Patent application number | Description | Published |
20100142816 | Device for Detecting Anomalies in a Digital Image - The aim of the inventive device is to facilitate the verification of conformity between an anticipated digital image, or reference image, and a digital image actually obtained. The inventive device implements a method that makes it possible to quickly and effectively distinguish the differences between a reference image and an obtained image. The inventive device comprises means that take as input the two images, reference and obtained, and produce as output a single image, resulting from the merging of the two input images in which the portions common to both images are represented in shades of grey, the differences between the first and the second image being represented in green or red depending on whether they belong to the first or the second image. | 06-10-2010 |
20100207869 | SECURE MAN-MACHINE INTERFACE FOR MANAGING GRAPHICAL OBJECTS ON A VIEWING SCREEN - The field of the invention is that of man-machine interface devices for viewing screen ( | 08-19-2010 |
20110106344 | Relative Speed Gauge Intended for the Monitoring of a Pilotless Aircraft - The device for checking speed intended for an aircraft ready to land on deck on a moving vehicle, the aircraft having a current vertical speed, called the first speed, and a threshold value of vertical downward speed relating to the vertical speed of the moving vehicle, called the “low threshold”, the ship having an absolute vertical speed, called the second speed, comprises a display and means for receiving data originating from the aircraft, notably its vertical absolute speed. The device includes a calculator making it possible to generate on the display a graduated speed gauge including a fixed cursor indicating the first vertical speed and a second moving cursor indicating the speed of the ship, a third moving cursor indicating the low threshold, the graduation being centred around the value of the first vertical speed. | 05-05-2011 |
20110118901 | Device for Securing a Flight Sequence of an Unmanned Aircraft - A device for assisting in the decking of an aircraft, the aircraft being remotely controlled from a mobile station, called a ship, includes means of receiving data originating from the aircraft, notably attitudes of the aircraft and its altitude, the aircraft being in stationary flight ready to deck, a first coordinate system being defined relative to the aircraft, a second coordinate system being defined relative to the ship. The device for assisting in the decking of an aircraft includes a display for generating the position of the aircraft in a coordinate system linked to the ship in a first vertical representation and in a second horizontal representation. | 05-19-2011 |
20110118910 | Decision Aid Device for Assisting the Landing of an Aircraft on the Deck of a Ship - A device for aiding the deck-landing of an aircraft, the aircraft being controlled remotely from a mobile station, such as a ship, includes means for receiving data from the aircraft, notably attitudes of the aircraft, the aircraft hovering ready to land on deck, the deck-landing decision having to be taken under certain conditions that must all be met, the device including a computer making it possible to deliver temporal indicators indicating that all the conditions are met. The device includes a temporal gauge including a temporal graduation indicating mobile graphical zones representing the periods during which all the conditions are met for authorizing a deck-landing. | 05-19-2011 |
Patent application number | Description | Published |
20090200454 | PIXEL CIRCUIT FOR GLOBAL ELECTRONIC SHUTTER - An image sensor formed of an array of pixels, each pixel including a photodiode coupled between a first reference voltage and a first switch, the first switch being operable to connect the photodiode to a first node; a capacitor arranged to store a charge accumulated by the photodiode, the capacitor being coupled between a second reference voltage and a second node; a second switch coupled between the first and second nodes, the second switch being operable to connect the capacitor to the first node; and read circuitry coupled for reading the voltage at the second node. | 08-13-2009 |
20100059803 | LIGHT REFLECTING CMOS IMAGE SENSOR - An image sensor comprising at least:
| 03-11-2010 |
20100102206 | NEAR INFRARED/COLOR IMAGE SENSOR - A near infrared/color photodetector made in a monolithic form in a lightly-doped substrate of a first conductivity type covering a holder and comprising a face on the side opposed to the holder. The photodetector includes at least first and second photodiodes for the storage of electric charges photogenerated in the substrate, the second photodiode being adjacent to said face; and a first region extending at least between the second photodiode and the holder, preventing the passage of said charges between a first substrate portion being located between said region and the holder and a second substrate portion extending between said face and the first region, the first photodiode being adapted to store at least charges photogenerated in the first substrate portion and the second photodiode being adapted to store charges photogenerated in the second substrate portion. | 04-29-2010 |
20110279725 | IMAGE SENSOR IN CMOS TECHNOLOGY WITH HIGH VIDEO CAPTURE RATE - An time-delay-integration image sensor comprises a matrix of photosensitive pixels organized in rows and columns, a first matrix of memory cells associated with control and adding means to store accumulated brightness levels of several rows of pixels in a row of memory cells. The first memory cell matrix is provided with the control and adding means to store in its rows accumulated brightness levels of the rows of a first half of the pixel matrix. The sensor comprises a second memory cell matrix associated with the control and adding means to store accumulated brightness levels of the rows of the second half of the pixel matrix in a row of the second memory cell matrix. Means are provided for adding the levels accumulated in a row of the first memory cell matrix to the levels accumulated in a corresponding row of the second memory cell matrix. | 11-17-2011 |
20110298956 | LINEAR IMAGE SENSOR IN CMOS TECHNOLOGY - A time-delay-integration image sensor comprises a matrix of pixels organized in rows and columns. Each pixel comprises a first photosensitive element, a storage node and a first transfer element connected between the first photosensitive element and the storage node, Each pixel further comprises a second photosensitive element, a second transfer element connected between the second photosensitive element and the storage node, and a third transfer element connected between the storage node and the second photosensitive element of an adjacent pixel of the column. A control circuit is configured to simultaneously command the first and second transfer elements to on state and the third transfer element to off state, and, in a distinct phase, to simultaneously command the first and third transfer elements to on state and the second transfer element to off state. | 12-08-2011 |
20120086010 | ELECTRONIC IMAGE DETECTION DEVICE - The instant disclosure relates to an electronic image detection device comprising: a plurality of metal electrodes on a first face of an insulating layer; and amorphous silicon regions extending over the insulating layer between the metal electrodes. | 04-12-2012 |
20120112247 | IMAGE SENSOR FOR IMAGING AT A VERY LOW LEVEL OF LIGHT - A basic device for an image sensor includes a photogeneration and charge-collecting region formed at the surface of a semiconductor substrate having a first type of conductivity, adapted to be biased at a reference voltage, the photogeneration region being associated with a device for the transfer, multiplication, and insulation of charges. The photogeneration region has an insulated gate mounted thereon, which is adapted to be alternately biased at a first voltage and at a second voltage, the insulated gate being made of a low-absorption material. | 05-10-2012 |
20120119264 | BUILT-IN VERY HIGH SENSITIVITY IMAGE SENSOR - A basic device for an image sensor includes a photodiode consisting of a doped area having a first type of conductivity and formed at the surface of a semiconductor substrate having a second type of conductivity, adapted to be biased at a first reference voltage, wherein the photodiode is combined with a device for the transfer, multiplication and insulation of charges, the photodiode being a fully depleted one and including, at the surface of the doped area having a first type of conductivity, a strongly doped region having the second type of conductivity and adapted to be biased at a second reference voltage. | 05-17-2012 |
20130009041 | PINNED PHOTODIODE CMOS IMAGE SENSOR WITH A LOW SUPPLY VOLTAGE - A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node. | 01-10-2013 |
20130048832 | CMOS IMAGING DEVICE WITH THREE-DIMENSIONAL ARCHITECTURE - An imaging device including: plural pixels each including a photodetector; plural reading circuits associated with the plural photodetectors, each reading circuit including a first MOS transistor charging/discharging a photodetector and a second MOS transistor converting charges to be output by the photodetector into voltage; an electronic processing circuit configured to process the voltages outputted by the reading circuits; a first substrate on which are formed the pixels and the reading circuits, and a second substrate, distinct from the first substrate, on which is formed the electronic processing circuit, the second substrate being linked electrically to the first substrate by an electrical interconnection forming an electrical link between the reading circuits and the electronic processing circuit. | 02-28-2013 |
20130214160 | VISIBLE AND NEAR-INFRARED RADIATION DETECTOR - The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers. | 08-22-2013 |
20130214161 | VISIBLE AND NEAR-INFRARED RADIATION DETECTOR - The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. | 08-22-2013 |
20130284889 | MONOLITHIC MULTISPECTRAL VISIBLE AND INFRARED IMAGER - The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode. | 10-31-2013 |
20130286266 | CMOS LINEAR IMAGE SENSOR WITH MOTION-BLUR COMPENSATION - Time delay and integration sensor comprising a matrix of photosensitive pixels organized in rows and columns. Each pixel of a column comprises a photosensitive element, a storage node, and a first transfer transistor connecting the photosensitive element to the storage node. Each pixel of a column, except for the last one, further comprises a second transfer transistor which connects the storage node of the pixel to the photosensitive element of the next pixel of the column. The two transfer transistors are connected to be active at the same time. With such a configuration, it is possible to define a sliding group of several consecutive pixels in a column, to expose the group of pixels, to aggregate the information of the pixels of the group, and to start again after shifting the group of pixels by one pixel. | 10-31-2013 |
20140183685 | IMAGE SENSOR - An image sensor arranged inside and on top of a semiconductor substrate, having a plurality of pixels, each including: a photosensitive area, a read area, and a storage area extending between the photosensitive area and the read area; at least one first insulated vertical electrode extending in the substrate between the photosensitive area and the storage area; and at least one second insulated vertical electrode extending in the substrate between the storage area and the read area. | 07-03-2014 |