Patent application number | Description | Published |
20140117379 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes sequentially forming an n− type epitaxial layer, a p type epitaxial layer, and a first n+ region on a first surface of an n+ type silicon carbide substrate, and forming a trench through the first n+ region and the p type epitaxial layer, wherein the forming of the trench includes forming a photosensitive layer pattern on the first n+ region, etching the first n+ region and the p type epitaxial layer by using the photosensitive layer pattern as a mask, forming a buffer layer by using amorphous carbon on the first n+ region after the photosensitive layer pattern is removed, forming a buffer layer pattern by etching the buffer layer, etching using the buffer layer pattern as the mask, isotropically etching to form a second portion of the trench, and removing the buffer layer pattern. | 05-01-2014 |
20140167071 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a plurality of n type pillar regions and an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a p type epitaxial layer and an n+ region disposed on the plurality of n type pillar regions and the n− type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the plurality of n type pillar regions and the n− type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p type epitaxial layer, the n+ region, and the oxide film; and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein each corner portion of the trench is in contact with a corresponding n type pillar region. | 06-19-2014 |
20140167072 | SCHOTTKY BARRIER DIODE AND METHOD OF MANUFACTURING THE SAME - A schottky barrier diode includes an n− type epitaxial layer disposed at a first surface of an n+ type silicon carbide substrate, a plurality of n type pillar areas disposed in the n− type epitaxial layer at a first portion of a first surface of the n+ type silicon carbide substrate, a plurality of p+ areas disposed at a surface of the n− type epitaxial layer and separated from the n type pillar area, a schottky electrode disposed on the n− type epitaxial layer and the p+ area, and an ohmic electrode disposed at a second surface of the n+ type silicon carbide substrate. A doping density of the n type pillar area is larger than a doping density of the n− type epitaxial layer. | 06-19-2014 |
20140170824 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes: sequentially forming an n− type epitaxial layer, a p type epitaxial layer, and a first n+ region on a first surface of an n+ type silicon carbide substrate; forming a trench by penetrating the first n+ region and the p type epitaxial layer, and etching part of the n− type epitaxial layer; forming a buffer layer in the trench and on the first n+ region; etching the buffer layer to form a buffer layer pattern on both sidewalls defined by the trench; forming a first silicon film on the first n+ region, the buffer layer pattern, and a surface of the n− type epitaxial layer exposed by the trench; oxidizing the first silicon film to form a first silicon oxide film; removing the buffer layer pattern by an ashing process to form a first silicon oxide film pattern; forming a second silicon film on the first silicon oxide film pattern and in the trench; oxidizing the second silicon film to form a second silicon oxide film; and etching the second silicon oxide film to form a gate insulating film within the trench, wherein the first silicon oxide film pattern is positioned on the first n+ region and at the bottom of the trench on the surface of the n− type epitaxial layer. | 06-19-2014 |
20140183554 | SCHOTTKY BARRIER DIODE AND METHOD OF MANUFACTURING THE SAME - A Schottky barrier diode includes: an n+ type silicon carbide substrate; an n− type epitaxial layer disposed on a first surface of the n+ type silicon carbide substrate and includes an electrode area and a terminal area positioned outside of the electrode area; a first trench and a second trench disposed on the n− type epitaxial layer in the terminal area; a p area disposed under the first trench and the second trench; a Schottky electrode disposed on the n− type epitaxial layer in the electrode area; and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein the first trench and the second trench are adjacently positioned to form a step. | 07-03-2014 |
20140183556 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - The present inventive concept has been made in an effort to increase the width of a channel in a silicon carbide MOSFET using a trench gate. | 07-03-2014 |
20140183558 | SCHOTTKY BARRIER DIODE AND METHOD OF MANUFACTURING THE SAME - A schottky barrier diode includes: an n− type epitaxial layer that is disposed at a first surface of an n+ type silicon carbide substrate; a plurality of n type pillar areas that are disposed at the inside of the n− type epitaxial layer and that are disposed at a first portion of the first surface of the n+ type silicon carbide substrate; a p type area that is disposed at the inside of the n− type epitaxial layer and that is extended in a direction perpendicular to the n type pillar areas; a plurality of p+ areas in which the n− type epitaxial layer is disposed at a surface thereof and that are separated from the n type pillar areas and the p type area; a schottky electrode that is disposed on the n− type epitaxial layer and the p+ areas; and an ohmic electrode that is disposed at a second surface of the n+ type silicon carbide substrate. | 07-03-2014 |
20140183559 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - The present inventive concept has been made in an effort to improve the breakdown voltage of a silicon carbide MOSFET using a trench gate. | 07-03-2014 |
20140183560 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes an n+ type silicon carbide substrate; a plurality of n type pillar regions, a plurality of p type pillar regions, and an n− type epitaxial layer disposed on a first surface of the n+ type silicon carbide substrate; a p type epitaxial layer and an n+ region sequentially disposed on the n− type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the n− type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p type epitaxial layer, the n+ region, and the oxide film; and a drain electrode positioned on a second surface of the n+ type silicon carbide substrate. | 07-03-2014 |