Patent application number | Description | Published |
20090298283 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - ORGANIC MEDIUM COMPONENTS - Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device. | 12-03-2009 |
20100243048 | METAL PASTES AND USE THEREOF IN THE PRODUCTION OF SILICON SOLAR CELLS - Metal pastes comprising (a) at least one electrically conductive metal powder selected from the group consisting of silver, copper and nickel, (b) at least one lead-free glass frit with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO | 09-30-2010 |
20100269893 | METAL PASTES AND USE THEREOF IN THE PRODUCTION OF POSITIVE ELECTRODES ON P-TYPE SILICON SURFACES - Metal pastes comprising (a) at least one electrically conductive metal powder selected from the group consisting of silver, copper, and nickel, (b) at least one p-type silicon alloy powder, and (c) an organic vehicle, wherein the p-type silicon alloy is selected from the group consisting of alloys comprising silicon and boron, alloys comprising silicon and aluminum and alloys comprising silicon, boron and aluminum. | 10-28-2010 |
20100294359 | PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER - A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps:
| 11-25-2010 |
20100294360 | PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER - A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps:
| 11-25-2010 |
20100294361 | PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER - A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: | 11-25-2010 |
20100317143 | PROCESS OF FORMING A SILICON SOLAR CELL - A process for the production of a silicon solar cell comprising application and firing of an aluminum paste which comprises magnesium oxide and/or magnesium compounds capable of forming magnesium oxide on firing on the back-side of a silicon wafer provided with a silicon nitride antireflective coating on its front-side and being contaminated with silicon nitride on its back-side, and firing the aluminum paste after its application. | 12-16-2010 |
20110120551 | PROCESS FOR THE FORMATION OF A SILVER BACK ELECTRODE OF A PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELL - A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps:
| 05-26-2011 |
20110139238 | PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL - A process for the production of a MWT silicon solar cell comprising the steps:
| 06-16-2011 |
20110146776 | GLASS COMPOSITIONS USED IN CONDUCTORS FOR PHOTOVOLTAIC CELLS - The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. | 06-23-2011 |
20110146781 | PROCESS OF FORMING A GRID CATHODE ON THE FRONT-SIDE OF A SILICON WAFER - A process for the production of a grid cathode on the front-side of a silicon wafer by applying and firing a metal paste on the silicon wafer in a front-side grid electrode pattern to form a seed grid cathode and subsequently subjecting the silicon wafer to a LIP process, wherein the metal paste comprises an organic vehicle and an inorganic content comprising (a) 90 to 98 wt.-% of at least one electrically conductive metal powder selected from the group consisting of nickel, copper and silver, and (b) 0.25 to 8 wt.-% of at least one glass frit selected from the group consisting of glass frits containing 47.5 to 64.3 wt.-% of PbO, 23.8 to 32.2 wt.-% of SiO | 06-23-2011 |
20110192456 | PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL - A process for the production of a MWT silicon solar cell comprising the steps: | 08-11-2011 |
20110240124 | METAL PASTES AND USE THEREOF IN THE PRODUCTION OF SILICON SOLAR CELLS - Metal pastes comprising (a) at least one electrically conductive metal powder selected from the group consisting of silver, copper and nickel, (b) at least one lead-containing glass frit with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO | 10-06-2011 |
20120199192 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - ORGANIC MEDIUM COMPONENTS - Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device. | 08-09-2012 |
20130061918 | PROCESS FOR THE FORMATION OF A SILVER BACK ELECTRODE OF A PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELL - A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps:
| 03-14-2013 |
20130074916 | PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL - A process for the production of a MWT silicon solar cell, wherein a conductive metal paste with no or only poor fire-through capability is applied, dried and fired to form a continuous metallization comprising a top set of conductive metal collector lines and a metallization of the inside of the holes of a p-type MWT silicon solar cell wafer, wherein the top set of conductive metal collector lines superimposes a bottom set of conductive metal collector lines on the front-side of the p-type MWT silicon solar cell wafer, said bottom set of conductive metal collector lines having no contact with the inside of the holes. | 03-28-2013 |
20130074917 | PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL - A process for the production of a MWT silicon solar cell, wherein a conductive metal paste with no or only poor fire-through capability is applied, dried and fired to form a continuous metallization comprising a top set of conductive metal collector lines and a metallization of the inside of the holes of an n-type MWT silicon solar cell wafer, wherein the top set of conductive metal collector lines superimposes a bottom set of conductive metal collector lines on the front-side of the n-type MWT silicon solar cell wafer, said bottom set of conductive metal collector lines having no contact with the inside of the holes. | 03-28-2013 |
20130192670 | ALUMINUM PASTE AND USE THEREOF IN THE PRODUCTION OF PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELLS - An aluminum paste having no or only poor fire-through capability and comprising particulate aluminum, an organic vehicle and at least one glass frit selected from the group consisting of lead-free glass frits containing 0.5 to 15 wt. % SiO | 08-01-2013 |
20130192671 | CONDUCTIVE METAL PASTE AND USE THEREOF - A conductive metal paste having no or only poor fire-through capability and including (a) particulate silver, (b) at least one lead-free glass frit including 0.5 to 15 wt. % SiO | 08-01-2013 |
20130224905 | SILVER PASTE AND USE THEREOF IN THE PRODUCTION OF SOLAR CELLS - A silver paste comprising particulate silver, at least one glass frit, and an organic vehicle, wherein the particulate silver includes 10 to 100 wt-% of spherically-shaped silver particles, based on the total weight of the particulate silver, wherein the spherically-shaped silver particles have an average particle size in the range of 1 to 3 μm, a crystallite size in the range of 40 to 60 nm and a smooth particle surface. | 08-29-2013 |
20130276881 | PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER - A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps:
| 10-24-2013 |
20130340821 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - ORGANIC MEDIUM COMPONENTS - Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device. | 12-26-2013 |