Patent application number | Description | Published |
20080199123 | ULTRAFAST GE/SI RESONATOR-BASED MODULATORS FOR OPTICAL DATA COMMUNICATIONS IN SILICON PHOTONICS - An optical modulator structure includes at least two waveguide structures for inputting and outputting an optical signal. At least one ring resonator structure provides coupling between the at least two waveguide structures. The at least one ring resonator structure includes Ge or SiGe. | 08-21-2008 |
20090101909 | SEMICONDUCTOR PHOTODETECTORS - In one aspect, a method includes forming a pit in a top surface of a substrate by removing a portion of the substrate and growing a semiconductor material with a bottom surface on the pit, the semiconductor material different than the material of the substrate. The pit has a base recessed in the top surface of the substrate. In another aspect, a structure includes a substrate having a top surface, the substrate including at least one pit having a base lower than the top surface of the substrate, and a semiconductor material having a bottom surface formed on the base of the pit. | 04-23-2009 |
20120193522 | Monolithic Optical Coupling Module Based On Total Internal Reflection Surfaces - In one aspect, an optical device comprises a monolithic optical module which includes a first total internal reflection (TIR) surface, a second TIR surface adjacent the first TIR surface, and a first optical port aligned with the first internal optical beam dividing interface. An interface between the first TIR surface and the second TIR surface forms a first internal optical beam dividing interface. An exterior surface of the first TIR surface and an exterior surface of the second TIR surface form a generally V-shaped notch on the monolithic optical module. A first optical beam entering the monolithic optical module through the first optical port and incident on the first internal optical beam dividing interface is partially reflected by the first TIR surface to travel in a first direction as a second optical beam and partially reflected by the second TIR surface to travel in a second direction as a third optical beam. The second direction is generally opposite to the first direction. | 08-02-2012 |
20120261559 | Monolithic Optical Coupling Module Based On Total Internal Reflection Surfaces - A low-cost monolithic optical module for splitting one or more input optical beams to two or more output optical beams is provided. The one or more input optical beams are reflected by two or more total internal reflection (TIR) surfaces of the monolithic optical module. A light splitting ratio between the two or more output optical beams is predetermined by one or more physical features of the two or more TIR surfaces. | 10-18-2012 |
20120287942 | Signal Converter of Consumer Electronics Connection Protocols - Methods and devices of converting signals of consumer electronics connection protocols to high speed bi-directional signals are presented. A novel packing method packs all the data, clocks, and control signals into one or more packets of a predefined format. A novel unpacking method unpacks the packets to original data, clocks, and control signals. | 11-15-2012 |
20120326259 | Avalanche Photodiode with Special Lateral Doping Concentration - Avalanche photodiodes having special lateral doping concentration that reduces dark current without causing any loss of optical signals and method for the fabrication thereof are described. In one aspect, an avalanche photodiode comprises: a substrate, a first contact layer coupled to at least one metal contract of a first electrical polarity, an absorption layer, a doped electric control layer having a central region and a circumferential region surrounding the central region, a multiplication layer having a partially doped central region, and a second contract layer coupled to at least one metal contract of a second electrical polarity. Doping concentration in the central section is lower than that of the circumferential region. The absorption layer can be formed by selective epitaxial growth. | 12-27-2012 |
20130287407 | Hybrid Multichannel or WDM Integrated Transceiver - Various embodiments of a hybrid multichannel or WDM integrated transceiver are presented. In one aspect, a transceiver includes a transmitter portion and a receiver portion. The transmitter portion includes an optical waveguide structure that includes multiple channels of optical waveguide modulators on a substrate. The receiver portion includes at least one surface light illuminated photodetector. | 10-31-2013 |
20130292741 | High Performance GeSi Avalanche Photodiode Operating Beyond Ge Bandgap Limits - Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge)-containing absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge-containing absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge-containing absorption layer; a first silicon dioxide (SiO | 11-07-2013 |
20130294766 | Dark Current Cancellation For Optical Power Monitoring In Optical Transceivers - Various embodiments of a method and device for dark current cancellation for optical power monitoring in optical transceivers are presented. In one aspect, a device includes a photosensitive module and a processing module coupled to the photosensitive module. The photosensitive module is configured to detect an optical signal and generate a first signal responsive to detecting the optical signal. The processing module is configured to determine a value of a second signal that is related to noise and determine a value of a third signal that is related to a difference between a value of the first signal and the value of the second signal. | 11-07-2013 |
20140133508 | Novel Photonic Device Structure And Fabrication Method Thereof - Various embodiments of a photonic device and fabrication method thereof are provided. In one aspect, a device includes a substrate, a current confinement layer disposed on the substrate, an absorption layer disposed in the current confinement layer, and an electrical contact layer disposed on the absorption layer. The current confinement layer is doped in a pattern and configured to reduce dark current in the device. The photonic device may be a photodiode or a laser. | 05-15-2014 |
20140186991 | AVALANCHE PHOTODIODE WITH SPECIAL LATERAL DOPING CONCENTRATION - Avalanche photodiodes having special lateral doping concentration that reduces dark current without causing any loss of optical signals and method for the fabrication thereof are described. In one aspect, an avalanche photodiode comprises: a substrate, a first contact layer coupled to at least one metal contract of a first electrical polarity, an absorption layer, a doped electric control layer having a central region and a circumferential region surrounding the central region, a multiplication layer having a partially doped central region, and a second contract layer coupled to at least one metal contract of a second electrical polarity. Doping concentration in the central section of the electric control layer is lower than that of the circumferential region. The absorption layer can be formed by selective epitaxial growth. | 07-03-2014 |
20140239301 | High Performance Surface Illuminating GeSi Photodiodes - A GeSi avalanche photodiode (APD includes an anti-reflection structure, a Ge absorption region, and a resonance cavity enhanced (RCE) reflector. The anti-reflection structure includes one or more dielectric layers and a top contact layer which is heavily doped with dopants of a first polarity. The RCE reflector includes: an intrinsic or lightly doped Si multiplication layer, a Si contact layer which is heavily doped with dopants of a second polarity opposite the first polarity, a Si cavity length compensation layer, a buried oxide (BOX) layer, and a Si substrate. | 08-28-2014 |
20140241658 | Electro-Optic Silicon Modulator With Longitudinally Nonuniform Modulation - A device, such as a silicon modulator, in accordance with the present disclosure employs PN diodes without sacrificing the modulation depth, while achieving lower loss and better impedance matching to 50-Ohm drivers. In one embodiment, the device includes an input waveguide, an input optical splitter coupled to the input waveguide, first and second optical phase shifters coupled to the input optical splitter, an output optical splitter coupled to the first and second phase shifters, and an output waveguide coupled to the output optical splitter. The phase shifters are designed with variant capacitance per unit length. | 08-28-2014 |
20140291682 | High Performance GeSi Avalanche Photodiode Operating Beyond Ge Bandgap Limits - Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge) absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge absorption layer; a first silicon dioxide (SiO | 10-02-2014 |
20150028386 | Ge-Si P-I-N Photodiode With Reduced Dark Current And Fabrication Method Thereof - Various embodiments of a germanium-on-silicon (Ge—Si) photodiode are provided along with the fabrication method thereof. In one aspect, a Ge—Si photodiode includes a doped bottom region at the bottom of a germanium layer, formed by thermal diffusion of donors implanted into a silicon layer. The Ge—Si photodiode further includes a doped sidewall region of Ge mesa formed by ion implantation. Thus, the electric field is distributed in the intrinsic region of the Ge—Si photodiode where there is low dislocation density. The doped bottom region and sidewall region of the Ge layer prevent electric field from penetrating into the Ge—Si interface and Ge mesa sidewall region, where a large amount of dislocations are distributed. This design significantly suppresses dark current. | 01-29-2015 |
20150028443 | A Ge-Si Avalanche Photodiode With Silicon Buffer Layer And Edge Electric Field Buffer Region - Various embodiments of a germanium-on-silicon (Ge—Si) avalanche photodiode are provided. In one aspect, the Ge—Si avalanche photodiode utilizes a silicon buffer layer to reduce the energy of holes drifting into absorption layer where the absorption material has lower ionization threshold, thereby suppressing multiplication noise and increasing the gain-bandwidth product of the avalanche photodiode. In another aspect, the Ge—Si avalanche photodiode utilizes an edge electric field buffer layer region to reduce the electric field along the sidewall of multiplication layer, where high electric field is applied for avalanche, thereby reducing probability of sidewall breakdown and enhancing reliability of the avalanche photodiode. | 01-29-2015 |
20150043866 | Electro-Optic Silicon Modulator With Capacitive Loading In Both Slots Of Coplanar Waveguides - Embodiments of the present disclosure provide a high-speed silicon modulator without the microwave mode conversion and provide 50-ohm impedance matching to drivers simultaneously. In one aspect, a device may include an input waveguide region, an optic splitter, two optic phase shifters, an optic splitter, and an output waveguide. The device may include two curved waveguides. Either or both of the curved waveguides may have specially doped regions including PN junctions or MOS capacitors. The PN junctions or MOS capacitors may be alternatively connected to both slots of a coplanar waveguide forming the electrodes. | 02-12-2015 |