Patent application number | Description | Published |
20140264710 | SEAL RING STRUCTURE WITH ROUNDED CORNERS FOR SEMICONDUCTOR DEVICES - Seal ring structures are provided with rounded corner junctions or corner junctions that include polygons. The seal rings surround generally rectangular semiconductor devices such as integrated circuits, image sensors and other devices. The seal ring includes a configuration of two sets of generally parallel opposed sides and the corner junctions are the junctions at which adjacent orthogonal seal ring sides are joined. The seal rings are trench structures or filled trench structures in various embodiments. The rounded corner junctions are formed by a curved arc or multiple line segments joined together at various angles. The corner junctions that include one or more enclosed polygons include polygons with at least one polygon side being formed by one of the seal ring sides. | 09-18-2014 |
20140319626 | Metal Gate Stack Having TiAlCN as Work Function Layer and/or Blocking/Wetting Layer - A metal gate stack having a titanium aluminum carbon nitride (TiAlCN) as a work function layer and/or a multi-function blocking/wetting layer, and methods of manufacturing the same, are disclosed. In an example, an integrated circuit device includes a semiconductor substrate and a gate stack disposed over the semiconductor substrate. The gate stack includes a gate dielectric layer disposed over the semiconductor substrate, a multi-function blocking/wetting layer disposed over the gate dielectric layer, wherein the multi-function blocking/wetting layer includes TiAlCN, a work function layer disposed over the multi-function blocking/wetting layer, and a conductive layer disposed over the work function layer. | 10-30-2014 |
20140367820 | Methods of Manufacturing and Using a Photodiode with Concave Reflector - A photodiode structure includes a photodiode and a concave reflector disposed below the photodiode. The concave reflector is arranged to reflect incident light from above back toward the photodiode. | 12-18-2014 |
20150041851 | CIS Image Sensors with Epitaxy Layers and Methods for Forming the Same - A method includes performing a first epitaxy to grow a first epitaxy layer of a first conductivity type, and performing a second epitaxy to grow a second epitaxy layer of a second conductivity type opposite the first conductivity type over the first epitaxy layer. The first and the second epitaxy layers form a diode. The method further includes forming a gate dielectric over the first epitaxy layer, forming a gate electrode over the gate dielectric, and implanting a top portion of the first epitaxy layer and the second epitaxy layer to form a source/drain region adjacent to the gate dielectric. | 02-12-2015 |
20150044810 | Backside Illumination Image Sensor Chips and Methods for Forming the Same - A die includes a first plurality of edges, and a semiconductor substrate in the die. The semiconductor substrate includes a first portion including a second plurality of edges misaligned with respective ones of the first plurality of edges. The semiconductor substrate further includes a second portion extending from one of the second plurality of edges to one of the first plurality of edges of the die. The second portion includes a first end connected to the one of the second plurality of edges, and a second end having an edge aligned to the one of the first plurality of edges of the die. | 02-12-2015 |
20150054029 | Metal Gate Stack Having TaAlCN Layer - An integrated circuit device includes a semiconductor substrate; and a gate stack disposed over the semiconductor substrate. The gate stack further includes a gate dielectric layer disposed over the semiconductor substrate; a multi-function blocking/wetting layer disposed over the gate dielectric layer, wherein the multi-function blocking/wetting layer comprises tantalum aluminum carbon nitride (TaAlCN); a work function layer disposed over the multi-function blocking/wetting layer; and a conductive layer disposed over the work function layer. | 02-26-2015 |
20150123225 | BACKSIDE ILLUMINATOR IMAGE SENSOR DEVICE WITH SHIELDING LAYER - A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate. | 05-07-2015 |
20150130001 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF - An image sensor is provided including a substrate, an array of photosensitive units, a grid and a plurality of color filters. In the image sensor, the grid has a first portion and a second portion disposed on the first portion. The second portion of the grid can cause reflection or refraction of incident lights targeted for one image sensor element back into the same image sensor element, so as to avoid crosstalk occurred. Further, a method for manufacturing the image sensor also provides herein. | 05-14-2015 |
20150130002 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF - An image sensor is provided including a substrate, an array of photosensitive units, a grid, a light-tight layer and a plurality of color filters. In the image sensor, the grid has a top surface, and the light-tight layer is disposed on the top surface of the grid. Due to the light-tight layer on the grid, an incident light entering into the grid can be blocked by the light-tight layer, so that the crosstalk effect is reduced significantly. Further, a method for manufacturing the image sensor also provides herein. | 05-14-2015 |
20150132919 | PHOTOMASK AND METHOD FOR FORMING DUAL STI STRUCTURE BY USING THE SAME - In a method for manufacturing a dual shallow trench isolation structure, a substrate is provided, and a mask layer is formed on the substrate. The mask layer is patterned by using a photomask to form at least one first hole and at least one second hole in the mask layer, in which a depth of the at least one first hole is different from a depth of the at least one second hole. The mask layer and the substrate are etched to form at least one first trench having a first depth and at least one second trench having a second depth, in which the first depth is different from the second depth. The remaining mask layer is removed. A first isolation layer and A second isolation layer are respectively formed in the at least one first trench and the at least one second trench. | 05-14-2015 |