Patent application number | Description | Published |
20090072262 | (Al,In,Ga,B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE - A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of In | 03-19-2009 |
20090250686 | METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES - A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed. | 10-08-2009 |
20090310640 | MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES - A III-nitride optoelectronic device comprising a light emitting diode (LED) or laser diode with a peak emission wavelength longer than 500 nm. The III-nitride device has a dislocation density, originating from interfaces between an indium containing well layer and barrier layers, less than 9×10 | 12-17-2009 |
20100155778 | METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION - A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al, In, Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In | 06-24-2010 |
20120056158 | LIGHT EMITTING DIODES WITH A P-TYPE SURFACE BONDED TO A TRANSPARENT SUBMOUNT TO INCREASE LIGHT EXTRACTION EFFICIENCY - An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane. | 03-08-2012 |
20120074525 | MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE - A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In | 03-29-2012 |
20120187415 | METHOD FOR CONDUCTIVITY CONTROL OF (Al,In,Ga,B)N - A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 | 07-26-2012 |
20120199809 | METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) GROWTH OF HIGH PERFORMANCE NON-POLAR III-NITRIDE OPTICAL DEVICES - A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes. | 08-09-2012 |
20120205620 | METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES - A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed. | 08-16-2012 |
20120205625 | (Al, In, Ga, B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE - A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of In | 08-16-2012 |
20130015492 | OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH - A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN. | 01-17-2013 |
20130168833 | METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION - A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In | 07-04-2013 |
20140183579 | MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE - A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In | 07-03-2014 |
20140191244 | METHOD FOR CONDUCTIVITY CONTROL OF (Al,In,Ga,B)N - A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 | 07-10-2014 |