Patent application number | Description | Published |
20100047997 | METHOD FOR MANUFACTURING SOI SUBSTRATE - It is an object of the preset invention to increase adhesiveness of a semiconductor layer and a base substrate and to reduce defective bonding. An oxide film is formed on a semiconductor substrate and the semiconductor substrate is irradiated with accelerated ions through the oxide film, whereby an embrittled region is formed at a predetermined depth from a surface of the semiconductor substrate. Plasma treatment is performed on the oxide film on the semiconductor substrate and the base substrate by applying a bias voltage, the surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other, a surface of the oxide film is bonded to the surface of the base substrate, heat treatment is performed after the surface of the oxide film is bonded to the surface of the base substrate, and separation is caused along the embrittled region, whereby a semiconductor layer is formed over the base substrate with the oxide film interposed therebetween. | 02-25-2010 |
20110207269 | TRANSISTOR AND MANUFACTURING METHOD OF THE SAME - A transistor is manufactured by a method including: forming a first wiring layer; forming a first insulating film to cover the first wiring layer; forming a semiconductor layer over the first insulating film; forming a conductive film over the semiconductor layer; and performing at least two steps of etching on the conductive film to form second wiring layers which are apart from each other, wherein the two steps of etching include at least a first etching process performed under the condition that the etching rate for the conductive film is higher than the etching rate for the semiconductor layer, and a second etching process performed under the condition that the etching rates for the conductive film and the semiconductor layer are higher than those of the first etching process. | 08-25-2011 |
20120003797 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - When a transistor including a conductive layer having a three-layer structure is manufactured, three-stage etching is performed. In the first etching process, an etching method in which the etching rates for the second film and the third film are high is employed, and the first etching process is performed until the first film is at least exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. In the third etching process, an etching method in which the etching rates for the first to the third films are higher than those in the second etching process is preferably employed. | 01-05-2012 |
20120012836 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a three-layer structure and two-step etching is performed. In the first etching process, an etching method in which the etching rates for at least the second film and the third film are high is employed, and the first etching process is performed until at least the first film is exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. The side wall of the second film is slightly etched when a resist mask is removed after the second etching process. | 01-19-2012 |
20120288993 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To establish a processing technique in manufacture of a semiconductor device including an In—Sn—Zn—O-based semiconductor. An In—Sn—Zn—O-based semiconductor layer is selectively etched by dry etching with the use of a gas containing chlorine such as Cl | 11-15-2012 |
20140327007 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a three-layer structure and two-step etching is performed. In the first etching process, an etching method in which the etching rates for at least the second film and the third film are high is employed, and the first etching process is performed until at least the first film is exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. The side wall of the second film is slightly etched when a resist mask is removed after the second etching process. | 11-06-2014 |
Patent application number | Description | Published |
20120236155 | TERAHERTZ WAVE GENERATION DEVICE, LIGHT SOURCE DEVICE, CAMERA, IMAGING DEVICE, AND MEASUREMENT DEVICE - A terahertz wave generation device includes a light source device emitting an optical pulse, and an antenna generating a terahertz wave through irradiation of the optical pulse that is emitted from the light source device onto the antenna, wherein the light source device includes an optical pulse generation unit generating the optical pulse, a first pulse compression unit performing pulse compression based on saturable absorbers with respect to the optical pulse generated by the optical pulse generation unit, a second pulse compression unit performing pulse compression based on group velocity dispersion compensation with respect to the optical pulse already compressed by the first pulse compression unit, and an amplifying unit installed between the first pulse compression unit and the second pulse compression unit to amplify the optical pulse emitted from the first pulse compression unit. | 09-20-2012 |
20130120584 | SHORT LIGHT PULSE GENERATING DEVICE, TERAHERTZ WAVE GENERATING DEVICE, CAMERA, IMAGING DEVICE, AND MEASURING DEVICE - A short light pulse generating device includes a light pulse generating part, a first pulse compressing part, a second pulse compressing part, and an amplifying part. The light pulse generating part is configured to generate light pulses, the light pulse generating part being a super luminescent diode. The first pulse compressing part is configured to perform pulse compression based on saturable absorption on the light pulses generated by the light pulse generating part. The second pulse compressing part is configured to perform pulse compression based on group velocity dispersion compensation on the light pulses that underwent the pulse compression by the first pulse compressing part. The amplifying part is provided between the first pulse compressing part and the second pulse compressing part, and configured to amplify the light pulses that underwent the pulse compression by the first pulse compressing part. | 05-16-2013 |
Patent application number | Description | Published |
20140061470 | SHORT OPTICAL PULSE GENERATOR, TERAHERTZ WAVE GENERATION DEVICE, CAMERA, IMAGING APPARATUS, AND MEASUREMENT APPARATUS - A short optical pulse generator which includes an optical pulse generation portion that has a quantum well structure and generates an optical pulse, a frequency chirp portion that has a quantum well structure and chirps a frequency of the optical pulse, and a group velocity dispersion portion that includes a plurality of optical waveguides disposed in a mode coupling distance and which causes a group velocity difference corresponding to a wavelength in the optical pulse of which the frequency is chirped. | 03-06-2014 |
20140240509 | SHORT LIGHT PULSE GENERATION DEVICE, TERAHERTZ WAVE GENERATION DEVICE, CAMERA, IMAGING DEVICE, AND MEASUREMENT DEVICE - A short light pulse generation device includes: a light pulse generation portion that has a quantum well structure and generates a light pulse; a frequency chirping portion that has a quantum well structure and chirps a frequency of the light pulse; a light branching portion that branches a chirped light pulse; and a group velocity dispersion portion that has a plurality of optical waveguides, on which each of a plurality of the light pulses branched in the light branching portion is incident, and produces a group velocity difference depending on a wavelength with respect to a plurality of branched light pulses, wherein light path lengths of the light pulses in a plurality of light paths before the light pulse is branched in the light branching portion and then incident on the plurality of optical waveguides of the group velocity dispersion portion are equal to each other. | 08-28-2014 |
20140264024 | SPECIMEN INSPECTION APPARATUS - A specimen inspection apparatus includes: a transportation unit which includes a transportation surface on which a specimen as an inspection object is loaded and is configured so as to transport the specimen; a terahertz wave generation unit which is positioned on the transportation surface side of the transportation unit and generates a terahertz wave; and a terahertz wave detection unit which is positioned on a side of a surface opposite the transportation surface of the transportation unit, and detects a terahertz wave which is emitted from the terahertz wave generation unit and transmits through the specimen loaded on the transportation surface, wherein the transportation unit includes a hole portion through which the transportation surface and the surface opposite the transportation surface communicate with each other, and is configured so that the specimen can be loaded on the hole portion. | 09-18-2014 |