Patent application number | Description | Published |
20100159711 | PRECURSOR ADDITION TO SILICON OXIDE CVD FOR IMPROVED LOW TEMPERATURE GAPFILL - Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material. | 06-24-2010 |
20110250731 | PREFERENTIAL DIELECTRIC GAPFILL - Aspects of the disclosure pertain to methods of preferentially filling narrow trenches with silicon oxide while not completely filling wider trenches and/or open areas. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively dense first portion of a silicon oxide layer followed by a more porous (and more rapidly etched) second portion of the silicon oxide layer. Narrow trenches are filled with dense material whereas open areas are covered with a layer of dense material and more porous material. Dielectric material in wider trenches may be removed at this point with a wet etch while the dense material in narrow trenches is retained. | 10-13-2011 |
20120094468 | TWO SILICON-CONTAINING PRECURSORS FOR GAPFILL ENHANCING DIELECTRIC LINER - Aspects of the disclosure pertain to methods of depositing silicon oxide layers on substrates. In embodiments, silicon oxide layers are deposited by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor and a second silicon-containing precursor, having both a Si—C bond and a Si—N bond, into a semiconductor processing chamber to form a conformal liner layer. Upon completion of the liner layer, a gap fill layer is formed by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor into the semiconductor processing chamber. The presence of the conformal liner layer improves the ability of the gap fill layer to grow more smoothly, fill trenches and produce a reduced quantity and/or size of voids within the silicon oxide filler material. | 04-19-2012 |
20130309870 | METHODS OF REDUCING SUBSTRATE DISLOCATION DURING GAPFILL PROCESSING - Methods of reducing dislocation in a semiconductor substrate between asymmetrical trenches are described. The methods may include etching a plurality of trenches on a semiconductor substrate and may include two adjacent trenches of unequal width separated by an unetched portion of the substrate. The methods may include forming a layer of dielectric material on the substrate. The dielectric material may form a layer in the trenches located adjacent to each other of substantially equivalent height on both sides of the unetched portion of the substrate separating the two trenches. The methods may include densifying the layer of dielectric material so that the densified dielectric within the two trenches of unequal width exerts a substantially similar stress on the unetched portion of the substrate that separates them. | 11-21-2013 |
20140262038 | PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING - Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools. | 09-18-2014 |
20140271097 | PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING - Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools. | 09-18-2014 |
20140273406 | PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING - Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools. | 09-18-2014 |
20140273481 | PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING - Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools. | 09-18-2014 |
20140273488 | PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING - Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools. | 09-18-2014 |
20140273489 | PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING - Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools. | 09-18-2014 |