Patent application number | Description | Published |
20130317182 | PROCESS FOR MANUFACTURING BRANCHED AROMATIC POLYCARBONATE RESIN WITH DESIRED DEGREE OF BRANCHING - [Problem] To provide a process for manufacturing, easily and using a conventional branching agent, a branched aromatic polycarbonate resin which has both a sufficiently high molecular weight and a desired degree of branching. [Solution] A branched aromatic polycarbonate resin having a degree of branching (N value) controlled within a specific range is manufactured by subjecting an aromatic polycarbonate prepolymer that has a branched structure introduced using a specific amount of a branching agent to molecular-weight-increasing linking reaction with an aliphatic diol compound in the presence of a transesterification catalyst under the condition of a reduced pressure. The amount (A) of the branching agent used in adjusted on the basis of the correlation between the amount (A) of the branching agent used and the N value of the branched aromatic polycarbonate resin. | 11-28-2013 |
20140206826 | HIGH-FLUIDITY POLYCARBONATE COPOLYMER, PROCESS FOR PRODUCTION HIGHLY POLYMERIZED AROMATIC POLYCARBONATE RESIN AND AROMATIC POLYCARBONATE COMPOUND (AS AMENDED) - The present inventions provide a novel polycarbonate copolymer having high fluidity and high molecular weight which is formed of a structural unit derived from an aliphatic diol compound and a structural unit derived from an aromatic dihydroxy compound, having a structure represented by the formula (III): | 07-24-2014 |
20150133611 | METHOD FOR CONTINUOUS PRODUCTION OF HIGH MOLECULAR WEIGHT POLYCARBONATE RESIN - A high molecular weight polycarbonate resin is continuously produced by subjecting an aromatic polycarbonate prepolymer and an aliphatic diol compound to a linking and highly polymerizing reaction. Even an aliphatic diol compound having a comparatively low boiling point can be allowed to efficiently contribute to the linking and highly polymerizing reaction. An aromatic polycarbonate prepolymer is produced by a polycondensation reaction between an aromatic dihydroxy compound and a diester carbonate, adding an aliphatic diol compound having an aliphatic group bonding to a terminal hydroxyl group to obtain a prepolymer mixture, and subjecting the resulting prepolymer mixture to a linking and highly polymerizing reaction under reduced pressure. The aliphatic diol compound is added at a pressure exceeding 200 torr, and the prepolymer mixture is subjected to a linking and highly polymerizing reaction before the terminal hydroxyl group concentration of the aromatic polycarbonate prepolymer in the prepolymer mixture reaches 2000 ppm. | 05-14-2015 |
20150267006 | PROCESS FOR PREPARING HIGHLY POLYMERIZED AROMATIC POLYCARBONATE RESIN - The present invention is to provide a process for preparing a highly polymerized aromatic polycarbonate resin, which comprises the steps of a highly polymerizing step for reacting an aromatic polycarbonate prepolymer and an aliphatic diol compound in the presence of a transesterification catalyst to obtain a highly polymerized aromatic polycarbonate resin, a cyclic carbonate removal step for removing at least part of the cyclic carbonate by-produced in the above highly polymerizing step out of the reaction system, and a recycle step of hydrolyzing the cyclic carbonate removed in the cyclic carbonate removal step to obtain an aliphatic diol compound and using the obtained aliphatic diol compound as at least a part of the aliphatic diol compound to be used in the highly polymerizing step. | 09-24-2015 |
20150284509 | AROMATIC POLYCARBONATE RESIN COMPOSITION - The present invention provides an aromatic polycarbonate resin composition having a high molecular weight and less amount of a heterologous structure, retaining good qualities, and excellent in thermal stability, and an improved preparation process thereof. | 10-08-2015 |
Patent application number | Description | Published |
20100189066 | METHOD FOR ENSURING MEDIUM ACCESS IN A WIRELESS NETWORK - Method and apparatus for controlling transmission of a data stream from a station. A QoS registration frame is received, via an access point, from the station. The QoS registration frame includes information indicating a request for transmission of a data stream from the station, and information indicating a minimum required interval and a maximum required interval for an interval which is between start points of two successive durations of a medium dedication. Each duration of the medium dedication represents a time period in which the station is permitted to transmit the data stream. A schedule for the transmission of the data stream is calculated by setting a new interval which is between the minimum required interval and the maximum required interval, when the transmission is admitted. A QoS response frame, which includes information indicating the schedule, is then transmitted from the access point to the station, | 07-29-2010 |
20120087352 | METHOD FOR ENSURING MEDIUM ACCESS IN A WIRELESS NETWORK - Method and apparatus for controlling transmission of a data stream from a station. A QoS registration frame is received, via an access point, from the station. The QoS registration frame includes information indicating a request for transmission of a data stream from the station, and information indicating a minimum required interval and a maximum required interval for an interval which is between start points of two successive durations of a medium dedication. Each duration of the medium dedication represents a time period in which the station is permitted to transmit the data stream. A schedule for the transmission of the data stream is calculated by setting a new interval which is between the minimum required interval and the maximum required interval, when the transmission is admitted. A QoS response frame, which includes information indicating the schedule, is then transmitted from the access point to the station, | 04-12-2012 |
20130100965 | SYSTEM AND METHOD FOR SPREAD SPECTRUM COMMUNICATION - A spreading code generating apparatus carries out M-sequence multiplication and zero value addition of generated orthogonal codes to obtain channel identification codes, and then carries out inverse Fourier transform of the channel identification codes to generate spreading codes and inverse spreading codes. A transmitting apparatus and a receiving apparatus store the spreading codes and the inverse spreading codes generated by the spreading code generating apparatus, respectively, and use a single code respectively selected from the stored codes to carry out spread spectrum communication. | 04-25-2013 |
Patent application number | Description | Published |
20090242983 | SEMICONDUCTOR DEVICE HAVING A FIELD EFFECT TRANSISTOR USING A HIGH DIELECTRIC CONSTANT GATE INSULATING FILM AND MANUFACTURING METHOD OF THE SAME - In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film. | 10-01-2009 |
20130140680 | SEMICONDUCTOR DEVICE - A semiconductor device includes: an active region located in an upper portion of a semiconductor substrate; a through-hole electrode penetrating the substrate, and made of a conductor having a thermal expansion coefficient larger than that of a material for the substrate; and a stress buffer region located in the upper portion of the substrate and sandwiched between the through-hole electrode and the active region. The stress buffer region does not penetrate the substrate and includes a stress buffer part made of a material having a thermal expansion coefficient larger than that of the material for the substrate and an untreated region where the stress buffer part is not present. The stress buffer part is located in at least two locations sandwiching the untreated region in a cross section perpendicular to a surface of the substrate and passing through the through-hole electrode and the active region. | 06-06-2013 |
20130334608 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first transistor formed on a semiconductor substrate, and including a first channel region, and a first gate electrode formed on the first channel region, and a second transistor formed on the semiconductor substrate, and including a second channel region having a conductivity type identical to a conductivity type of the first channel region, and a second gate electrode formed on the second channel region and having a potential identical to a potential of the first gate electrode. A drain of the first transistor is electrically connected to a source of the second transistor. An absolute value of a threshold voltage of the first transistor is greater than an absolute value of a threshold voltage of the second transistor. | 12-19-2013 |
Patent application number | Description | Published |
20090120358 | Spray coating member having excellent injury resistance and so on and method for producing the same - For the purpose of solving problems inherent to a white Al | 05-14-2009 |
20090130436 | Spray coating member having excellent heat emmision property and so on and method for producing the same - For the purpose of solving problems inherent to a plasma spray coating of white base Al | 05-21-2009 |
20090208667 | METHOD FOR MANUFACTURING CERAMIC COVERING MEMBER FOR SEMICONDUCTOR PROCESSING APPARATUS - Producing a ceramic coating member for a semiconductor processing apparatus with a purpose of improving the resistance of members and parts disposed inside of vessels such as semiconductor processing devices for conducting plasma etching treatment in a strong corrosive environment and as a means for solution, forming a porous layer by irradiating an oxide of an element in Group IIIa of the Periodic Table to be coated directly or through an undercoat on the surface of the substrate of a metal or non-metal and further forming a secondary recrystallized layer of the oxide on the porous layer through an irradiation treatment of a high energy such as electron beam and laser beam. | 08-20-2009 |
20100203288 | SPRAY-COATED MEMBER HAVING AN EXCELLENT RESISTANCE TO PLASMA EROSION AND METHOD OF PRODUCING THE SAME - A spray coated member having an excellent resistance to plasma erosion is produced by irradiating an electron beam to an outermost surface layer portion of a ceramic spray coated portion covering a surface of a substrate to form an electron beam irradiated layer. | 08-12-2010 |
20110203468 | PRINTING ROLL AND METHOD OF PRODUCING THE SAME - In order to propose a dry process technique of producing a printing roll having safe and beauty concave portions for printing image area without discharging environmental contaminating substance and a new technique for improving quality of printed matters, this invention is to provide a printing roll with DLC film layer in which laser beam-engraved grooves as concave portions for printing image area are formed on a carbide cermet spray coating formed on a surface of a roll substrate, and a method wherein a carbide cermet spray coating is formed on a surface of a roll substrate roughened by a blast treatment, the surface of the carbide cermet spray coating is ground or ground-polished, then a DLC film is formed on the ground or ground-polished surface and thereafter laser beam-engraved grooves are formed on the surface of the DLC film as a concave portion for printing image area. | 08-25-2011 |
20140370249 | METHOD FOR BLACKENING WHITE FLUORIDE SPRAY COATING, AND FLUORIDE SPRAY COATING COVERED MEMBER HAVING A BLACKENED LAYER ON ITS SURFACE - This invention is to provide a fluoride spray coating covered member having excellent resistance to halogen corrosion and resistance to plasma erosion and displaying identification symbols such as letters, numeric characters, graphic, pattern, firm name, serial number and so on. In the invention, one or more implanting gases selected from fluorine-containing gas, oxygen gas and inert gas are ion-implanted onto a white fluoride spray coating formed on a surface of a substrate, whereby at least a part of the surface of the white fluoride spray coating is changed into a black color to form a black ion-implanted layer. | 12-18-2014 |
20150017463 | METHOD FOR FORMING FLUORIDE SPRAY COATING AND FLUORIDE SPRAY COATING COVERED MEMBER - [Problem] To provide a fluoride spray coating covered member adhered with a fluoride spray coating having excellent properties on quality by suppressing a thermal decomposition reaction and an oxide reaction, and to propose a method for forming a cover by firmly adhering the coating. | 01-15-2015 |
20150064406 | METHOD FOR FORMING FLUORIDE SPRAY COATING, AND FLUORIDE SPRAY COATING COVERED MEMBER - [Problem] To provide a fluoride spray coating covered member in which a fluoride spray coating firmly adheres by coating carbide cermet to a surface of a substrate and interposing it, and to propose a method therefor. [Solution] A fluoride spray coating is formed in such a manner that an undercoat layer of carbide cermet, which covers a substrate in a film-shaped manner while a tip portion of carbide cermet particles is embedded in the substrate, or a primer part of carbide cermet, is formed by blowing a carbide cermet material at a high velocity by using a spray gun to a surface of the substrate, and after that, a fluoride particle is sprayed thereon. | 03-05-2015 |
Patent application number | Description | Published |
20090090978 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A high-voltage transistor and a peripheral circuit including a second conductivity type MOSFET are provided together on a first conductivity type semiconductor substrate. The high-voltage transistor includes: a low concentration drain region of a second conductivity type formed in the semiconductor substrate; a low concentration source region of a second conductivity type formed in the semiconductor substrate and spaced apart from the low concentration drain region; and a high concentration source region of a second conductivity type having a diffusion depth deeper than that of the low concentration source region. A diffusion depth of the low concentration source region is equal to that of source/drain regions of the MOSFET. | 04-09-2009 |
20090206366 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Disclosed is a semiconductor device including: an N-type RESURF region formed in a P-type semiconductor substrate; a P-type base region formed in an upper portion of the semiconductor substrate so as to be adjacent to the RESURF region; an N-type emitter/source region formed in the base region so as to be apart from the RESURF region; a P-type base connection region formed in the base region so as to be adjacent to the emitter/source region; a gate insulating film and a gate electrode overlying the emitter/source region, the base region, and the RESURF region; and a P-type collector region formed in the RESURF region so as to be apart from the base region. Lattice defect is generated in the semiconductor substrate such that a resistance value of the semiconductor substrate is twice or more the resistance value of the semiconductor substrate that depends on the concentration of an impurity implanted in the semiconductor substrate. | 08-20-2009 |
20100001315 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first diffusion region of a second conductivity type formed in an upper portion of a semiconductor substrate of a first conductivity type, a second diffusion region formed in a surface portion of the first diffusion region, a third diffusion region of the second conductivity type formed a predetermined distance spaced apart from the second diffusion region in the surface portion of the semiconductor substrate, a fourth diffusion region of the first conductivity type formed adjacent to the third diffusion region and electrically connected to the third diffusion region, a gate electrode formed on a part between the first diffusion region and the third diffusion region, and an insulating film formed thereon. The impurity concentration of the first diffusion region is set higher than an impurity concentration at which a depletion region extending from an junction interface between the first diffusion region and the semiconductor substrate is formed in a part of the first diffusion region which is between the second diffusion region and the gate electrode when a voltage is applied to the second diffusion region. | 01-07-2010 |