Patent application number | Description | Published |
20110260232 | DEVICE INCLUDING MEMORY ARRAY AND METHOD THEREOF - An electronic device includes a first memory cell and a second memory cell, of a nonvolatile memory array. The first memory cell includes a body region, a gate structure, a source region, and a drain region. The second memory cell includes a body region, a gate structure, a source region, and a drain region. In one embodiment, the body of the second memory cell is physically isolated from the body region of the first memory cell. A bitline segment is electrically connected to the drain region of the first memory cell and to the drain region of the second memory cell. | 10-27-2011 |
20110316060 | ELECTRONIC DEVICE INCLUDING A NONVOLATILE MEMORY CELL - An electronic device can include a nonvolatile memory cell that includes a capacitor, a tunnel structure, a state transistor, and an access transistor. In an embodiment, the capacitor and tunnel structure can include upper electrodes, wherein the upper electrode of the capacitor has a first conductivity type, and the upper electrode of the tunnel structure includes at least a portion that has a second conductivity type opposite the first conductivity type. In another embodiment, a process of forming the nonvolatile memory is performed using a single poly process. In a further embodiment, charge carriers can tunnel through a gate dielectric layer of the state transistor during programming and tunnel through a tunnel dielectric of the tunnel transistor during erasing. | 12-29-2011 |
20110316067 | ELECTRONIC DEVICE INCLUDING A TUNNEL STRUCTURE - An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region. | 12-29-2011 |
20110317492 | METHOD OF USING A NONVOLATILE MEMORY CELL - An electronic device can include a nonvolatile memory cell. In a particular embodiment, during an erase pulse, all unselected lines are at substantially the same voltage, and a row or segment of a row, such as a word, is erased during the erase pulse. In another embodiment, selected control gate and erase lines are at substantially the same voltage during a programming pulse. In a further embodiment, charge carriers tunnel through a dielectric layer of a component during a program pulse, and charge carriers tunnel through a different dielectric layer of a different component during an erase pulse. | 12-29-2011 |
20130161723 | Electronic Device Including a Tunnel Structure - An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region. | 06-27-2013 |
20130175593 | ELECTRONIC DEVICE INCLUDING A NONVOLATILE MEMORY CELL - An electronic device can include a nonvolatile memory cell that includes a capacitor, a tunnel structure, a state transistor, and an access transistor. In an embodiment, the capacitor and tunnel structure can include upper electrodes, wherein the upper electrode of the capacitor has a first conductivity type, and the upper electrode of the tunnel structure includes at least a portion that has a second conductivity type opposite the first conductivity type. In another embodiment, a process of forming the nonvolatile memory is performed using a single poly process. In a further embodiment, charge carriers can tunnel through a gate dielectric layer of the state transistor during programming and tunnel through a tunnel dielectric of the tunnel transistor during erasing. | 07-11-2013 |
20140021526 | ELECTRONIC DEVICE INCLUDING A TUNNEL STRUCTURE - An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region. | 01-23-2014 |
20140022844 | ELECTRONIC DEVICE INCLUDING A NONVOLATILE MEMORY CELL INCLUDING A TUNNEL STRUCTURE - An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region. | 01-23-2014 |
20150070992 | Process of Forming an Electronic Device Including a Nonvolatile Memory Cell - An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region. | 03-12-2015 |