Patent application number | Description | Published |
20130087835 | METHOD AND SYSTEM FOR FLOATING GUARD RINGS IN GAN MATERIALS - A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure further includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, a first metallic structure electrically coupled to the second surface of the III-nitride substrate, and a III-nitride epitaxial structure of a second conductivity type coupled to the III-nitride epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure. | 04-11-2013 |
20130087879 | SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS - A semiconductor structure includes a III-nitride substrate characterized by a first conductivity type and having a first side and a second side opposing the first side, a III-nitride epitaxial layer of the first conductivity type coupled to the first side of the III-nitride substrate, and a plurality of III-nitride epitaxial structures of a second conductivity type coupled to the III-nitride epitaxial layer. The semiconductor structure further includes a III-nitride epitaxial formation of the first conductivity type coupled to the plurality of III-nitride epitaxial structures, and a metallic structure forming a Schottky contact with the III-nitride epitaxial formation and coupled to at least one of the plurality of III-nitride epitaxial structures. | 04-11-2013 |
20130143392 | IN-SITU SIN GROWTH TO ENABLE SCHOTTKY CONTACT FOR GAN DEVICES - A method of fabricating a diode in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface and forming a n-type GaN drift layer coupled to the first surface of the n-type GaN substrate. The method also includes forming an in-situ Si | 06-06-2013 |
20130146885 | Vertical GaN-Based Metal Insulator Semiconductor FET - A semiconductor structure includes a III-nitride substrate having a top surface and an opposing bottom surface and a first III-nitride layer of a first conductivity type coupled to the top surface of the III-nitride substrate. The semiconductor structure also includes a second III-nitride layer of a second conductivity type coupled to the first III-nitride layer along a vertical direction and a third III-nitride layer of a third conductivity type coupled to the second III-nitride layer along the vertical direction. The semiconductor structure further includes a first trench extending through a portion of the third III-nitride layer to the first III-nitride layer, a second trench extending through another portion of the third III-nitride layer to the second III-nitride layer, and a first metal layer coupled to the second and the third III-nitride layers. | 06-13-2013 |
20130153917 | INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES - A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region. The source includes a GaN-layer coupled to an InGaN layer. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction. | 06-20-2013 |
20130161634 | METHOD AND SYSTEM FOR FABRICATING EDGE TERMINATION STRUCTURES IN GAN MATERIALS - A method for fabricating an edge termination, which can be used in conjunction with GaN-based materials, includes providing a substrate of a first conductivity type. The substrate has a first surface and a second surface. The method also includes forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate and forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type. The second GaN epitaxial layer is coupled to the first GaN epitaxial layer. The substrate, the first GaN epitaxial layer and the second GaN epitaxial layer can be referred to as an epitaxial structure. | 06-27-2013 |
20130164893 | FABRICATION OF FLOATING GUARD RINGS USING SELECTIVE REGROWTH - A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface, forming an n-type GaN epitaxial layer coupled to the first surface of the n-type GaN substrate, and forming a growth mask coupled to the n-type GaN epitaxial layer. The method further includes patterning the growth mask to expose at least a portion of the n-type GaN epitaxial layer, and forming at least one p-type GaN epitaxial structure coupled to the at least a portion of the n-type GaN epitaxial layer. The at least one p-type GaN epitaxial structure comprises at least one portion of an edge termination structure. The method additionally includes forming a first metal structure electrically coupled to the second surface of the n-type GaN substrate. | 06-27-2013 |
20140048903 | METHOD AND SYSTEM FOR EDGE TERMINATION IN GAN MATERIALS BY SELECTIVE AREA IMPLANTATION DOPING - A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing an n-type GaN substrate having a first surface and a second surface, forming an n-type GaN epitaxial layer coupled to the first surface of the n-type GaN substrate, and forming one or more p-type regions in the n-type GaN epitaxial layer by using a first ion implantation. At least one of the one or more p-type regions includes an edge termination structure. | 02-20-2014 |
20140131721 | LATERAL GAN JFET WITH VERTICAL DRIFT REGION - A gallium nitride (GaN)-based junction field-effect transistor (JFET) can include a GaN drain region having a top surface extending in a lateral dimension, a source region, and a GaN channel region of a first conductivity type coupled between the source region and the GaN drain region and operable to conduct electrical current between the source region and the GaN drain region. The JFET can also include a blocking layer disposed between the source region and the GaN drain region such that the GaN channel region is operable to conduct the electrical current substantially along the lateral dimension in a laterally-conductive region of the GaN channel region, and a GaN gate region of a second conductivity type coupled to the GaN channel region such that the laterally-conductive region of the GaN channel region is disposed between at least a portion of the blocking layer and the GaN gate region. | 05-15-2014 |
20140131837 | GAN VERTICAL BIPOLAR TRANSISTOR - An embodiment of a semiconductor device includes a III-nitride base structure of a first conductivity type, and a III-nitride emitter structure of a second conductivity type having a first surface and a second surface. The second surface is substantially opposite the first surface. The first surface of the III-nitride emitter structure is coupled to a surface of the III-nitride base structure. The semiconductor also includes a first dielectric layer coupled to the second surface of the III-nitride emitter structure, and a spacer coupled to a sidewall of the III-nitride emitter structure and the surface of the III-nitride base structure. The semiconductor also includes a base contact structure with a III-nitride material coupled to the spacer, the surface of the III-nitride base structure, and the first dielectric layer, such that the first dielectric layer and the spacer are disposed between the base contact structure and the III-nitride emitter structure. | 05-15-2014 |
Patent application number | Description | Published |
20120309172 | Epitaxial Lift-Off and Wafer Reuse - A method of reusing a III-nitride growth substrate according to embodiments of the invention includes epitaxially growing a III-nitride semiconductor structure on a III-nitride substrate. The III-nitride semiconductor structure includes a sacrificial layer and an additional layer grown over the sacrificial layer. The sacrificial layer is implanted with at least one implant species. The III-nitride substrate is separated from the additional layer at the implanted sacrificial layer. In some embodiments the III-nitride substrate is GaN and the sacrificial layer is GaN, an aluminum-containing III-nitride layer, or an indium-containing III-nitride layer. In some embodiments, the III-nitride substrate is separated from the additional layer by etching the implanted sacrificial layer. | 12-06-2012 |
20130015552 | Electrical Isolation Of High Defect Density Regions In A Semiconductor DeviceAANM Kizilyalli; Isik C.AACI San FranciscoAAST CAAACO USAAGP Kizilyalli; Isik C. San Francisco CA USAANM Bour; David P.AACI CupertinoAAST CAAACO USAAGP Bour; David P. Cupertino CA USAANM Brown; Richard J.AACI Los GatosAAST CAAACO USAAGP Brown; Richard J. Los Gatos CA USAANM Edwards; Andrew P.AACI San JoseAAST CAAACO USAAGP Edwards; Andrew P. San Jose CA USAANM Nie; HuiAACI CupertinoAAST CAAACO USAAGP Nie; Hui Cupertino CA USAANM Romano; Linda T.AACI SunnyvaleAAST CAAACO USAAGP Romano; Linda T. Sunnyvale CA US - Embodiments of the invention include a III-nitride semiconductor layer including a first portion having a first defect density and a second portion having a second defect density. The first defect density is greater than the second defect density. An insulating material is disposed over the first portion. The insulating material is not formed on or is removed from the second portion. | 01-17-2013 |
20130032811 | METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN GATE - A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction. | 02-07-2013 |
20130032812 | METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN CHANNEL - A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, a gate region at least partially surrounding the channel region, having a first surface coupled to the drift region and a second surface on a side of the gate region opposing the first surface, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction, and the channel region extends along at least a portion of the second surface of the gate region. | 02-07-2013 |
20130032813 | METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES - A method of growing a III-nitride-based epitaxial structure includes providing a substrate in an epitaxial growth reactor and heating the substrate to a predetermined temperature. The method also includes flowing a gallium-containing gas into the epitaxial growth reactor and flowing a nitrogen-containing gas into the epitaxial growth reactor. The method further includes flowing a gettering gas into the epitaxial growth reactor. The predetermined temperature is greater than 1000° C. | 02-07-2013 |
20130032814 | METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS - A semiconductor device includes a III-nitride substrate having a first conductivity type and a first electrode electrically coupled to the III-nitride substrate. The semiconductor device also includes a III-nitride material having a second conductivity type coupled to the III-nitride substrate at a regrowth interface and a p-n junction disposed between the III-nitride substrate and the regrowth interface. | 02-07-2013 |
20130056743 | METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NITRIDE BASED ELECTRONICS - A diode includes a substrate characterized by a first dislocation density and a first conductivity type, a first contact coupled to the substrate, and a masking layer having a predetermined thickness and coupled to the semiconductor substrate. The masking layer comprises a plurality of continuous sections and a plurality of openings exposing the substrate and disposed between the continuous sections. The diode also includes an epitaxial layer greater than 5 μm thick coupled to the substrate and the masking layer. The epitaxial layer comprises a first set of regions overlying the plurality of openings and characterized by a second dislocation density and a second set of regions overlying the set of continuous sections and characterized by a third dislocation density less than the first dislocation density and the second dislocation density. The diode further includes a second contact coupled to the epitaxial layer. | 03-07-2013 |
20130075748 | METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE BASED DEVICES - A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed regions of the III-nitride substrate. The method also includes heating the III-nitride substrate to a predetermined temperature and placing a dual-precursor gas adjacent the exposed regions of the III-nitride substrate. The dual-precursor gas includes a nitrogen source and a dopant source. The method further includes maintaining the predetermined temperature for a predetermined time period, forming p-type III-nitride regions adjacent the exposed regions of the III-nitride substrate, and removing the masking layer. | 03-28-2013 |
20130087803 | MONOLITHICALLY INTEGRATED HEMT AND SCHOTTKY DIODE - An integrated device including a III-nitride HEMT and a Schottky diode includes a substrate comprising a first III-nitride material and a drift region comprising a second III-nitride material coupled to the substrate and disposed adjacent to the substrate along a vertical direction. The integrated device also includes a first barrier layer coupled to the drift region and a channel layer comprising a third III-nitride material having a first bandgap and coupled to the barrier layer. The integrated device further includes a second barrier layer characterized by a second bandgap and coupled to the channel layer and a Schottky contact coupled to the drift region. The second bandgap is greater than the first bandgap. | 04-11-2013 |
20130087878 | METHOD OF FABRICATING A GAN MERGED P-I-N SCHOTTKY (MPS) DIODE - A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial structure including a first III-nitride epitaxial layer coupled to the first side of the III-nitride substrate and a plurality of III-nitride regions of a second conductivity type. The plurality of III-nitride regions have at least one III-nitride epitaxial region of the first conductivity type between each of the plurality of III-nitride regions. The semiconductor structure further includes a first metallic structure electrically coupled to one or more of the plurality of III-nitride regions and the at least one III-nitride epitaxial region. A Schottky contact is created between the first metallic structure and the at least one III-nitride epitaxial region. | 04-11-2013 |
20130112985 | MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE - An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, and a channel region comprising a third III-nitride material coupled to the drift region. The integrated device also includes a gate region at least partially surrounding the channel region, a source coupled to the channel region, and a Schottky contact coupled to the drift region. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride FET and the Schottky diode is along the vertical direction. | 05-09-2013 |
20130126884 | ALUMINUM GALLIUM NITRIDE ETCH STOP LAYER FOR GALLIUM NITRIDE BASES DEVICES - A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, and a first metallic structure electrically coupled to the second surface of the III-nitride substrate. The semiconductor structure further includes an AlGaN epitaxial layer coupled to the III-nitride epitaxial layer of the first conductivity type, and a III-nitride epitaxial structure of a second conductivity type coupled to the AlGaN epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure. | 05-23-2013 |
20130126885 | METHOD AND SYSTEM FOR FABRICATING FLOATING GUARD RINGS IN GAN MATERIALS - A method for fabricating an edge termination structure includes providing a substrate having a first surface and a second surface and a first conductivity type, forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate, and forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type. The second GaN epitaxial layer is coupled to the first GaN epitaxial layer. The method also includes implanting ions into a first region of the second GaN epitaxial layer to electrically isolate a second region of the second GaN epitaxial layer from a third region of the second GaN epitaxial layer. The method further includes forming an active device coupled to the second region of the second GaN epitaxial layer and forming the edge termination structure coupled to the third region of the second GaN epitaxial layer. | 05-23-2013 |
20130126886 | GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER - A method of fabricating a Schottky diode using gallium nitride (GaN) materials includes providing an n-type GaN substrate having a first surface and a second surface. The second surface opposes the first surface. The method also includes forming an ohmic metal contact electrically coupled to the first surface of the n-type GaN substrate and forming an n-type GaN epitaxial layer coupled to the second surface of the n-type GaN substrate. The method further includes forming an n-type aluminum gallium nitride (AlGaN) surface layer coupled to the n-type GaN epitaxial layer and forming a Schottky contact electrically coupled to the n-type AlGaN surface layer. | 05-23-2013 |
20130126888 | Edge Termination by Ion Implantation in GaN - An edge terminated semiconductor device is described including a GaN substrate; a doped GaN epitaxial layer grown on the GaN substrate including an ion-implanted insulation region, wherein the ion-implanted region has a resistivity that is at least 90% of maximum resistivity and a conductive layer, such as a Schottky metal layer, disposed over the GaN epitaxial layer, wherein the conductive layer overlaps a portion of the ion-implanted region. A Schottky diode is prepared using the Schottky contact structure. | 05-23-2013 |
20130127006 | GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE - A method for fabricating a III-nitride semiconductor device includes providing a III-nitride substrate having a first surface and a second surface opposing the first surface, forming a III-nitride epitaxial layer coupled to the first surface of the III-nitride substrate, and removing at least a portion of the III-nitride epitaxial layer to form a first exposed surface. The method further includes forming a dielectric layer coupled to the first exposed surface, removing at least a portion of the dielectric layer, and forming a metallic layer coupled to a remaining portion of the dielectric layer such that the remaining portion of the dielectric layer is disposed between the III-nitride epitaxial layer and the metallic layer. | 05-23-2013 |
20130161633 | METHOD AND SYSTEM FOR JUNCTION TERMINATION IN GAN MATERIALS USING CONDUCTIVITY MODULATION - A semiconductor structure includes a GaN substrate having a first surface and a second surface opposing the first surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a first GaN epitaxial layer of the first conductivity type coupled to the second surface of the GaN substrate and a second GaN epitaxial layer of a second conductivity type coupled to the first GaN epitaxial layer. The second GaN epitaxial layer includes an active device region, a first junction termination region characterized by an implantation region having a first implantation profile, and a second junction termination region characterized by an implantation region having a second implantation profile. | 06-27-2013 |
20130161635 | METHOD AND SYSTEM FOR A GAN SELF-ALIGNED VERTICAL MESFET - A semiconductor structure includes a III-nitride substrate and a drift region coupled to the III-nitride substrate along a growth direction. The semiconductor substrate also includes a channel region coupled to the drift region. The channel region is defined by a channel sidewall disposed substantially along the growth direction. The semiconductor substrate further includes a gate region disposed laterally with respect to the channel region. | 06-27-2013 |
20130161780 | METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION - A III-nitride semiconductor device includes an active region for supporting current flow during forward-biased operation of the III-nitride semiconductor device. The active region includes a first III-nitride epitaxial material having a first conductivity type, and a second III-nitride epitaxial material having a second conductivity type. The III-nitride semiconductor device further includes an edge-termination region physically adjacent to the active region and including an implanted region comprising a portion of the first III-nitride epitaxial material. The implanted region of the first III-nitride epitaxial material has a reduced electrical conductivity in relation to portions of the first III-nitride epitaxial material adjacent to the implanted region | 06-27-2013 |
20130341677 | GAN VERTICAL SUPERJUNCTION DEVICE STRUCTURES AND FABRICATION METHODS - A semiconductor device includes a III-nitride substrate of a first conductivity type, a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, and a first III-nitride epitaxial structure coupled to a first portion of a surface of the first III-nitride epitaxial layer. The first III-nitride epitaxial structure has a sidewall. The semiconductor device further includes a second III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial structure, a second III-nitride epitaxial layer of the first conductivity type coupled to the sidewall of the second III-nitride epitaxial layer and a second portion of the surface of the first III-nitride epitaxial layer, and a third III-nitride epitaxial layer of a second conductivity type coupled to the second III-nitride epitaxial layer. The semiconductor device also includes one or more dielectric structures coupled to a surface of the third III-nitride epitaxial layer. | 12-26-2013 |
20140051236 | GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE - A method for fabricating a III-nitride semiconductor device includes providing a III-nitride substrate having a first surface and a second surface opposing the first surface, forming a III-nitride epitaxial layer coupled to the first surface of the III-nitride substrate, and removing at least a portion of the III-nitride epitaxial layer to form a first exposed surface. The method further includes forming a dielectric layer coupled to the first exposed surface, removing at least a portion of the dielectric layer, and forming a metallic layer coupled to a remaining portion of the dielectric layer such that the remaining portion of the dielectric layer is disposed between the III-nitride epitaxial layer and the metallic layer. | 02-20-2014 |
20140145201 | METHOD AND SYSTEM FOR GALLIUM NITRIDE VERTICAL JFET WITH SEPARATED GATE AND SOURCE - A semiconductor structure includes a III-nitride substrate and a first III-nitride epitaxial layer of a first conductivity type coupled to the III-nitride substrate. The semiconductor structure also includes a first III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial layer and a second III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial structure. The semiconductor structure further includes a second III-nitride epitaxial layer coupled to the first III-nitride epitaxial structure. The second III-nitride epitaxial layer is of a second conductivity type and is not electrically connected to the second III-nitride epitaxial structure. | 05-29-2014 |
20140159051 | MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE - An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, and a channel region comprising a third III-nitride material coupled to the drift region. The integrated device also includes a gate region at least partially surrounding the channel region, a source coupled to the channel region, and a Schottky contact coupled to the drift region. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride FET and the Schottky diode is along the vertical direction. | 06-12-2014 |
20140162416 | ALUMINUM GALLIUM NITRIDE ETCH STOP LAYER FOR GALLIUM NITRIDE BASED DEVICES - A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, and a first metallic structure electrically coupled to the second surface of the III-nitride substrate. The semiconductor structure further includes an AlGaN epitaxial layer coupled to the III-nitride epitaxial layer of the first conductivity type, and a III-nitride epitaxial structure of a second conductivity type coupled to the AlGaN epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure. | 06-12-2014 |
20140191241 | GALLIUM NITRIDE VERTICAL JFET WITH HEXAGONAL CELL STRUCTURE - An array of GaN-based vertical JFETs includes a GaN substrate comprising a drain of one or more of the JFETs and one or more epitaxial layers coupled to the GaN substrate. The array also includes a plurality of hexagonal cells coupled to the one or more epitaxial layers and extending in a direction normal to the GaN substrate. Sidewalls of the plurality of hexagonal cells are substantially aligned with respect to crystal planes of the GaN substrate. The array further includes a plurality of channel regions, each having a portion adjacent a sidewall of the plurality of hexagonal cells, a plurality of gate regions of one or more of the JFETs, each electrically coupled to one or more of the plurality of channel regions, and a plurality of source regions of one or more of the JFETs electrically coupled to one or more of the plurality of channel regions. | 07-10-2014 |
20140191242 | METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR - A vertical JFET includes a GaN substrate comprising a drain of the JFET and a plurality of patterned epitaxial layers coupled to the GaN substrate. A distal epitaxial layer comprises a first part of a source channel and adjacent patterned epitaxial layers are separated by a gap having a predetermined distance. The vertical JFET also includes a plurality of regrown epitaxial layers coupled to the distal epitaxial layer and disposed in at least a portion of the gap. A proximal regrown epitaxial layer comprises a second part of the source channel. The vertical JFET further includes a source contact passing through portions of a distal regrown epitaxial layer and in electrical contact with the source channel, a gate contact in electrical contact with a distal regrown epitaxial layer, and a drain contact in electrical contact with the GaN substrate. | 07-10-2014 |
20140206179 | METHOD AND SYSTEM FOR JUNCTION TERMINATION IN GAN MATERIALS USING CONDUCTIVITY MODULATION - A semiconductor structure includes a GaN substrate having a first surface and a second surface opposing the first surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a first GaN epitaxial layer of the first conductivity type coupled to the second surface of the GaN substrate and a second GaN epitaxial layer of a second conductivity type coupled to the first GaN epitaxial layer. The second GaN epitaxial layer includes an active device region, a first junction termination region characterized by an implantation region having a first implantation profile, and a second junction termination region characterized by an implantation region having a second implantation profile. | 07-24-2014 |
20140235030 | METHOD AND SYSTEM FOR FABRICATING FLOATING GUARD RINGS IN GAN MATERIALS - A method for fabricating an edge termination structure includes providing a substrate having a first surface and a second surface and a first conductivity type, forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate, and forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type. The second GaN epitaxial layer is coupled to the first GaN epitaxial layer. The method also includes implanting ions into a first region of the second GaN epitaxial layer to electrically isolate a second region of the second GaN epitaxial layer from a third region of the second GaN epitaxial layer. The method further includes forming an active device coupled to the second region of the second GaN epitaxial layer and forming the edge termination structure coupled to the third region of the second GaN epitaxial layer. | 08-21-2014 |
20140287570 | METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS) DIODE - A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial structure including a first III-nitride epitaxial layer coupled to the first side of the III-nitride substrate and a plurality of III-nitride regions of a second conductivity type. The plurality of III-nitride regions have at least one III-nitride epitaxial region of the first conductivity type between each of the plurality of III-nitride regions. The semiconductor structure further includes a first metallic structure electrically coupled to one or more of the plurality of III-nitride regions and the at least one III-nitride epitaxial region. A Schottky contact is created between the first metallic structure and the at least one III-nitride epitaxial region. | 09-25-2014 |
20140295652 | GAN VERTICAL SUPERJUNCTION DEVICE STRUCTURES AND FABRICATION METHODS - A semiconductor device includes a III-nitride substrate of a first conductivity type, a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, and a first III-nitride epitaxial structure coupled to a first portion of a surface of the first III-nitride epitaxial layer. The first III-nitride epitaxial structure has a sidewall. The semiconductor device further includes a second III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial structure, a second III-nitride epitaxial layer of the first conductivity type coupled to the sidewall of the second III-nitride epitaxial layer and a second portion of the surface of the first III-nitride epitaxial layer, and a third III-nitride epitaxial layer of a second conductivity type coupled to the second III-nitride epitaxial layer. The semiconductor device also includes one or more dielectric structures coupled to a surface of the third III-nitride epitaxial layer. | 10-02-2014 |
20140346527 | Method of fabricating a gallium nitride p-i-n diode using implantation - A III-nitride semiconductor device includes an active region for supporting current flow during forward-biased operation of the III-nitride semiconductor device. The active region includes a first III-nitride epitaxial material having a first conductivity type, and a second III-nitride epitaxial material having a second conductivity type. The III-nitride semiconductor device further includes an edge-termination region physically adjacent to the active region and including an implanted region comprising a portion of the first III-nitride epitaxial material. The implanted region of the first III-nitride epitaxial material has a reduced electrical conductivity in relation to portions of the first III-nitride epitaxial material adjacent to the implanted region | 11-27-2014 |
20140374769 | GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER - A Schottky diode and method of fabricating the Schottky diode using gallium nitride (GaN) materials is disclosed. The method includes providing an n-type GaN substrate having first and second opposing surfaces. The method also includes forming an ohmic metal contact electrically coupled to the first surface, forming an n-type GaN epitaxial layer coupled to the second surface, and forming an n-type aluminum gallium nitride (AlGaN) surface layer coupled to the n-type GaN epitaxial layer. The AlGaN surface layer has a thickness which is less than a critical thickness, and the critical thickness is determined based on an aluminum mole fraction of the AlGaN surface layer. The method also includes forming a Schottky contact electrically coupled to the n-type AlGaN surface layer, where, during operation, an interface between the n-type GaN epitaxial layer and the n-type AlGaN surface layer is substantially free from a two-dimensional electron gas. | 12-25-2014 |
20150017792 | METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE BASED DEVICES - A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed regions of the III-nitride substrate. The method also includes heating the III-nitride substrate to a predetermined temperature and placing a dual-precursor gas adjacent the exposed regions of the III-nitride substrate. The dual-precursor gas includes a nitrogen source and a dopant source. The method further includes maintaining the predetermined temperature for a predetermined time period, forming p-type III-nitride regions adjacent the exposed regions of the III-nitride substrate, and removing the masking layer. | 01-15-2015 |
Patent application number | Description | Published |
20120086034 | SOLID-STATE LIGHT EMITTING DEVICES AND SIGNAGE WITH PHOTOLUMINESCENCE WAVELENGTH CONVERSION - A solid-state light emitting device having a solid-state light emitter (LED) operable to generate excitation light and a wavelength conversion component including a mixture of particles of a photoluminescence material and particles of a light reflective material. In operation the phosphor absorbs at least a portion of the excitation light and emits light of a different color. The emission product of the device comprises the combined light generated by the LED and the phosphor. The wavelength conversion component can be light transmissive and comprise a light transmissive substrate on which the mixture of phosphor and reflective materials is provided as a layer or homogeneously distributed throughout the volume of the substrate. Alternatively the wavelength conversion component can be light reflective with the mixture of phosphor and light reflective materials being provided as a layer on the light reflective surface. | 04-12-2012 |
20120087103 | WAVELENGTH CONVERSION COMPONENT WITH A DIFFUSING LAYER - A light emitting device comprises at least one solid-state light source (LED) operable to generate excitation light and a wavelength conversion component located remotely to the at least one source and operable to convert at least a portion of the excitation light to light of a different wavelength. The wavelength conversion component includes a light transmissive substrate having a wavelength conversion layer comprising particles of at least one photoluminescence material and a light diffusing layer comprising particles of a light diffractive material. This approach of using the light diffusing layer in combination with the wavelength conversion layer solves the problem of variations or non-uniformities in the color of emitted light with emission angle. | 04-12-2012 |
20120087104 | WAVELENGTH CONVERSION COMPONENT WITH SCATTERING PARTICLES - A light emitting device comprises at least one solid-state light source (LED) operable to generate excitation light and a wavelength conversion component located remotely to the at least one source and operable to convert at least a portion of the excitation light to light of a different wavelength. The wavelength conversion component comprises a light transmissive substrate having a wavelength conversion layer comprising particles of at least one photoluminescence material and a light diffusing layer comprising particles of a light diffractive material. This approach of using the light diffusing layer in combination with the wavelength conversion layer solves the problem of variations or non-uniformities in the color of emitted light with emission angle. In addition, the color appearance of the lighting apparatus in its OFF state can be improved by implementing the light diffusing layer in combination with the wavelength conversion layer. Moreover, significant reductions can be achieved in the amount phosphor materials required to implement phosphor-based LED devices. | 04-12-2012 |
20120087105 | WAVELENGTH CONVERSION COMPONENT - A light emitting device comprises at least one solid-state light source (LED) operable to generate excitation light and a wavelength conversion component located remotely to the at least one source and operable to convert at least a portion of the excitation light to light of a different wavelength. The wavelength conversion component comprises a light transmissive substrate having a wavelength conversion layer comprising particles of at least one photoluminescence material and a light diffusing layer comprising particles of a light diffractive material. This approach of using the light diffusing layer in combination with the wavelength conversion layer solves the problem of variations or non-uniformities in the color of emitted light with emission angle. In addition, the color appearance of the lighting apparatus in its OFF state can be improved by implementing the light diffusing layer in combination with the wavelength conversion layer. Moreover, significant reductions can be achieved in the amount phosphor materials required to implement phosphor-based LED devices. | 04-12-2012 |
20120138874 | SOLID-STATE LIGHT EMITTING DEVICES AND SIGNAGE WITH PHOTOLUMINESCENCE WAVELENGTH CONVERSION AND PHOTOLUMINESCENT COMPOSITIONS THEREFOR - A photoluminescent composition (“phosphor ink”) comprises a suspension of particles of at least one blue light (380 nm to 480 nm) excitable phosphor material in a light transmissive liquid binder in which the weight loading of at least one phosphor material to binder material is in a range 40% to 75%. The binder can be U.V. curable, thermally curable, solvent based or a combination thereof and comprise a polymer resin; a monomer resin, an acrylic, a silicone or a fluorinated polymer. The composition can further comprise particles of a light reflective material suspended in the liquid binder. Photoluminescence wavelength conversion components; solid-state light emitting devices; light emitting signage surfaces and light emitting signage utilizing the composition are disclosed. | 06-07-2012 |
20120140435 | LIGHT EMITTING DEVICE UTILIZING REMOTE WAVELENGTH CONVERSION WITH IMPROVED COLOR CHARACTERISTICS - A light emitting device includes a radiation source operable to generate and radiate excitation energy, the source being configured to irradiate a wavelength conversion component with excitation energy and the wavelength conversion component comprising a layer of photo-luminescent material configured to emit radiation of a selected color when irradiated by the radiation source and a color enhancement filter layer configured to filter undesirable wavelengths of an emission product of the layer of photo-luminescent material to establish a final emission product for the light emitting device. | 06-07-2012 |
20120153311 | LOW-COST SOLID-STATE BASED LIGHT EMITTING DEVICES WITH PHOTOLUMINESCENT WAVELENGTH CONVERSION AND THEIR METHOD OF MANUFACTURE - A method of manufacturing a light emitting device comprises: mounting and electrically connecting a plurality of solid-state light emitters onto a substrate in a known configuration; screen printing a pattern of at least one photo luminescent material onto a surface of a light transmissive carrier such that there is a respective region of photo luminescent material corresponding to a respective one of the light emitters and mounting the carrier to the substrate such that each region of photo luminescent material overlays a respective one of the light emitters. Where the light transmissive carrier comprises a thermo formable material the method can further comprise heating and vacuum molding the carrier such as to form an array of hollow features configured such that a respective feature corresponds to a respective light emitter and is capable of housing a respective light emitter. | 06-21-2012 |
20130088848 | SOLID-STATE LAMPS WITH IMPROVED RADIAL EMISSION AND THERMAL PERFORMANCE - A solid-state lamp comprises: one or more solid-state light emitting devices (typically LEDs); a thermally conductive body; at least one duct; and a photoluminescence wavelength conversion component remote to the one or more LEDs. The lamp is configured such that the duct extends through the photoluminescence wavelength conversion component and defines a pathway for thermal airflow through the thermally conductive body to thereby provide cooling of the body and the one or more LEDs. | 04-11-2013 |
20130088849 | SOLID-STATE LAMPS WITH IMPROVED RADIAL EMISSION AND THERMAL PERFORMANCE - A solid-state lamp comprises: one or more solid-state light emitting devices (typically LEDs); a thermally conductive body; at least one duct; and a photoluminescence wavelength conversion component remote to the one or more LEDs. The lamp is configured such that the duct extends through the photoluminescence wavelength conversion component and defines a pathway for thermal airflow through the thermally conductive body to thereby provide cooling of the body and the one or more LEDs. | 04-11-2013 |
20130093311 | METHOD AND SYSTEM FOR MANUFACTURING PHOTO-LUMINESCENT WAVELENGTH CONVERSION COMPONENT - An approach is described for manufacturing wavelength conversion components for lighting devices which employ in-line process controls to minimize the amount of perceptible variation in the amount of photo-luminescent material that is deposited in the wavelength conversion components. Weight measurements are utilized in the manufacturing process to control and minimize the amount of the variations. In this approach, the weight of the product during manufacturing is used as a surrogate to a measure of the amount of photo-luminescent material in the component, and hence a surrogate for the expected color properties of the manufactured product. By measuring and checking for weight variations for the component, one can quickly determine with reasonable confidence whether there are any variations in the amount of photo-luminescent in the component. | 04-18-2013 |
20130093362 | METHODS AND APPARATUS FOR IMPLEMENTING TUNABLE LIGHT EMITTING DEVICE WITH REMOTE WAVELENGTH CONVERSION - A tunable light emitting device includes a plurality of solid-state light sources, a dimmer switch configured to generate a range of output powers for the light emitting device, a control circuit configured to translate an output power generated by the dimmer switch into an on/off arrangement of the plurality of light sources, and a wavelength conversion component comprising two or more regions with different photo-luminescent materials located remotely to the plurality of solid-state light sources and operable to convert at least a portion of the light generated by the plurality of solid-state light sources to light of a different wavelength, wherein the emission product of the device comprises combined light generated by the plurality of light sources and the two or more regions of the wavelength conversion component. | 04-18-2013 |
20130094176 | WAVELENGTH CONVERSION COMPONENT WITH IMPROVED PROTECTIVE CHARACTERISTICS FOR REMOTE WAVELENGTH CONVERSION - A wavelength conversion component for remote wavelength conversion is described in which a wavelength conversion layer is sandwiched between two light transmissive hermetic substrates. The light transmissive hermetic substrates form a barrier that protects the wavelength conversion layer from exposure to external environmental conditions. In some approaches, the wavelength conversion component further includes a sealant material disposed around an outer edge of the sandwich structure, where the sealant material hermetically seals an outer edge wavelength conversion layer. | 04-18-2013 |
20130094177 | WAVELENGTH CONVERSION COMPONENT WITH IMPROVED THERMAL CONDUCTIVE CHARACTERISTICS FOR REMOTE WAVELENGTH CONVERSION - A wavelength conversion component for a light emitting device comprising at least one light emitting solid-state light source includes a wavelength conversion layer comprising photo-luminescent material and a light transmissive thermally conductive substrate in thermal contact with a surface of the wavelength conversion layer. | 04-18-2013 |
20130094178 | WAVELENGTH CONVERSION COMPONENT HAVING PHOTO-LUMINESCENCE MATERIAL EMBEDDED INTO A HERMETIC MATERIAL FOR REMOTE WAVELENGTH CONVERSION - Disclosed are improved wavelength conversion components having photo-luminescent materials embedded into a hermetic material. Phosphor materials are embedded into a layer of glass, which is then utilized in a remote phosphor LED lighting apparatus. Methods for manufacturing these advanced wavelength conversion components are also described. | 04-18-2013 |
20130094179 | SOLID-STATE LIGHT EMITTING DEVICES WITH MULTIPLE REMOTE WAVELENGTH CONVERSION COMPONENTS - A light emitting device comprises a solid-state light source; a first wavelength conversion component comprising a first photo-luminescent material and a second wavelength conversion component comprising a second photo-luminescent material. At least the second wavelength conversion component is remote to the solid state light source and the first wavelength conversion component is closer in proximity to the solid-state light source and smaller in area than the second wavelength conversion component. | 04-18-2013 |
20130176723 | SOLID-STATE LAMPS WITH IMPROVED RADIAL EMISSION AND THERMAL PERFORMANCE - A solid-state lamp is described that includes a first light emission zone and a second light emission zone, where the first light emission zone is longitudinally spaced apart from the second light emission zone. The light emission zones comprise a photoluminescence wavelength conversion component and a solid state light emitting device. The lamp comprises a lower body, a central body, and an upper duct, where the central body, and the upper duct together define at least one passageway/duct for thermal airflow. | 07-11-2013 |
20130176724 | SOLID-STATE LAMPS WITH IMPROVED RADIAL EMISSION AND THERMAL PERFORMANCE - A solid-state lamp is described that includes a wavelength conversion component located at one end of the lamp. The solid-state lamp comprises: one or more solid-state light emitting devices (typically LEDs); a thermally conductive body; at least one duct; and a photoluminescence wavelength conversion component remote to the one or more LEDs, located at one end of the lamp. The lamp is configured such that the duct extends through the photoluminescence wavelength conversion component and defines a pathway for thermal airflow through the thermally conductive body to thereby provide cooling of the body and the one or more LEDs. | 07-11-2013 |
20130214676 | SOLID-STATE LAMPS WITH IMPROVED EMISSION EFFICIENCY AND PHOTOLUMINESCENCE WAVELENGTH CONVERSION COMPONENTS THEREFOR - A solid-state lamp comprising: an array of solid-state excitation sources and a photoluminescence wavelength conversion component comprising a layer of photoluminescence material and a coupling optic. The layer of photoluminescence material is remote to the excitation sources and the coupling optic is disposed between the excitation sources and the layer of photoluminescence material. The ratio of the photoluminescence material surface area of the layer of the photoluminescence material to the excitation source surface area for the array of solid-state excitation sources is at least 3 to 1. | 08-22-2013 |
20130286632 | METHODS AND APPARATUS FOR IMPLEMENTING COLOR CONSISTENCY IN REMOTE WAVELENGTH CONVERSION - Disclosed is an approach to implement a light emitting device with remote wavelength conversion. Lighting arrangements are disclosed which provides consistent color despite inconsistent light path lengths for phosphor light conversions. | 10-31-2013 |
20130293098 | SOLID-STATE LINEAR LIGHTING ARRANGEMENTS INCLUDING LIGHT EMITTING PHOSPHOR - A solid-state linear lamp comprises a co-extruded component, the co-extruded component comprising an elongate lens and a layer of photoluminescent material. The elongate lens is for shaping light emitted from the lamp and comprises an elongate interior cavity. The layer of a photoluminescent material is located on an interior wall of the elongate interior cavity. The lamp further comprises an array of solid-state light emitters configured to emit light into the elongate interior cavity. | 11-07-2013 |
20140014983 | LED-BASED LARGE AREA DISPLAY - An improved approach is described to implement an LED-based large area display which uses an array of single color solid state lighting elements (e.g. LEDs). In some embodiments, the panel comprises an array of blue LEDs, where each pixel of the array comprises three blue LEDs. An overlay is placed over the array of blue LEDs, where the overlay comprises a printed array of phosphor portions. Each pixel on the PCB comprised of three blue LEDs is matched to a corresponding portion of the overlay having the printed phosphor portions. The printed phosphor portions of the overlay includes a number of regions of blue light excitable phosphor materials that are configured to convert, by a process of photoluminescence, blue excitation light generated by the light sources into green or red and colored light. Regions of the overlay associated with generating blue light comprise an aperture/window that allows blue light to pass through the overlay. | 01-16-2014 |
20140103373 | SOLID-STATE LIGHT EMITTING DEVICES WITH PHOTOLUMINESCENCE WAVELENGTH CONVERSION - A solid-state light emitting device comprises a light transmissive thermally conductive circuit board; an array of solid-state light emitters (LEDs) mounted on, and electrically connected to, at least one face of the circuit board; and a photoluminescence wavelength conversion component. The wavelength conversion component comprises a mixture of particles of at least one photoluminescence material (phosphor) and particles of a light reflective material. The emission product of the device comprises the combined light generated by the LEDs and the photoluminescence material. The wavelength conversion component can comprise a layer of the phosphor material and particles of a light reflective material applied directly to the array of LEDs in the form of an encapsulant. Alternatively the photoluminescence component is a separate component and remote to the array of LEDs such as tubular component that surrounds the LEDs. | 04-17-2014 |
20140117253 | PHOTOLUMINESCENT DAYLIGHT PANEL - A photoluminescent daylight panel for converting higher energy shorter wavelength daylight to lower energy longer wavelength light comprises: a light transmissive substrate; at least one photoluminescent material configured to absorb at least a portion of daylight radiation of wavelengths between about 350 nm and about 450 nm and convert it to light with a wavelength greater than about 600 nm. | 05-01-2014 |
20140198480 | DIFFUSER COMPONENT HAVING SCATTERING PARTICLES - A diffuser component for a solid-state (LED) light emitting device comprises a light scattering material, wherein the light scattering material has an average particle size that is selected such that the light scattering material will scatter excitation light from a solid-state excitation source relatively more than the light scattering material will scatter light generated by at least one photoluminescence material (phosphor) in a wavelength conversion component. The diffuser component is separately manufactured from the wavelength conversion component. | 07-17-2014 |
20140211467 | SOLID-STATE LAMPS WITH OMNIDIRECTIONAL EMISSION PATTERNS - An inventive LED-based lamp, lamp cover component, and methods for manufacturing thereof are disclosed which provides a light diffusive lamp cover having a diffusivity (transmittance) that is different for different areas (zones or regions) of the cover. The diffusivity and location of those areas are configured so that the emission pattern of the whole lamp meets desired emissions characteristics and optical efficiency levels. The diffusive cover may have any number of specifically delineated diffusivity areas. Alternatively, the cover may provide a gradient of increasing/decreasing diffusivity portions over the cover. | 07-31-2014 |
20140217427 | SOLID-STATE LIGHT EMITTING DEVICES AND SIGNAGE WITH PHOTOLUMINESCENCE WAVELENGTH CONVERSION - A solid-state light emitting device comprises a solid-state light emitter (LED) operable to generate excitation light and a wavelength conversion component including a mixture of particles of a photoluminescence material and particles of a light reflective material. In operation the phosphor absorbs at least a portion of the excitation light and emits light of a different color. The emission product of the device comprises the combined light generated by the LED and the phosphor. The wavelength conversion component can be light transmissive and comprise a light transmissive substrate on which the mixture of phosphor and reflective materials is provided as a layer or homogeneously distributed throughout the volume of the substrate. Alternatively the wavelength conversion component can be light reflective with the mixture of phosphor and light reflective materials being provided as a layer on the light reflective surface. A wavelength conversion component, light emitting sign and light emitting signage surface are also disclosed. | 08-07-2014 |
20140218892 | WIDE EMISSION ANGLE LED PACKAGE WITH REMOTE PHOSPHOR COMPONENT - An improved approach is provided for implementing LED lighting systems and lamps that address the issues identified above. A new type of LED package is disclosed that reduces manufacturing and production costs, while simultaneously allowing for improved thermal management and wide angle light distribution. A self-contained LED package is disclosed that can be mounted as an entire unit onto a lamp platform. The LED package permits the dimensional configuration of the package components to be aligned with desired emission angles. For example, overhangs between phosphor components and circuit boards in the package can be avoided, thereby ensuring that the final lighting system will provide any desired emission angles. | 08-07-2014 |
20140218940 | WAVELENGTH CONVERSION COMPONENT WITH A DIFFUSING LAYER - A light emitting device comprises at least one solid-state light source (LED) operable to generate excitation light and a wavelength conversion component located remotely to the at least one source and operable to convert at least a portion of the excitation light to light of a different wavelength. The wavelength conversion component comprises a light transmissive substrate having a wavelength conversion layer comprising particles of at least one photoluminescence material and a light diffusing layer comprising particles of a light diffractive material. This approach of using the light diffusing layer in combination with the wavelength conversion layer solves the problem of variations or non-uniformities in the color of emitted light with emission angle. In addition, the color appearance of the lighting apparatus in its OFF state can be improved by implementing the light diffusing layer in combination with the wavelength conversion layer. Moreover, significant reductions can be achieved in the amount phosphor materials required to implement phosphor-based LED devices. | 08-07-2014 |
20140264420 | PHOTOLUMINESCENCE WAVELENGTH CONVERSION COMPONENTS - A photoluminescence wavelength conversion component comprises a first portion having at least one photoluminescence material; and a second portion comprising light reflective material, wherein the first portion is integrated with the second portion to form the photoluminescence wavelength conversion component. | 09-18-2014 |
20140306599 | SOLID-STATE LINEAR LIGHTING ARRANGEMENTS INCLUDING LIGHT EMITTING PHOSPHOR - A solid-state linear lamp comprises a co-extruded component, the co-extruded component comprising a photoluminescent portion and a support body, where the photoluminescent portion is integrally formed with the support body. The co-extruded component is formed to comprise an interior cavity for receiving insertion of a substrate having one or more light emitters. The array of solid-state light emitters is configured to emit light into the elongate interior cavity. | 10-16-2014 |
20150077971 | COLOR TUNABLE LIGHT EMITTING DEVICE - A color/color temperature tunable light emitting device comprises: an excitation source (LED) operable to generate light of a first wavelength range and a wavelength converting component comprising a phosphor material which is operable to convert at least a part of the light into light of a second wavelength range. Light emitted by the device comprises the combined light of the first and second wavelength ranges. The wavelength converting component has a wavelength converting property (phosphor material concentration per unit area) that varies spatially. The color of light generated by the source is tunable by relative movement of the wavelength converting component and excitation source such that the light of the first wavelength range is incident on a different part of the wavelength converting component and the generated light comprises different relative proportions of light of the first and second wavelength ranges. | 03-19-2015 |
20150085466 | LOW PROFILE LED-BASED LIGHTING ARRANGEMENTS - Disclosed are LED-based lighting arrangements that include an integrated lighting component that includes both a photoluminescence wavelength conversion portion and a diffusing portion. The integrated lighting component can be used to implement low-profile lighting arrangements having very small installation space requirements. | 03-26-2015 |
Patent application number | Description | Published |
20120301152 | OPTICAL TRANSCEIVER IMPLEMENTED WITH TUNABLE LD - An optical transceiver implemented with a tunable LD is disclosed. The tunable LD is installed within a TOSA (Transmitter Optical Subassembly). The optical transceiver provides two circuit boards arranged in the up-and-down relation. The TOSA is primarily connected to the second board but signals to drive the tunable LD are carried on an FPC board directly connected to the first board that mounts a driver circuit for the tunable LD. | 11-29-2012 |
20120301156 | OPTICAL TRANSMITTER SUBASSEMBLY - An optical transmitter subassembly of one embodiment includes a temperature controller, first to third bases, a laser diode, and an optical system. The temperature controller includes first and second plates, and temperature controlling elements put between the first and second plates. The first base has first and second regions, and is supported by the first plate. The second base is mounted on the first region. The third base is mounted on the second region. The laser diode is a tunable laser diode integrated with a Mach-Zehnder type optical modulator, and is mounted on the second base. The optical system is capable of fixing a wavelength of the laser diode and is mounted on the third base. Only a portion of the first base is mounted on the first plate. The portion of the first base includes the first region. | 11-29-2012 |
20130094527 | WAVELENGTH MONITOR, WAVELENGTH LOCKABLE LASER DIODE AND METHOD FOR LOCKING EMISSION WAVELENGTH OF LASER DIODE - A wavelength monitor monolithically integrated with a tunable LD is disclosed. The wavelength monitor includes at least two filters, each having a periodic transmission spectrum but a period between nearest neighbor periods is different from the other. A transmittance of the first filter and another transmittance of the second filter at a grid wavelength attributed to the WDM system forms a combination which is specific to the grid wavelength bur different from other combinations at other grid wavelengths. | 04-18-2013 |
20130148676 | WAVELENGTH MONITOR, WAVELENGTH LOCKABLE LASER DIODE AND METHOD FOR LOCKING EMISSION WAVELENGTH OF LASER DIODE - A wavelength monitor monolithically integrated with a tunable LD is disclosed. The wavelength monitor includes at least two filters, each having a periodic transmission spectrum but a period between nearest neighbor periods is different from the other. A transmittance of the first filter and another transmittance of the second filter at a grid wavelength attributed to the WDM system forms a combination which is specific to the grid wavelength but different from other combinations at other grid wavelengths. | 06-13-2013 |
20130148977 | OPTICAL TRANSCEIVER HAVING AN EXTRA AREA IN CIRCUIT BOARD FOR MOUNTING ELECTRONIC CIRCUITS - An optical transceiver of one embodiment includes a transmitter optical subassembly to transmit an optical signal, a receiver optical subassembly to receive an optical signal, a mother board, a daughter board, and a housing. The mother board mounts electronic circuits that electrically communicate with the optical transmitter optical subassembly and the receiver optical subassembly. The daughter board mounts other electronic circuits that electrically communicate with the optical transmitter optical subassembly and the receiver optical subassembly. The daughter board has an extra area mounting a portion of the other electronic circuits. The housing defines a space for installing the optical transmitter optical subassembly, the receiver optical subassembly, the mother board, and the daughter board. The extra area is disposed outside the space. | 06-13-2013 |
20130235891 | WAVELENGTH MONITOR, WAVELENGTH LOCKABLE LASER DIODE AND METHOD FOR LOCKING EMISSION WAVELENGTH OF LASER DIODE - A wavelength monitor monolithically integrated with a tunable LD is disclosed. The wavelength monitor includes at least two filters, each having a periodic transmission sptectrum but a period between nearest neighbor periods is different from the other. A transmittance of the first filter and another transmittance of the second filter at a grid wavelength attributed to the WDM system forms a combination which is specific to the grid wavelength bur different from other combinations at other grid wavelengths. | 09-12-2013 |
Patent application number | Description | Published |
20120145342 | Absorbent Sheet of Cellulosic Fibers - An absorbent sheet of cellulosic fibers includes a mixture of hardwood fibers and softwood fibers arranged in a reticulum having (i) a plurality of pileated fiber enriched regions of a relatively high local basis weight each extending a distance in the cross-machine direction (CD) of the sheet and interconnected by way of (ii) a plurality of lower local basis weight linking regions that each extend a distance in the machine direction (MD) of the sheet and whose fiber orientation is biased along the direction between pileated regions interconnected thereby. The relative basis weight, degree of pileation, hardwood to softwood ratio, fiber length distribution, fiber orientation, and geometry of the reticulum are controlled such that the sheet exhibits a percent CD stretch that is at least about 2.75 times the machine direction to cross-machine direction (MD/CD) dry tensile ratio of the sheet. | 06-14-2012 |
20120145343 | Method Of Making A Fabric-Creped Absorbent Cellulosic Sheet - A method of making a fabric-creped absorbent cellulosic sheet includes forming a nascent web from a papermaking furnish, the nascent web having a generally random distribution of papermaking fiber, transferring the nascent web having the generally random distribution of papermaking fiber to a translating transfer surface that is moving at a transfer surface speed, drying the web, to a consistency of from about 30 to about 60 percent, including compactively dewatering the web prior to or concurrently with transfer of the web to the transfer surface, fabric-creping the web from the transfer surface at a consistency of from about 30 to about 60 percent utilizing a creping fabric with a patterned creping surface, the fabric-creping step occurring under pressure in a fabric creping nip defined between the transfer surface and the creping fabric, the web being creped from the transfer surface and redistributed on the creping fabric. | 06-14-2012 |
20120145344 | Method Of Making A Fabric-Creped Absorbent Cellulosic Sheet - A method of making a fabric-creped absorbent cellulosic sheet includes compactively dewatering a papermaking furnish to form a nascent web having an apparently random distribution of papermaking fiber, applying the nascent web having the apparently random fiber distribution to a translating transfer surface that is moving at a transfer surface speed, and fabric-creping the web from the transfer surface at a consistency of from about 30 to about 60 percent utilizing a patterned creping fabric, the fabric-creping step occurring under pressure in a fabric creping nip defined between the transfer surface and the creping fabric, the web being creped from the transfer surface and wherein the creping fabric is adapted to contact the transfer surface and applies pressure to the web against the transfer surface such that the fibers of the web are redistributed on the creping fabric to form a web with a drawable reticulum. | 06-14-2012 |
20120152475 | Method Of Making A Belt-Creped Absorbent Cellulosic Sheet - A method of making a belt-creped absorbent cellulosic sheet includes compactively dewatering a papermaking furnish to form a nascent web having an apparently random distribution of papermaking fiber, applying the nascent web having the apparently random fiber distribution to a translating transfer surface that is moving at a transfer surface speed, belt-creping the web from the transfer surface at a consistency of from about 30 to about 60 percent utilizing a patterned creping belt, the belt-creping step occurring under pressure of at least 20 pounds per linear inch in a belt creping nip defined between the transfer surface and the creping belt. The belt is traveling at a belt speed that is slower than the speed of the transfer surface. The web is creped from the transfer surface and redistributed on the creping belt. | 06-21-2012 |
20120160435 | Method Of Making A Fabric-Creped Absorbent Cellulosic Sheet With Improved Dispensing Characteristics - A method of making a fabric-creped absorbent cellulosic sheet with improved dispensing characteristics. The method includes compactively dewatering a papermaking furnish to form a nascent web, applying the nascent web to a translating transfer surface, fabric-creping the web from the transfer surface at a consistency of from about 30 to about 60 percent utilizing a patterned creping fabric, the fabric-creping step occurring under pressure in a fabric creping nip defined between the transfer surface and the creping fabric, wherein the fabric is traveling at a fabric speed that is slower than the speed of the transfer surface, the web being creped from the transfer surface and transferred to the creping fabric, adhering the web to a drying cylinder with a resinous adhesive coating composition, drying the web on the drying cylinder to form a dried web, and peeling the dried web from the drying cylinder. | 06-28-2012 |
20120164407 | Multi-Ply Absorbent Sheet Of Cellulosic Fibers - A multi-ply absorbent sheet of cellulosic fiber includes continuous outer surfaces, and an absorbent core between the outer surfaces. The absorbent core includes a non-woven fiber network comprising a plurality of pileated fiber enriched regions of a relatively high local basis weight interconnected by way of a plurality of lower local basis weight linking regions whose fiber orientation is biased along the direction between pileated fiber enriched regions, interconnected thereby, and a plurality of fiber-deprived cellules between the fiber enriched regions and the linking regions, also being characterized by a local basis weight lower than that of the fiber enriched regions. | 06-28-2012 |
20120180967 | Method Of Making A Belt-Creped Absorbent Cellulosic Sheet - A method of making a belt-creped absorbent cellulosic sheet includes compactively dewatering a papermaking furnish to form a nascent web having an apparently random distribution of papermaking fiber orientation, applying the nascent web having the apparently random distribution of fiber orientation to a translating transfer surface that is moving at a transfer surface speed, belt-creping the web from the transfer surface at a consistency of from about 30% to about 60% utilizing a patterned creping belt, the belt-creping step occurring under pressure in a belt creping nip defined between the transfer surface and the creping belt, the web being creped from the transfer surface and redistributed on the creping belt to form a web with a reticulum having a plurality of interconnected regions of different local basis weights. | 07-19-2012 |
20120199300 | Fabric-Creped Absorbent Cellulosic Sheet Having A Variable Local Basis Weight - An absorbent cellulosic sheet having a variable local basis weight includes a patterned papermaking-fiber reticulum provided with (a) a plurality of generally machine direction (MD) oriented elongated densified regions of compressed paper-making fibers having a relatively low local basis weight as well as leading and trailing edges, the densified regions being arranged in a repeating pattern of a plurality of generally parallel linear arrays that are longitudinally staggered with respect to each other such that a plurality of intervening linear arrays are disposed between a pair of cross machine (CD) direction aligned densified regions, and (b) a plurality of fiber-enriched, pileated regions having a relatively high local basis weight interspersed between and connected with the densified regions, the pileated regions having crests extending generally in the cross-machine direction of the sheet. | 08-09-2012 |
20150068695 | MULTI-PLY ABSORBENT SHEET OF CELLULOSIC FIBERS - An absorbent cellulosic sheet having a variable local basis weight. The sheet includes a papermaking-fiber reticulum having a plurality of fiber-enriched pileated regions of a relatively high local basis weight each extending a distance in a cross-machine direction (CD) of the sheet, and a plurality of elongated densified regions that interconnect the plurality of fiber-enriched pileated regions. The elongated densified regions (i) have a relatively low local basis weight, and each extending a distance in a machine direction (MD) of the sheet, and (ii) are arranged in a repeating pattern having leading and trailing edges, such that the elongated densified regions are longitudinally staggered with respect to each other. | 03-12-2015 |