Patent application number | Description | Published |
20090098741 | METHOD FOR FORMING ULTRA-THIN BORON-CONTAINING NITRIDE FILMS AND RELATED APPARATUS - Boron-containing nitride films, including silicon boron nitride and boron nitride films, are deposited during, e.g., integrated circuit fabrication. The films are deposited in a process chamber having a reaction space that is defined as an open volume of the chamber directly above the substrate. The boron-containing nitride films are formed by flowing silicon and boron precursors into the process chamber while maintaining the volume, as measured under standard conditions, of silicon and boron precursors, e.g., SiH | 04-16-2009 |
20090155488 | SHOWER PLATE ELECTRODE FOR PLASMA CVD REACTOR - Methods and apparatuses for plasma chemical vapor deposition (CVD). In particular, a plasma CVD apparatus having a cleaning function, has an improved shower plate with holes having a uniform cross-sectional area to yield a high cleaning rate. The shower plate may serve as an electrode, and may have an electrically conductive extension connected to a power source. The shower plate, through which both cleaning gases and reaction source gases flow, may include a hole machined surface area with a size different than conventionally used to ensure a good film thickness uniformity during a deposition process. The size of the hole machined surface area may vary based on the size of a substrate to be processed, or the size of the entire surface of the shower plate. | 06-18-2009 |
20090162170 | TANDEM TYPE SEMICONDUCTOR-PROCESSING APPARATUS - A tandem type semiconductor-processing apparatus includes: a processing section including multiple units arranged in tandem, each of which unit includes a reaction chamber and a load lock chamber with an load lock interface; a FOUP section including at least one FOUP having a wafer cassette and a front opening interface; and a mini-environment section having a single interior connected to the processing section via each load lock interface on one side of the mini-environment section and connected to the FOUP section via each front opening interface on another side of the mini-environment section opposite to the one side. | 06-25-2009 |
20120028469 | METHOD OF TAILORING CONFORMALITY OF Si-CONTAINING FILM - A method of tailoring conformality of a film deposited on a patterned surface includes: (I) depositing a film by PEALD or pulsed PECVD on the patterned surface; (II) etching the film, wherein the etching is conducted in a pulse or pulses, wherein a ratio of an etching rate of the film on a top surface and that of the film on side walls of the patterns is controlled as a function of the etching pulse duration and the number of etching pulses to increase a conformality of the film; and (III) repeating (I) and (II) to satisfy a target film thickness. | 02-02-2012 |
20120164846 | Method of Forming Metal Oxide Hardmask - A method of forming a metal oxide hardmask on a template includes: providing a template constituted by a photoresist or amorphous carbon formed on a substrate; and depositing by atomic layer deposition (ALD) a metal oxide hardmask on the template constituted by a material having a formula Si | 06-28-2012 |
20130014896 | Wafer-Supporting Device and Method for Producing SameAANM Shoji; FumitakaAACI Kawasaki-shiAACO JPAAGP Shoji; Fumitaka Kawasaki-shi JPAANM Fukuda; HideakiAACI TokyoAACO JPAAGP Fukuda; Hideaki Tokyo JP - A wafer-supporting device for supporting a wafer thereon adapted to be installed in a semiconductor-processing apparatus includes: a base surface; and protrusions protruding from the base surface and having rounded tips for supporting a wafer thereon. The rounded tips are such that a reverse side of a wafer is supported entirely by the rounded tips by point contact. The protrusions are disposed substantially uniformly on an area of the base surface over which a wafer is placed, wherein the number (N) and the height (H [μm]) of the protrusions as determined in use satisfy the following inequities per area for a 300-mm wafer: | 01-17-2013 |
20130115763 | METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS - The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide. | 05-09-2013 |
20140017414 | Method for Forming Aluminum Oxide Film Using Al Compound Containing Alkyl Group and Alkoxy or Alkylamine Group - A method for forming a conformal film of aluminum oxide on a substrate having a patterned underlying layer by PEALD includes: adsorbing an Al precursor containing an Al—C bond and an Al—O—C or Al—N—C bond; providing an oxidizing gas and an inert gas; applying RF power to the reactant gas and the reaction-assisting gas to react the adsorbed precursor with the reactant gas on the surface, thereby forming a conformal film of aluminum oxide on the patterned underlying layer of the substrate, wherein the substrate is kept at a temperature of about 200° C. or lower. | 01-16-2014 |
20140273477 | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES - Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). | 09-18-2014 |
20140273531 | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES - Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). | 09-18-2014 |
20150017794 | METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS - The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide. | 01-15-2015 |
20150056540 | Method of Forming Metal Oxide Hardmask - A method of forming a metal oxide hardmask on a template includes: providing a template constituted by a photoresist or amorphous carbon formed on a substrate; and depositing by atomic layer deposition (ALD) a metal oxide hardmask on the template constituted by a material having a formula Si | 02-26-2015 |