Patent application number | Description | Published |
20100317196 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device, includes: forming a first resist on a workpiece; patterning the first resist by performing selective exposure, baking, and development on the first resist; forming a second resist on the workpiece after the patterning the first resist; patterning the second resist by performing selective exposure, baking, and development on the second resist to selectively remove a part of the second resist and remove the first resist left on the workpiece; and processing the workpiece by using the patterned second resist as a mask. | 12-16-2010 |
20130183828 | PATTERN FORMATION METHOD AND GUIDE PATTERN MATERIAL - According to one embodiment, a pattern formation method includes forming a pattern on a layer. The layer has a first surface energy and includes a silicon compound. The pattern has a second surface energy different from the first surface energy. The method includes forming a block polymer on the layer and the pattern. The method includes forming a structure selected from a lamellar structure and a cylindrical structure of the block polymer containing polymers arranged by microphase separation. The lamellar structure is oriented perpendicularly to the layer surface. The cylindrical structure is oriented so as to have an axis parallel to a normal line of the layer surface. The second surface energy is not less than a maximum value of surface energies of the polymers or not more than a minimum value of the surface energies of the polymers. | 07-18-2013 |
20140127910 | PATTERN FORMATION METHOD AND BLOCK COPOLYMER - According to one embodiment, a pattern formation method includes: forming a block copolymer layer containing a polystyrene derivative and an acrylic having 6 or more carbon atoms on a side chain in an opening of a resist layer provided on an underlayer and having the opening; forming a first layer containing the polystyrene derivative and a second layer containing the acrylic in the opening by phase-separating the block copolymer layer; and removing the second layer. | 05-08-2014 |
Patent application number | Description | Published |
20080305443 | PATTERN FORMING METHOD USING RELACS PROCESS - A resist pattern is formed on a to-be-processed film. Ions are implanted in the upper surface of the resist pattern. After ion implantation, an organic film is formed to cover the resist pattern and heated. A crosslinked resin film made of the organic film which has crosslinked is formed on the sidewall of the resist pattern by developing the organic film after heating. After formation of the crosslinked resin film, the resist pattern is removed. The to-be-processed film is processed using the crosslinked resin film as a mask. | 12-11-2008 |
20090011370 | PATTERN FORMING METHOD USING TWO LAYERS OF RESIST PATTERNS STACKED ONE ON TOP OF THE OTHER - A pattern forming method using two layers of resist pattern stacked one on the other has been disclosed. First, a first resist pattern is formed on a to-be-processed film. The first resist pattern is slimmed. On the slimmed first resist pattern and to-be-processed film, a second resist pattern is formed. With the first and second resist patterns as a mask, the film is processed. | 01-08-2009 |
20100021850 | PATTERN FORMING METHOD - A pattern forming method has forming a first resist film on a processed film, patterning the first resist film into a first resist pattern, forming a first film containing a photo acid generator so as to cover the first resist pattern, forming a second resist film so as to cover the first film, irradiating a predetermined region of the second resist film with exposure light, heating the first film and the second resist film, performing a development process, removing the second resist film of the predetermined region and forming a second resist pattern while the first film is left, and etching the processed film with the first resist pattern and the second resist pattern as a mask. | 01-28-2010 |
20120127454 | PATTERN FORMING METHOD - According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks. | 05-24-2012 |
20120214094 | METHOD OF FORMING PATTERN - According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively. | 08-23-2012 |
20130075360 | METHOD OF FORMING PATTERN - According to one embodiment, there is provided a method of forming a pattern, includes forming a guide pattern including a first region having a first surface energy and a second region having a second surface energy on a to-be-processed film, the first and second regions alternately arranged in one direction, forming a block copolymer layer on the guide pattern, and causing microphase separation in the block copolymer layer, the microphase-separated structure is a lamellar block copolymer pattern. | 03-28-2013 |
20130078570 | METHOD OF FORMING PATTERN AND LAMINATE - According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer. | 03-28-2013 |
20130133825 | PATTERN FORMATION METHOD AND POLYMER ALLOY BASE MATERIAL - According to one embodiment, a pattern formation method is provided, the pattern formation includes: laminating a self-assembled monolayer and a polymer film on a substrate; causing chemical bonding between the polymer film and the self-assembled monolayer by irradiation with an energy beam to form a polymer surface layer on the self-assembled monolayer; and forming on the polymer surface layer a polymer alloy having a pattern of phase-separated structures. | 05-30-2013 |