Patent application number | Description | Published |
20140070268 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an n | 03-13-2014 |
20140246750 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n | 09-04-2014 |
20140246755 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - Hydrogen atoms and crystal defects are introduced into an n− semiconductor substrate by proton implantation. The crystal defects are generated in the n− semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current. | 09-04-2014 |
20140291723 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A method of producing a seminconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer. A disorder generated in a proton passage region is reduced by a laser annealing process to form an n-type disorder reduction region. As such, the n-type field stop layer and the n-type disorder reduction region are formed by the proton implantation. Therefore, it is possible to provide a stable and inexpensive semiconductor device which has low conduction resistance and can improve electrical characteristics, such as a leakage current, and a method for producing the semiconductor device. | 10-02-2014 |
20140374793 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE | 12-25-2014 |
20140377938 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A method for producing a semiconductor device is disclosed which includes a diffusion step of forming, on a CZ-FZ silicon semiconductor substrate, a deep diffusion layer involving a high-temperature and long-term thermal diffusion process which is performed at a thermal diffusion temperature of 1290° C. to a melting temperature of a silicon crystal for 100 hours or more; and a giving step of giving a diffusion source for an interstitial silicon atom to surface layers of two main surfaces of the silicon semiconductor substrate before the high-temperature, long-term thermal diffusion process. The step of giving the diffusion source for the interstitial silicon atom to the surface layers of the two main surfaces of the silicon semiconductor substrate is performed by forming thermally-oxidized films on two main surfaces of the silicon semiconductor substrate or by implanting silicon ions into surface layers of the two main surfaces of the silicon semiconductor substrate. | 12-25-2014 |
20140377942 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device suppresses loss of vacuum in a chamber of an ion implanter, sag of a resist mask pattern for ion implantation, and producing a resist residue after ashing. First ion implanting process implants n-type impurity to form n | 12-25-2014 |
20150024556 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes an input electrode provided on a front surface of a semiconductor substrate of a first conductivity type and an output electrode provided on a rear surface of the semiconductor substrate. The device has reduced deterioration of electrical characteristics when manufactured by a method including introducing impurities into the rear surface of the semiconductor substrate; activating the impurities using a first annealing process to form a first semiconductor layer, which is a contact portion in contact with the output electrode, in a surface layer of the rear surface; radiating protons to the rear surface; and activating the protons radiated using a second annealing process to form a second semiconductor layer of the first conductivity type, which has a higher impurity concentration than the semiconductor substrate, in a region that is deeper than the first semiconductor layer from the rear surface of the semiconductor substrate. | 01-22-2015 |