Patent application number | Description | Published |
20080214386 | Catalyst for Cyclic Carbonate Synthesis - Provided are a solid catalyst which gives a cyclic carbonate at a high yield and a high selectivity, which is stable and which may be readily separated after reaction; and a method of industrially advantageous, inexpensive and safe production of a cyclic carbonate by the use of the catalyst. The catalyst contains an inorganic solid substance having a surface modified with an ionic substance containing a Group 15 element; or contains an ionic substance containing a Group 15 element, and an inorganic solid substance. The modifying group for surface modification of an inorganic solid substance is an ionic substance containing a Group 15 element. The ionic substance containing a Group 15 element is at least one substance selected from organic phosphonium salts, organic ammonium salts, organic arsonium salts and organic antimonium salts. | 09-04-2008 |
20090012324 | Process for Production of Carboxylic Acid Ester or Ether Compound - Disclosed is a process for production of a carboxylic acid ester from a carboxylic acid and an olefin or production of an ether compound from an alcohol and an olefin at low cost and with high yield in an industrially advantageous manner. The process comprises the step of reacting a carboxylic acid with an olefin to yield a corresponding carboxylic acid ester or reacting an alcohol with an olefin to yield a corresponding ether compound. In the process, a catalyst comprising a combination of (i) at least one metal compound selected from an iron compound, a cobalt compound and a nickel compound and (ii) an acidic compound is used. | 01-08-2009 |
20110004010 | ORGANIC INORGANIC COMPOSITE MATERIAL AND UTILIZATION THEREOF - The invention has an object to obtain an organic inorganic composite material having high activity and high selectivity, and suitable as a catalyst material having small elution of an active metal from a carrier, and further to obtain an organosilicon compound suitable for the preparation of the composite material. The composite material is an organic inorganic composite material comprising an organosilicon compound having at least two groups containing reactive silicon at a molecular end, bonded to one silicon atom constituting the organosilicon compound, and an inorganic oxide material, the organosilicon compound and the inorganic oxide material being bonded to each other through a plurality of groups containing reactive silicon of the organosilicon compound. The organosilicon compound is represented by the following general formula (1) or (2). Formula (1) wherein symbols are the same as defined in claim | 01-06-2011 |
Patent application number | Description | Published |
20080316132 | Method of aligning antenna azimuth - There is disclosed a method of aligning an azimuth of an antenna by use of an antenna azimuth aligning instrument capable of economically and precisely aligning the azimuth in a case where a direction of a main beam of a directional antenna is matched with a counter antenna. There is provided a method of aligning the azimuth of the directional antenna by use of the antenna azimuth aligning instrument to be attached to the antenna for use in radio communication, the azimuth aligning instrument includes an aiming hole whose central axis is constituted in parallel with a main beam azimuth of the antenna and in which a diameter of an opening | 12-25-2008 |
20090230568 | Adhesive Film for Semiconductor and Semiconductor Device Therewith - There is provided an adhesive film for a semiconductor, comprising a thermoplastic resin (A), an epoxy resin (B) and a curing agent (C), wherein a minimum melt viscosity of said adhesive film for a semiconductor is 0.1 Pa·s to 500 Pa·s both inclusive in a temperature range of 50° C. to 180° C. both inclusive at a temperature-rise rate of 10° C./min from room temperature and a content of volatile component is 5.0% or less. | 09-17-2009 |
20100320620 | ADHESIVE FILM FOR SEMICONDUCTOR AND SEMICONDUCTOR DEVICE USING THE ADHESIVE FILM - An adhesive film for a semiconductor containing an (A) ester (meth)acrylate copolymer and a (B) thermoplastic resin other than the ester (meth)acrylate copolymer, and composed so as to satisfy the following formula (1) for two hours from 10 minutes after starting measurement, in which γ represents an amount of shearing strain produced upon undergoing a shearing stress of 3000 Pa at a frequency of 1 Hz and a temperature of 175° C. on parallel plates of 20 mm in diameter, exhibits superior filling performance in surface unevenness of a substrate through an encapsulating material sealing process, despite that semiconductor chips are stacked in multiple layers in the semiconductor device and hence a wire bonding process imposes a longer thermal history. | 12-23-2010 |
20140131570 | LIQUID CHROMATOGRAPHY MASS SPECTROMETER DEVICE - The purpose of the present invention is to provide a mass spectrometer with high detection sensitivity to generate fine charged droplets and thereby improve the efficiency of sample ionization, and to reduce large droplets with high ionic strength. The present invention includes: liquid chromatograph separating means that separates a sample solution into components; a sample sprayer that sprays as droplets the sample solution separated and eluted by the liquid chromatograph separating means; ion generating means that charges the droplets and generates ions; a mass spectrometer that receives the ions and performs mass spectrometry on the ions; and a desolvation unit that removes a solvent contained in the charged droplets, wherein the desolvation unit includes a desolvation flow path chamber through which the charged droplets pass, heating means for heating the desolvation flow path chamber, and a helical droplet flow path formed in the desolvation flow path chamber. | 05-15-2014 |
20150198569 | MASS ANALYSIS METHOD AND MASS ANALYSIS SYSTEM - Provided is a mass analysis method that prevents quantitative precision from decreasing. This mass analysis method uses an analysis system including a mass analysis device and a subdetector connected to each other, the subdetector displaying intensity and detection time relating to constituents of a sample at a preceding stage of the mass analysis device, the method comprising: (a) after injection of a sample, analyzing the sample with an analyzing apparatus including the subdetector, and after the sample has passed through the subdetector, injecting the sample into the mass analysis device; (b) acquiring data from both the subdetector and the mass analysis device; and (c) determining which of peaks that the subdetector and the mass analysis device have detected is to be analyzed, based on whether overlapping peaks are present and whether the same peak between data from the subdetector and the mass analysis device is present. | 07-16-2015 |
20150371837 | METHOD AND DEVICE FOR MASS SPECTROMETRY - A mass spectrometry is equipped with a liquid specimen supply part which supplies a liquid specimen sandwiched between bubbles, an ion source part ionizes the specimen, and a mass spectrometry part which detects ions separated in accordance with mass. In particular the ion source part is configured so as to include a liquid supply tube for transporting a specimen from the liquid specimen supply part, a degassing/liquid retention part in which bubbles are removed, a spraying part which ionizes the specimen, and a high-voltage power supply part which applies a high voltage to the spraying part. The device is further characterized in that after removing the bubbles, a Taylor cone is formed from the resultant pre-solution, and the specimen is ionized thereafter. Thus, the ionization of an intended specimen is stabilized, and the measurement reproducibility is improved. | 12-24-2015 |
Patent application number | Description | Published |
20090179148 | MASS SPECTROMETER AND MASS SPECTROMETRY METHOD - Performing an MS3 with a tandem mass spectrometer causes problems of increase in size of the device and of increase in cost. Likewise, a plural number of times MS/MS analyses are even more difficult. An electrode to create a harmonic potential is disposed in a collision cell, and fragment ions produced by the first-time collision induced dissociation are accumulated in the harmonic potential. Target ions of the subsequent stage are let out, by means of an axial resonance excitation, selectively from the accumulated ions. The ions are excited in the axial direction to have a potential exceeding the harmonic potential. Thereby, the second-time collision induced dissociation is performed by means of a potential difference provided at the subsequent stage. In addition, an operation to return the ions back to the harmonic potential enables a plural number of times MS/MS analyses to be performed. | 07-16-2009 |
20110248157 | MASS SPECTROMETER AND MASS SPECTROMETRY METHOD - Objects of the present invention is to provide a quadrupole mass filter that can be fabricated at low cost and has a high transmission efficiency even under a high pressure (0.5 mTorr or more), and to provide a mass spectrometer or mass spectrometry method that reduces crosstalk in a wide mass range. Now, in a mass spectrometer, an ion separating unit is configured to include quadrupole rod electrodes that form a quadrupole radio-frequency electric field, electrodes that form a quadrupole electrostatic field, and a power supply that allows the voltage of the electrodes to form a quadrupole electrostatic field to change. In a collision cell configured to perform collision induced dissociation, harmonic potentials in a plurality of stages are produced to resonance excite ions in the axial direction, so that the ions obtain kinetic energy to move in the direction of the detector. This energy allows a time period to shorten for which ions stay in the collision cell. | 10-13-2011 |
20130228682 | MASS SPECTROMETER AND MASS SPECTROMETRY METHOD - A mass spectrometer is provided including: a collision chamber of generating fragment ions by superimposingly applying an AC voltage and a first DC voltage between linear multipolar electrodes, and accelerating the fragment ions by applying a second DC voltage between a front stage electrode and a later stage electrode; a mass spectrometer unit of carrying out mass separation of the fragment ions; and a control unit of determining the second DC voltage based on the mass-to-charge ratios such that the rates of the fragment ions in the collision chamber become equal regardless of the mass-to-charge ratios. Herein, the control unit increases the second DC voltage as the mass-to-charge ratios selected by the mass spectrometer unit become larger. This allows the mass window to be wider even when a DC electric field is generated in order to solve a crosstalk drawback, in the movement direction of the molecular ions. | 09-05-2013 |
Patent application number | Description | Published |
20090122859 | PICTURE TRANSMISSION METHOD, PICTURE TRANSMISSION METHOD PROGRAM, STORAGE MEDIUM WHICH STORES PICTURE TRANSMISSION METHOD PROGRAM, AND PICTURE TRANSMISSION APPARATUS - A picture transmission method is disclosed which involves encoding moving picture data and transmitting the encoded data. The picture transmission method includes the steps of encoding firstly the moving picture data into a moving picture stream for transmission at a predetermined data transfer rate, and encoding secondly, based on position information acquired from a transmission destination, a part of the moving picture data which constitutes a partial picture region for transmission at a higher resolution than the first encoding step. | 05-14-2009 |
20120099842 | EDITING APPARATUS, EDITING METHOD, PROGRAM, AND RECORDING MEDIA - An editing apparatus is disclosed. A story determination block determines a story expressed by a time function and provides a reference for selecting an image from among candidate images. An evaluation value computation block computes an evaluation value for each of the candidate images for each selection time in the story based on the story determined by the story determination block and at least one feature value indicative of a feature of each of candidate images set to each thereof. An image selection block selects an image for each selection time from among the candidate images based on the computed evaluation value. An editing processing block links selection images that are images selected by the image selection block for each selection time to each other in a time-dependent manner. | 04-26-2012 |
20140016914 | EDITING APPARATUS, EDITING METHOD, PROGRAM AND STORAGE MEDIUM - There is provided an editing apparatus including a story determination unit determining a story indicated by a time function as a reference to select an image from multiple candidate images, an evaluation value calculation unit calculating an evaluation value of each of the candidate images per selection time in the story, based on the story determined in the story determination unit and one or more feature values which are set for each of the multiple candidate images and indicate features of the candidate images, an image selection unit selecting an image per selection time from the candidate images, based on the evaluation value calculated in the evaluation value calculation unit, a candidate image correction unit correcting the selected candidate image based on the evaluation value, and an edit processing unit linking the image selected per selection time and the candidate image corrected based on the evaluation value, in chronological order. | 01-16-2014 |
20140099039 | IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD, AND IMAGE PROCESSING SYSTEM - There is provided an image processing device including a converter configured to obtain, prior to performing an encoding process, image drawing information of an image capable of using upon encoding and to convert the obtained image drawing information into a parameter for encoding, and an encoding processor configured to perform the encoding process by changing contents of the encoding process according to the parameter for encoding converted by the converter. | 04-10-2014 |
Patent application number | Description | Published |
20120100697 | FILM FOR SEMICONDUCTOR AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer is diced and the bonding layer is selectively peeled off from the first adhesive layer when the diced semiconductor wafer (semiconductor element) is picked up. This film for semiconductor is characterized in that when the semiconductor wafer is laminated thereon and diced, and then adhesive strength of the obtained semiconductor element is measured, a ratio of “a (N/cm)” which is adhesive strength of an edge portion of the semiconductor element to “b (N/cm)” which is adhesive strength of a portion of the semiconductor element other than the edge portion thereof (that is, a/b) is in the range of 1 to 4. By optimizing the a/b, it is possible to reliably suppress defects such as breakage and crack which would be generated in the semiconductor element due to local impartation of a large load thereto when being picked up. | 04-26-2012 |
20120108012 | FILM FOR SEMICONDUCTOR AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer is diced and the bonding layer is selectively peeled off from the first adhesive layer when the semiconductor elements obtained by the dicing are picked up. This film for semiconductor is characterized in that an average thickness of the second adhesive layer is in the range of 20 to 100 μm. This makes it possible to control cutting lines formed during the dicing so as to locate distal ends thereof within the first adhesive layer easily and reliably and to prevent defects which would be generated when the cutting lines come down to the support film. | 05-03-2012 |
20120115280 | FILM FOR SEMICONDUCTOR AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer is diced and the bonding layer is selectively peeled off from the first adhesive layer when a chip is picked up. This film for semiconductor is characterized in that in the case where peel strength at 23° C. of the chip is defined as “F | 05-10-2012 |
Patent application number | Description | Published |
20120184100 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A chemically amplified positive resist composition comprising (A) a substantially alkali insoluble polymer having an acidic functional group protected with an acid labile group, (B) an acid generator, and (C) a perfluoroalkyl ethylene oxide adduct or a nonionic fluorinated organosiloxane compound is coated, exposed to UV radiation having a wavelength of at least 150 nm, and developed. The composition has advantages of uniformity and minimized edge crown upon coating, and no scum formation after development. | 07-19-2012 |
20120184101 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - In a chemically amplified positive resist composition comprising a base resin and an acid generator in a solvent, the base resin contains both an alkali-insoluble or substantially alkali-insoluble polymer having an acid labile group-protected acidic functional group having a Mw of 1,000-500,000 and an alkyl vinyl ether polymer having a Mw of 10,000-500,000. The composition forms on a substrate a resist film of 5-100 μm thick which can be briefly developed to form a pattern at a high sensitivity and a high degree of removal or dissolution to bottom. | 07-19-2012 |
20130026044 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A chemically amplified positive resist composition is provided comprising an alkali-insoluble or substantially alkali-insoluble polymer having an acid labile group-protected acidic functional group, an alkyl vinyl ether polymer, a photoacid generator, and a benzotriazole compound in a solvent. The composition forms on a substrate a resist film of 5-100 μm thick which can be briefly developed to form a pattern at a high sensitivity and a high degree of removal or dissolution to bottom. | 01-31-2013 |
20130129988 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS - A chemically amplified positive resist composition comprising (A) 100 pbw of a base resin which is normally alkali insoluble or substantially insoluble, (B) 0.05-20 pbw of a photoacid generator, (C) 0.1-50 pbw of a thermal crosslinker, and (D) 50-5,000 pbw of an organic solvent is coated to form a thick film having a high sensitivity and resolution. | 05-23-2013 |
20130280886 | WAFER PROCESSING LAMINATE, WAFER PROCESSING MEMBER, TEMPORARY BONDING ARRANGEMENT, AND THIN WAFER MANUFACTURING METHOD - A wafer processing laminate is provided comprising a support ( | 10-24-2013 |
20140255833 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS - A chemically amplified positive resist composition comprising (A) 100 pbw of a base resin which is normally alkali insoluble or substantially insoluble, (B) 0.05-20 pbw of a photoacid generator, (C) 0.1-50 pbw of a thermal crosslinker, and (D) 50-5,000 pbw of an organic solvent is coated to form a thick film having a high sensitivity and resolution. | 09-11-2014 |
20150024574 | TEMPORARY BONDING ADHESIVE COMPOSITIONS AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - A temporary bonding adhesive composition includes a first compound including a thermosetting polyorganosiloxane and a second compound including a thermoplastic polyorganosiloxane. | 01-22-2015 |
Patent application number | Description | Published |
20130220687 | WAFER PROCESS BODY, WAFER PROCESSING MEMBER, WAFER PROCESSING TEMPORARY ADHESIVE MATERIAL, AND METHOD FOR MANUFACTURING THIN WAFER - Disclosed is a wafer process body, a temporary adhesive layer is formed on a supporting body, and a wafer having a circuit-formed front surface and a to-be-processed back surface is stacked on the temporary adhesive layer, wherein the temporary adhesive layer is provided with a first temporary adhesive layer including a non-aromatic saturated hydrocarbon group-containing organopolysiloxane layer (A) which is adhered to the front surface of the wafer so as to be detachable and a second temporary adhesive layer comprised of a thermosetting-modified siloxane polymer layer (B) which is stacked on the first temporary adhesive layer and adhered to the supporting body so as to be detachable. Thus, temporary adhesion of a wafer with a supporting body may become easy, process conformity with the TSV formation process and with the wafer-back surface-wiring process may become high, and removal may be done easily, with high productivity. | 08-29-2013 |
20130302983 | TEMPORARY ADHESIVE FOR WAFER PROCESSING, MEMBER FOR WAFER PROCESSING USING THE SAME, WAFER PROCESSED BODY, AND METHOD FOR PRODUCING THIN WAFER - The present invention provided is the temporary adhesive for wafer processing which temporarily bonds a wafer having a circuit face on the front surface and a processing face on the back surface to a support, and includes a first temporary adhesive layer which is a layer (A) of a thermoplastic resin modified organopolysiloxane obtained by partial dehydration condensation of an organopolysiloxane resin containing a R | 11-14-2013 |
20140106137 | WAFER PROCESSING LAMINATE, WAFER PROCESSING MEMBER, TEMPORARY ADHERING MATERIAL FOR PROCESSING WAFER, AND MANUFACTURING METHOD OF THIN WAFER - A wafer processing laminate, a wafer processing member, a temporary adhering material for processing wafer, and a method for manufacturing a thin wafer using the same. The wafer processing laminate includes a support, a temporary adhesive material layer formed thereon and a wafer laminated on the temporary adhesive material layer, where the wafer has a circuit-forming front surface and a back surface to be processed. The temporary adhesive material layer includes a first temporary adhesive layer of a thermoplastic organopolysiloxane polymer layer (A) releasably adhered on a surface of the wafer, a second temporary adhesive layer of a radiation curable polymer layer (B) laminated on the first temporary adhesive layer, and a third temporary adhesive layer of a thermoplastic organopolysiloxane polymer layer (A′) laminated on the second temporary adhesive layer and releasably adhered to the support. | 04-17-2014 |
20140154868 | WAFER PROCESSING LAMINATE, WAFER PROCESSING MEMBER, TEMPORARY ADHERING MATERIAL FOR PROCESSING WAFER, AND MANUFACTURING METHOD OF THIN WAFER - A wafer processing laminate, a wafer processing member, a temporary adhering material for processing a wafer, and a method for manufacturing a thin wafer, which facilitates to establish a temporary adhering the wafer and the support, enables to form a layer of uniform thickness on a heavily stepped substrate, and is compatible with the TSV formation and wafer back surface interconnect forming steps, and the wafer processing laminate includes a support, a temporary adhesive material layer formed thereon and a wafer laminated on the temporary adhesive material layer, where the wafer has a circuit-forming front surface and a back surface to be processed, wherein the temporary adhesive material layer includes a three-layered structure composite temporary adhesive material layer. | 06-05-2014 |
20140342530 | TEMPORARY ADHESIVE MATERIAL FOR WAFER, FILM FOR TEMPORARY ADHESION USING SAME, WAFER PROCESSING LAMINATE, AND METHOD FOR PRODUCING THIN WAFER USING SAME - A temporary adhesive material for a wafer includes a first temporary adhesive layer of a silicone-containing polymer layer containing a photo base generator and a second temporary adhesive layer of a silicone-containing polymer layer which is laminated on the first temporary adhesive layer, does not contain the photo base generator, and is different from the polymer layer. Thereby, there can be formed a temporary adhesive layer having high thickness uniformity, even on a wafer having a step. Because of the thickness uniformity, a thin wafer having a uniform thickness of 50 μm or less can be easily obtained. When a thin wafer is produced and then delaminated from a support, the wafer can be delaminated from the support by exposure at a low exposure dose without stress. Therefore, a brittle thin wafer can be easily handled without causing damage, and a thin wafer can be easily produced. | 11-20-2014 |
20150353793 | TEMPORARY ADHESIVE MATERIAL FOR WAFER PROCESSING, WAFER PROCESSING LAMINATE, AND METHOD FOR MANUFACTURING THIN WAFER USING SAME - The invention is adhesive material for a wafer processing used for temporarily bonding a supporting substrate to wafer having a front surface includes circuit formed thereon and a back surface to be processed, including first temporary adhesive layer composed of a layer of a silicone-modified styrene base thermoplastic elastomer, and second temporary adhesive layer composed of a thermosetting polymer layer on first temporary adhesive layer, wherein layer is capable of releasably adhering to front surface of wafer, and layer is capable of releasably adhering to the supporting substrate. Thereby, it provides a temporary adhesive material for wafer processing, wafer processing lamination, and method for manufacturing thin wafer using same, which facilitates temporary adhesion between supporting substrate and wafer having a circuit, is highly compatible with steps of forming TSV and forming wiring on back surface of wafer, allows easy delamination, and is capable of increasing productivity of thin wafers. | 12-10-2015 |