Patent application number | Description | Published |
20080267721 | METHOD AND APPARATUS FOR TRANSPORTING A SUBSTRATE USING NON-NEWTONIAN FLUID - A method for transporting a substrate is provided. In this method, a non-Newtonian fluid is provided and the substrate is suspended in the non-Newtonian fluid. The non-Newtonian fluid is capable of supporting the substrate. Thereafter, a supply force is applied on the non-Newtonian fluid to cause the non-Newtonian fluid to flow, whereby the flow is capable of moving the substrate along a direction of the flow. Apparatuses and systems for transporting the substrate using the non-Newtonian fluid also are described. | 10-30-2008 |
20080271992 | Apparatus and method for plating semiconductor wafers - An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided. | 11-06-2008 |
20090145464 | Proximity head with angled vacuum conduit system, apparatus and method - A proximity head including a head surface. The head surface including a first flat region and a plurality of first conduits. Each one of the plurality of first conduits being defined by corresponding one of a plurality of first discrete holes. The plurality of first discrete holes residing in the head surface and extending through the first flat region. The head surface also including a second flat region and a plurality of second conduits. The plurality of second conduits being defined by a corresponding plurality of second discrete holes that reside in the head surface and extend through the second flat region. The head surface also including a third flat region disposed between and adjacent to the first flat region and the second flat region and a plurality of third conduits. The plurality of third conduits being defined by a corresponding plurality of third discrete holes that reside in the head surface and extend through the third flat region. The third conduits being formed at a first angle relative to the third flat region. The first angle being between 30 and 60 degrees. A system and method for processing a substrate with a proximity head is also described. | 06-11-2009 |
20090242413 | Electroplating Head and Method for Operating the Same - An electroplating head is disposed above and proximate to an upper surface of a wafer. Cations are transferred from an anode to an electroplating solution within the electroplating head. The electroplating solution flows downward through a porous electrically resistive material at an exit of the electroplating head to be disposed on the upper surface of the wafer. An electric current is established between the anode and the upper surface of the wafer through the electroplating solution. The electric current is uniformly distributed by the porous electrically resistive material present between the anode and the upper surface of the wafer. The electric current causes the cations to be attracted to the upper surface of the wafer. | 10-01-2009 |
20090308410 | METHOD AND MATERIAL FOR CLEANING A SUBSTRATE - Methods for cleaning using a tri-state body are disclosed. A substrate having a particle deposited thereon is provided. A tri-state body that has a solid portion, liquid portion, and a gas portion is generated. A force is applied over the tri-state body to promulgate an interaction between the solid portion and the particle. The tri-state body is removed along with the particle from the surface of the substrate. The interaction between the solid portion and the particle causing the particle to be removed along with the tri-state body. | 12-17-2009 |
20090308413 | APPARATUS AND SYSTEM FOR CLEANING A SUBSTRATE - An apparatus for cleaning a substrate is disclosed. The apparatus having a first head unit and a second head unit. The first head unit is positioned proximate to the surface of the substrate and has a first row of channels defined within configured to supply a foam to the surface of the substrate. The second head unit is positioned substantially adjacent to the first head unit and proximate to the surface of the substrate. A second and a third row of channels are defined within the second head unit. The second row of channels is configured to supply a fluid to the surface of the substrate. The third row of channels is configured to apply a vacuum to the surface of the substrate. | 12-17-2009 |
20090321250 | Apparatus for Plating Semiconductor Wafers - An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided. | 12-31-2009 |
20100059088 | Method and Apparatus for Removing Contamination from Substrate - A cleaning material is disposed over a substrate. The cleaning material includes solid components dispersed within a liquid medium. A force is applied to the solid components within the liquid medium to bring the solid components within proximity to contaminants present on the substrate. The force applied to the solid components can be exerted by an immiscible component within the liquid medium. When the solid components are brought within sufficient proximity to the contaminants, an interaction is established between the solid components and the contaminants. Then, the solid components are moved away from the substrate such that the contaminants having interacted with the solid components are removed from the substrate. | 03-11-2010 |
20100108652 | SYSTEM METHOD AND APPARATUS FOR DRY-IN, DRY-OUT, LOW DEFECT LASER DICING USING PROXIMITY TECHNOLOGY - A substrate processing system includes a first, movable surface tension gradient device, a dicing device and a system controller. The first, movable surface tension gradient device is capable of supporting a first process within a first meniscus. The first meniscus being supported between the first surface tension gradient device and a first surface of the substrate. The first movable surface tension gradient device capable of being moved relative to the first surface of the substrate. The dicing device is oriented to a desired dicing location. The desired dicing location being encompassed by the meniscus. The system controller is coupled to the dicing device and the surface tension gradient device. The system controller includes a process recipe. A method for dicing a substrate is also described. The method of dicing a substrate including placing a substrate in a substrate dicing system, forming a meniscus between a proximity head and a first surface of the substrate, dicing the substrate at a desired dicing location and simultaneously capturing any particles and contaminants generated by dicing the substrate within the meniscus, the meniscus including the desired dicing location and moving the meniscus in a desired dicing direction. | 05-06-2010 |
20100139694 | Cleaning Compound and Method and System for Using the Cleaning Compound - A cleaning compound is provided. The cleaning compound includes about 0.1 weight percent to about 10 weight percent of a fatty acid dispersed in water. The cleaning compound includes an amount of a base sufficient to bring a pH of the fatty acid water solution to about a level where above about 50% of the dispersed fatty acid is ionized. A method for cleaning a substrate, a system for cleaning a substrate, and a cleaning solution prepared by a process are also provided. | 06-10-2010 |
20100170803 | Method and Apparatus for Plating Semiconductor Wafers - First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected. | 07-08-2010 |
20100206340 | Method for Removing Contamination from a Substrate and for Making a Cleaning Solution - A method is provided for removing contamination from a substrate. The method includes applying a cleaning solution having a dispersed phase, a continuous phase and particles dispersed within the continuous phase to a surface of the substrate. The method includes forcing one of the particles dispersed within the continuous phase proximate to one of the surface contaminants. The forcing is sufficient to overcome any repulsive forces between the particles and the surface contaminants so that the one of the particles and the one of the surface contaminants are engaged. The method also includes removing the engaged particle and surface contaminant from the surface of the substrate. A process to manufacture the cleaning material is also provided. | 08-19-2010 |
20110065621 | MATERIAL FOR CLEANING A SUBSTRATE - Material for cleaning using a tri-state body are disclosed. A substrate having a particle deposited thereon is provided. A tri-state body that has a solid portion, liquid portion, and a gas portion is generated. A force is applied over the tri-state body to promulgate an interaction between the solid portion and the particle. The tri-state body is removed along with the particle from the surface of the substrate. The interaction between the solid portion and the particle causes the particle to be removed along with the tri-state body. | 03-17-2011 |
20110081779 | Method and Apparatus for Material Deposition - Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source. | 04-07-2011 |
20110155563 | APPARATUS AND METHOD FOR DEPOSITING AND PLANARIZING THIN FILMS OF SEMICONDUCTOR WAFERS - An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating. | 06-30-2011 |
20120017950 | METHOD AND APPARATUS FOR CLEANING A SUBSTRATE USING NON-NEWTONIAN FLUIDS - A method for cleaning a substrate is provided. In this method, a flow of non-Newtonian fluid is provided where at least a portion of the flow exhibits plug flow. To remove particles from a surface of the substrate, the surface of the substrate is placed in contact with the portion of the flow that exhibits plug flow such that the portion of the flow exhibiting plug flow moves over the surface of the substrate. Additional methods and apparatuses for cleaning a substrate also are described. | 01-26-2012 |
20120145202 | Cleaning Compound and Method and System for Using the Cleaning Compound - A cleaning compound is provided. The cleaning compound includes about 0.1 weight percent to about 10 weight percent of a fatty acid dispersed in water. The cleaning compound includes an amount of a base sufficient to bring a pH of the fatty acid water solution to about a level where above about 50% of the dispersed fatty acid is ionized. A method for cleaning a substrate, a system for cleaning a substrate, and a cleaning solution prepared by a process are also provided. | 06-14-2012 |
20130284217 | Substrate Cleaning System Using Stabilized Fluid Solutions - A substrate cleaning systems are provided. One system includes a proximity head system for applying a meniscus to a surface of a substrate during a cleaning operation. Also provided is a container for holding the solution, the solution being mixed from at least a continuous medium, a polymer material, and a solid material, the polymer material in the solution imparting a finite yield stress to the material, such that the solution is maintained in a stable elastic gel form. A pump coupled to the container is also provided for moving the solution from the container to the proximity head system, where the pump applies at least a minimum shear stress on the solution. The pump provides agitation that exceeds the finite yield stress causing the solution to flow. A conduit is provided between the container and the proximity head system. | 10-31-2013 |
20140059789 | Apparatus for Cleaning a Semiconductor Substrate - An apparatus for processing a substrate is provided. The apparatus includes a solid material having a support side and a contact side. The contact side has an outer surface, and the outer surface is configured to become softer relative to a remainder of the solid material when exposed to an activation solution. The apparatus includes a support structure configured to support the solid material from the support side of the solid material, such that the contact side of the solid material is oriented to face a surface of the substrate, when the substrate is present. Also provided is a gimbaled structure connected to the support structure. The gimbaled structure enabling the outer surface of the contact side to substantially align in a coplanar arrangement with the surface of the substrate, when the substrate is present. A force application structure is coupled to the gimbaled structure. The force application structure is configured for moving the solid material toward and away from the surface of the substrate, when the substrate is present, and further configured for applying a force that presses the outer surface of the solid material against the surface of the substrate, when the substrate is present. | 03-06-2014 |
20140158167 | METHOD AND APPARATUS FOR CLEANING A SUBSTRATE USING NON-NEWTONIAN FLUIDS - A method for cleaning a substrate is provided. In this method, a flow of non-Newtonian fluid is provided where at least a portion of the flow exhibits plug flow. To remove particles from a surface of the substrate, the surface of the substrate is placed in contact with the portion of the flow that exhibits plug flow such that the portion of the flow exhibiting plug flow moves over the surface of the substrate. Additional methods and apparatuses for cleaning a substrate also are described. | 06-12-2014 |
20140251952 | SURFACE MODIFIED POLISHING PAD - In one embodiment, a polishing pad includes a hydrophilic polymer base having a polishing surface, and a metal oxide coating. The metal oxide coating has nanoparticles of metal oxide disposed on the polishing surface. In another embodiment, a processing station includes a rotatable platen, a polishing head, and a precursor delivery system. The polishing head is configured to retain a substrate against the polishing pad. The precursor delivery system is configured to form an oxide coating on a surface of a polishing pad disposed on the platen. In yet another embodiment, a method for modifying a surface of a polishing pad includes wetting the surface of the polishing pad and delivering a precursor to the wetted surface of the polishing pad surface. The method also includes forming a metal oxide coating having nanoparticles of metal oxide on the surface from the precursor. | 09-11-2014 |
20140323017 | METHODS AND APPARATUS USING ENERGIZED FLUIDS TO CLEAN CHEMICAL MECHANICAL PLANARIZATION POLISHING PADS - Methods adapted to clean a chemical mechanical polishing (CMP) pad are disclosed. The methods include positioning an energized fluid delivery assembly over a CMP polishing pad; rotating the polishing pad on a platen; energizing a fluid within the energized fluid delivery assembly; applying the energized fluid to the polishing pad to dislodge slurry residue and debris; and removing the dislodged slurry residue and debris using a vacuum suction unit. Systems and apparatus for carrying out the methods are provided, as are numerous additional aspects. | 10-30-2014 |
20150040941 | Method and Apparatus for Cleaning A Semiconductor Substrate - A method for cleaning a substrate is provided. The method initiates with disposing a fluid layer having solid components therein to a surface of the substrate. A shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate is then created. The shear force may result from a normal or tangential component of a force applied to a solid body in contact with the fluid layer in one embodiment. The surface of the substrate is rinsed to remove the fluid layer. A cleaning system and apparatus are also provided. | 02-12-2015 |
20150040947 | Method and Systems for Cleaning A Substrate - An apparatus for cleaning a substrate is disclosed. The apparatus having a first head unit and a second head unit. The first head unit is positioned proximate to the surface of the substrate and has a first row of channels defined within configured to supply a foam to the surface of the substrate. The second head unit is positioned substantially adjacent to the first head unit and proximate to the surface of the substrate. A second and a third row of channels are defined within the second head unit. The second row of channels is configured to supply a fluid to the surface of the substrate. The third row of channels is configured to apply a vacuum to the surface of the substrate. | 02-12-2015 |