Patent application number | Description | Published |
20090223551 | Process for making solar cells - The invention describes a process and apparatus for making a photovoltaic device in a continuous roll to roll process. The fabrication apparatus in accordance with the present invention is quite novel and non-obvious and provides capital efficiency and advantages in processing for thin film solar cells. | 09-10-2009 |
20090235986 | Back contact for thin film solar cells - The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. | 09-24-2009 |
20090242029 | Junctions in substrate solar cells - The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the absorber layer and the window layer to create improved junctions. | 10-01-2009 |
20090246906 | High-Throughput Printing of Semiconductor Precursor Layer From Microflake Particles - Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices. | 10-01-2009 |
20090301543 | Thin film solar cells with monolithic integration and backside contact - The present invention discloses novel thin film photovoltaic devices with monolithic integration and backside metal contacts and methods of making the devices. | 12-10-2009 |
20090305449 | Methods and Devices For Processing A Precursor Layer In a Group VIA Environment - Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in a VIA environment. | 12-10-2009 |
20100089453 | High-Throughput Printing of Semiconductor Precursor Layer From Microflake Particles - Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices. | 04-15-2010 |
20100229931 | Back contact for thin film solar cells - Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a M | 09-16-2010 |
20100267222 | High-Throughput Printing of Semiconductor Precursor Layer from Nanoflake Particles - Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. | 10-21-2010 |
20110059231 | METHODS AND DEVICES FOR PROCESSING A PRECURSOR LAYER IN A GROUP VIA ENVIRONMENT - Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in a VIA environment. | 03-10-2011 |
20110061737 | Back Contact in Thin Film Solar Cells - The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. | 03-17-2011 |
20110065224 | METHODS AND DEVICES FOR PROCESSING A PRECURSOR LAYER IN A GROUP VIA ENVIRONMENT - Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in a VIA environment. | 03-17-2011 |
20130210191 | High-Throughput Printing of Semiconductor Precursor Layer by Use of Chalcogen-Rich Chalcogenides - A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-rich chalcogenides is disclosed. The method comprises forming a precursor material comprising group IB-chalcogenide and/or group IIIA-chalcogenide particles, wherein an overall amount of chalcogen in the particles relative to an overall amount of chalcogen in a group IB-IIIA-chalcogenide film created from the precursor material, is at a ratio that provides an excess amount of chalcogen in the precursor material. The excess amount of chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form the group IB-IIIA-chalcogenide film at a desired stoichiometric ratio, wherein the excess amount of chalcogen in the precursor material is an amount greater than or equal to a stoichiometric amount found in the IB-IIIA-chalcogenide film. | 08-15-2013 |