Heng-Kai
Heng-Kai Hsu, Hisnchu TW
Patent application number | Description | Published |
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20140261660 | TCOs for Heterojunction Solar Cells - Methods are used to develop and evaluate new materials and deposition processes for use as TCO materials in HJCS solar cells. The TCO layers allow improved control over the uniformity of the TCO conductivity and interface properties, and reduce the sensitivity to the texture of the wafer. In Some embodiments, the TCO materials include indium, zinc, tin, and aluminum. | 09-18-2014 |
Heng-Kai Liu, Yangmei Township TW
Patent application number | Description | Published |
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20080237885 | Method for Improving Design Window - A method of forming photo masks having rectangular patterns and a method for forming a semiconductor structure using the photo masks is provided. The method for forming the photo masks includes determining a minimum spacing and identifying vertical conductive feature patterns having a spacing less than the minimum spacing value. The method further includes determining a first direction to expand and a second direction to shrink, and checking against design rules to see if the design rules are violated for each of the vertical conductive feature patterns identified. If designed rules are not violated, the identified vertical conductive feature pattern is replaced with a revised vertical conductive feature pattern having a rectangular shape. The photo masks are then formed. The semiconductor structure can be formed using the photo masks. | 10-02-2008 |
Heng-Kai Liu, Pingzhen TW
Patent application number | Description | Published |
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20150179550 | Wiring Layout Having Differently Shaped Vias - A method of forming photo masks having rectangular patterns and a method for forming a semiconductor structure using the photo masks is provided. The method for forming the photo masks includes determining a minimum spacing and identifying vertical conductive feature patterns having a spacing less than the minimum spacing value. The method further includes determining a first direction to expand and a second direction to shrink, and checking against design rules to see if the design rules are violated for each of the vertical conductive feature patterns identified. If designed rules are not violated, the identified vertical conductive feature pattern is replaced with a revised vertical conductive feature pattern having a rectangular shape. The photo masks are then formed. The semiconductor structure can be formed using the photo masks. | 06-25-2015 |