Patent application number | Description | Published |
20080290369 | SEMICONDUCTOR LIGHT-RECEIVING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light-receiving device and its manufacturing method are provided which are capable of suppressing dark current and deterioration. Semiconductor crystals were sequentially grown over an n-type InP substrate, including an n-type InP buffer layer, an undoped GaInAs light absorption layer, an undoped InP diffusion buffer layer, and a p-type InP window layer. Next, a first mesa was formed by removing a part from the p-type InP window layer to the n-type InP buffer layer with a Br-based etchant having low etching selectivity, so as to form a sloped “normal” mesa structure. Next, a second mesa having a smaller diameter than the first mesa was formed by dry etching, by precisely removing a part from the p-type InP window layer to a certain mid position of the undoped InP diffusion buffer layer. | 11-27-2008 |
20080303059 | OPTICAL SEMICONDUCTOR DEVICE - An n-type InGaAs light absorbing layer and an n-type InP layer (first conductivity type semiconductor layer), which is a window layer, and a multiplication layer are multilayered one atop another on an n-type InP substrate. By selectively diffusing impurities and implanting ions, a p-type InP region second conductivity type semiconductor region) is formed on a part of the top surface of the n-type InP layer. The top surfaces of the n-type InP layer and p-type InP region are covered with a surface protection film. A cathode electrode (first electrode) is connected to the underside of the n-type InP substrate. A ring-shaped anode electrode (second electrode) is connected to the top surface of the p-type InP region. A low-voltage electrode surrounds the anode electrode. A voltage lower than that of the cathode electrode is applied to this low-voltage electrode. | 12-11-2008 |
20090218594 | SEMICONDUCTOR LIGHT RECEIVING ELEMENT - A semiconductor photosensitive element comprises: a semiconductor substrate of a first conductivity type; a first light absorption layer, a first semiconductor layer of a second conductivity type, a first semiconductor layer of the first conductivity type, a second light absorption layer, and a second semiconductor layer of a second conductivity type, arranged in this order on the semiconductor substrate; a first electrode connected to the second semiconductor layer of the second conductivity type; a second electrode connected to the semiconductor substrate; and a third electrode electrically connecting the first semiconductor layer of the first conductivity type to the first semiconductor layer of the second conductivity type. The third electrode is located outside a light detection region for detecting optical signals. | 09-03-2009 |
20090218595 | SEMICONDUCTOR LIGHT RECEIVING ELEMENT - A semiconductor light detecting element comprises: a semiconductor substrate having a first major surface and a second major surface opposite each other; a first reflective layer, an absorptive layer, a phase adjusting layer, and a second reflective layer sequentially disposed, from the semiconductor substrate, on the first major surface of the semiconductor substrate; and an anti-reflection film on the second major surface of the semiconductor substrate, The first reflective layer is a multilayer reflective layer including laminated semiconductor layers having different refractive indices; the absorptive layer has a band gap energy smaller than band gap energy of the semiconductor substrate; the phase adjusting layer has a band gap energy larger than the band gap energy of the absorptive layer; and the first reflective layer contacts the absorptive layers without intervention of other layers. | 09-03-2009 |
20090243013 | SEMICONDUCTOR PHOTORECEPTOR DEVICE - A semiconductor light detecting device includes an n-contact layer selectively disposed on an Fe—InP substrate. An optical waveguide layer is disposed on the n-contact layer and includes an n-cladding layer, a light absorption layer, and a p-cladding layer, laminated on one another over the n-contact layer, in that order. An Fe—InP current blocking layer is disposed on the n-cladding layer such that sides of the optical waveguide layer are buried in the Fe—InP current blocking layer. A p-electrode includes a contact electrode electrically connected to the p-cladding layer of the optical waveguide layer, a lead-out electrode portion extending on a side wall of the current blocking layer from the contact electrode and extending on the Fe—InP substrate, and an electrode pad disposed on a surface of the Fe—InP substrates with an SiN film between the electrode pad and the surface of the Fe—InP substrate and connected to the lead-out electrode portion. | 10-01-2009 |
20090289316 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device comprises a distributed Bragg reflector layer of a first conductivity type, an optical absorption layer, and a semiconductor layer of a second conductivity type, sequentially formed on a semiconductor substrate; wherein said Bragg reflection layer of the first conductivity type has first semiconductor layers having a band gap wavelength larger than the wavelength of incident light, and second semiconductor layers having a band gap wavelength smaller than the wavelength of incident light; and an optical layer thickness of each of said first semiconductor layers is larger than the optical layer thickness of each of said second semiconductor layers. | 11-26-2009 |
20090294787 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes a distributed Bragg reflection layer of a first conductivity type, a distortion elaxation layer of the first conductivity type, a light absorbing layer, and a semiconductor layer of a second conductivity type, sequentially arranged on a semiconductor substrate. The distortion relaxation layer the same material as the semiconductor substrate. The total optical length of layers between the distributed Bragg reflection layer and the light absorbing layer is an integer multiple of one-half the wavelength of incident light that is detected. | 12-03-2009 |
20100006967 | SEMICONDUCTOR PHOTODETECTOR - A semiconductor photodetector comprises: a semiconductor substrate; a first multilayer reflective layer on a first surface of the semiconductor substrate and including semiconductor layers; a first optically-resonant layer on the first multilayer reflective layer; a second multilayer reflective layer on the first optically-resonant layer and including semiconductor layers; a light absorbing layer on the second multilayer reflective layer; a reflective film on the light absorbing layer; and an antireflective film on a second surface of the semiconductor substrate. The first optically-resonant layer has a larger thickness than the semiconductor layers of the first and second multilayer reflective layers. The combined optical thickness of the layers between the second multilayer reflective layer and the reflective film is not equal to the optical thickness of the first optically-resonant layer. | 01-14-2010 |
20100133637 | AVALANCHE PHOTODIODE - An avalanche photodiode comprises: a substrate; a semiconductor layer of a first conductivity type on the substrate; and an avalanche multiplication layer, a light absorption layer, and a window layer which are sequentially formed on the semiconductor layer, wherein apart of the window layer is a region of a second conductivity type, and the light absorption layer includes a first light absorption layer, and a second light absorption layer which has higher electric conductivity than electric conductivity of the first light absorption layer. | 06-03-2010 |
20100148216 | SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT RECEIVING ELEMENT - A semiconductor light detecting element having a mesa structure comprises: a first semiconductor layer having n-type conductivity located on a semiconductor substrate, a light absorbing layer located on the first semiconductor layer, and a second semiconductor layer located on the light absorbing layer; a burying layer burying peripheries of the light absorbing layer and the second semiconductor layer. The burying layer has a band gap larger than the band gap of the light absorbing layer. The second semiconductor layer has a first region having p-type conductivity, and a second region having i-type or n-type conductivity and located between the first region and the burying layer. | 06-17-2010 |
20110305255 | SEMICONDUCTOR OPTICAL INTEGRATED ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor optical integrated element includes: a substrate; and a laser diode and a modulator which are integrated on the substrate. The laser diode includes an embedded waveguide having a core layer, both sides of which are embedded in a semiconductor material. The modulator includes a high-mesa ridge waveguide having a core layer, neither side of which is embedded in the semiconductor material. The core layers in the laser diode and the modulator are stripe-shaped. | 12-15-2011 |
20120087614 | OPTICAL MODULATOR - An optical modulator includes: a semiconductor chip; a waveguide in the semiconductor chip; a traveling wave electrode including an input portion and an output portion, to which a signal is applied for modulating light passing through the waveguide; a power supply line connected to the input portion via a first wire; and a termination resistor connected to the output portion via a second wire. Capacitance between the output portion and a grounding point is larger than capacitance between the input portion and the grounding point. | 04-12-2012 |
20130207160 | SEMICONDUCTOR LIGHT DETECTING ELEMENT - A semiconductor light detecting element includes: an InP substrate; and a semiconductor stacked structure on the InP substrate and including at least a light absorbing layer, wherein the light absorbing layer includes an InGaAsBi layer lattice-matched to the InP substrate. | 08-15-2013 |
20130208350 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; an optical amplifying section amplifying output light of the wave coupling section; a first optical waveguide optically connecting respective semiconductor lasers to the wave coupling section; a second optical waveguide optically connecting the wave coupling section to the optical amplifying section; a third optical waveguide optically connected to an output of the optical amplifying section; and a phase regulator located in at least one of the first, second, and third optical waveguides, and regulating phase of reflected light that is reflected at a reflecting point in the optical semiconductor device and that returns to the semiconductor lasers. The phase regulator adjusts the phase of the reflected light to decrease line width of the light output by the semiconductor lasers. | 08-15-2013 |
20130299936 | AVALANCHE PHOTODIODE AND METHOD FOR MANUFACTURING THE SAME - An avalanche photodiode includes a substrate; an avalanche multiplying layer, a p-type electric field controlling layer, a light-absorbing layer, and a window layer sequentially laminated on the substrate. A p-type region is present in parts of the window layer and the light-absorbing layer. Carbon is the dopant of the electric field controlling layer. Zn is the dopant of the p-type region. A bottom face of the p-type region is closer to the substrate than is an interface between the light-absorbing layer and the window layer. | 11-14-2013 |
20140198378 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a phase regulator regulating phase of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the semiconductor lasers; a second optical waveguide optically connecting the wave coupling section to the phase regulator; an optical amplifying section amplifying output light of the phase regulator; and a third optical waveguide optically connecting an output of the phase regulator to the optical amplifying section. The phase regulator adjusts the phase of reflected light that returns to the semiconductor lasers to decrease line width of the light output by the semiconductor lasers. | 07-17-2014 |
20150063740 | WAVELENGTH VARIABLE LIGHT SOURCE AND WAVELENGTH VARIABLE LIGHT SOURCE MODULE - A wavelength variable light source according to the present invention includes: an MMI that includes an input side and an output side, the input side connecting to one end of each of a plurality of MMI input waveguides, and the output side connecting to a plurality of MMI output waveguides, the MMI multiplexing light input from each of the MMI input waveguides and outputting the multiplexed light to each of the MMI output waveguides; a plurality of DFB-LDs connected to the other end of each of the MMI input waveguides, each of the MMI output waveguides performing a single mode oscillation at a different wavelength; and two SOAs respectively connected to two MMI output waveguides of the MMI output waveguides, and having different gains from each other. | 03-05-2015 |