Patent application number | Description | Published |
20130064973 | Chamber Conditioning Method - A system and method for conditioning a chamber is disclosed. An embodiment comprises utilizing the deposition chamber to deposit a first layer and conditioning the deposition chamber. The conditioning the deposition chamber can be performed by depositing a heterogeneous material over the first layer. The heterogeneous material can cover and encapsulate the first layer, thereby preventing particles of the first layer from breaking off and potentially landing on a substrate during a subsequent processing run. | 03-14-2013 |
20130089934 | Material Delivery System and Method - A system and method for controlling saturated vapor pressure of a precursor material is provided. An embodiment comprises generating a calibration curve and utilizing the calibration curve to control a temperature of the precursor material in order to control its saturated vapor pressure. Alternatively, the calibration curve may be substituted for a real time sensor which can take readings in real time and adjust the temperature and saturated vapor pressure based upon the real time readings. | 04-11-2013 |
20140061822 | SUBSTRATE BACKSIDE PEELING CONTROL - Structures and methods for reducing backside polysilicon peeling are disclosed. A structure includes a substrate having a first side and a second opposite side, a first dielectric layer on the second side of the substrate extending in a direction from an edge of the substrate towards a center of the substrate, a high-k layer on the first dielectric layer, and a polysilicon layer on the high-k layer. The first dielectric layer has a first innermost sidewall relative to the center of the substrate, and the high-k layer has a second innermost sidewall relative to the center of the substrate. The second innermost sidewall is within 2 millimeters from the first innermost sidewall in a direction parallel to the second side. The polysilicon layer extends towards the center of the substrate further than the first innermost sidewall. | 03-06-2014 |
20140162425 | METHOD OF FORMING DIELECTRIC FILMS USING A PLURALITY OF OXIDATION GASES - A method for forming a dielectric film is disclosed. The method includes (a) exposing a substrate to a first gas pulse having a first oxygen-containing gas in a chamber; (b) exposing the substrate to multiple consecutive second gas pulses having a second oxygen-containing gas in the chamber, wherein the first oxygen-containing gas is different from the second oxygen-containing gas; and (c) sequentially after (a) and (b), exposing the substrate to a third gas pulse having a metal-containing gas in the chamber. Steps (a), (b), and (c) may be repeated any number of times to form the dielectric film with a predetermined thickness. | 06-12-2014 |
20140231931 | IN-SITU NITRIDATION OF GATE DIELECTRIC FOR SEMICONDUCTOR DEVICES - A semiconductor substructure with improved performance and a method of forming the same is described. The semiconductor substructure includes a dielectric film over a substrate, the dielectric film including at least one metal dielectric layer, at least one oxygen-donor layer, and at least one nitride-incorporation layer. | 08-21-2014 |
20150102431 | MECHANISMS FOR FORMING GATE DIELECTRIC LAYER - Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a nitride buffer layer over the semiconductor substrate, and the nitride buffer layer is in an amorphous state. The semiconductor device also includes a crystalline gate dielectric layer over the nitride buffer layer and a gate electrode over the crystalline gate dielectric layer. | 04-16-2015 |
20150214321 | SEMICONDUCTOR DEVICE AND FORMATION THEREOF - A semiconductor device and methods of formation are provided. A semiconductor device includes a dielectric film over a dielectric layer. The dielectric film includes a crystalline structure having a substantially uniform composition of zirconium, nitrogen and oxygen. The dielectric film is formed through in situ nitrogen plasma doping of a zirconium layer. The dielectric film functions as a gate dielectric. The dielectric film has a high dielectric constant between about 28-29 and has a low leakage current density of about 4.79×10 | 07-30-2015 |
20160043186 | SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a gate stack positioned over the semiconductor substrate. The gate stack includes a gate dielectric layer and a gate electrode over the gate dielectric layer. The semiconductor device structure includes spacers positioned over first sidewalls of the gate stack. The spacers and the gate stack surround a recess. The semiconductor device structure includes an insulating layer formed over the semiconductor substrate and surrounding the gate stack. The semiconductor device structure includes a cap layer covering the insulating layer, the spacers, and inner walls of the recess. | 02-11-2016 |