Dubourdieu
Catherine Dubourdieu, Grenoble FR
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20100059834 | INTEGRATED ELECTRONIC CIRCUIT INCLUDING A THIN FILM PORTION BASED ON HAFNIUM OXIDE - An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very low leakage current. It is particularly suitable for forming a part of a gate insulation layer of a MOS transistor or a part of a MIM capacitor dielectric. | 03-11-2010 |
20110049512 | METHOD FOR DEVELOPING THIN FILM FROM OXIDE OR SILICATE OF HAFNIUM NITRIDE, COORDINATION COMPOUND USED IN SAID METHOD, AND METHOD FOR PRODUCING INTEGRATED ELECTRONIC CIRCUIT - The invention provides a method for developing a thin film from oxide or silicate of hafnium nitride, and also provides asymmetric guanidinate coordinate compounds. The invention furthermore provides a method for producing an electronic circuit that includes a step for developing a thin film from oxide or silicate of hafnium nitride through the method of the invention. The method for developing a thin film from hafnium nitride oxide or hafnium nitride silicate according to the invention involves generating the gas phase by heating at least one coordinate compound from the following formula (I): Hf(NR | 03-03-2011 |
Catherine A. Dubourdieu, New York City, NY US
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20120286340 | CONTROLLING FERROELECTRICITY IN DIELECTRIC FILMS BY PROCESS INDUCED UNIAXIAL STRAIN - A method of controlling ferroelectric characteristics of integrated circuit device components includes forming a ferroelectrically controllable dielectric layer over a substrate; and forming a stress exerting structure proximate the ferroelectrically controllable dielectric layer such that a substantially uniaxial strain is induced in the ferroelectrically controllable dielectric layer by the stress exerting structure; wherein the ferroelectrically controllable dielectric layer comprises one or more of: a ferroelectric oxide layer and a normally non-ferroelectric material layer that does not exhibit ferroelectric properties in the absence of an applied stress. | 11-15-2012 |
Catherine A. Dubourdieu, Grenoble FR
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20150357429 | SEMICONDUCTOR DEVICES CONTAINING AN EPITAXIAL PEROVSKITE/DOPED STRONTIUM TITANATE STRUCTURE - Semiconductor devices are provided such as, ferroelectric transistors and floating gate transistors, that include an epitaxial perovskite/doped strontium titanate structure formed above a surface of a semiconductor substrate. The epitaxial perovskite/doped strontium titanate structure includes a stack of, in any order, a doped strontium titanate and a perovskite type oxide. | 12-10-2015 |
20160133753 | SEMICONDUCTOR DEVICES CONTAINING AN EPITAXIAL PEROVSKITE/DOPED STRONTIUM TITANATE STRUCTURE - Semiconductor devices are provided such as, ferroelectric transistors and floating gate transistors, that include an epitaxial perovskite/doped strontium titanate structure formed above a surface of a semiconductor substrate. The epitaxial perovskite/doped strontium titanate structure includes a stack of, in any order, a doped strontium titanate and a perovskite type oxide. | 05-12-2016 |
Catherine A. Dubourdieu, New York, NY US
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20110241091 | CONTROLLING FERROELECTRICITY IN DIELECTRIC FILMS BY PROCESS INDUCED UNIAXIAL STRAIN - A method of controlling ferroelectric characteristics of integrated circuit device components includes forming a ferroelectrically controllable dielectric layer over a substrate; and forming a stress exerting structure proximate the ferroelectrically controllable dielectric layer such that a substantially uniaxial strain is induced in the ferroelectrically controllable dielectric layer by the stress exerting structure; wherein the ferroelectrically controllable dielectric layer comprises one or more of: a ferroelectric oxide layer and a normally non-ferroelectric material layer that does not exhibit ferroelectric properties in the absence of an applied stress. | 10-06-2011 |
20120147666 | PHASE CHANGE MATERIAL CELL WITH STRESS INDUCER LINER - An example embodiment disclosed is a phase change memory cell. The memory cell includes a phase change material and a transducer positioned proximate the phase change material. The phase change material is switchable between at least an amorphous state and a crystalline state. The transducer is configured to activate when the phase change material is changed from the amorphous state to the crystalline state. In a particular embodiment, the transducer is ferroelectric material. | 06-14-2012 |
20120292677 | FERROELECTRIC SEMICONDUCTOR TRANSISTOR DEVICES HAVING GATE MODULATED CONDUCTIVE LAYER - Ferroelectric semiconductor switching devices are provided, including field effect transistor (FET) devices having gate stack structures formed with a ferroelectric layer disposed between a gate contact and a thin conductive layer (“quantum conductive layer”) . The gate contact and ferroelectric layer serve to modulate an effective work function of the thin conductive layer. The thin conductive layer with the modulated work function is coupled to a semiconductor channel layer to modulate current flow through the semiconductor and achieve a steep sub-threshold slope. | 11-22-2012 |
20130309782 | PHASE CHANGE MATERIAL CELL WITH PIEZOELECTRIC OR FERROELECTRIC STRESS INDUCER LINER - An example embodiment disclosed is a process for fabricating a phase change memory cell. The method includes forming a bottom electrode, creating a pore in an insulating layer above the bottom electrode, depositing piezoelectric material in the pore, depositing phase change material in the pore proximate the piezoelectric material, and forming a top electrode over the phase change material. Depositing the piezoelectric material in the pore may include conforming the piezoelectric material to at least one wall defining the pore such that the piezoelectric material is deposited between the phase change material and the wall. The conformal deposition may be achieved by chemical vapor deposition (CVD) or by atomic layer deposition (ALD). | 11-21-2013 |
Catherine Anne Dubourdieu, New York, NY US
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20120086059 | ENGINEERING MULTIPLE THRESHOLD VOLTAGES IN AN INTEGRATED CIRCUIT - An integrated circuit and method for forming an integrated circuit. There are at least three field-effect transistors with at least two of the field-effect transistors having the same electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. It is optional for the third field-effect transistor to have an electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. The at least three field-effect transistors are strained to varying amounts so that each of the three field-effect transistors has a threshold voltage, Vt, which is different from the Vt of the two other field-effect transistors. | 04-12-2012 |
Catherine Anne Dubourdieu, Lyon FR
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20150214323 | ENGINEERING MULTIPLE THRESHOLD VOLTAGES IN AN INTEGRATED CIRCUIT - An integrated circuit and method for forming an integrated circuit. There are at least three field-effect transistors with at least two of the field-effect transistors having the same electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. It is optional for the third field-effect transistor to have an electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. The at least three field-effect transistors are strained to varying amounts so that each of the three field-effect transistors has a threshold voltage, Vt, which is different from the Vt of the two other field-effect transistors. | 07-30-2015 |
Daniel Dubourdieu, Limerick, ME US
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20160128932 | DENTAL HARD CHEW SUPPLEMENTS CONTAINING ANTIMICROBIAL ACTIVES - A hard chew matrix containing antimicrobial actives, such as nanosilver, curcumin and propolis for use in dogs and other animals is disclosed. | 05-12-2016 |
Daniel J. Dubourdieu US
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20120178816 | CARBAMIDE PEROXIDE TREATMENTS FOR THE REPRODUCTIVE TRACT - Disclosed are methods of maintaining fertility or treating retained placenta, reproductive tract infection, or reproductive tract inflammation in an animal by administering carbamide peroxide to the reproductive tract of the animal. The carbamide peroxide administration removes placental remains on the uterine wall, protects against or treats reproductive tract infection, and protects against or treats reproductive tract inflammation such as metritis, and thereby maintains fertility in the animal. | 07-12-2012 |
Daniel J. Dubourdieu, Limerick, ME US
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20110159002 | STABILIZED LIQUID EGG MATERIAL FOR EXTENDED SHELF LIFE - The present invention is directed to shelf-stable liquid egg material, methods for making the same, and method of using the same. The present invention is also directed to an animal feed supplement containing a stabilized IgY antibody titer in liquid eggs stored at room temperature for extended periods of time with the use of glycerol and preservatives. The stabilized liquid whole egg or stabilized liquid yolks of the egg containing non-specific or elevated specific IgY titer may be used as animal feed supplements animals to provide passive immunity to these animals. The stabilized nature of the IgY and liquid egg allows for extended shelf life of these liquid products at room temperature. | 06-30-2011 |
20130171204 | SOFT FOOD COMPOSITION WITH PROBIOTICS AND PREBIOTICS FOR MASKING MEDICATIONS - A soft extruded food composition containing probiotics, enzymes, and vitamins for wrapping medications, such as pills or tablets, for animal consumption. The flavor of the wrapped solid medication is masked by the food composition and thus becomes more palatable to the animal while providing additional health benefits in the form of probiotics, prebiotics, enzymes, and vitamins. | 07-04-2013 |
20130330354 | STABILIZED LIQUID EGG MATERIAL FOR EXTENDED SHELF LIFE - The present invention is directed to shelf-stable liquid egg material, methods for making the same, and method of using the same. The present invention is also directed to an animal feed supplement containing a stabilized IgY antibody titer in liquid eggs stored at room temperature for extended periods of time with the use of glycerol and preservatives. The stabilized liquid whole egg or stabilized liquid yolks of the egg containing non-specific or elevated specific IgY titer may be used as animal feed supplements animals to provide passive immunity to these animals. The stabilized nature of the IgY and liquid egg allows for extended shelf life of these liquid products at room temperature. | 12-12-2013 |
Denis Dubourdieu, Beguey FR
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20100166930 | PROCESS FOR EXTRACTING CARBONYLATED COMPOUNDS FROM A DRINK BY LIQUID-SOLID EXTRACTION WITH A FUNCTIONALIZED INERT SUPPORT - The present invention relates to a process for extracting carbonylated compounds from a drink by liquid-solid extraction with a functionalized inert support containing nitrogenous nucleophilic functional groups. Advantageously, according to the present invention, the drink is wine or fruit juice. The process according to the present invention is advantageously applied to the reduction of the sulphur dioxide combination capacity of a drink such as wine. | 07-01-2010 |