Patent application number | Description | Published |
20090215260 | METHODS OF FORMING A BARRIER LAYER IN AN INTERCONNECT STRUCTURE - Methods of forming a barrier layer for an interconnection structure are provided. In one embodiment, a method for forming an interconnect structure includes providing a substrate having a first conductive layer disposed thereon, incorporating oxygen into an upper portion of the first conductive layer, depositing a first barrier layer on the first conductive layer, and diffusing the oxygen incorporated into the upper portion of the first conductive layer into a lower portion of the first barrier layer. In another embodiment, a method for forming an interconnection structure includes providing a substrate having a first conductive layer disposed thereon, treating an upper surface of the first conductive layer with an oxygen containing gas, depositing a first barrier layer on the treated conductive layer, and depositing a second conductive layer on the first barrier layer while driving a portion of oxygen atoms from the treated conductive layer into the first barrier layer. | 08-27-2009 |
20120181167 | Electrochromic Tungsten Oxide Film Deposition - A deposition method for electrochromic WO | 07-19-2012 |
20120318664 | Pinhole-Free Dielectric Thin Film Fabrication - A method of depositing a dielectric thin film may include: depositing a thin layer of dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric; and repeating the depositing, stopping and inducing and maintaining steps until a desired thickness of dielectric is deposited. A variation on this method may include, in place of the repeating step: depositing a thick layer of lower quality dielectric; depositing a thin layer of high quality dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; and inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric. The thick layer of dielectric may be deposited more rapidly than the thin layers. | 12-20-2012 |
20120321815 | Thin Film Battery Fabrication With Mask-Less Electrolyte Deposition - A method of fabricating a thin film battery may include a blanket deposition of an electrolyte layer followed by selective laser patterning of the electrolyte layer. Some or all of the other device layers may be in situ patterned layers—formed using shadow masks. | 12-20-2012 |
20130248352 | Multiple Frequency Sputtering for Enhancement in Deposition Rate and Growth Kinetics of Dielectric Materials - A method of sputter depositing dielectric thin films may comprise: providing a substrate on a substrate pedestal in a process chamber, the substrate being positioned facing a sputter target; simultaneously applying a first RF frequency from a first power supply and a second RF frequency from a second power supply to the sputter target; and forming a plasma in the process chamber between the substrate and the sputter target, for sputtering the target; wherein the first RF frequency is less than the second RF frequency, the first RF frequency is chosen to control the ion energy of the plasma and the second RF frequency is chosen to control the ion density of the plasma. The self-bias of surfaces within said process chamber may be selected; this is enabled by connecting a blocking capacitor between the substrate pedestal and ground. | 09-26-2013 |
20130266741 | Microwave Rapid Thermal Processing of Electrochemical Devices - Microwave radiation may be applied to electrochemical devices for rapid thermal processing (RTP) (including annealing, crystallizing, densifying, forming, etc.) of individual layers of the electrochemical devices, as well as device stacks, including bulk and thin film batteries and thin film electrochromic devices. A method of manufacturing an electrochemical device may comprise: depositing a layer of the electrochemical device over a substrate; and microwave annealing the layer, wherein the microwave annealing includes selecting annealing conditions with preferential microwave energy absorption in the layer. An apparatus for forming an electrochemical device may comprise: a first system to deposit an electrochemical device layer over a substrate; and a second system to microwave anneal the layer, wherein the second system is configured to provide preferential microwave energy absorption in the device layer. | 10-10-2013 |
20130280581 | PINHOLE-FREE SOLID STATE ELECTROLYTES WITH HIGH IONIC CONDUCTIVITY - The present invention relates to vacuum-deposited solid state electrolyte layers with high ionic conductivity in electrochemical devices, and methods and tools for fabricating said electrolyte layers. An electrochemical device may comprise solid state electrolytes with incorporated thin layers and/or particles of transition metal oxides, silicon, silicon oxide, or other suitable materials that will induce an increase in ionic conductivity of the electrolyte stack (for example, materials with which lithium is able to intercalate), or mixtures thereof. An improvement in ionic conductivity of the solid state electrolyte is expected which is proportional to the number of incorporated layers or a function of the distribution uniformity and density of the particles within the electrolyte. Embodiments of the present invention are applicable to solid state electrolytes in a broad range of electrochemical devices including thin film batteries, electrochromic devices and ultracapacitors. The solid state electrolyte layers may be nominally | 10-24-2013 |
20140030449 | ELECTROCHEMICAL DEVICE FABRICATION PROCESS WITH LOW TEMPERATURE ANNEAL - A method of manufacturing an electrochemical device may comprise: depositing an electrode layer over a substrate using a physical vapor deposition (PVD) process in a deposition chamber, wherein the chamber pressure is greater than about 10 mTorr, and the substrate temperature is between about room temperature and about 450° C. or higher; and annealing the electrode layer for crystallizing the electrode layer, wherein the annealing temperature is less than or equal to about 450° C. Furthermore, the chamber pressure may be as high as 100 mTorr. Yet furthermore, the post-deposition annealing temperature may be less than or equal to 400° C. The electrochemical device may be a thin film battery with a LiCoO | 01-30-2014 |
20150056744 | THIN FILM STRUCTURES AND DEVICES WITH INTEGRATED LIGHT AND HEAT BLOCKING LAYERS FOR LASER PATTERNING - Selective removal of specified layers of thin film structures and devices, such as solar cells, electrochromics, and thin film batteries, by laser direct patterning is achieved by including heat and light blocking layers in the device/structure stack immediately adjacent to the specified layers which are to be removed by laser ablation. The light blocking layer is a layer of metal that absorbs or reflects a portion of the laser energy penetrating through the dielectric/semiconductor layers and the heat blocking layer is a conductive layer with thermal diffusivity low enough to reduce heat flow into underlying metal layer(s), such that the temperature of the underlying metal layer(s) does not reach the melting temperature, T | 02-26-2015 |
20150079481 | SOLID STATE ELECTROLYTE AND BARRIER ON LITHIUM METAL AND ITS METHODS - A method of fabricating an electrochemical device comprising a lithium metal electrode, may comprise: providing a substrate with a lithium metal electrode on the surface thereof; depositing a first layer of dielectric material on the lithium metal electrode, the depositing the first layer being sputtering Li | 03-19-2015 |