Patent application number | Description | Published |
20090045810 | MAGNETIC DETECTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A magnetic detecting device includes a first and a second magnetoresistive element, and a first and a second fixed resistor connected in series to the first and the second magnetoresistive element, respectively. The first and the second magnetoresistive element each include a pinned magnetic layer and a free magnetic layer with a nonmagnetic conductive layer in between. The first and the second magnetoresistive element have the same layer structure except that the nonmagnetic conductive layers have different thicknesses. The thicknesses of the nonmagnetic conductive layers are set so that a positive interlayer coupling magnetic field acts between the free magnetic layer and the pinned magnetic layer of the first magnetoresistive element and a negative interlayer coupling magnetic field acts between the free magnetic layer and the pinned magnetic layer of the second magnetoresistive element. The first and the second fixed resistor have the same layer structure. | 02-19-2009 |
20090147409 | MAGNETORESISTIVE ELEMENT, MAGNETIC SENSOR, AND METHOD OF PRODUCING THE MAGNETORESISTIVE ELEMENT - The thickness of an antiferromagnetic layer (IrMn) and the thickness of a nonmagnetic interlayer (Cu) are adjusted so as to be within the area surrounded by boundaries a to f on the graph of | 06-11-2009 |
20090315552 | MAGNETIC DETECTION DEVICE HAVING BRIDGE CIRCUIT PROVIDED WITH RESISTANCE ADJUSTMENT PORTION AND METHOD OF MANUFACTURING THE SAME - In a magnetic detection device using a magnetic resistance element, the resistance of a layer having a multi-layer structure can be easily adjusted without causing damages to the layer. A magneto-resistance layer is connected in series to a reference resistance layer, and a magneto-resistance layer is connected in series to a reference resistance layer on a substrate. A voltage is applied between a power supply layer and a grounding layer. A first output conductive layer and the reference resistance layer extend in parallel to each other so that they are partially electrically connected to each other via a connection layer. A second output conductive layer and the reference resistance layer extend in parallel to each other so that they are partially electrically connected to each other via a connection layer. Accordingly, it is possible to adjust the resistance of the reference resistance layers by selecting the respective positions of the connection layers. | 12-24-2009 |
20100066359 | MAGNETIC DETECTION DEVICE AND ELECTRICAL PRODUCT - An integrated circuit is provided with two output terminals and a mode switch circuit which includes a pair of switch terminals. The mode switch circuit is allowed to switch the output mode between the 1-output mode for outputting the (+) magnetic field detection signal and the (−) magnetic field detection signal from the output terminal, and the 2-output mode for outputting the (+) magnetic field signal from the output terminal as one of the output terminals, and the (−) magnetic field detection signal from the output terminal as the other output terminal in accordance with the shortcircuit state or the non-shortcircuit state between the switch terminals. The switch terminals are exposed on the surface of the device, and the shortcircuit state and the non-shortcircuit state may be externally adjusted. | 03-18-2010 |
20100079135 | MAGNETIC DETECTING DEVICE AND METHOD FOR MAKING THE SAME, AND ANGLE DETECTING APPARATUS, POSITION DETECTING APPARATUS, AND MAGNETIC SWITCH EACH INCLUDING THE MAGNETIC DETECTING DEVICE - In a magnetic detecting device, conductive patterns are formed on a substrate in a surrounding region outside chips, except for a region between the chips. Inner connection pads formed on each of the chips are wire-bonded to their corresponding conductive patterns, so that the chips are electrically connected to each other. | 04-01-2010 |
20100141251 | MAGNETIC DETECTION DEVICE - A magnetic detection device includes a sensor unit including a sensor pattern having a plurality of magnetoresistance effect films whose ends in the length direction thereof are coupled via return portions, and electrode units formed at both ends of the sensor pattern in the longitudinal direction thereof. A non-magnetic conductor is electrically connected across a top surface of one of a pair of magnetoresistance effect films that are coupled via the corresponding one of the return portions and that face each other and a top surface of the other magnetoresistance effect film. Therefore, the resistance value between the electrode units can be adjusted without increasing the dimensions of the sensor unit, and deterioration or variation in magnetic characteristics can be reduced. | 06-10-2010 |
20100253330 | MAGNETIC SENSOR AND MAGNETIC SENSOR MODULE - A magnetic sensor including a magnetoresistive effect element has the following structure. Element units each having an element width W | 10-07-2010 |
20100283457 | MAGNETIC SENSOR AND METHOD FOR PRODUCING THE SAME - A magnetoresistive element includes, in plan view, an element section and an extension region extending from an end portion of the element section; and an insulation layer is formed on the element section and the extension region. A contact hole having a recessed shape, penetrating through the insulation layer, and extending at least to the extension region is formed; an electrode pad is formed in the contact hole; a surface of the electrode pad is exposed to outside; and the electrode pad is electrically connected to the extension region. The element section and the extension region are integrally formed so as to have an identical layer configuration employing a magnetoresistive effect in which electrical resistance varies in response to external magnetic fields. | 11-11-2010 |
20120007593 | MAGNETIC SENSOR PACKAGE - In a magnetic chip package including a metal thin film, which is constituted of a metal material containing a magnetic body and is disposed on a surface of a plastic substrate opposite to the side a sensor chip is fixed, a demagnetizing field is generated in the metal thin film in a direction orthogonal to the direction of a magnetic field detected by a magnetic sensor. Specifically, the metal thin film is formed of plural metal thin sub-films, each metal thin sub-film having a rectangular shape with a length orthogonal to the direction of the magnetic field detected by the magnetic sensor larger than a width parallel to the direction of the magnetic field, and each metal thin sub-films are aligned at predetermined intervals in a direction parallel to the direction of the detected magnetic field. | 01-12-2012 |
20120200292 | MAGNETIC SENSOR - A magnetic sensor includes magnetoresistive elements and a soft magnetic body. The magnetoresistive elements have multi layers including a magnetic layer and a nonmagnetic layer on a substrate, and exert a magnetoresistance effect. The soft magnetic body is electrically disconnected with the magnetoresistive elements, and converts a vertical magnetic field component from the outside into a magnetic field component in a horizontal direction so as to provide the magnetoresistive elements with the horizontally converted magnetic field component. The magnetoresistive elements have a pinned magnetic layer having a fixed magnetization direction and a free magnetic layer having a variable magnetization direction. The free magnetic layer is stacked on the pinned magnetic layer with a nonmagnetic layer interposed between the free magnetic layer and the pinned magnetic layer. The magnetization directions of the pinned magnetic layers of the magnetoresistive elements are the same direction. The magnetoresistive elements form a bridge circuit. | 08-09-2012 |
20120217961 | MAGNETIC SENSOR - A magnetic sensor includes a plurality of magnetoresistance effect elements and soft magnetic bodies. Each of the magnetoresistance effect elements is formed by stacking a magnetic layer and a non-magnetic layer on a substrate so as to exhibit a magnetoresistance effect. The magnetoresistance effect element is configured such that element portions and electrode layers are alternately disposed. A soft magnetic body is disposed on one and the other sides of each of the element portions in the Y direction, and the soft magnetic bodies are displaced from each other in the X direction. With this arrangement, an external magnetic field applied in the X1 direction is changed into an external magnetic field in the Y direction when passing through the soft magnetic bodies, and the changed external magnetic field flows into the element portions. | 08-30-2012 |
20120217962 | MAGNETIC SENSOR AND MANUFACTURING METHOD THEREFOR - A magnetic sensor having no sensitivity differences between sensitivity axes, and an easy manufacturing method therefor are provided. The method includes a process of forming first stacked films for a magnetoresistive element on a substrate. This element has a sensitivity axis in a certain direction and includes a self-pinned ferromagnetic pinned layer in which first and second ferromagnetic films are antiferromagnetically coupled through an antiparallel coupling layer, a nonmagnetic intermediate layer, and a soft magnetic free layer. The method further includes a process of removing a region of the first stacked films from the substrate. The remaining region of the films includes at least a region to be left to form the element. The method furthermore includes a process of forming second stacked films for a magnetoresistive element, which has a sensitivity axis in a direction different from the certain direction and has the same structure, on the exposed substrate. | 08-30-2012 |