Patent application number | Description | Published |
20080239533 | METHOD OF MAGNETIC TRANSFER AND MAGNETIC RECORDING MEDIUM - The present invention provides a method of magnetic transfer comprising: an initial magnetization step of performing an initial magnetization by applying a DC magnetic field perpendicular to a disk shaped perpendicular magnetic recording medium which is formed by laminating a soft magnetic layer and a magnetic layer on a substrate; an initial magnetization cleaning step of applying an in-plane magnetic field having an intensity larger than 100 [Oe] and less than an intensity of Hn, to the perpendicular magnetic recording medium after passed through the initial magnetization step in radial direction which directed from a center to an outer of the perpendicular magnetic recording medium. After or in a time of the magnetic transfer, a magnetic cleaning may be performed by applying an in-plane magnetic field having the same intensity as the initial magnetization cleaning step in radial direction instead of the initial magnetization cleaning or in combination. | 10-02-2008 |
20090073593 | MASTER CARRIER FOR MAGNETIC TRANSFER, MAGNETIC TRANSFER METHOD AND MAGNETIC RECORDING MEDIUM - A master carrier for magnetic transfer includes a transfer portion on which a magnetic layer corresponding to magnetic information for transfer is formed, and a non-transfer portion forming a concave shape relatively low with respect to the transfer portion having the magnetic layer, wherein the magnetic layer of the transfer portion has perpendicular magnetic anisotropy, with residual magnetization Mr of 500 emu/cc or less, and saturation magnetization Ms of 900 emu/cc or more. CoPt can be used as a material of the magnetic layer, and use of Co | 03-19-2009 |
20090237823 | MAGNETIC TRANSFER METHOD FOR MAGNETIC RECORDING MEDIUM, AND MAGNETIC RECORDING MEDIUM - A magnetic transfer method including initially magnetizing a perpendicular magnetic recording medium by applying a DC magnetic field thereto in a perpendicular direction, and applying, to the perpendicular magnetic recording medium, a DC magnetic field for 100 nsec to 1 sec in an opposite direction to the magnetic field applied in initial magnetization with the recording medium being closely attached to a magnetic transfer master carrier which transfers magnetic information to the recording medium with being brought into contact with the recording medium, wherein the master carrier includes transfer portions on which surfaces a magnetic layer corresponding to magnetic information is laid, and non-transfer portions which are concave portions lower in height than the transfer portions, and wherein the magnetic layer has perpendicular magnetic anisotropy and has a residual magnetization Mr of 500 emu/cc or lower and a saturation magnetization Ms of 900 emu/cc or higher. | 09-24-2009 |
20090244746 | MAGNETIC TRANSFER METHOD AND MAGNETIC RECORDING MEDIUM - A magnetic transfer method including initially magnetizing a disc-shaped perpendicular magnetic recording medium by applying, to the recording medium in a circumference direction, a magnetic field whose direction is inclined at an angle within a range of ±50° with respect to a perpendicular line (0°) to the medium surface, closely attaching a concavo-convex pattern of a magnetic transfer master carrier to the recording medium, and transferring magnetic information to the magnetic layer of the medium by applying a magnetic field to the recording medium and the master carrier closely attached to each other, wherein the concavo-convex pattern includes transfer portions on which surfaces a magnetic layer corresponding to the magnetic information is laid, and non-transfer portions which are concave portions, and wherein the magnetic layer has perpendicular magnetic anisotropy, a residual magnetization Mr of 500 emu/cc or lower, and a saturation magnetization Ms of 900 emu/cc or higher. | 10-01-2009 |
20100079886 | MAGNETIC TRANSFER MASTER CARRIER, MAGNETIC TRANSFER METHOD USING THE SAME, AND MAGNETIC RECORDING MEDIUM - A magnetic transfer master carrier to be placed on a perpendicular magnetic recording medium, including: a concavo-convex pattern corresponding to magnetic information to be transferred to the medium by application of a magnetic field, wherein a length (La) of a convex portion in the concavo-convex pattern and a length (Sa) of a space between the convex portion and another convex portion adjacent to the convex portion satisfy 1.3≦(Sa/La)≦1.9, and wherein a cycle length (La+Sa) is in the range of 50 nm to 145 nm, where the length (La) is the width of the convex portion with respect to a circumferential direction measured at a height equivalent to 50% of the height of the convex portion, and the length (Sa) is the width of the space with respect to the circumferential direction measured at the height equivalent to 50% of the height of the convex portion. | 04-01-2010 |
Patent application number | Description | Published |
20120241846 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device comprises a first conductive layer, a second conductive layer, a first inter-electrode insulating film, and a third conductive layer stacked above the first conductive layer, a memory film, a semiconductor layer, an insulating member, and a silicide layer. The memory film and the semiconductor layer is formed on the inner surface of through hole provided in the second conductive layer, the first inter-electrode insulating film, and the third conductive layer. The insulating member is buried in a slit dividing the second conductive layer, the first inter-electrode insulating film, and the third conductive layer. The silicide layer is formed on surfaces of the second conductive layer and the third conductive layer in the slit. The distance between the second conductive layer and the third conductive layer along the inner surface of the slit is longer than that of along the stacking direction. | 09-27-2012 |
20130020627 | SHIFT REGISTER MEMORY AND METHOD OF MANUFACTURING THE SAME - In one embodiment, a shift register memory includes first and second control electrodes extending in a first direction parallel to a surface of a substrate, and facing each other in a second direction perpendicular to the first direction. The memory further includes a plurality of first floating electrodes provided in a line on a first control electrode side between the first and second control electrodes. The memory further includes a plurality of second floating electrodes provided in a line on a second control electrode side between the first and second control electrodes. Each of the first and second floating electrodes has a planar shape which is mirror-asymmetric with respect to a plane perpendicular to the first direction. | 01-24-2013 |
20130021848 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DATA WRITE THEREIN - A memory cell comprises a first semiconductor layer, and a first conductive layer. The first semiconductor layer extends in a perpendicular direction with respect to a semiconductor substrate. The first conductive layer sandwiches a charge storage layer with the first semiconductor layer. A control circuit executes a first program operation and then executes a second program operation. The first program operation supplies a first voltage to the body of the memory cell and supplies a second voltage larger than the first voltage to the gate of the memory cell. The second program operation renders the body of the memory cell in a floating state and supplies a third voltage which is positive to the gate of the memory cell. | 01-24-2013 |
20130075918 | SHIFT REGISTER MEMORY - In one embodiment, a shift register memory includes a substrate, and a channel layer provided on the substrate, and having a helical shape rotating around an axis which is perpendicular to a surface of the substrate. The memory further includes at least three control electrodes provided on the substrate, extending in a direction parallel to the axis, and to be used to transfer charges in the channel layer. | 03-28-2013 |
20130234233 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device comprises a first layer, a first conductive layer, a insulating layer, and a second conductive layer stacked on a substrate, a block insulating layer on inner surfaces of a pair of through-holes formed in the first conductive layer, the insulating layer, and the second conductive layer, and on an inner surface of a connecting hole connecting lower ends of the pair of through-holes, a charge storage layer on the block insulating layer, a second layer on the charge storage layer, and a semiconductor layer on the second layer. The second layer includes an air gap layer on the charge storage layer in the pair of through-holes, and a third conductive layer on the charge storage layer in the connecting hole. | 09-12-2013 |