Patent application number | Description | Published |
20100098852 | ARRANGEMENT AND METHOD FOR REGULATING A GAS STREAM OR THE LIKE - An arrangement for the regulation of a gas stream or the like is provided, which comprises at least one vaporizer crucible for the vaporization of a material or at least one supply container with material vapor. The vaporized material or the material vapor is conducted via a vapor conduit to a substrate. The at least one vaporizer crucible or the at least one supply container is connected via a dosing pipe with the vapor conduit. A tappet projects into the dosing pipe. By means of a regulator the position of the tappet in the dosing pipe is regulated as a function of a measured variable. | 04-22-2010 |
20100098853 | ARRANGEMENT FOR VAPORIZING MATERIALS AND METHOD FOR COATING SUBSTRATES - The invention relates to an arrangement for the vaporization of materials, and specifically of organic materials, such as are utilized for example in the production of OLEDs. A heating element and a device for transporting a carrier for a layer to be vaporized are herein provided. The carrier with the layer to be vaporized is guided over the heating element where the layer is vaporized and deposited on a substrate. | 04-22-2010 |
20100159123 | EVAPORATION SOURCE WITH EXCHANGEABLE NOZZLES - The invention refers to an evaporation source for depositing of thin layers on substrates, the evaporation source comprising a vapor distribution system having an evaporation pipe made of inorganic non metallic material, with the evaporation pipe having at least one nozzle, wherein the nozzle is disposed in a nozzle element which is made as a separate component being arranged in a nozzle element opening of the evaporation pipe. | 06-24-2010 |
20100316788 | DEPOSITION RATE MONITOR DEVICE, EVAPORATOR, COATING INSTALLATION, METHOD FOR APPLYING VAPOR TO A SUBSTRATE AND METHOD OF OPERATING A DEPOSITION RATE MONITOR DEVICE - A deposition rate monitor device for monitoring the deposition rate of a vapor on a substrate is provided, including: a piezoelectric crystal monitor device including a piezoelectric crystal monitor provided in a housing, wherein the housing includes a vapor inlet aperture, and at least one elongated shielding device having a first end and a second end, the first end encompassing the vapor inlet aperture. | 12-16-2010 |
20120152727 | Alkali Metal Deposition System - A deposition system for alkali and alkaline earth metals may include a metal sputter target including cooling channels, a substrate holder configured to hold a substrate facing and parallel to the metal sputter target, and multiple power sources configured to apply energy to a plasma ignited between the substrate and the metal sputter target. The target may have a cover configured to fit over the target material, the cover may include a handle for automated removal and replacement of the cover within the deposition system, and a valve for providing access to the volume between the target material and the cover for pumping, purging or pressurizing the gas within the volume. Sputter gas may include noble gas with an atomic weight less than that of the metal target. | 06-21-2012 |
20140208565 | GAS SEPARATION BY ADJUSTABLE SEPARATION WALL - An apparatus for coating a thin film on a flexible substrate is described. The apparatus includes a coating drum having an outer surface for guiding the flexible substrate through a first vacuum processing region and at least one second vacuum processing region, a gas separation unit for separating the first vacuum processing region and at least one second vacuum processing region and adapted to form a slit through which the flexible substrate can pass between the outer surface of the coating drum and the gas separation unit, wherein the gas separation unit is adapted to control fluid communication between the first processing region and the second processing region by adjusting the position of the gas separation unit. | 07-31-2014 |
20140212599 | DEPOSITION SOURCE WITH ADJUSTABLE ELECTRODE - An apparatus for depositing a thin film on a substrate is described. The apparatus includes a substrate support having an outer surface for guiding the substrate through a vacuum processing region, a plasma deposition source for depositing the thin film on the substrate in the vacuum processing region, wherein the plasma deposition source comprises an electrode, and an actuator configured for adjusting the distance between the electrode and the outer surface. | 07-31-2014 |
20140212600 | COMMON DEPOSITION PLATFORM, PROCESSING STATION, AND METHOD OF OPERATION THEREOF - An apparatus includes a substrate support having an outer surface for guiding the substrate through a first vacuum processing region and at least one second vacuum processing region. First and second deposition sources correspond to the first processing region and at least one second deposition source corresponds to the at least one second vacuum processing region, wherein at least the first deposition source includes an electrode having a surface that opposes the substrate support. A processing gas inlet and a processing gas outlet are arranged at opposing sides of the surface of the electrode. At least one separation gas inlet how one or more openings, wherein the one or more openings are at least provided at one of opposing sides of the electrode surface such that the processing gas inlet and/or the processing gas outlet are provided between the one or more openings and the surface of the electrode. | 07-31-2014 |
20140290861 | DEPOSITION PLATFORM FOR FLEXIBLE SUBSTRATES AND METHOD OF OPERATION THEREOF - An apparatus for processing a flexible substrate is described. The apparatus includes a vacuum chamber having a first chamber portion, a second chamber portion and a third chamber portion, an unwinding shaft, a coating drum having a rotation axis and a curved outer surface for guiding the substrate along the curved outer surface through a first vacuum processing region and at least one second vacuum processing region, wherein a first portion of the coating drum is provided in the second chamber portion and the remaining portion of the coating drum is provided in the third chamber portion, a first processing station corresponding to the first processing region and at least one second processing station corresponding to the at least one second vacuum processing region, wherein the first processing station and the second processing station each includes a flange portion. | 10-02-2014 |
20150020847 | CLEANING METHOD FOR THIN-FILM PROCESSING APPLICATIONS AND APPARATUS FOR USE THEREIN - According to the present disclosure, a method for cleaning the processing chamber of a flexible substrate processing apparatus without breaking the vacuum in the processing chamber is provided. The method for cleaning the processing chamber includes guiding a sacrificial foil into the processing chamber; initiating a first pump process in the processing chamber; plasma cleaning the processing chamber while the sacrificial foil is provided in the processing chamber; initiating a second pump process in the processing chamber; and guiding a flexible substrate into the processing chamber. | 01-22-2015 |