Patent application number | Description | Published |
20110143685 | Multiband Low Noise Amplifier (LNA) With Parallel Resonant Feedback - A multiband low noise amplifier (LNA) with parallel resonant feedback includes an amplifier element configured to receive a radio frequency (RF) signal at an RF input and provide an amplified version of the RF signal at an RF output, a resistive feedback circuit coupled between the RF input and the RF output, and a plurality of series-coupled resonant circuits coupled in series with the resistive feedback circuit between the RF input and the RF output of the amplifier element, wherein each of the resonant circuits is configured to operate as an effective short circuit at a frequency other than a resonant frequency and configured to operate as an effective open circuit at the resonant frequency to decouple the resistive feedback from the amplifier element at each resonant frequency. | 06-16-2011 |
20140009204 | RADIO-FREQUENCY SWITCHES HAVING FREQUENCY-TUNED BODY BIAS - Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each FET having a respective gate and body. A resonance circuit connects the body of each of the at least one FET to a reference node. The resonance circuit may be configured to behave as an approximately closed circuit at low frequencies below a selected value and an approximately open circuit at an operating frequency, wherein the approximately closed circuit allows removal of surface charge from the body to the reference node. | 01-09-2014 |
20140009207 | RADIO-FREQUENCY SWITCH HAVING DYNAMIC GATE BIAS RESISTANCE AND BODY CONTACT - Radio-frequency (RF) switch circuits having switchable transistor coupling for improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between first and second nodes, each FET having a gate and body. A switchable resistive coupling circuit is connected to each of the respective gates. A switchable resistive grounding circuit is connected to each of the respective bodies. | 01-09-2014 |
20140009214 | CIRCUITS, DEVICES, METHODS AND APPLICATIONS RELATED TO SILICON-ON-INSULATOR BASED RADIO-FREQUENCY SWITCHES - Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate and a body. A compensation network including a gate-coupling circuit couples the gates of each pair of neighboring FETs. The compensation network may further including a body-coupling circuit that couples the bodies of each pair of neighboring FETs. | 01-09-2014 |