer to the first semiconductor layer in the second region and is provided in the first semiconductor layer through an insulation film, a first electrode that is electrically connected to the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer, and a second electrode that is electrically connected to the first semiconductor layer. | 12-17-2015 |