Patent application number | Description | Published |
20090081579 | FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME - Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm | 03-26-2009 |
20090081585 | FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME - Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm | 03-26-2009 |
20090081597 | FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME - Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm | 03-26-2009 |
20090081598 | FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME - Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm | 03-26-2009 |
20100062368 | LOW OUTGASSING PHOTORESIST COMPOSITIONS - Polymers for use in photoresist compositions include a repeat unit having a formula of: | 03-11-2010 |
20100239985 | Method for Using Compositions Containing Fluorocarbinols in Lithographic Processes - The present invention involves a method for generating a photoresist image on a substrate. The method comprises coating a substrate with a film comprising a polymer comprising fluorocarbinol monomers; imagewise exposing the film to radiation; heating the film to a temperature of, at, or below about 90° C. and developing the image. The present invention also relates to a method for generating a photoresist image on a substrate where a polymer comprising fluorocarbinol monomers is used as a protective top coat. | 09-23-2010 |
20110008727 | Low Activation Energy Photoresist Composition and Process for Its Use - The present invention relates to a radiation sensitive photoresist composition. The composition comprises a polymer comprising at least two monomers. The first monomer has an acid cleavable tertiary ester group. The second monomer is an acidic monomer. The acid cleavable ester group of the polymer has a surprisingly low activation energy which results in improved resist images in lithographic processes. | 01-13-2011 |
20110045407 | Functionalized Carbosilane Polymers and Photoresist Compositions Containing the Same - Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm | 02-24-2011 |
20110053083 | CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND PROCESS FOR ITS USE - Photoresist compositions include a blend of a phenolic polymer with a (meth)acrylate-based copolymer free of ether-containing and/or carboxylic acid-containing moieties. The (meth)acrylate copolymer includes a first monomer selected from the group consisting of an alkyl acrylate, a substituted alkyl acrylate, an alkyl (meth)acrylate, a substituted alkyl methacrylate and mixtures thereof, and a second monomer selected from the group consisting of an acrylate, a (meth)acrylate or a mixture thereof having an acid cleavable ester substituent; and a photoacid generator. Also disclosed are processes for generating a photoresist image on a substrate with the photoresist composition. | 03-03-2011 |
20110111339 | BILAYER SYSTEMS INCLUDING A POLYDIMETHYLGLUTARIMIDE-BASED BOTTOM LAYER AND COMPOSITIONS THEREOF - Bilayer systems include a bottom layer formed of polydimethylglutarimide, an acid labile dissolution inhibitor and a photoacid generator. The bilayer system can be exposed and developed in a single exposure and development process. | 05-12-2011 |
20110111345 | SILICON CONTAINING COATING COMPOSITIONS AND METHODS OF USE - Coating compositions include a polymer including: | 05-12-2011 |
20110147983 | METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM - A method of forming a layered structure comprising a domain pattern of a self-assembled material comprises: disposing on a substrate a photoresist layer comprising a non-crosslinking photoresist; optionally baking the photoresist layer; pattern-wise exposing the photoresist layer to first radiation; optionally baking the exposed photoresist layer; and developing the exposed photoresist layer with a non-alkaline developer to form a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist; wherein the developed photoresist is not soluble in a given organic solvent suitable for casting a given material capable of self-assembly, and the developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the given material capable of self-assembly dissolved in the given organic solvent is casted on the patterned photoresist layer, and the given organic solvent is removed. The casted given material is allowed to self-assemble while optionally heating and/or annealing the casted given material, thereby forming the layered structure comprising the domain pattern of the self-assembled given material. | 06-23-2011 |
20130260313 | PHOTOACID GENERATING POLYMERS CONTAINING A URETHANE LINKAGE FOR LITHOGRAPHY - A photoacid generating polymer (PAG polymer) comprises i) a first repeat unit of capable of reacting with a photogenerated acid to form a carboxylic acid containing repeat unit, ii) a second repeat unit of capable of forming the photogenerated acid, and iii) a third repeat unit comprising a norbornyl ester, wherein a norbornyl ring of the norbornyl ester comprises a monovalent substituent having the formula *-L′-C(CF | 10-03-2013 |
20140242526 | POSITIVE TONE ORGANIC SOLVENT DEVELOPED CHEMICALLY AMPLIFIED RESIST - Provided is a method for developing positive-tone chemically amplified resists with an organic developer solvent having at least one polyhydric alcohol, such as ethylene glycol and/or glycerol, alone or in combination with an additional organic solvent, such as isopropyl alcohol, and/or water. The organic solvent developed positive tone resists described herein are useful for lithography pattern forming processes; for producing semiconductor devices, such as integrated circuits (IC); and for applications where basic solvents are not suitable, such as the fabrication of chips patterned with arrays of biomolecules or deprotection applications that do not require the presence of acid moieties. | 08-28-2014 |