Patent application number | Description | Published |
20110117746 | COATING COMPOSITION AND PATTERN FORMING METHOD - It is an object to provide a coating composition applicable to “reversal patterning” and suitable for forming a film covering a resist pattern. The object is accomplished by a coating composition for lithography comprising an organopolysiloxane, a solvent containing the prescribed organic solvent as a main component, and a quaternary ammonium salt or a quaternary phosphonium salt; or a coating composition for lithography comprising a polysilane, a solvent containing the prescribed organic solvent as a main component, and at least one additive selected from a group consisting of a crosslinking agent, a quaternary ammonium salt, a quaternary phosphonium salt, and a sulfonic acid compound, wherein the polysilane has, at a terminal thereof, a silanol group or a silanol group together with a hydrogen atom. | 05-19-2011 |
20110230058 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM WITH REDUCED OUTGASSING - There is provided underlayer films of high-energy radiation resists that are applied onto semiconductor substrates in a lithography process for producing semiconductor devices and that are used to prevent reflection, static electrification, and development defects and to suppress outgassing during the exposure of resist layers with high-energy radiation. A composition for forming an underlayer film of a high-energy radiation resist, the composition comprising a film component having an aromatic ring structure or a hetero ring structure. The film component having an aromatic ring structure or a hetero ring structure is contained preferably in a film at a proportion of 5 to 85% by mass. The film component may be a compound having an aromatic ring structure or a hetero ring structure, and the compound may be a polymer or a polymer precursor including a specific repeating unit. The aromatic ring may be a benzene ring or fused benzene ring, and the hetero ring structure may be triazinetrione ring. | 09-22-2011 |
20120040291 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY - There is provided a compositions of resist underlayer films for EUV lithography that is used in a production process of devices employing EUV lithography, that reduces adverse effects caused by EUV, and that has a beneficial effect on the formation of a favorable resist pattern; and a method for forming resist patterns using the composition of resist underlayer films for EUV lithography. A composition for forming a resist underlayer film for an EUV lithography process used in production of a semiconductor device, comprising a novolac resin containing a halogen atom. The novolac resin may include a cross-linkable group composed of an epoxy group, a hydroxy group, or a combination thereof. The halogen atom may be a bromine atom or an iodine atom. The novolac resin may be a reaction product of a novolac resin or an epoxidized novolac resin and a halogenated benzoic acid; or a reaction product of a glycidyloxy novolac resin and diiodosalicylic acid. | 02-16-2012 |
20120251955 | COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM - There is provided a composition for forming a resist underlayer film for electron beam or EUV lithography that is used in a device manufacture process using EUV lithography, reduces the adverse effects caused by an electron beam or EUV, and is effective for the formation of a good resist pattern and a resist pattern formation method using the composition for forming a resist underlayer film for lithography. A composition for forming a resist underlayer film for electron beam or EUV lithography, comprising: a polymer having a repeating unit structure of Formula (1): | 10-04-2012 |
20130209940 | COMPOSITION FOR FORMING RESIST OVERLAYER FILM FOR EUV LITHOGRAPHY - There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group. | 08-15-2013 |
20130230809 | RESIST UNDERLAYER FILM FORMING COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING THE SAME - There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond. | 09-05-2013 |
20140038415 | POLYMER-CONTAINING DEVELOPER - Disclosed is a developer, one that does not cause pattern collapse during the formation process, for the formation of a fine pattern and a method for pattern formation using the developer. A developer used in a lithography process includes a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. Also disclosed is a method for producing a semiconductor device. | 02-06-2014 |
20140099791 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY - A method for producing a semiconductor device includes the steps of: applying a composition for forming a resist underlayer film for EUV lithography including a novolac resin containing a halogen atom onto a substrate having a film to be fabricated for forming a transferring pattern and baking the composition so as to form a resist underlayer film for EUV lithography; and applying a resist for EUV lithography onto the resist underlayer film for EUV lithography, irradiating, with EUV through a mask, the resist underlayer film for EUV lithography and a film of the resist for EUV lithography on the resist underlayer film, developing the film of the resist for EUV lithography, and transferring an image formed in the mask onto the substrate by dry etching so as to form an integrated circuit device. | 04-10-2014 |
20140170567 | RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR EUV LITHOGRAPHY CONTAINING CONDENSATION POLYMER - There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): | 06-19-2014 |
20150079792 | SILICON-CONTAINING EUV RESIST UNDERLAYER FILM-FORMING COMPOSITION INCLUDING ADDITIVE - There is provided a composition for forming an EUV resist underlayer film which shows a good resit form. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (A) containing a hydrolyzed condensate of hydrolyzable silane (a); and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (B) containing a hydrolyzed condensate of hydrolyzable silane (a) and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. The polysiloxane (A) is preferably a co-hydrolyzed condensate of a tetraalkoxysilane, an alkyltrialkoxysilane and an aryltrialkoxysilane. | 03-19-2015 |
Patent application number | Description | Published |
20090211787 | PRINTED CIRCUIT BOARD - A first insulating layer is formed on a suspension body, and a write wiring trace and a read wiring trace are formed on the first insulating layer. A second insulating layer is formed on the first insulating layer so as to cover the wiring traces. A write wiring trace and a read wiring trace are formed on the second insulating layer. A third insulating layer is formed on the second insulating layer so as to cover the wiring traces. The width of the wiring trace is larger than the width of the wiring trace, and the width of the wiring trace is larger than the width of the wiring trace. | 08-27-2009 |
20090242259 | PRINTED CIRCUIT BOARD AND METHOD OF MANUFACTURING THE SAME - Ground traces are formed to sandwich a write wiring trace. Ground walls are formed on the ground traces. A ground cover is formed so as to couple upper ends of the ground walls. Thus, the ground traces, the ground walls and the ground cover are positioned in a region above and on both sides of the write wiring trace to surround the write wiring trace. | 10-01-2009 |
20090250252 | PRINTED CIRCUIT BOARD - A first insulating layer is formed on a suspension body and a wiring trace is formed on the first insulating layer. In addition, a ground trace is formed on the first insulating layer so as to extend along the wiring trace on one side of the wiring trace with a spacing therebetween. A second insulating layer is formed on the first insulating layer to cover the wiring trace and the ground trace. On the second insulating layer, a wiring trace is formed at a position above the wiring trace. A third insulating layer is formed on the second insulating layer to cover the wiring trace. The width of the wiring trace is set larger than the width of the wiring trace. At least a partial region of the ground trace and at least a partial region of the wiring trace are opposite to each other with part of the second insulating layer sandwiched therebetween. | 10-08-2009 |
20090316300 | PRINTED CIRCUIT BOARD AND METHOD OF MANUFACTURING THE SAME - A first insulating layer is formed on a suspension body. Wiring traces are formed in parallel at an interval on the first insulating layer. A second insulating layer is formed in a region on the first insulating layer on both sides of the wiring traces. A wiring trace is formed in a region on the second insulating layer on the side of the wiring trace. A wiring trace is formed in a region on the second insulating layer on the side of the wiring trace. A third insulating layer is formed on the first and second insulating layers to cover the wiring traces. | 12-24-2009 |
20100051334 | Printed Circuit Board and Method of Manufacturing the Same - A first insulating layer is formed on a suspension body. A write wiring trace is formed on the first insulating layer. A second insulating layer is formed on the first insulating layer to cover the write wiring trace. A write wiring trace and read wiring traces are formed on the second insulating layer. The write wiring trace is arranged above the write wiring trace. The write wiring trace includes a conductor layer and reinforcing alloy layers. The reinforcing alloy layers are sequentially formed to cover an upper surface and side surfaces of the conductor layer. | 03-04-2010 |