Patent application number | Description | Published |
20100316870 | MANUFACTURING METHOD FOR DISPLAY DEVICE AND DISPLAY DEVICE - A method for manufacturing a display device includes a first step of preparing a first substrate which has a first area to be etched and a second area located at a periphery of the first area and which has a display element on its surface, a second step of etching and removing the first area of the first substrate, a third step of forming a second substrate on a surface of the first substrate that is opposite to the surface on which the display element is located, and a fourth step of removing the second area of the first substrate. | 12-16-2010 |
20110043720 | METHOD FOR MANUFACTURING DISPLAY DEVICE AND DISPLAY DEVICE - A method for manufacturing a display device includes; a first step of preparing a plastic substrate placed on a support substrate, a second step of bonding a first region of an expanded silicone sheet to an end of the plastic substrate, and bonding a second region of the silicone sheet to the support substrate having the plastic substrate placed thereon, thereby fixing the plastic substrate to the support substrate by a biasing force of the silicone sheet, and a third step of laminating a plurality of thin films over the plastic substrate fixed to the support substrate. | 02-24-2011 |
20120091452 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units. | 04-19-2012 |
20120108018 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE - A method for manufacturing a thin film transistor substrate includes a step of forming a gate electrode ( | 05-03-2012 |
20120199891 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: a gate electrode ( | 08-09-2012 |
20120218485 | ACTIVE MATRIX SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL INCLUDING THE SAME, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE - An active matrix substrate includes a plurality of pixels arranged in a matrix, a plurality of capacitor lines ( | 08-30-2012 |
20120223308 | THIN-FILM TRANSISTOR, PROCESS FOR PRODUCTION OF SAME, AND DISPLAY DEVICE EQUIPPED WITH SAME - The present invention provides a thin-film transistor capable of high-speed operation, a process for producing the same, and a display device including the same. The thin-film transistor of the present invention includes, on a substrate, in the order of: a gate electrode; a gate insulating film; an oxide semiconductor film; and a protective insulating film, the protective insulating film having a planar shape that is completely or substantially the same as the planar shape of the gate electrode. | 09-06-2012 |
20120241750 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device includes: a thin film transistor having a gate line ( | 09-27-2012 |
20120326144 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME - A method includes: a step of forming a gate electrode ( | 12-27-2012 |
20130023086 | ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL PROVIDED WITH SAME, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE - An active matrix substrate includes a plurality of pixel electrodes (P) provided in a matrix, and a plurality of TFTs ( | 01-24-2013 |
20130026462 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR MANUFACTURED BY THE SAME, AND ACTIVE MATRIX SUBSTRATE - A method for manufacturing a thin film transistor includes the step of forming a gate electrode ( | 01-31-2013 |
20130056741 | DISPLAY PANEL AND THIN FILM TRANSISTOR SUBSTRATE - A display panel ( | 03-07-2013 |
20130092923 | ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - An active matrix substrate includes a plurality of pixel electrodes ( | 04-18-2013 |
20130099227 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Al, In, Zn, and O as constituent atoms. | 04-25-2013 |
20130105788 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE | 05-02-2013 |
20130112970 | THIN FILM TRANSISTOR SUBSTRATE AND FABRICATION METHOD FOR THE SAME - A TFT substrate ( | 05-09-2013 |
20130134411 | SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE - A semiconductor device ( | 05-30-2013 |
20130140552 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE - A semiconductor device ( | 06-06-2013 |
20130193430 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01≦Zn/(In+Zn)≦0.22. | 08-01-2013 |
20130207114 | ACTIVE MATRIX SUBSTRATE AND DISPLAY PANEL - An active matrix substrate ( | 08-15-2013 |
20140014952 | ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL, AND DISPLAY DEVICE - A drain electrode ( | 01-16-2014 |
20140021037 | THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD - A thin film forming apparatus includes a substrate holding portion and a target portion. The target portion has a plurality of targets arranged at predetermined intervals and parallel to a substrate held by the substrate holding portion. The substrate holding portion is configured to move the substrate parallel to the target portion. A shield portion configured to block sputtered particles flying from the target portion is placed on the target portion side of the substrate so as to face a gap between adjoining ones of the targets. | 01-23-2014 |
20140147966 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - The semiconductor device ( | 05-29-2014 |
20140151682 | CIRCUIT BOARD, DISPLAY DEVICE, AND PROCESS FOR PRODUCTION OF CIRCUIT BOARD - The present invention provides a circuit board having excellent productivity, particularly a circuit board having excellent productivity with respect to a semiconductor layer and source layer forming step, a display device, and a process for producing a circuit board. The circuit board of the present invention is a circuit board including an oxide semiconductor layer and an electrode connected to the oxide semiconductor layer, wherein the electrode is formed by essentially laminating a layer made of a metal other than copper and a layer containing copper. | 06-05-2014 |
20140367683 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units. | 12-18-2014 |