Patent application number | Description | Published |
20090237180 | BAND-PASS FILTER DEVICE, METHOD OF MANUFACTURING SAME, TELEVISION TUNER, AND TELEVISION RECEIVER - A band-pass filter device includes: a plurality of band-pass filter elements on a principal plane of a substrate; wherein the band-pass filter elements correspond to a plurality of respective channels divided by frequency regions, and each have a plurality of piezoelectric resonators. Each of the piezoelectric resonators includes a piezoelectric film whose periphery is supported by the substrate, a first electrode formed on a lower surface of the piezoelectric film, a second electrode formed on an upper surface of the piezoelectric film and formed in a state of overlapping at least a part of the first electrode with the piezoelectric film interposed between the second electrode and the first electrode, a lower space formed between the substrate and the piezoelectric film, and an upper space formed over the piezoelectric film. | 09-24-2009 |
20090294789 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - A light emitting device includes a light emitting element emitting light, a first substrate on which the light emitting element is mounted, a second substrate forming a sealing space for the light emitting element between the first substrate and the second substrate and a light exiting window for allowing light emitted from the light emitting element to exit, in which at least one of the first substrate and the second substrate has cleavage characteristics and a cleavage plane thereof serves as a window attaching surface to which the light exiting window is attached. | 12-03-2009 |
20100189205 | RECEIVER CIRCUIT, RECEPTION METHOD, AND COMMUNICATION SYSTEM - A receiver circuit includes an LPF configured to remove an interference signal and/or a noise from a received signal, an ADC configured to digitize a signal output from the LPF, an FIR filter configured to further remove an interference signal and/or a noise from the signal output from the ADC and compensate imperfection in in-band characteristics caused in the LPF, a delay circuit configured to delay the signal output from the ADC by a predetermined time period, and a control circuit configured to control a destination of the signal output from the ADC, wherein the control circuit switches the destination of the signal output from the ADC to one of the FIR filter and the delay circuit according to a predetermined condition. | 07-29-2010 |
20110210399 | Semiconductor device and manufacturing method thereof - A semiconductor device includes a substrate (e.g., a P-type semiconductor substrate), and an isolation region formed in the substrate to isolate an element formation region from the other region. The semiconductor device also includes a gate electrode formed over the element formation region. The gate electrode extends over each of first and second regions of the isolation region opposing each other with the element formation region interposed therebetween. The semiconductor device further includes a pair of diffusion regions (e.g., N-type diffusion regions) formed in the element formation region so as to be spaced apart from each other in a channel length direction with reference to the gate electrode. At least a portion of each of upper surfaces of the first and second regions is depressed to a depth of not less than 5% of a channel width to be located under an upper surface of the element formation region. In each of resultant depressions also, a portion of the gate electrode is present. | 09-01-2011 |
20120307620 | LIGHT SOURCE DEVICE, OPTICAL PICKUP, AND RECORDING DEVICE - A light source device configured as a master oscillator power amplifier includes a mode locked laser unit having an external resonator and a semiconductor optical amplifier that amplifies and modulates laser light emitted from the mode locked laser unit. The width in a lateral direction of a waveguide on an incident side of the semiconductor optical amplifier is set so that a horizontal lateral mode of the waveguide on the incident side of the semiconductor optical amplifier becomes multiple modes, and a magnification conversion unit that converts a magnification of incident light from the mode locked laser unit to the semiconductor optical amplifier is disposed so that a basic mode is selectively excited in optical coupling on the incident side of the semiconductor optical amplifier. | 12-06-2012 |
20140285876 | OPTICAL AMPLIFIER AND OPTICAL AMPLIFYING METHOD - There is provided an optical amplifier including a diffusing unit configured to be driven by a first current density and to increase a beam diameter of an incident laser beam that passes through a first waveguide that guides the laser beam, and an amplifying unit configured to be driven by a second current density that is higher than the first current density and to amplify intensity of the laser beam that passes through a second waveguide that guides the laser beam whose beam diameter has been increased by the diffusing unit. The first waveguide of the diffusing unit has a tapered shape in which a cross-sectional area of the first waveguide is gradually increased toward a travelling direction of the laser beam. | 09-25-2014 |
20140345680 | MULTI-JUNCTION SOLAR CELL, PHOTOELECTRIC CONVERSION DEVICE, AND COMPOUND-SEMICONDUCTOR-LAYER LAMINATION STRUCTURE - A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers. At least one predetermined sub-cell is configured of first layers and a second layer. In each of the first layers, a 1-A layer and a 1-B layer are laminated. In the second layer, a 2-A layer and a 2-B layer are laminated. A composition A of the 1-A layer and the 2-A layer is determined based on a value of a band gap of the predetermined sub-cell. A composition B of the 1-B layer and the 2-B layer is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of 1-B layer and 2-B layer are determined based on difference between base lattice constant and a lattice constant of composition B, and on thickness of the 1-A layer and thickness of 2-A layer. | 11-27-2014 |
20140345681 | MULTI-JUNCTION SOLAR CELL, COMPOUND SEMICONDUCTOR DEVICE, PHOTOELECTRIC CONVERSION DEVICE, AND COMPOUND-SEMICONDUCTOR-LAYER LAMINATION STRUCTURE - There is provided a multi-junction solar cell that reduces contact resistance of a junction portion and is capable of performing energy conversion with high efficiency. The multi-junction solar cell includes a plurality of sub-cells | 11-27-2014 |